VISHAY SIA483DJ

New Product
SiA483DJ
Vishay Siliconix
P-Channel 30 V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
- 30
RDS(on) () (Max.)
ID (A)
0.021at VGS = - 10 V
- 12a
0.030 at VGS = - 4.5 V
- 12a
Qg (Typ.)
21 nC
PowerPAK SC-70-6L-Single
1
APPLICATIONS
D
• Smart Phones, Tablet PCs, Mobile Computing:
- Battery Switches
- Load Switches
- Power Management
- DC/DC Converters
2
D
3
6
G
D
5
S
D
2.05 mm
• TrenchFET® Power MOSFET
• Thermally Enhanced PowerPAK® SC-70 Package
- Small Footprint Area
- Low On-Resistance
• 100 % Rg Tested
• Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
2.05 mm
S
S
Marking Code
4
G
BYX
Ordering Information:
SiA483DJ-T1-GE3 (Lead (Pb)-free and Halogen-free)
Part # code
XXX
Lot Traceability
and Date code
P-Channel MOSFET
D
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
Limit
Drain-Source Voltage
VDS
- 30
Gate-Source Voltage
VGS
± 20
TC = 70 °C
TA = 25 °C
- 12a
ID
- 10 b, c
- 8b, c
TA = 70 °C
IDM
Pulsed Drain Current (t = 300 µs)
Continuous Source-Drain Diode Current
Maximum Power Dissipation
TC = 25 °C
TA = 25 °C
- 40
IS
- 2.9b, c
19
TC = 70 °C
12
PD
W
3.5b, c
2.2b, c
TA = 70 °C
TJ, Tstg
Operating Junction and Storage Temperature Range
A
- 12a
TC = 25 °C
TA = 25 °C
V
- 12a
TC = 25 °C
Continuous Drain Current (TJ = 150 °C)
Unit
- 55 to 150
Soldering Recommendations (Peak Temperature)d, e
°C
260
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambientb, f
Maximum Junction-to-Case (Drain)
Symbol
Typical
Maximum
t5s
RthJA
28
36
Steady State
RthJC
5.3
6.5
Unit
°C/W
Notes:
a. Package limited
b. Surface mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. See solder profile (www.vishay.com/doc?73257). The PowerPAK SC-70 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and
is not required to ensure adequate bottom side solder interconnection.
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under steady state conditions is 80 °C/W.
Document Number: 62779
S12-2394-Rev. A, 15-Oct-12
For technical questions, contact: [email protected]
www.vishay.com
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
SiA483DJ
Vishay Siliconix
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
Parameter
Symbol
Test Conditions
Min.
VDS
VGS = 0, ID = - 250 µA
- 30
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
VDS/TJ
VDS Temperature Coefficient
VGS(th)/TJ
Gate-Source Threshold Voltage
VGS(th)
VDS = VGS, ID = - 250 µA
IGSS
Gate-Source Leakage
Zero Gate Voltage Drain Current
IDSS
On-State Drain Currenta
ID(on)
Drain-Source On-State Resistancea
Forward Transconductancea
RDS(on)
gfs
- 21
ID = - 250 µA
VGS(th) Temperature Coefficient
V
mV/°C
4.6
- 2.2
V
VDS = 0 V, VGS = ± 20 V
± 100
nA
VDS = - 30 V, VGS = 0 V
-1
VDS = - 30 V, VGS = 0 V, TJ = 55 °C
- 10
VDS - 5 V, VGS = - 10 V
-1
- 10
µA
A
VGS = - 10 V, ID = - 5 A
0.016
0.021
VGS = - 4.5 V, ID = - 3 A
0.024
0.030
VDS = - 10 V, ID = - 5 A
23

S
b
Dynamic
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Gate Resistance
Rg
Turn-On Delay Time
1550
VDS = - 15 V, VGS = 0 V, f = 1 MHz
Rise Time
tr
150
29
45
14
21
VDS = - 15 V, VGS = - 4.5 V, ID = - 10 A
4.4
Turn-On Delay Time
Rise Time
f = 1 MHz
Turn-Off Delay Time
3.7
7.4
37
80
30
60
50
8
20
td(on)
10
10
10
20
td(off)
Fall Time
VDD = - 15 V, RL = 1.9 
ID  - 8 A, VGEN = - 4.5 V, Rg = 1 
0.7
tf
tr
nC
4.8
25
td(off)
Fall Time
pF
VDS = - 15 V, VGS = - 10 V, ID = - 10 A
td(on)
Turn-Off Delay Time
175
VDD = - 15 V, RL = 1.9 
ID  - 8 A, VGEN = - 10 V, Rg = 1 
tf
27
55
9
20

ns
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
Pulse Diode Forward Current
ISM
Body Diode Voltage
VSD
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Qrr
Reverse Recovery Fall Time
ta
Reverse Recovery Rise Time
tb
TC = 25 °C
- 12
- 40
