SiA408DJ Vishay Siliconix N-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a 0.036 at VGS = 10 V 4.5 0.039 at VGS = 4.5 V 4.5 0.053 at VGS = 2.5 V 4.5 VDS (V) 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • New Thermally Enhanced PowerPAK® SC-70 Package - Small Footprint Area • Compliant to RoHS Directive 2002/95/EC Qg (Typ.) 7 nC APPLICATIONS • Load Switch for Portable Applications • DC/DC Converter PowerPAK SC-70-6L-Single D 1 D 2 Marking Code D 3 6 AEX G D 5 S G XXX Lot Traceability and Date code S D 2.05 mm Part # code S 2.05 mm 4 Ordering Information: SiA408DJ-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) Symbol VDS VGS TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Limit 30 ± 12 4.5a 4.5a 4.5a, b, c 4.5b, c 20 4.5a 2.8b, c 17.9 11.4 3.4b, c 2.2b, c - 55 to 150 260 ID IDM Pulsed Drain Current TC = 25 °C TA = 25 °C TC = 25 °C TC = 70 °C Maximum Power Dissipation TA = 25 °C TA = 70 °C Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)d, e Continuous Source-Drain Diode Current IS PD TJ, Tstg Unit V A W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambientb, f t5s Symbol RthJA RthJC Typical 29 5.5 Maximum 37 7 Unit °C/W Maximum Junction-to-Case (Drain) Steady State Notes: a. Package limited b. Surface mounted on 1" x 1" FR4 board. c. t = 5 s. d. See solder profile (www.vishay.com/ppg?73257). The PowerPAK SC-70 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under steady state conditions is 80 °C/W. Document Number: 69255 S10-2546-Rev. D, 08-Nov-10 www.vishay.com 1 SiA408DJ Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Symbol Test Conditions Min. VDS VGS = 0 V, ID = 250 µA 30 Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS Temperature Coefficient VDS/TJ VGS(th) Temperature Coefficient VGS(th)/TJ Gate-Source Threshold Voltage V 30 ID = 250 µA mV/°C -4 VGS(th) VDS = VGS , ID = 250 µA 1.6 V Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 12 V ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = 30 V, VGS = 0 V 1 VDS = 30 V, VGS = 0 V, TJ = 55 °C 10 a On-State Drain Current Drain-Source On-State Resistancea Forward Transconductancea 0.6 ID(on) VDS 5 V, VGS = 10 V VGS 10 V, ID = 5.3 A 0.030 0.036 RDS(on) VGS 4.5 V, ID = 5.1 A 0.032 0.039 VGS 2.5 V, ID = 2.5 A 0.040 0.053 VDS = 10 V, ID = 5.3 A 20 VDS = 15 V, VGS = 0 V, f = 1 MHz 130 gfs 20 µA A S Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time 830 VDS = 15 V, VGS = 10 V, ID = 7.8 A VDS = 15 V, VGS = 4.5 V, ID = 7.8 A td(off) 16 24 7 11 2 VDD = 15 V, RL = 2.4 ID 6.2 A, VGEN = 4.5 V, Rg = 1 0.6 3 6 10 15 10 15 35 55 tf 15 25 td(on) 10 15 tr td(off) nC 1.7 f = 1 MHz td(on) tr pF 60 VDD = 15 V, RL = 2.4 ID 6.2 A, VGEN = 10 V, Rg = 1 tf 10 15 20 30 10 15 ns Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS Pulse Diode Forward Current ISM Body Diode Voltage VSD TC = 25 °C 4.5 20 IS = 6.2 A, VGS 0 V 0.8 1.2 A V Body Diode Reverse Recovery Time trr 20 40 ns Body Diode Reverse Recovery Charge Qrr 15 30 nC Reverse Recovery Fall Time ta Reverse Recovery Rise Time tb IF = 6.2 A, dI/dt = 100 A/µs, TJ = 25 °C 13 7 ns Notes: a. Pulse test; pulse width 300 µs, duty cycle 2 % b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 69255 S10-2546-Rev. D, 08-Nov-10 SiA408DJ Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 20 20 VGS = 10 V thru 3 V 16 I D - Drain Current (A) I D - Drain Current (A) 16 12 8 2V 4 12 8 TC = 125 °C 4 25 °C - 55 °C 0 0.0 0.5 1.0 1.5 2.0 2.5 0 0.0 3.0 0.5 VDS - Drain-to-Source Voltage (V) 1.0 2.5 3.0 25 30 Transfer Characteristics 1200 0.05 1000 0.04 C - Capacitance (pF) R DS(on) - On-Resistance (Ω) 2.0 VGS - Gate-to-Source Voltage (V) Output Characteristics VGS = 4.5 V 0.03 VGS = 10 V 0.02 Ciss 800 600 400 Coss 0.01 Crss 200 0.00 0 0 4 8 12 16 0 20 5 ID - Drain Current (A) 10 15 20 VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current and Gate Voltage Capacitance 10 1.6 VGS = 10 V ID = 5.3 A ID = 7.8 A 8 1.4 VDS = 15 V R DS(on) - On-Resistance (Normalized) V GS - Gate-to-Source Voltage (V) 1.5 6 VDS = 24 V 4 2 1.2 1.0 0.8 0 0 3 6 9 12 15 18 0.6 - 50 - 