AON6548 30V N-Channel AlphaMOS General Description Product Summary • Latest Trench Power AlphaMOS (αMOS LV) technology • Very Low RDS(ON) at 4.5V VGS • Low Gate Charge • High Current Capability • RoHS and Halogen-Free Compliant Application VDS 30V 85A ID (at VGS=10V) RDS(ON) (at VGS=10V) < 1.8mΩ RDS(ON) (at VGS=4.5V) < 2.5mΩ 100% UIS Tested 100% Rg Tested • DC/DC Converters in Computing, Servers, and POL • Isolated DC/DC Converters in Telecom and Industrial DFN5X6 Top View D Top View Bottom View 1 8 2 7 3 6 4 5 G PIN1 S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC=25°C Continuous Drain Current G Pulsed Drain Current C Avalanche Current C V A 340 52 IDSM TA=70°C ±20 66 IDM TA=25°C Continuous Drain Current Units V 85 ID TC=100°C Maximum 30 A 42 IAS 60 A Avalanche energy L=0.1mH C EAS 180 mJ VDS Spike VSPIKE 36 V Power Dissipation B 100ns TC=25°C PD TC=100°C TA=25°C Power Dissipation A Junction and Storage Temperature Range Rev.1.0: February 2013 7.4 Steady-State Steady-State RθJA RθJC W 4.7 TJ, TSTG Symbol t ≤ 10s W 33 PDSM TA=70°C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case 83 °C -55 to 150 Typ 14 40 1.1 www.aosmd.com Max 17 55 1.5 Units °C/W °C/W °C/W Page 1 of 6 AON6548 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=250µA, VGS=0V Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VDS=0V, VGS=±20V VGS(th) Gate Threshold Voltage VDS=VGS, ID=250µA RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=20A TJ=125°C VGS=4.5V, ID=20A gFS Forward Transconductance VSD Diode Forward Voltage IS=1A,VGS=0V IS Maximum Body-Diode Continuous Current G DYNAMIC PARAMETERS Ciss Input Capacitance Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance Qgs Gate Source Charge 1.8 ±100 nA 2.2 V 1.4 1.8 2 2.5 2 2.5 mΩ 1 V 85 A 125 0.65 VGS=0V, VDS=0V, f=1MHz VGS=10V, VDS=15V, ID=20A 0.4 mΩ S 4290 VGS=0V, VDS=15V, f=1MHz SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge µA 5 1.4 Units V 1 TJ=125°C VDS=5V, ID=20A Max 30 VDS=30V, VGS=0V IDSS Coss Typ pF 1680 pF 300 pF 0.8 1.2 Ω 65.2 90 nC 31.2 45 nC 12.6 nC Qgd Gate Drain Charge 14.6 nC tD(on) Turn-On DelayTime 11 ns tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time Qrr Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs VGS=10V, VDS=15V, RL=0.75Ω, RGEN=3Ω IF=20A, dI/dt=500A/µs 9.8 ns 38.8 ns 11.5 ns 23.5 ns nC 60 A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA t≤ 10s and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Single pulse width limited by junction temperature TJ(MAX)=150°C. D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating. G. The maximum current rating is package limited. H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev.1.0: February 2013 www.aosmd.com Page 2 of 6 AON6548 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 100 100 4.5V VDS=5V 3.5V 80 80 60 60 ID(A) ID (A) 10V 40 40 VGS=3V 20 125°C 25°C 20 0 0 0 1 2 3 4 0 5 4 2 3 4 5 6 Normalized On-Resistance 1.6 3 RDS(ON) (mΩ Ω) 1 VGS(Volts) Figure 2: Transfer Characteristics (Note E) VDS (Volts) Fig 1: On-Region Characteristics (Note E) VGS=4.5V 2 1 VGS=10V VGS=10V ID=20A 1.4 1.2 VGS=4.5V ID=20A 1 0.8 0 0 5 0 10 15 20 25 30 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature (Note E) 4 1.0E+02 ID=20A 1.0E+01 125°C 1.0E+00 125°C IS (A) RDS(ON) (mΩ Ω) 3 2 1.0E-01 1.0E-02 25°C 1.0E-03 1 25°C 1.0E-04 1.0E-05 0 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) Rev.1.0: February 2013 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) Page 3 of 6 AON6548 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 6000 VDS=15V ID=20A 5000 Capacitance (pF) VGS (Volts) 8 6 4 2 Ciss 4000 3000 Coss 2000 Crss 1000 0 0 0 10 20 30 40 50 60 Qg (nC) Figure 7: Gate-Charge Characteristics 70 0 10 15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics 30 500 1000.0 100.0 5 RDS(ON) limited 10µs 10µs TJ(Max)=150°C TC=25°C 400 1ms DC 10ms 1.0 TJ(Max)=150°C TC=25°C 0.1 Power (W) ID (Amps) 100µs 10.0 300 200 100 0.0 0 0.01 0.1 1 VDS (Volts) 10 100 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-to-Case (Note F) VGS> or equal to 4.5V Figure 9: Maximum Forward Biased Safe Operating Area (Note F) Zθ JC Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RθJC=1.5°C/W 1 PD 0.1 Single Pulse Ton T 0.01 1E-05 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev.1.0: February 2013 www.aosmd.com Page 4 of 6 AON6548 100 100 80 80 Current rating ID(A) Power Dissipation (W) TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 60 40 20 60 40 20 0 0 0 25 50 75 100 125 TCASE (° °C) Figure 12: Power De-rating (Note F) 150 0 25 50 75 100 125 TCASE (° °C) Figure 13: Current De-rating (Note F) 150 10000 TA=25°C Power (W) 1000 100 10 1 1E-05 0.001 0.1 10 1000 Pulse Width (s) Figure 14: Single Pulse Power Rating Junction-to-Ambient (Note H) Zθ JA Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RθJA=55°C/W 0.1 PD 0.01 Single Pulse Ton T 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 15: Normalized Maximum Transient Thermal Impedance (Note H) Rev.1.0: February 2013 www.aosmd.com Page 5 of 6 AON6548 Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds 90% + Vdd DUT Vgs VDC - Rg 10% Vgs Vgs t d(on) tr t d(off) t on tf toff Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2 E AR = 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vds Isd Vgs Ig Rev.1.0: February 2013 Vgs L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.aosmd.com Page 6 of 6