DG2720 www.vishay.com Vishay Siliconix 2 Port, USB 2.0 High Speed (480 Mbps) Switch, DPDT Analog Switch DESCRIPTION FEATURES The DG2720 is 2 Port high speed analog switch optimized for USB 2.0 signal switching. The DG2720 switch is configured in DPDT. It handles bidirectional signal flow, achieving a 620 MHz -3 dB bandwidth with 5 pF load, and a port to port Crosstalk and isolation at -49 dB. • Wide operation voltage range Processed with high density sub micron CMOS, the DG2720 provide low parasitic capacitance. Signals are routed with minimized phase distortion and attain a bit to bit skew is as low as 40 pS. The DG2720 is designed for a wide range of operating voltages, from 2.7 V to 4.3 V that can be driven directly from one cell Li-ion battery. On-chip circuitry protects against conditions when either the D+/D- lines are shorted to the VBUS at the USB port. Additionally, logic control pins (S and OE) can tolerate the presence of voltages that are above the supply power rail (V+). The control logic threshold is guaranteed to be (VIH = 1.3 V/min). Latch up current is greater than 300 mA, as per JESD78, and its ESD tolerance exceeds 8 kV. Packaged in ultra small miniQFN-10 (1.4 mm x 1.8 mm x 0.55 mm), it is ideal for portable high speed mix signal switching application. As a committed partner to the community and the environment, Vishay Siliconix manufactures this product with lead (Pb)-free device termination. The miniQFN-10 package has a nickel-palladium-gold device termination and is represented by the lead (Pb)-free “-E4” suffix to the ordering part number. The nickel-palladium-gold device terminations meet all JEDEC® standards for reflow and MSL rating. • Low on-resistance, 5.7 Ω (typical at 3 V) • Low capacitance, 5.6 pF (typical) • 3 dB high bandwidth with 5 pF load: 620 MHz (typical) • Low bit to bit skew: 40 pS (typical) • Low power consumption • Low logic threshold: V • Power down protection: D+/D- pins can tolerate up to 5 V when V+ = 0 V • Logic (S and OE) above V+ tolerance • Latch-up current greater than 300 mA per JESD78 • 8 kV ESD protection (HBM) • Lead (Pb)-free low profile miniQFN-10 (1.4 mm x 1.8 mm x 0.55 mm) • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • Cellular phones • Portable media players • PDA • Digital camera • GPS • Notebook computer • TV, monitor, and set top box As a further sign of Vishay Siliconix's commitment, the DG2720 is fully RoHS complaint. FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION HSD1- HSD2- miniQFN-10L 7 6 5 D- V+ 9 4 GND S 10 3 D+ Pin 1: LONG LEAD 1 2 HSD2+ 18 2 HSD1+ OE Gx Pin 1 Device marking: Gx for DG2720 x = Date/Lot traceability code Top View S14-2383-Rev. E, 15-Dec-14 Document Number: 74593 1 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 DG2720 www.vishay.com Vishay Siliconix ORDERING INFORMATION TEMP RANGE PACKAGE PART NUMBER -40 °C to +85 °C miniQFN-10 DG2720DN-T1-E4 TRUTH TABLE PIN DESCRIPTIONS OE (PIN 8) S (PIN 10) FUNCTION PIN NAME DESCRIPTION 0 0 D+ = HSD1+ and D- = HSD1- OE Bus Switch Enable 0 1 D+ = HSD2+ and D- = HSD2- S Select Input 1 X Disconnect HSD1±, HSD2±, D± Data Port 0.5 Differential Signal (V) 0.4 0.3 0.2 0.1 0 - 0.1 - 0.2 - 0.3 - 0.4 - 0.5 0 0.2 0.4 0.6 0.8 1 1.2 Time (ns) 1.4 1.6 1.8 2 High Speed Signal Quality Eye Diagram Test with V+ = 3.3 V SUMMARY OF THE USB 2.0 SIGNAL QUALITY TEST RESULTS Compliance Test High Speed Signal Eye Test Pass EOP Width 7.95 bits Measured Signal Rate 480.0009 MHz Consecutive Jitter Range -59.8 ps to 68.2 ps, RMS Jitter 26.8 ps Paired JK Jitter Range -49.7 ps to 51.4 ps, RMS Jitter 25.3 ps Paired KJ Jitter Range -61.3 ps to 58.5 ps, RMS Jitter 26.8 ps ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAMETER Reference to