DG2723 www.vishay.com Vishay Siliconix 700 MHz, -3 dB Bandwidth; Dual SPDT Analog Switch DESCRIPTION FEATURES DG2723 is a low RON, high bandwidth analog switch configured in dual SPDT. It achieves 5.5 Ω switch on resistance, greater than 700 MHz -3 dB bandwidth with 5 pF load, and a channel to channel crosstalk at -36 dB and isolation at -29 dB. Fabricated with high density sub micro CMOS process, the DG2723 provides low parasitic capacitance, handles bidirectional signal flow with minimized phase distortion. Guaranteed 1.3 V logic high threshold makes it possible to interface directly with low voltage MCUs. The DG2723 is designed for a wide range of operating voltages from 2.7 V to 5.5 V that can be driven directly from one cell Li-ion battery. On-chip protection circuit protects again fault events when signals at “com” pins goes beyond V+. Latch up current is 500 mA, as per JESD78, and its ESD tolerance exceeds 5 kV. Packaged in ultra small miniQFN-10 (1.4 mm x 1.8 mm x 0.55 mm), it is ideal for portable high speed mix signal switching application. As a committed partner to the community and the environment, Vishay Siliconix manufactures this product with lead (Pb)-free device termination. The miniQFN-10 package has a nickel-palladium-gold device termination and is represented by the lead (Pb)-free “-E4” suffix to the ordering part number. The nickel-palladium-gold device terminations meet all JEDEC® standards for reflow and MSL rating. As a further sign of Vishay Siliconix's commitment, the DG2723 is fully RoHS complaint. • Wide operation voltage range • Low on-resistance, 5.5 Ω (typical at 3 V) • Low capacitance, 5.6 pF (typical) • -3 dB high bandwidth with 5pF load: 700 MHz (typical) • Low bit to bit skew: 40 pS (typical) • Low power consumption • Low logic threshold: V • Power down protection: D+/D- pins can tolerate up to 5.5 V when V+ = 0 V • Logic (S+ and S-) above V+ tolerance • 5 kV ESD protection (HBM) • Latch-up current 500 mA per JESD78 • Lead (Pb)-free low profile miniQFN-10 (1.4 mm x 1.8 mm x 0.55 mm) • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • Cellular phones • Portable media players • PDA • Digital camera • GPS • Notebook computer • TV, monitor, and set top box FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION HSD1+ HSD1- miniQFN-10L 7 6 S+ 18 2 5 HSD2+ V+ 9 4 HSD2- S- 10 3 GND 1 2 Pin 1 D+ D- Pin 1: LONG LEAD Tx Device marking: Tx for DG2723 x = Date/Lot traceability code Top View S14-2470-Rev. D, 22-Dec-14 Document Number: 68767 1 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 DG2723 www.vishay.com Vishay Siliconix ORDERING INFORMATION TEMP. RANGE PACKAGE PART NUMBER -40 °C to 85 °C miniQFN-10 DG2723DN-T1-E4 TRUTH TABLE PIN DESCRIPTIONS S+ (PIN 8) S- (PIN 10) FUNCTION PIN NAME DESCRIPTION X 0 D- = HSD1- S+ Select Input for D+ X 1 D- = HSD2- S- Select Input for D- 0 X D+ = HSD1+ HSD±, HSD2±, D± Data Port 1 X D+ = HSD2+ ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAMETER LIMIT V+ Reference to GND S+, S-, D±, HSD1±, HSD2± a Current (Any Terminal except S+, S-, D±, HSD1±, HSD2±) V -0.3 to (V+ + 0.3) 30 Continuous Current (S+, S-, D±, HSD1±, HSD2±) ± 250 Peak Current (Pulsed at 1 ms, 10 % Duty Cycle) ± 500 Storage Temperature (D Suffix) Power Dissipation (Packages) b UNIT -0.3 to 6 miniQFN-10 c mA -65 to 150 °C 208 mW ESD (Human Body Model) 5 kV Latch-up (Current Injection) 500 mA Notes a. Signals on S+, S-, D±, HSD1±, HSD2± exceeding V+ will be clamped by internal diodes. Limit forward diode current to maximum current ratings. b. All leads welded or soldered to PC board. c. Derate 2.6 mW/°C above 70 °C. SPECIFICATIONS (V+ = 3 V) PARAMETER SYMBOL TEST CONDITIONS OTHERWISE UNLESS SPECIFIED LIMITS -40 °C to 85 °C TEMP.a