Datasheet

AON6978
30V Dual Asymmetric N-Channel AlphaMOS
General Description
Product Summary
• Latest Trench Power AlphaMOS (αMOS LV) technology
• Integrated Schottky Diode (SRFET) on Low-Side
• Very Low RDS(on) at 4.5V VGS
• Low Gate Charge
• High Current Capability
• RoHS and Halogen-Free Compliant
Application
VDS
Q1
30V
Q2
30V
36A
ID (at VGS=10V)
28A
RDS(ON) (at VGS=10V)
<5.7mΩ
<3.8mΩ
RDS(ON) (at VGS=4.5V)
<9.4mΩ
<4.9mΩ
100% UIS Tested
100% Rg Tested
• DC/DC Converters in Computing, Servers, and POL
• Isolated DC/DC Converters in Telecom and Industrial
Top View
DFN5X6B
Top View
Bottom View
Bottom View
PIN1
PIN1
Q2: SRFETTM
Soft Recovery MOSFET:
Integrated Schottky Diode
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Max Q1
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TC=25°C
Continuous Drain
Current G
ID
TC=100°C
Pulsed Drain Current C
TA=25°C
Continuous Drain
Current
Avalanche Current
IDM
Max Q2
Units
V
±20
±12
V
28
36
C
A
22
28
112
144
20
28
16
22
IDSM
TA=70°C
30
A
IAS
40
60
A
Avalanche Energy L=0.01mH C
EAS
8
18
mJ
VDS Spike
VSPIKE
V
100ns
TC=25°C
Power Dissipation B
Power Dissipation
PDSM
TA=70°C
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
Rev.1.0: June 2013
36
33
12
13
3.6
4.3
2.3
2.7
PD
TC=100°C
TA=25°C
A
36
31
TJ, TSTG
Symbol
t ≤ 10s
Steady-State
Steady-State
RθJA
RθJC
-55 to 150
Typ Q1
29
56
3.3
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Typ Q2
24
50
3
Max Q1
35
67
4
W
W
°C
Max Q2
29
60
3.8
Units
°C/W
°C/W
°C/W
Page 1 of 10
AON6978
Q1 Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
Drain-Source Breakdown Voltage
BVDSS
IDSS
Zero Gate Voltage Drain Current
Conditions
Min
ID=250µA, VGS=0V
Gate-Body leakage current
VDS=0V, VGS=±20V
Gate Threshold Voltage
VDS=VGS ID=250µA
RDS(ON)
Static Drain-Source On-Resistance
5
1.4
VGS=10V, ID=20A
TJ=125°C
VGS=4.5V, ID=20A
gFS
Forward Transconductance
VDS=5V, ID=20A
VSD
Diode Forward Voltage
IS=1A,VGS=0V
IS
Maximum Body-Diode Continuous Current G
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
VGS=0V, VDS=15V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
Qg(4.5V) Total Gate Charge
Qgs
Gate Source Charge
Qgd
VGS=10V, VDS=15V, ID=20A
0.7
Units
V
1
TJ=55°C
VGS(th)
Max
30
VDS=30V, VGS=0V
IGSS
Coss
Typ
1.8
±100
nA
2.2
V
4.7
5.7
6.3
7.6
7.5
9.4
62
0.7
µA
mΩ
mΩ
S
1
V
28
A
1010
pF
474
pF
50
pF
1.6
2.4
Ω
14.4
25
nC
6.8
15
nC
2.9
nC
Gate Drain Charge
2.5
nC
tD(on)
Turn-On DelayTime
4.8
ns
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
trr
Qrr
3.2
ns
21
ns
Turn-Off Fall Time
3.8
ns
IF=20A, dI/dt=500A/µs
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs
14
ns
nC
VGS=10V, VDS=15V, RL=0.75Ω,
RGEN=3Ω
24
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on RθJA t≤ 10s and the maximum allowed junction temperature of 150°C. The value in any given application
depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initial TJ =25°C.
