PANASONIC MIP514

Intelligent Power Devices (IPDs)
MIP514
Silicon MOSFET type Integrated Circuit
■ Features
Unit: mm
• Built-in five protection functions (over-current, over-voltage, loadshort-circuit, over heat, ESD)
• Both DC and AC power suply are available
6.9±0.1
(4.0)
2.5±0.1
(0.8)
■ Applications
(0.5)
(1.0)
(0.2)
4.5±0.1
(0.7)
(1.0)
0.65 max.
14.5±0.5
• Lamp, solenoid drive
• Motor drive
■ Absolute Maximum Ratings Ta = 25°C ± 3°C
Parameter
Symbol
Rating
Unit
Output voltage
VDS
− 0.5 to +45
V
Output current
IO
2.0
A
Input voltage
VIN
− 0.5 to +6.0
V
Input current
IIN
±5
mA
ECLP
28
mJ
Power dissipation *
PD
1.0
W
Operating ambient temperature
Topr
−40 to +85
°C
Channel temperature
Tch
150
°C
Storage temperature
Tstg
−55 to +150
°C
Drain clamp energy endurance
0.45+0.10
–0.05
1.05±0.05
2.5±0.5
2.5±0.5
1
0.45+0.10
–0.05
2
3
1: In
2: Drain
3: Source
MT-2-A1 Package
Marking Symbol: MIP514
Note) *: Mounting on the PCB (100 mm × 100 mm, glass epoxy substrate) (Ta = 25°C).
■ Block Diagram
Drain
2
Over-current
protection
In 1
Load short-circuit
protection
Gate cut-off circuit
ESD
protection
Over-heat
protection
Over-voltage
protection
3
Source
Publication date: April 2002
SLB00046AED
1
MIP514
■ Electrical Characteristics TC = 25°C ± 3°C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
0.3
0.45
Ω
0.3
0.45
V
RDS(ON)
VIN = 5 V, IDS = 1 A
Drain-source voltage
VDS(ON)
VIN = 5 V, IDS = 1 A
Drain clamp voltage
VDS(CLP)
VIN = 0 V, IDS = 3 mA
Drain-off current 1
IDS(OFF)1
VIN = 0 V, VDS = 12 V
0.01
5
Drain-off current 2
IDS(OFF)2
VIN = 0 V, VDS = 25 V
0.02
8
Drain-off current 3
IDS(OFF)3
VIN = 0 V, VDS = 40 V
Input threshold voltage
VTH(IN)
VDS = 5 V, IDS = 1 mA
High-level input voltage
VIN(H)
IDS = 1 A
Low-level input voltage
VIN(L)
IDS = 1 mA
IIN(ON)
On-state resistance
45
1.2
57
V
µA
0.08
10
1.8
3.0
V
0.8
V
4
V
VIN = 5 V, VDS = 0 V
0.2
0.5
mA
Input current (act on protection) *
IIN(PROT)
VIN = 5 V
0.45
1.00
mA
Over current protection limit
(short circuit load protection limit)
IOCP
(VSHT )
VIN = 5 V
Input current (normal)
2.5
(1.2)
4
(1.6)
A
(V)
Note) 1. At on-state when drain voltage exceeds the "Short circuit load protection voltage", output current begin to oscillate.
2. When drain voltage exceeds the "drain clamp voltage" output MOS turn on, so drain voltage are clamped before the drainsource junction become breakdown.
3. *: State of short circuit load protection and over heat protection (designed guarantee).
■ Electrical Characteristics (Reference value: Non guarantee value)
Parameter
Cutoff temperature at overheat
Symbol
TSHD
Turn-on time
tON
Turn-off time
tOFF
Conditions
Min
Typ
Max
Unit
VIN = 5 V
140
°C
VDD = 30 V, RL = 30 Ω
IDS = 1 A, VIN = 5 V
6
µs
15
Note) If the chip temperature exceeds the "over heat protection temperature", output current is shut down. And if the chip cool
down, the protection will operate automatically again.
2
SLB00046AED
Request for your special attention and precautions in using the technical information
and semiconductors described in this book
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and applied circuits examples of the products. It neither warrants non-infringement of intellectual
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Consult our sales staff in advance for information on the following applications:
• Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment,
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reliability are required, or if the failure or malfunction of the products may directly jeopardize life or
harm the human body.
• Any applications other than the standard applications intended.
(5) The products and product specifications described in this book are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the
products, therefore, ask for the most up-to-date Product Standards in advance to make sure that
the latest specifications satisfy your requirements.
(6) When designing your equipment, comply with the guaranteed values, in particular those of maximum
rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise,
we will not be liable for any defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of
incidence of break down and failure mode, possible to occur to semiconductor products. Measures
on the systems such as redundant design, arresting the spread of fire or preventing glitch are
recommended in order to prevent physical injury, fire, social damages, for example, by using the
products.
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2002 MAY