GND LIMIT V+ S, OE, D±, HSD1±, HSD2± a Current (Any Terminal except S, OE, D±, HSD1±, HSD2±) -0.3 to +5 -0.3 to (V+ + 0.3) ± 250 Peak Current (Pulsed at 1 ms, 10 % duty cycle) ± 500 Power Dissipation (Packages) b ESD (Human Body Model) I/O to GND Latch-up (Current Injection) miniQFN-10 c V 30 Continuous Current (S, OE, D±, HSD1±, HSD2±) Storage Temperature (D Suffix) UNIT mA -65 to +150 °C 208 mW 8 kV 350 mA Notes a. Signals on S, OE, D±, HSD1±, HSD2± exceeding V+ will be clamped by internal diodes. Limit forward diode current to maximum current ratings. b. All leads welded or soldered to PC board. c. Derate 2.6 mW/°C above 70 °C. S14-2383-Rev. E, 15-Dec-14 Document Number: 74593 2 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 DG2720 www.vishay.com Vishay Siliconix SPECIFICATIONS V+ = 3 V PARAMETER SYMBOL TEST CONDITIONS OTHERWISE UNLESS SPECIFIED LIMITS -40 to +85 °C TEMP. a UNIT MIN. b TYP. c MAX. b Analog Switch Analog Signal Range d VANALOG RDS(on) Full 0 - V+ Room - 5.7 7 On-Resistance RDS(on) V+ = 3 V, ID± = 8 mA, VHSD1/2± = 0.4 V Full - - 9 On-Resistance Match d ΔRON V+ = 3 V, ID± = 8 mA, VHSD1/2± = 0.4 V Room - 0.35 - V+ = 3 V, ID± = 8 mA, VHSD1/2± = 0 V, 1 V Room - 2 - On-Resistance Resistance Flatness d RON Flatness Switch Off Leakage Current I(off) V+ = 4.3 V, VHSD1/2± = 0.3 V, 3 V, VD± = 3 V, 0.3 V Full -100 - 100 Channel On Leakage Current I(on) V+ = 4.3 V, VHSD1/2± = 0.3 V, 4 V, VD± = 4 V, 0.3 V Full -200 - 200 V+ = 3 V to 3.6 V Full 1.3 - - V Ω nA Digital Control Input Voltage High VINH Input Voltage Low VINL Input Capacitance V+ = 4.3 V Full 1.7 - - V+ = 3 V to 4.3 V Full - - 0.5 Full - 5.6 - pF VIN = 0 or V+ Full -1 - 1 μA CIN Input Current IINL or IINH V Dynamic Characteristics Break-Before-Make Time e, d tBBM Enable Turn-On Time e, d tON(EN) Enable Turn-Off Time e, d tOFF(EN) V+ = 3 V, VD1/2 ± = 1.5 V, RL = 50 Ω, CL = 35 pF Room - 5 - Full - 5 - Room - - 30 Full - - 30 Room - - 25 Full - - 25 Charge Injection d QINJ CL = 1 nF, RGEN = 0 Ω, VGEN = 0 V - 0.5 - Off-Isolation d OIRR -30 - Crosstalk d XTALK V+ = 3 V to 3.6 V, RL = 50 Ω, CL = 5 pF, f = 240 MHz - -49 - Bandwidth d BW - 620 - - 4 - - 4 - - 5.6 - Channel-Off Capacitance d Channel-On Capacitance d V+ = 3 V to 3.6 V, RL = 50 Ω, CL = 5 pF, -3 dB CD1± (off) CD2± (off) CD± (off) V+ = 3.3 V, f = 1 MHz Room ns pC dB MHz pF CD± (on) - 11 - Channel-to-Channel Skew d tSK(O) - 50 - Skew Off Opposite Transitions of the Same Output d tSK(p) - 20 - - 200 - 2.6 - 4.3 V - - 2 μA Total Jitter d V+ = 3 V to 3.6 V, RL = 50 Ω, CL = 5 pF tJ ps Power Supply Power Supply Range V+ Power Supply Current I+ VIN = 0 V, or V+ Full Notes a. Room = 25 °C, Full = as determined by the operating suffix. b. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet. c. Typical values are for design aid only, not guaranteed nor subject to production testing. d. Guarantee by design, not subjected to production test. e. VIN = input voltage to perform proper function. f. Crosstalk measured between channels Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S14-2383-Rev. E, 15-Dec-14 Document Number: 74593 3 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 DG2720 www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 25 T = 25 °C ION = 8 mA D1± V+ = 2.6 V V+ = 2.6 V, ION = 8 mA + 85 °C V+ = 3.0 V 20 RON - On-Resistance () RON - On-Resistance () 18 17 16 15 14 13 12 11 10 9 8 7 6 5 4 3 2 V+ = 3.6 V V+ = 4.3 V + 25 °C - 40 °C 15 10 5 0 0 0.5 1 1.5 2 2.5 3 3.5 VD - Analog Voltage (V) 4 4.5 0 5 On-Resistance vs. VD and Single Supply Voltage 0.5 1 1.5 2 VD - Analog Voltage (V) 25 V+ = 3.6 V, ION = 8 mA V+ = 3.0 V, ION = 8 mA 20 RON - On-Resistance () 20 RON - On-Resistance () 3 On-Resistance vs. Analog Voltage and