D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is limited by package.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev.1.0: June 2013
www.aosmd.com
Page 2 of 10
AON6978
Q1-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
100
10V
VDS=5V
5V
4.5V
80
80
7V
4V
60
ID(A)
ID (A)
60
40
40
125°C
VGS=3.0V
20
20
25°C
0
0
0
1
2
3
4
0
5
10
2
3
4
5
6
Normalized On-Resistance
1.6
VGS=4.5V
8
RDS(ON) (mΩ
Ω)
1
VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
6
4
VGS=10V
2
VGS=10V
ID=20A
1.4
1.2
VGS=4.5V
ID=20A
1
0.8
0
0
5
0
10
15
20
25
30
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
25
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
(Note E)
15
1.0E+02
ID=20A
ID=11.5A
1.0E+01
1.0E+00
125°C
IS (A)
RDS(ON) (mΩ
Ω)
10
125°C
5
125°C
1.0E-01
1.0E-02
1.0E-03
25°C
25°C
1.0E-04
25°C
1.0E-05
0
2
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev.1.0: June 2013
4
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0.0
0.2
0.4
0.6
0.8
1.0
1.2
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
Page 3 of 10
AON6978
Q1-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
1400
VDS=15V
ID=20A
Ciss
1200
Capacitance (pF)
VGS (Volts)
8
6
4
1000
800
600
Coss
400
2
Crss
200
0
0
0
5
10
15
0
5
10
15
20
25
VDS (Volts)
Figure 8: Capacitance Characteristics
Qg (nC)
Figure 7: Gate-Charge Characteristics
200
1000.0
TJ(Max)=150°C
TC=25°C
160
100.0
10µs
RDS(ON)
limited
10.0
1.0
100us
DC
TJ(Max)=150°C
TC=25°C
0.1
1ms
100ms
Power (W)
ID (Amps)
30
120
80
40
0.0
0
0.01
0.1
1
VDS (Volts)
10
100
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toCase (Note F)
VGS> or equal to 4.5V
Figure 9: Maximum Forward Biased
Safe Operating Area (Note F)
Zθ JC Normalized Transient
Thermal Resistance
10
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
RθJC=4°C/W
1
0.1
PD
Ton
Single Pulse
T
0.01
1E-05
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev.1.0: June 2013
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Page 4 of 10
AON6978
Q1-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
40
Current rating ID(A)
Power Dissipation (W)
40
30
20
10
30
20
10
0
0
0
25
50
75
100
125
TCASE (°C)
Figure 12: Power De-rating (Note F)
150
0
25
50
75
100
125
150
TCASE (°C)
Figure 13: Current De-rating (Note F)
10000
TA=25°C
Power (W)
1000
100
10
1
1E-05
0.001
0.1
10
1000
Pulse Width (s)
Figure 14: Single Pulse Power Rating Junction-to-Ambient (Note H)
Zθ JA Normalized Transient
Thermal Resistance
10
1
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJA=67°C/W
0.1
PD
0.01
Ton
Single Pulse
T
0.001
1E-05
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 15: Normalized Maximum Transient Thermal Impedance (Note H)
Rev.1.0: June 2013
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Page 5 of 10
AON6978
Q2 Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
Drain-Source Breakdown Voltage
BVDSS
Conditions
Min
ID=10mA, VGS=0V
Zero Gate Voltage Drain Current
IGSS
Gate-Body leakage current
VDS=0V, VGS=±12V
VGS(th)
Gate Threshold Voltage
VDS=VGS ID=250µA
RDS(ON)
Static Drain-Source On-Resistance
100
1.2
VGS=10V, ID=20A
TJ=125°C
VGS=4.5V, ID=20A
gFS
Forward Transconductance
VSD
Diode Forward Voltage
IS=1A,VGS=0V
IS
Maximum Body-Diode Continuous Current G
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
VGS=0V, VDS=15V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
Qg(4.5V) Total Gate Charge
Qgs
Gate Source Charge
Qgd
tD(on)
VGS=10V, VDS=15V, ID=20A
0.3
Units
V
0.5
TJ=55°C
VDS=5V, ID=20A
Max
30
VDS=30V, VGS=0V
IDSS
Coss
Typ
1.6
mA
±100
nA
2
V
3.1
3.8
4.2
5.1
3.9
4.9
mΩ
0.65
V
36
A
160
0.52
mΩ
S
3276
pF
513
pF
57
pF
0.7
1.1
Ω
49
68
nC
20.6
30
nC
7.0
nC
Gate Drain Charge
4.6
nC
Turn-On DelayTime
8.0
ns
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
4.0
ns
36.0
ns
tf
Turn-Off Fall Time
3.0
ns
trr
Body Diode Reverse Recovery Time
Qrr
IF=20A, dI/dt=500A/µs
13.6
Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs
24.7
ns
nC
VGS=10V, VDS=15V, RL=0.75Ω,
RGEN=3Ω
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on RθJA t≤ 10s and the maximum allowed junction temperature of 150°C. The value in any given application
depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initial TJ =25°C.
