UFT800A ... UFT800J UFT800A ... UFT800J Superfast Efficient Rectifiers – Single Diode Superschnelle Hocheffizienz-Gleichrichter – Einzeldiode Version 2013-05-07 0.42±0.1 ±0.3 ±0.2 13.9 2.67 2.8±0.3 4 ±0.3 Ø 3.8±0.2 4 Type Typ 1 Nominal current Nennstrom 8.7 4.5±0.2 10.1±0.3 3 3.9±0.3 1.2 14.9±0.7 ±0.2 1.3 ±0.1 1 3 8A Repetitive peak reverse voltage Periodische Spitzensperrspannung 50...600 V Plastic case Kunststoffgehäuse TO-220AC Weight approx. Gewicht ca. 1.8 g Plastic material has UL classification 94V-0 Gehäusematerial UL94V-0 klassifiziert 0.8±0.2 5.08±0.1 Standard packaging in tubes Standard Lieferform in Stangen Dimensions - Maße [mm] Maximum ratings and Characteristics Type Typ Grenz- und Kennwerte Repetitive peak reverse voltage Periodische Spitzensperrspannung VRRM [V] Surge peak reverse voltage Stoßspitzensperrspannung VRSM [V] Forward voltage Durchlass-Spannung VF [V] 1) IF = 5 A IF = 8 A UFT800A 50 50 < 0.9 < 1.0 UFT800B 100 100 < 0.9 < 1.0 UFT800C 150 150 < 0.9 < 1.0 UFT800D 200 200 < 0.9 < 1.0 UFT800F 300 300 < 1.15 < 1.25 UFT800G 400 400 < 1.15 < 1.25 UFT800H 500 500 < 1.6 < 1.75 UFT800J 600 600 < 1.6 < 1.75 Max. average forward rectified current, R-load Dauergrenzstrom in Einwegschaltung mit R-Last TC = 100°C IFAV 8A Repetitive peak forward current Periodischer Spitzenstrom f > 15 Hz IFRM 22 A 2) Peak forward surge current, 50/60 Hz half sine-wave Stoßstrom für eine 50/60 Hz Sinus-Halbwelle TA = 25°C IFSM 112/125 A Rating for fusing, t < 10 ms Grenzlastintegral, t < 10 ms TA = 25°C i2t 62 A2s Tj -50...+150°C -50...+175°C Junction temperature – Sperrschichttemperatur Storage temperature – Lagerungstemperatur 1 2 TS Tj = 25°C Max. temperature of the case TC = 100°C – Max. Temperatur des Gehäuses TC = 100°C © Diotec Semiconductor AG http://www.diotec.com/ 1 UFT800A ... UFT800J Characteristics Kennwerte Type Typ Reverse recovery time Sperrverzugszeit Reverse recovery time Sperrverzugszeit trr [ns] 3) trr [ns] 4) UFT800A ... UFT800D < 25 < 35 UFT800F ... UFT800J < 35 < 45 Tj = 25°C Leakage current Sperrstrom Tj = 25°C VR = VRRM IR Thermal resistance junction to case Wärmewiderstand Sperrschicht – Gehäuse < 5 µA RthC < 2.5 K/W 10 2 120 [%] [A] 100 10 80 Tj = 125°C Tj = 25°C 1 60 40 10-1 20 IF IFAV 0 -2 0 TC 50 100 150 [°C] Rated forward current vs. temp. of the case Zul. Richtstrom in Abh. v. d. Gehäusetemperatur 3 4 2 200a-(5a-0.95v) 10 0.4 VF 0.8 1.0 1.2 1.4 [V] 1.8 Forward characteristics (typical values) Durchlasskennlinien (typische Werte) IF = 0.5 A through/über IR = 1 A to/auf IR = 0.25 A IF = 1.0 A, di/dt = -50 A/µs, VR = 30 V http://www.diotec.com/ © Diotec Semiconductor AG