ONSEMI NDD04N50ZT4G

NDP04N50Z, NDD04N50Z
N-Channel Power MOSFET
500 V, 2.7 W
Features
•
•
•
•
Low ON Resistance
Low Gate Charge
100% Avalanche Tested
These Devices are Pb−Free and are RoHS Compliant
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ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Drain−to−Source Voltage
Symbol
NDP
NDD
VDSS
RDS(on) (MAX) @ 1.5 A
500 V
2.7 W
Unit
500
V
Continuous Drain Current RqJC
ID
3.4
3.0
A
Continuous Drain Current
RqJC, TA = 100°C
ID
2.1
1.9
A
Pulsed Drain Current, VGS @ 10 V
IDM
14
12
A
Power Dissipation RqJC
PD
75
61
W
Gate−to−Source Voltage
VGS
±30
V
Single Pulse Avalanche Energy,
ID = 3.4 A
EAS
120
mJ
ESD (HBM) (JESD22−A114)
Vesd
2800
V
Peak Diode Recovery
dv/dt
4.5 (Note 1)
V/ns
Continuous Source Current
(Body Diode)
IS
3.4
A
Maximum Temperature for Soldering
Leads
TL
260
°C
TJ, Tstg
−55 to 150
°C
Operating Junction and
Storage Temperature Range
VDSS
N−Channel
D (2)
G (1)
S (3)
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. ID v 3.4 A, di/dt ≤ 200 A/ms, VDD ≤ BVDSS, TJ ≤ 150°C.
4
4
1
2
3
TO−220AB
CASE 221A
STYLE 5
1
2
3
IPAK
CASE 369D
STYLE 2
1 2
3
DPAK
CASE 369AA
STYLE 2
MARKING AND ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
© Semiconductor Components Industries, LLC, 2010
July, 2010 − Rev. 0
1
Publication Order Number:
NDD04N50Z/D
NDP04N50Z, NDD04N50Z
THERMAL RESISTANCE
Parameter
Junction−to−Case (Drain)
Junction−to−Ambient Steady State
Symbol
Value
Unit
NDP04N50Z
NDD04N50Z
RqJC
1.6
2.0
°C/W
(Note 2) NDP04N50Z
(Note 3) NDD04N50Z
(Note 2) NDD04N50Z−1
RqJA
51
40
80
2. Insertion mounted
3. Surface mounted on FR4 board using 1″ sq. pad size, (Cu area = 1.127 in sq [2 oz] including traces).
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
Symbol
Test Conditions
Min
BVDSS
VGS = 0 V, ID = 1 mA
500
DBVDSS/
DTJ
Reference to 25°C,
ID = 1 mA
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Drain−to−Source Leakage Current
Gate−to−Source Forward Leakage
IDSS
VDS = 500 V, VGS = 0 V
IGSS
VGS = ±20 V
Static Drain−to−Source
On−Resistance
RDS(on)
VGS = 10 V, ID = 1.5 A
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = 50 mA
gFS
VDS = 15 V, ID = 1.5 A
V
0.6
V/°C
25°C
1
150°C
50
mA
±10
mA
2.7
W
4.5
V
ON CHARACTERISTICS (Note 4)
Forward Transconductance
2.3
3.0
2.1
S
308
pF
DYNAMIC CHARACTERISTICS
Input Capacitance
Ciss
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
9
Total Gate Charge
Qg
12
Gate−to−Source Charge
Qgs
Gate−to−Drain (“Miller”) Charge
Qgd
Plateau Voltage
VGP
6.6
V
Gate Resistance
Rg
5.4
W
9
ns
VDD = 250 V, ID = 3.4 A,
VGS = 10 V
43
nC
2.6
6.1
RESISTIVE SWITCHING CHARACTERISTICS
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
td(on)
tr
td(off)
VDD = 250 V, ID = 3.4 A,
VGS = 10 V, RG = 5 W
tf
9
16
10
SOURCE−DRAIN DIODE CHARACTERISTICS (TC = 25°C unless otherwise noted)
