N-Channel Power MOSFET 60 V, 20 A, 39 m

NTD5867NL
N-Channel Power MOSFET
60 V, 20 A, 39 mW
Features
Low RDS(on)
High Current Capability
100% Avalanche Tested
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Symbol
Value
Unit
Drain−to−Source Voltage
VDSS
60
V
Gate−to−Source Voltage − Continuous
VGS
±20
V
Gate−to−Source Voltage
− Non−Repetitive (tp < 10 ms)
VGS
±30
V
Power Dissipation
(RqJC)
39 mW @ 10 V
20 A
50 mW @ 4.5 V
18 A
D
N−Channel
G
TC = 25°C
Steady
State
Pulsed Drain Current
ID MAX
ID
TC = 100°C
TC = 25°C
tp = 10 ms
Operating Junction and Storage Temperature
Source Current (Body Diode)
Single Pulse Drain−to−Source Avalanche
Energy (VDD = 50 V, VGS = 10 V, RG = 25 W,
IL(pk) = 19 A, L = 0.1 mH, TJ = 25°C)
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
A
20
S
13
PD
36
W
IDM
76
A
TJ, Tstg
−55 to
150
°C
IS
20
A
EAS
18
mJ
TL
260
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
4
1
1 2
3
DPAK
CASE 369AA
(Surface Mount)
STYLE 2
Symbol
Value
Unit
Junction−to−Case (Drain)
RqJC
3.5
°C/W
Junction−to−Ambient − Steady State (Note 1)
RqJA
45
1. Surface−mounted on FR4 board using 1 in sq pad size
(Cu area = 1.127 in sq [2 oz] including traces.
2
3
IPAK
CASE 369D
(Straight Lead)
STYLE 2
MARKING DIAGRAMS
& PIN ASSIGNMENT
4
Drain
4
Drain
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
4
AYWW
58
67NLG
Continuous Drain
Current (RqJC)
RDS(on) MAX
V(BR)DSS
60 V
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
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AYWW
58
67NLG
•
•
•
•
2
1 Drain 3
Gate Source
1 2 3
Gate Drain Source
A
= Assembly Location*
Y
= Year
WW
= Work Week
5867NL = Device Code
G
= Pb−Free Package
* The Assembly Location code (A) is front side
optional. In cases where the Assembly Location is
stamped in the package, the front side assembly
code may be blank.
ORDERING INFORMATION
See detailed ordering and shipping information on page 5 of
this data sheet.
© Semiconductor Components Industries, LLC, 2014
September, 2014 − Rev. 3
1
Publication Order Number:
NTD5867NL/D
NTD5867NL
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Symbol
Test Condition
Min
Drain−to−Source Breakdown Voltage
V(BR)DSS
VGS = 0 V, ID = 250 mA
60
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS/TJ
Parameter
Typ
Max
Unit
OFF CHARACTERISTICS
Zero Gate Voltage Drain Current
Gate−to−Source Leakage Current
IDSS
V
60
VGS = 0 V,
VDS = 60 V
mV/°C
TJ = 25°C
1.0
TJ = 125°C
100
IGSS
VDS = 0 V, VGS = ±20 V
VGS(TH)
VGS = VDS, ID = 250 mA
mA
±100
nA
2.5
V
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
Negative Threshold Temperature Coefficient
Drain−to−Source On Resistance
Forward Transconductance
VGS(TH)/TJ
RDS(on)
gFS
1.5
1.8
5.2
mV/°C
mW
VGS = 10 V, ID = 10 A
26
39
VGS = 4.5 V, ID = 10 A
33
50
VDS = 15 V, ID = 10 A
8.0
S
675
pF
CHARGES, CAPACITANCES AND GATE RESISTANCES
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
VGS = 0 V, f = 1.0 MHz,
VDS = 25 V
68
47
Total Gate Charge
QG(TOT)
15
Threshold Gate Charge
QG(TH)
1.0
Gate−to−Source Charge
QGS
Gate−to−Drain Charge
Total Gate Charge
Gate Resistance
VGS = 10 V, VDS = 48 V,
ID = 20 A
QGD
nC
2.2
4.3
QG(TOT)
VGS = 4.5 V, VDS = 48 V,
ID = 20 A
7.6
nC
RG
1.3
W
td(on)
6.5
ns
SWITCHING CHARACTERISTICS (Note 3)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
tr
td(off)