UNIT MIN. b TYP. c MAX. b Analog Switch Analog Signal Range d VANALOG RDS(on) Full 0 - V+ Room - 5.5 8 V On-Resistance RDS(on) V+ = 3 V, ID± = 8 mA, VHSD1/2± = 0.4 V Full - - 9 On-Resistance Match d ΔRON V+ = 3 V, ID± = 8 mA, VHSD1/2± = 0.4 V Room - 0.8 - On-Resistance Resistance Flatness d RON Flatness V+ = 3 V, ID± = 8 mA, VHSD1/2± = 0 V, 1 V Room - 2 - Switch Off Leakage Current I(off) V+ = 4.3 V, VHSD1/2± = 0.3 V, 3 V, VD± = 3 V, 0.3 V Full -100 - 100 Channel On Leakage Current I(on) V+ = 4.3 V, VHSD1/2± = 0.3 V, 4 V, VD± = 4 V, 0.3 V Full -200 - 200 V+ = 3 V to 3.6 V Full 1.3 - - V+ = 4.3 V Full 1.5 - - V+ = 3 V to 4.3 V Full - - 0.5 Full - 6.5 - pF VIN = 0 or V+ Full -1 - 1 μA Ω nA Digital Control Input Voltage High VINH Input Voltage Low VINL Input Capacitance Input Current S14-2470-Rev. D, 22-Dec-14 CIN IINL or IINH V Document Number: 68767 2 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 DG2723 www.vishay.com Vishay Siliconix SPECIFICATIONS (V+ = 3 V) PARAMETER SYMBOL TEST CONDITIONS OTHERWISE UNLESS SPECIFIED LIMITS -40 °C to 85 °C TEMP.a UNIT MIN. b TYP. c MAX. b Dynamic Characteristics Break-Before-Make Time e, d tBBM S-, S+ Turn-On Time e, d tON S-, S+ Turn-Off Time e, d tOFF Room Full V+ = 3 V, VD1/2± = 1.5 V, RL = 50 Ω, CL = 35 pF Room Full Room Full - 5 - - - 30 - - 25 Charge Injection d QINJ CL = 1 nF, RGEN = 0 Ω, VGEN = 0 V - 3 - Off-Isolation d OIRR -29 - Crosstalk d XTALK V+ = 3 V to 3.6 V, RL = 50 Ω, CL = 5 pF, f = 240 MHz - -36 - BW V+ = 3 V to 3.6 V, CL = 5 pF, RL = 50 Ω, -3 dB - 700 - - 2.5 - - 2.5 - - 2.5 - Bandwidth d Channel-Off Capacitance d Channel-On Capacitance d CD1± (off) CD2± (off) CD± (off) V+ = 3.3 V, f = 1 MHz Room ns pC dB MHz pF CD± (on) - 6.5 - Channel-to-Channel Skew d tSK(O) - 50 - Skew Off Opposite Transitions of the Same Output d tSK(p) - 20 - - 200 - 2.6 - 5.5 V - - 2 μA Total Jitter d V+ = 3 V to 3.6 V, RL = 50 Ω, CL = 5 pF tJ ps Power Supply Power Supply Range V+ Power Supply Current I+ VIN = 0 V, or V+ Full Notes a. Room = 25 °C, Full = as determined by the operating suffix. b. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this datasheet. c. Typical values are for design aid only, not guaranteed nor subject to production testing. d. Guarantee by design, not subjected to production test. e. VIN = input voltage to perform proper function. f. Crosstalk measured between channels. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S14-2470-Rev. D, 22-Dec-14 Document Number: 68767 3 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 DG2723 www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 24 26 20 V+ = 3.0 V 18 24 20 V+ = 3.3 V 16 V+ = 3.6 V 14 V+ = 4.3 V 12 10 V+ = 2.6 V 22 RON - On-Resistance (Ω) RON - On-Resistance (Ω) T = 25 °C IS = 8 mA D1± V+ = 2.6 V 22 V+ = 5.5 V 8 6 18 14 12 8 6 4 2 2 0 0.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 +25 °C +85 °C 10 4 0 -40 °C 16 0.5 1.0 2.5 3.0 RON vs. Analog Voltage and Temperature RON vs. VD and Single Supply Voltage 20 22 V+ = 3.0 V 20 V+ = 3.3 V 18 18 16 16 RON - On-Resistance (Ω) RON - On-Resistance (Ω) 2.0 VD - Analog Voltage (V) VD - Analog Voltage (V) -40 °C 14 +25 °C 12 +85 °C 10 8 6 14 -40 °C 12 +25 °C +85 °C 10 8 6 4 4 2 2 0 0 0.0 0.5 1.0 1.5 2.0 2.5 0.0 3.0 0.5 1.0 1.5 2.0 2.5 3.0 VD - Analog Voltage (V) VD - Analog Voltage (V) RON vs. Analog Voltage and Temperature RON vs. Analog Voltage and Temperature 18 3.5 16 V+ = 3.6 V V+ = 4.3 V 16 14 12 RON - On-Resistance (Ω) 14 RON - On-Resistance (Ω) 1.5 -40 °C +25 °C 10 +85 °C 8 6 4 12 10 -40 °C +25 °C 8 +25 °C 6 4 2 2 0 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 VD - Analog Voltage (V) VD - Analog Voltage (V) RON vs. Analog Voltage and Temperature RON vs. Analog Voltage and Temperature