Temperature 25 + 85 °C 15 + 25 °C - 40 °C 10 + 85 °C + 25 °C 15 - 40 °C 10 5 5 0 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 VD - Analog Voltage (V) 3.5 4.0 0 On-Resistance vs. Analog Voltage and Temperature 0.5 1 1.5 2 VD - Analog Voltage (V) 2.5 3 On-Resistance vs. Analog Voltage and Temperature 10000 10 mA V+ = 4.3 V 1 mA V+ = 4.3 V 1000 Leakage Current (pA) 100 µA I+ - Supply Current (A) 2.5 V+ = 3.6 V 10 µA V+ = 3.0 V 1 µA V+ = 2.6 V 100 nA ID±(off) 100 ID±(on) IDx±(off) 10 10 nA 1 nA 100 pA 10 100 1K 10K 100K 1M Input Switching Frequency (Hz) Supply Current vs. Input Switching Frequency S14-2383-Rev. E, 15-Dec-14 10M 1 - 60 - 40 - 20 0 20 40 60 80 Temperature (°C) 100 120 140 Leakage Current vs. Temperature Document Number: 74593 4 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 DG2720 www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 0 0 - 10 -1 - 20 -2 Off Isolation (dB) - 30 Gain (dB) -3 -4 -5 - 40 - 50 - 60 - 70 -6 - 80 -7 - 90 - 100 -8 1 10 100 Frequency (MHz) 1000 10000 1 10 Gain vs. Frequency, CL = 5 pF, V+ = 3.3 V 100 Frequency (MHz) 1000 OFF Isolation, V+ = 3.3 V 0 - 10 - 20 Crosstalk (dB) - 30 - 40 - 50 - 60 - 70 - 80 - 90 - 100 1 10 100 Frequency (MHz) 1000 Crosstalk, V+ = 3.3 V TEST CIRCUITS V+ Logic Input Switch Input Logic Input HSD1± or HSD2± V+ 50 % tr < 5 ns tf < 5 ns VINL Switch Output D± VINH VOUT 0.9 x V OUT OE RL 50 Ω S GND CL 35 pF Switch Output 0V tON tOFF 0V Logic "1" = Switch On Logic input waveforms inverted for switches that have the opposite logic sense. CL (includes fixture and stray capacitance) VOUT = D± (R L RL + R ON ) Fig. 1 - Switching Time S14-2383-Rev. E, 15-Dec-14 Document Number: 74593 5 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 DG2720 www.vishay.com Vishay Siliconix TEST CIRCUITS V+ Logic Input V+ VHSD1± VHSD2± D± HSD1± VINH tr < 5 ns tf < 5 ns VINL VO HSD2± RL 50 Ω OE GND CL 35 pF S VNC = V NO VO 90 % Switch 0V Output tD tD CL (includes fixture and stray capacitance) Fig. 2 - Break-Before-Make Interval V+ VOUT V+ HSD1± or HSD2± Rgen VOUT D± VOUT + IN OE Vgen CL = 1 nF VIN = 0 - V+ GND On On Off S Q= OUT x CL IN depends on switch configuration: input polarity determined by sense of switch. Fig. 3 - Charge Injection V+ V+ 10 nF 10 nF V+ V+ HSD1± or HSD2± OE D± 0 V, 2.4 V Meter D± OE 0 V, 2.4 V RL GND HSD1± or HSD2± S S HP4192A Impedance Analyzer or Equivalent GND f = 1 MHz Analyzer VD± Off Isolation = 20 log V HSD2± or HSD1± Fig. 4 - Off-Isolation Fig. 5 - Channel Off/On Capacitance Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?74593. S14-2383-Rev. E, 15-Dec-14 Document Number: 74593 6 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information www.vishay.com Vishay Siliconix MINI QFN-10L CASE OUTLINE DIM MILLIMETERS INCHES MIN. NAM. MAX. MIN. NAM. MAX. A 0.45 0.55 0.60 0.0177 0.0217 0.0236 A1 0.00 - 0.05 0.000 - 0.002 b 0.15 0.20 0.25 0.006 0.008 0.010 0.150 or 0.127 REF (1) c 0.006 or 0.005 REF (1) D 1.70 1.80 1.90 0.067 0.071 0.075 E 1.30 1.40 1.50 0.051 0.055 0.059 e 0.40 BSC 0.016 BSC L 0.35 0.40 0.45 0.014 0.016 0.018 L1 0.45 0.50 0.55 0.0177 0.0197 0.0217 Note (1) The dimension depends on the leadframe that assembly house used. ECN T16-0163-Rev. B, 16-May-16 DWG: 5957 Revision: 16-May-16 1 Document Number: 74496 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 PAD Pattern Vishay Siliconix RECOMMENDED MINIMUM PADS FOR MINI QFN 10L 1.700 (0.0669) 9x 0.563 (0.0221) 0.663 (0.0261) 0.200 (0.0079) 1 2.100 (0.0827) 0.400 (0.0157) Pitch 10 x 0.225 (0.0089) Mounting Footprint Dimensions in mm (inch) Document Number: 66554 Revision: 05-Mar-10 www.vishay.com 1 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU. Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000