VGS = 10 V, VDD = 48 V,
ID = 20 A, RG = 2.5 W
tf
12.6
18.2
2.4
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
Reverse Recovery Time
VSD
TJ = 25°C
0.87
TJ = 100°C
0.78
tRR
Charge Time
ta
Discharge Time
tb
Reverse Recovery Charge
VGS = 0 V,
IS = 10 A
17
VGS = 0 V, dIs/dt = 100 A/ms,
IS = 20 A
QRR
1.2
V
ns
13
4.0
12
nC
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
3. Switching characteristics are independent of operating junction temperatures.
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2
NTD5867NL
TYPICAL PERFORMANCE CURVES
40
40
4.5 V
ID, DRAIN CURRENT (AMPS)
35
4V
30
3.8 V
25
3.6 V
20
3.4 V
15
3.2 V
10
3.0 V
5
2.8 V
0
1
2
3
4
15
TJ = 125°C
10
TJ = 25°C
5
TJ = −55°C
2
3
4
5
Figure 2. Transfer Characteristics
0.040
0.030
5
4
7
6
8
9
10
0.040
TJ = 25°C
0.035
VGS = 4.5 V
0.030
VGS = 10 V
0.025
0.020
5
10
15
20
VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
ID, DRAIN CURRENT (AMPS)
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
2.2
10000
VGS = 0 V
ID = 20 A
VGS = 10 V
1.8
IDSS, LEAKAGE (nA)
RDS(on), DRAIN−TO−SOURCE RESISTANCE
(NORMALIZED)
20
Figure 1. On−Region Characteristics
0.050
2.0
25
VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
ID = 20 A
TJ = 25°C
3
30
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
0.060
0.020
VDS ≥ 10 V
35
0
5
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
0
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
TJ = 25°C
ID, DRAIN CURRENT (AMPS)
10V
1.6
1.4
1.2
1.0
TJ = 150°C
1000
100
TJ = 125°C
0.8
0.6
−50
−25
0
25
50
75
100
125
150
10
10
20
30
40
50
TJ, JUNCTION TEMPERATURE (°C)
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Drain Voltage
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3
60
NTD5867NL
TYPICAL PERFORMANCE CURVES
VGS = 0 V
900
C, CAPACITANCE (pF)
VGS , GATE−TO−SOURCE VOLTAGE (VOLTS)
1000
TJ = 25°C
800
Ciss
700
600
500
400
300
200
Coss
100
0
0
Crss
10
20
30
40
50
60
DRAIN−TO−SOURCE VOLTAGE (VOLTS)
10
QT
8
VGS
6
Qgs
4
2
VDS = 48 V
ID = 20 A
TJ = 25°C
0
0
5
15
Figure 8. Gate−To−Source Voltage vs.
Total Charge
1000
20
100
tf
IS, SOURCE CURRENT (AMPS)
VDD = 48 V
ID = 20 A
VGS = 10 V
t, TIME (ns)
10
QG, TOTAL GATE CHARGE (nC)
Figure 7. Capacitance Variation
td(off)
tr
10
td(on)
1
1
10
RG, GATE RESISTANCE (OHMS)
VGS = 0 V
TJ = 25°C
15
10
5
0
0.5
100
100 ms
1 ms
10 ms
1
dc
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
0.1
1
10
100
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
EAS, SINGLE PULSE DRAIN−TO−SOURCE
AVALANCHE ENERGY (mJ)
10 ms
VGS = 10 V
SINGLE PULSE
TC = 25°C
0.7
0.8
0.9
1.0
Figure 10. Diode Forward Voltage vs. Current
100
10
0.6
VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
Figure 9. Resistive Switching Time
Variation vs. Gate Resistance
I D, DRAIN CURRENT (AMPS)
Qgd
20
ID = 20 A
15
10
5
0
25
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
50
75
100
125
TJ, JUNCTION TEMPERATURE (°C)
Figure 12. Maximum Avalanche Energy vs.