S14-2470-Rev. D, 22-Dec-14 4.5 Document Number: 68767 4 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 DG2723 www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS(TA = 25 °C, unless otherwise noted) 10 000 10 000 V+ = 4.3 V ID±(ON) V+ = 2.6 V, 3.0 V, 3.3V, 3.6V & 4.3 V 100 Leakage Current (pA) I+ - Supply Current (µA) 1000 10 1 0.1 0.01 1000 ID±(OFF) 100 10 0.001 IHSD1/2± (OFF) 0.0001 0.00001 10 100 1K 10K 100K 1M 1 - 40 10M 0 40 60 80 Supply Current vs. Input Switching Frequency Leakage Current vs. Temperature 100 0 -1 1.4 -2 1.3 -3 Gain (dB) VIH 1.2 1.1 VIL 1.0 -4 -5 -6 0.9 -7 0.8 -8 2.5 3 3.5 4 4.5 5 5.5 1M 10M V+ - Supply Voltage (V) 0 - 10 - 10 - 20 - 20 - 30 - 30 Cross Talk (dB) 10 0 - 40 - 50 - 60 - 50 - 60 - 70 - 80 - 80 - 90 - 90 - 100 - 100 100M Frequency (Hz) 1G Off-Isolation, V+ = 3.3 V S14-2470-Rev. D, 22-Dec-14 10G - 40 - 70 10M 1G Gain vs. Frequency, V+ = 3.3 V 10 1M 100M Frequency (Hz) Switching Threshold vs. Supply Voltage Off Isolation (dB) 20 Temperature (°C) 1.5 VT - Switching Threshold (V) - 20 Input Switching Frequency (Hz) 10G 1M 10M 100M Frequency (Hz) 1G 10G Crosstalk, V+ = 3.3 V Document Number: 68767 5 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 DG2723 www.vishay.com Vishay Siliconix TEST CIRCUITS V+ VINH Logic Input HSD1± or HSD2± Switch Input V+ VINL Switch Output D± tr < 5 ns tf < 5 ns 50 % VOUT 0.9 x V OUT Logic Input S± CL 35 pF RL 50 Ω GND Switch Output 0V tOFF tON Logic "1" = Switch on Logic input waveforms inverted for switches that have the opposite logic sense. CL (includes fixture and stray capacitance) VOUT = D± (R L RL + R ON ) Fig. 1 - Switching Time V+ Logic Input V+ D± HSD1± VHSD1± VINH tr < 5 ns tf < 5 ns VINL VO HSD2± VHSD2± RL 50 Ω S± CL 35 pF HSD1± = HSD2± 90 % VO GND Switch 0V Output tD tD CL (includes fixture and stray capacitance) Fig. 2 - Break-Before-Make Interval V+ Rgen V+ HSD1± or HSD2± VOUT D± VOUT VOUT + IN S± Vgen CL = 1 nF VIN = 0 - V+ On On Off GND Q= OUT x CL IN depends on switch configuration: input polarity determined by sense of switch. Fig. 3 - Charge Injection S14-2470-Rev. D, 22-Dec-14 Document Number: 68767 6 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 DG2723 www.vishay.com Vishay Siliconix TEST CIRCUITS V+ V+ 10 nF 10 nF V+ V+ HSD1± or HSD2± S± D± 0 V, 2.4 V Meter D± S± 0 V, 2.4 V RL HSD1± or HSD2± GND HP4192A Impedance Analyzer or Equivalent GND f = 1 MHz Analyzer VD± Off Isolation = 20 log V HSD2± or HSD1± Fig. 4 - Off-Isolation Fig. 5 - Channel Off/On Capacitance Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?68767. S14-2470-Rev. D, 22-Dec-14 Document Number: 68767 7 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information www.vishay.com Vishay Siliconix MINI QFN-10L CASE OUTLINE DIM MILLIMETERS INCHES MIN. NAM. MAX. MIN. NAM. MAX. A 0.45 0.55 0.60 0.0177 0.0217 0.0236 A1 0.00 - 0.05 0.000 - 0.002 b 0.15 0.20 0.25 0.006 0.008 0.010 0.150 or 0.127 REF (1) c 0.006 or 0.005 REF (1) D 1.70 1.80 1.90 0.067 0.071 0.075 E 1.30 1.40 1.50 0.051 0.055 0.059 e 0.40 BSC 0.016 BSC L 0.35 0.40 0.45 0.014 0.016 0.018 L1 0.45 0.50 0.55 0.0177 0.0197 0.0217 Note (1) The dimension depends on the leadframe that assembly house used. ECN T16-0163-Rev. B, 16-May-16 DWG: 5957 Revision: 16-May-16 1 Document Number: 74496 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 PAD Pattern Vishay Siliconix RECOMMENDED MINIMUM PADS FOR MINI QFN 10L 1.700 (0.0669) 9x 0.563 (0.0221) 0.663 (0.0261) 0.200 (0.0079) 1 2.100 (0.0827) 0.400 (0.0157) Pitch 10 x 0.225 (0.0089) Mounting Footprint Dimensions in mm (inch) Document Number: 66554 Revision: 05-Mar-10 www.vishay.com 1 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU. Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000