D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is limited by package.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev.1.0: June 2013
www.aosmd.com
Page 6 of 10
AON6978
Q2-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
100
3V
VDS=5V
4.5V
80
2.5V
80
10V
60
ID(A)
ID (A)
60
40
40
20
125°C
20
25°C
VGS=2V
0
0
0
1
2
3
4
5
0
8
2
3
4
5
Normalized On-Resistance
1.6
6
RDS(ON) (mΩ
Ω)
1
VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
VGS=4.5V
4
2
VGS=10V
0
VGS=10V
ID=20A
1.4
1.2
VGS=4.5V
ID=20A
1
0.8
0
5
10
15
20
25
30
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
0
25
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
(Note E)
8
1.0E+01
ID=20A
1.0E+00
125°C
125°C
1.0E-01
IS (A)
RDS(ON) (mΩ
Ω)
6
4
1.0E-02
25°C
1.0E-03
25°C
2
1.0E-04
0
1.0E-05
2
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev.1.0: June 2013
4
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0.0
0.2
0.4
0.6
0.8
1.0
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
Page 7 of 10
AON6978
Q2-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
4000
VDS=15V
ID=20A
3500
8
Capacitance (pF)
VGS (Volts)
3000
6
4
Ciss
2500
2000
1500
1000
2
Coss
500
0
0
0
10
20
30
40
Qg (nC)
Figure 7: Gate-Charge Characteristics
50
0
10
15
20
25
VDS (Volts)
Figure 8: Capacitance Characteristics
30
10µs
100µs
10.0
1.0
TJ(Max)=150°C
TC=25°C
400
RDS(ON)
limited
1ms
10ms
TJ(Max)=150°C
TC=25°C
DC
0.1
Power (W)
100.0
5
500
1000.0
ID (Amps)
Crss
300
200
100
0.0
0
0.01
0.1
1
VDS (Volts)
10
100
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-Case
(Note F)
VGS> or equal to 4.5V
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
Zθ JC Normalized Transient
Thermal Resistance
10
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJC=3.8°C/W
1
PD
0.1
Single Pulse
Ton
T
0.01
1E-05
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev.1.0: June 2013
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Page 8 of 10
AON6978
40
40
30
30
Current rating ID(A)
Power Dissipation (W)
Q2-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
20
10
0
20
10
0
0
25
50
75
100
125
TCASE (°C)
Figure 12: Power De-rating (Note F)
150
0
25
50
75
100
125
TCASE (°C)
Figure 13: Current De-rating (Note F)
150
10000
TA=25°C
Power (W)
1000
100
10
1
1E-05
Zθ JA Normalized Transient
Thermal Resistance
10
1
0.001
0.1
10
Pulse Width (s)
Figure 14: Single Pulse Power Rating Junction-to-Ambient (Note H)
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
1000
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJA=60°C/W
0.1
PD
0.01
Single Pulse
Ton
T
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 15: Normalized Maximum Transient Thermal Impedance (Note H)
Rev.1.0: June 2013
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Page 9 of 10
AON6978
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
+ Vds
VDC
-
Qgs
Qgd
VDC
-
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
90%
+ Vdd
DUT
Vgs
VDC
-
Rg
10%
Vgs
Vgs
t d(on)
tr
t d(off)
t on
tf
toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
2
E AR = 1/2 LIAR
Vds
BVDSS
Vds
Id
+ Vdd
Vgs
Vgs
I AR
VDC
-
Rg
Id
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
DUT
Vds Isd
Vgs
Ig
Rev.1.0: June 2013
Vgs
L
Isd
+ Vdd
t rr
dI/dt
I RM
Vdd
VDC
-
IF
Vds
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Page 10 of 10