Diode Forward Voltage
VSD
Reverse Recovery Time
trr
Reverse Recovery Charge
Qrr
IS = 3.4 A, VGS = 0 V
VGS = 0 V, VDD = 30 V
IS = 3.4 A, di/dt = 100 A/ms
4. Pulse Width ≤ 380 ms, Duty Cycle ≤ 2%.
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2
1.6
V
240
ns
0.9
mC
NDP04N50Z, NDD04N50Z
4.0
4.0
ID, DRAIN CURRENT (A)
3.0
2.5
6.0 V
2.0
1.5
1.0
5.5 V
0.5
5.0
10.0
15.0
3.0
2.5
2.0
1.5
TJ = 25°C
1.0
TJ = 150°C
0.5
5.0 V
0.0
0.0
VDS = 25 V
3.5
ID, DRAIN CURRENT (A)
VGS = 10 V
3.5
6.5 V
7.0 V
20.0
0.0
25.0
3
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
6
7
8
9
10
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
Figure 2. Transfer Characteristics
4.00
ID = 1.5 A
TJ = 25°C
4.00
VGS = 10 V
TJ = 25°C
3.75
3.50
3.50
3.25
3.00
2.75
2.50
2.25
5.0
5.5
6.0
6.5
7.0
7.5
8.0
8.5
9.0
9.5
10.0
3.25
3.00
2.75
2.50
2.25
2.00
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
VGS, GATE−TO−SOURCE VOLTAGE (V)
ID, DRAIN CURRENT (A)
Figure 3. On−Region versus Gate−to−Source
Voltage
Figure 4. On−Resistance versus Drain
Current and Gate Voltage
BVDSS, NORMALIZED BREAKDOWN VOLTAGE (V)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
RDS(on), DRAIN−TO−SOURCE RESISTANCE
(NORMALIZED)
5
VGS, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
3.75
4
TJ = −55°C
2.50
2.25
ID = 1.5 A
VGS = 10 V
2.00
1.75
1.50
1.25
1.00
0.75
0.50
0.25
−50
−25
0
25
50
75
100
125
150
TJ, JUNCTION TEMPERATURE (°C)
1.15
ID = 1 mA
1.10
1.05
1.00
0.95
0.90
−50
Figure 5. On−Resistance Variation with
Temperature
−25
0
25
50
75
100
125
TJ, JUNCTION TEMPERATURE (°C)
Figure 6. BVDSS Variation with Temperature
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3
4.0
150
NDP04N50Z, NDD04N50Z
700
650
600
550
500
450
400
350
300
250
200
150
100
50
0
C, CAPACITANCE (pF)
TJ = 150°C
1.0
TJ = 125°C
0.1
0
50
100 150 200 250 300 350 400 450 500
Coss
Crss
0.01
0.1
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
VGS, GATE−TO−SOURCE VOLTAGE (V)
1
300
QT
10
250
VGS
VDS
QGD
200
QGS
150
6
100
4
VDS = 250 V
ID = 3.4 A
TJ = 25°C
2
0
1
2
3
4
100
Figure 8. Capacitance Variation
12
0
10
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 7. Drain−to−Source Leakage Current
versus Voltage
8
TJ = 25°C
VGS = 0 V
f = 1 MHz
Ciss
5
6
7
8
9
10
11
50
0
12
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
IDSS, LEAKAGE (mA)
10.0
Qg, TOTAL GATE CHARGE (nC)
Figure 9. Gate−to−Source Voltage and
Drain−to−Source Voltage versus Total Charge
1000
10.0
IS, SOURCE CURRENT (A)
VDD = 250 V
ID = 3.4 A
VGS = 10 V
t, TIME (ns)
100
td(off)
tr
tf
td(on)
10
1.0
TJ = 150°C
125°C
25°C
−55°C
1
1
10
0.1
0.3
100
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
RG, GATE RESISTANCE (W)
VSD, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 10. Resistive Switching Time Variation
versus Gate Resistance
Figure 11. Diode Forward Voltage versus