IS = - 8 A, VGS = 0
IF = - 8 A, dI/dt = 100 A/µs, TJ = 25 °C
A
- 0.8
- 1.2
V
17
40
ns
10
20
nC
10
7
ns
Notes:
a. Pulse test; pulse width  300 µs, duty cycle  2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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2
For technical questions, contact: [email protected]
Document Number: 62779
S12-2394-Rev. A, 15-Oct-12
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
SiA483DJ
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
20
40
VGS = 10 V thru 5 V
VGS = 4 V
16
ID - Drain Current (A)
ID - Drain Current (A)
30
20
12
8
TC = 25 °C
10
4
VGS = 3 V
TC = 125 °C
TC = - 55 °C
0
0
0.0
0.5
1.0
1.5
2.0
2.5
0.0
3.0
1.0
2.0
4.0
VDS - Drain-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
0.040
2000
Ciss
1600
0.030
C - Capacitance (pF)
RDS(on) - On-Resistance (Ω)
3.0
VGS - Gate-to-Source Voltage (V)
VGS = 4.5 V
0.020
VGS = 10 V
1200
800
0.010
400
Coss
Crss
0.000
0
0
10
20
30
40
0
12
18
24
ID - Drain Current (A)
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current and Gate Voltage
Capacitance
30
1.6
ID = 10 A
8
VDS = 15 V
VDS = 7.5 V
6
RDS(on) - On-Resistance (Normalized)
10
VGS - Gate-to-Source Voltage (V)
6
VDS = 24 V
4
2
VGS = 10 V
ID = 5 A
1.4
VGS = 4.5 V
1.2
1.0
0.8
0.6
0
0
7
14
21
28
35
- 50
- 25
0
25
50
75
100
125
150
Qg - Total Gate Charge (nC)
TJ - Junction Temperature (°C)
Gate Charge
On-Resistance vs. Junction Temperature
Document Number: 62779
S12-2394-Rev. A, 15-Oct-12
For technical questions, contact: [email protected]
www.vishay.com
3
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
SiA483DJ
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
0.080
100
10
RDS(on) - On-Resistance (Ω)
IS - Source Current (A)
ID = 8 A
TJ = 150 °C
TJ = 25 °C
1
0.060
0.040
TJ = 125 °C
0.020
TJ = 25 °C
0.1
0.000
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0.0
2.0
VSD - Source-to-Drain Voltage (V)
4.0
6.0
8.0
10.0
VGS - Gate-to-Source Voltage (V)
Soure-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
30
2.0
25
1.8
1.4
Power (W)
VGS(th) (V)
20
1.6
ID = 250 μA
15
10
1.2
5
1.0
- 50
- 25
0
25
50
75
100
125
0
0.001
150
0.01
0.1
TJ - Temperature (°C)
1
Time (s)
10
100
1000
Single Pulse Power, Junction-to-Ambient
Threshold Voltage
100
Limited by RDS(on)*
ID - Drain Current (A)
10
100 μs
1 ms
1
10 ms
100 ms
1s
10 s
TA = 25 °C
0.1
DC
BVDSS Limited
0.01
0.1
1
10
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Ambient
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4
For technical questions, contact: [email protected]
Document Number: 62779
S12-2394-Rev. A, 15-Oct-12
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
SiA483DJ
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
30
20
Power Dissipation (W)
ID - Drain Current (A)
24
18
12
Package Limited
15
10
5
6
0
0
0
25
50
75
100
125
150
TC - Case Temperature (°C)
25
50
75
100
125
TC - Case Temperature (°C)
Current Derating*
Power Derating
150
* The power dissipation PD is based on TJ(max.) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 62779
S12-2394-Rev. A, 15-Oct-12
For technical questions, contact: [email protected]
www.vishay.com
5
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
SiA483DJ
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
Notes:
0.05
PDM
0.1
t1
0.02
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA = 80 C/W
3. TJM - TA = PDMZthJA(t)
Single Pulse
0.01
10-4
10-3
4. Surface Mounted
10-2
10-1
1
Square Wave Pulse Duration (s)
10
100
1000
Normalized Thermal Transient Impedance, Junction-to-Ambient
Normalized Effective Transient
Thermal Impedance
1
0.1
10-4
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Single Pulse
10-3
10-2
10-1
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?62779.