Starting Junction Temperature
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4
150
NTD5867NL
r(t), EFFECTIVE TRANSIENT THERMAL RESISTANCE
(NORMALIZED)
TYPICAL PERFORMANCE CURVES
10
1.0
D = 0.5
0.2
0.1
P(pk)
0.1
0.05
0.02
0.01
0.000001
t1
t2
DUTY CYCLE, D = t1/t2
0.01
SINGLE PULSE
0.00001
0.0001
t, TIME (s)
0.001
RqJC(t) = r(t) RqJC
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) − TC = P(pk) RqJC(t)
0.01
0.1
Figure 13. Thermal Response
ORDERING INFORMATION
Package
Shipping†
NTD5867NL−1G
IPAK (Straight Lead)
(Pb−Free)
75 Units / Rail
NTD5867NLT4G
DPAK
(Pb−Free)
2500 / Tape & Reel
Order Number
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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5
NTD5867NL
PACKAGE DIMENSIONS
DPAK (SINGLE GUAGE)
CASE 369AA
ISSUE B
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
2. CONTROLLING DIMENSION: INCHES.
3. THERMAL PAD CONTOUR OPTIONAL WITHIN DIMENSIONS b3, L3 and Z.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS, OR BURRS. MOLD
FLASH, PROTRUSIONS, OR GATE BURRS SHALL
NOT EXCEED 0.006 INCHES PER SIDE.
5. DIMENSIONS D AND E ARE DETERMINED AT THE
OUTERMOST EXTREMES OF THE PLASTIC BODY.
6. DATUMS A AND B ARE DETERMINED AT DATUM
PLANE H.
C
A
A
E
b3
c2
B
4
L3
Z
D
1
2
H
DETAIL A
3
DIM
A
A1
b
b2
b3
c
c2
D
E
e
H
L
L1
L2
L3
L4
Z
L4
b2
e
c
b
0.005 (0.13)
M
C
H
L2
GAUGE
PLANE
C
L
SEATING
PLANE
A1
L1
DETAIL A
ROTATED 905 CW
SOLDERING FOOTPRINT*
6.20
0.244
2.58
0.101
5.80
0.228
STYLE 2:
PIN 1. GATE
2. DRAIN
3. SOURCE
4. DRAIN
3.0
0.118
1.6
0.063
INCHES
MIN
MAX
0.086 0.094
0.000 0.005
0.025 0.035
0.030 0.045
0.180 0.215
0.018 0.024
0.018 0.024
0.235 0.245
0.250 0.265
0.090 BSC
0.370 0.410
0.055 0.070
0.108 REF
0.020 BSC
0.035 0.050
−−− 0.040
0.155
−−−
6.172
0.243
SCALE 3:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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6
MILLIMETERS
MIN
MAX
2.18
2.38
0.00
0.13
0.63
0.89
0.76
1.14
4.57
5.46
0.46
0.61
0.46
0.61
5.97
6.22
6.35
6.73
2.29 BSC
9.40 10.41
1.40
1.78
2.74 REF
0.51 BSC
0.89
1.27
−−−
1.01
3.93
−−−
NTD5867NL
PACKAGE DIMENSIONS
IPAK (STRAIGHT LEAD DPAK)
CASE 369D
ISSUE C
C
B
V
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
E
R
4
Z
A
S
1
2
3
−T−
SEATING
PLANE
K
J
F
H
D
G
DIM
A
B
C
D
E
F
G
H
J
K
R
S
V
Z
INCHES
MIN
MAX
0.235 0.245
0.250 0.265
0.086 0.094
0.027 0.035
0.018 0.023
0.037 0.045
0.090 BSC
0.034 0.040
0.018 0.023
0.350 0.380
0.180 0.215
0.025 0.040
0.035 0.050
0.155
−−−
MILLIMETERS
MIN
MAX
5.97
6.35
6.35
6.73
2.19
2.38
0.69
0.88
0.46
0.58
0.94
1.14
2.29 BSC
0.87
1.01
0.46
0.58
8.89
9.65
4.45
5.45
0.63
1.01
0.89
1.27
3.93
−−−
3 PL
0.13 (0.005)
M
STYLE 2:
PIN 1. GATE
2. DRAIN
3. SOURCE
4. DRAIN
T
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NTD5867NL/D