25 0 25 50 75 100 125 Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature Document Number: 69255 S10-2546-Rev. D, 08-Nov-10 150 www.vishay.com 3 SiA408DJ Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 0.10 R DS(on) - Drain-to-Source On-Resistance (Ω) 20 TJ = 150 °C I S - Source Current (A) 10 TJ = 25 °C 1 0.0 ID = 5.3 A 0.08 0.06 TJ = 125 °C 0.04 TJ = 25 °C 0.02 0.00 0.2 0.4 0.6 0.8 1.0 1.2 0 1.4 2 VSD - Source-to-Drain Voltage (V) 4 6 8 10 VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 1.6 30 25 1.4 20 1.2 Power (W) VGS(th) (V) ID = 250 µA 1.0 15 10 0.8 5 0.6 - 50 - 25 0 25 50 75 100 125 0 0.001 150 0.01 0.1 1 10 100 1000 TJ - Temperature (°C) Time (s) Threshold Voltage Single Pulse Power (Junction-to-Ambient) 100 Limited by RDS(on)* I D - Drain Current (A) 10 100 µs 1 ms 1 10 ms 100 ms 1s 10 s 0.1 DC TA = 25 °C Single Pulse BVDSS Limited 0.01 0.1 1 * VGS 10 100 VDS - Drain-to-Source Voltage (V) minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient www.vishay.com 4 Document Number: 69255 S10-2546-Rev. D, 08-Nov-10 SiA408DJ Vishay Siliconix 20 20 15 15 Power Dissipation (W) ID - Drain Current (A) TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 10 Package Limited 10 5 5 0 0 0 25 50 75 100 TC - Case Temperature (°C) Current Derating* 125 150 25 50 75 100 125 150 TC - Case Temperature (°C) Power Derating * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Document Number: 69255 S10-2546-Rev. D, 08-Nov-10 www.vishay.com 5 SiA408DJ Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 PDM t1 0.05 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 65 °C/W 0.02 3. TJM - TA = PDMZthJA(t) Single Pulse 0.01 10-4 10-3 4. Surface Mounted 10-2 10-1 1 Square Wave Pulse Duration (s) 10 100 1000 Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.05 Single Pulse 0.1 10-4 0.02 10-3 10-2 10-1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?69255. www.vishay.com 6 Document Number: 69255 S10-2546-Rev. D, 08-Nov-10 Package Information Vishay Siliconix b e PIN1 PIN3 PIN1 PIN2 PIN3 PIN5 K1 E1 E1 K PIN6 K3 D1 D1 K D2 D1 E3 E1 E2 K4 K L PIN2 b e L PowerPAK® SC70-6L PIN6 PIN4 K2 PIN5 K1 K2 BACKSIDE VIEW OF SINGLE PIN4 K2 BACKSIDE VIEW OF DUAL A D C A1 E Notes: 1. All dimensions are in millimeters 2. Package outline exclusive of mold flash and metal burr 3. Package outline inclusive of plating Z z DETAIL Z SINGLE PAD DIM A MILLIMETERS DUAL PAD INCHES MILLIMETERS INCHES Min Nom Max Min Nom Max Min Nom Max Min Nom Max 0.675 0.75 0.80 0.027 0.030 0.032 0.675 0.75 0.80 0.027 0.030 0.032 A1 0 - 0.05 0 - 0.002 0 - 0.05 0 - 0.002 b 0.23 0.30 0.38 0.009 0.012 0.015 0.23 0.30 0.38 0.009 0.012 0.015 C 0.15 0.20 0.25 0.006 0.008 0.010 0.15 0.20 0.25 0.006 0.008 0.010 D 1.98 2.05 2.15 0.078 0.081 0.085 1.98 2.05 2.15 0.078 0.081 0.085 D1 0.85 0.95 1.05 0.033 0.037 0.041 0.513 0.613 0.713 0.020 0.024 0.028 D2 0.135 0.235 0.335 0.005 0.009 0.013 E 1.98 2.05 2.15 0.078 0.081 0.085 1.98 2.05 2.15 0.078 0.081 0.085 E1 1.40 1.50 1.60 0.055 0.059 0.063 0.85 0.95 1.05 0.033 0.037 0.041 E2 0.345 0.395 0.445 0.014 0.016 0.018 E3 0.425 0.475 0.525 0.017 0.019 0.021 e 0.65 BSC 0.026 BSC 0.65 BSC 0.026 BSC K 0.275 TYP 0.011 TYP 0.275 TYP 0.011 TYP K1 0.400 TYP 0.016 TYP 0.320 TYP 0.013 TYP K2 0.240 TYP 0.009 TYP 0.252 TYP 0.010 TYP K3 0.225 TYP 0.009 TYP K4 L 0.355 TYP 0.175 0.275 0.014 TYP 0.375 T 0.007 0.011 0.015 0.175 0.275 0.375 0.007 0.011 0.015 0.05 0.10 0.15 0.002 0.004 0.006 ECN: C-07431 − Rev. C, 06-Aug-07 DWG: 5934 Document Number: 73001 06-Aug-07 www.vishay.com 1 Application Note 826 Vishay Siliconix RECOMMENDED PAD LAYOUT FOR PowerPAK® SC70-6L Single 0.300 (0.012) 0.650 (0.026) 0.350 (0.014) 0.275 (0.011) 0.550 (0.022) 0.475 (0.019) 2.200 (0.087) 1.500 (0.059) 0.870 (0.034) 0.235 (0.009) 0.355 (0.014) 0.350 (0.014) 1 0.650 (0.026) 0.300 (0.012) 0.950 (0.037) Dimensions in mm/(Inches) Return to Index APPLICATION NOTE Document Number: 70486 Revision: 21-Jan-08 www.vishay.com 11 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU. Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000