www.vishay.com
6
For technical questions, contact: [email protected]
Document Number: 62779
S12-2394-Rev. A, 15-Oct-12
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
Vishay Siliconix
b
e
PIN1
PIN3
PIN1
PIN2
PIN3
PIN5
K1
E1
E1
K
PIN6
K3
D1
D1
K
D2
D1
E3
E1
E2
K4
K
L
PIN2
b
e
L
PowerPAK® SC70-6L
PIN6
PIN4
K2
PIN5
K1
K2
BACKSIDE VIEW OF SINGLE
PIN4
K2
BACKSIDE VIEW OF DUAL
A
D
C
A1
E
Notes:
1. All dimensions are in millimeters
2. Package outline exclusive of mold flash and metal burr
3. Package outline inclusive of plating
Z
z
DETAIL Z
SINGLE PAD
DIM
A
MILLIMETERS
DUAL PAD
INCHES
MILLIMETERS
INCHES
Min
Nom
Max
Min
Nom
Max
Min
Nom
Max
Min
Nom
Max
0.675
0.75
0.80
0.027
0.030
0.032
0.675
0.75
0.80
0.027
0.030
0.032
A1
0
-
0.05
0
-
0.002
0
-
0.05
0
-
0.002
b
0.23
0.30
0.38
0.009
0.012
0.015
0.23
0.30
0.38
0.009
0.012
0.015
C
0.15
0.20
0.25
0.006
0.008
0.010
0.15
0.20
0.25
0.006
0.008
0.010
D
1.98
2.05
2.15
0.078
0.081
0.085
1.98
2.05
2.15
0.078
0.081
0.085
D1
0.85
0.95
1.05
0.033
0.037
0.041
0.513
0.613
0.713
0.020
0.024
0.028
D2
0.135
0.235
0.335
0.005
0.009
0.013
E
1.98
2.05
2.15
0.078
0.081
0.085
1.98
2.05
2.15
0.078
0.081
0.085
E1
1.40
1.50
1.60
0.055
0.059
0.063
0.85
0.95
1.05
0.033
0.037
0.041
E2
0.345
0.395
0.445
0.014
0.016
0.018
E3
0.425
0.475
0.525
0.017
0.019
0.021
e
0.65 BSC
0.026 BSC
0.65 BSC
0.026 BSC
K
0.275 TYP
0.011 TYP
0.275 TYP
0.011 TYP
K1
0.400 TYP
0.016 TYP
0.320 TYP
0.013 TYP
K2
0.240 TYP
0.009 TYP
0.252 TYP
0.010 TYP
K3
0.225 TYP
0.009 TYP
K4
L
0.355 TYP
0.175
0.275
0.014 TYP
0.375
T
0.007
0.011
0.015
0.175
0.275
0.375
0.007
0.011
0.015
0.05
0.10
0.15
0.002
0.004
0.006
ECN: C-07431 − Rev. C, 06-Aug-07
DWG: 5934
Document Number: 73001
06-Aug-07
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1
Application Note 826
Vishay Siliconix
RECOMMENDED PAD LAYOUT FOR PowerPAK® SC70-6L Single
0.300 (0.012)
0.650 (0.026)
0.350 (0.014)
0.275 (0.011)
0.550 (0.022)
0.475 (0.019)
2.200 (0.087)
1.500
(0.059)
0.870 (0.034)
0.235 (0.009)
0.355 (0.014)
0.350 (0.014)
1
0.650 (0.026)
0.300 (0.012)
0.950 (0.037)
Dimensions in mm/(Inches)
Return to Index
APPLICATION NOTE
Document Number: 70486
Revision: 21-Jan-08
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11
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Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
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Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
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including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
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Material Category Policy
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.
Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free
requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
conform to JEDEC JS709A standards.
Revision: 02-Oct-12
1
Document Number: 91000