Current
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4
1.2
NDP04N50Z, NDD04N50Z
ID, DRAIN CURRENT (A)
100
10
VGS v 30 V
SINGLE PULSE
TC = 25°C
100 ms 10 ms
1 ms
10 ms
dc
1
0.1
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
0.01
0.1
1
10
100
1000
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 12. Maximum Rated Forward Biased
Safe Operating Area NDD04N50Z
10
R(t) (C/W)
1
50% (DUTY CYCLE)
20%
10%
5.0%
0.1
2.0%
1.0%
RqJA = 2°C/W
Steady State
SINGLE PULSE
0.01
1E−06
1E−05
1E−04
1E−03
1E−02
1E−01
PULSE TIME (s)
1E+00
1E+01
1E+02
1E+03
Figure 13. Thermal Impedance (Junction−to−Case) for NDD04N50Z
R(t) (C/W)
100
10 50% (DUTY CYCLE)
20%
10%
5.0%
1
2.0%
1.0%
0.1
0.01
1E−06
RqJA = 40°C/W
Steady State
SINGLE PULSE
1E−05
1E−04
1E−03
1E−02
1E−01
1E+00
1E+01
PULSE TIME (s)
Figure 14. Thermal Impedance (Junction−to−Ambient) for NDD04N50Z
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5
1E+02
1E+03
NDP04N50Z, NDD04N50Z
ORDERING INFORMATION
Package
Shipping†
NDP04N50ZG
TO−220AB
(Pb−Free)
50 Units / Rail
(In Development)
NDD04N50Z−1G
IPAK
(Pb−Free)
75 Units / Rail
NDD04N50ZT4G
DPAK
(Pb−Free)
2500 / Tape & Reel
Order Number
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
MARKING DIAGRAMS
NDP04N50ZG
AYWW
Gate
Source
1 2 3
Gate Drain Source
Drain
A
Y
WW
G
= Location Code
= Year
= Work Week
= Pb−Free Package
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6
4
Drain
YWW
4N
50ZG
YWW
4N
50ZG
4
Drain
2
1 Drain 3
Gate Source
NDP04N50Z, NDD04N50Z
PACKAGE DIMENSIONS
TO−220
CASE 221A−09
ISSUE AF
−T−
B
F
T
SEATING
PLANE
C
S
4
DIM
A
B
C
D
F
G
H
J
K
L
N
Q
R
S
T
U
V
Z
A
Q
U
1 2 3
H
K
Z
L
R
V
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
J
G
D
N
INCHES
MIN
MAX
0.570
0.620
0.380
0.405
0.160
0.190
0.025
0.035
0.142
0.161
0.095
0.105
0.110
0.155
0.014
0.025
0.500
0.562
0.045
0.060
0.190
0.210
0.100
0.120
0.080
0.110
0.045
0.055
0.235
0.255
0.000
0.050
0.045
----0.080
STYLE 5:
PIN 1.
2.
3.
4.
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7
GATE
DRAIN
SOURCE
DRAIN
MILLIMETERS
MIN
MAX
14.48
15.75
9.66
10.28
4.07
4.82
0.64
0.88
3.61
4.09
2.42
2.66
2.80
3.93
0.36
0.64
12.70
14.27
1.15
1.52
4.83
5.33
2.54
3.04
2.04
2.79
1.15
1.39
5.97
6.47
0.00
1.27
1.15
----2.04
NDP04N50Z, NDD04N50Z
PACKAGE DIMENSIONS
DPAK (SINGLE GUAGE)
CASE 369AA−01
ISSUE B
A
E
b3
c2
B
Z
D
1
L4
A
4
L3
b2
e
2
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
2. CONTROLLING DIMENSION: INCHES.
3. THERMAL PAD CONTOUR OPTIONAL WITHIN
DIMENSIONS b3, L3 and Z.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS, OR BURRS. MOLD
FLASH, PROTRUSIONS, OR GATE BURRS SHALL
NOT EXCEED 0.006 INCHES PER SIDE.
5. DIMENSIONS D AND E ARE DETERMINED AT THE
OUTERMOST EXTREMES OF THE PLASTIC BODY.
6. DATUMS A AND B ARE DETERMINED AT DATUM
PLANE H.
C
H
DETAIL A
3
DIM
A
A1
b
b2
b3
c
c2
D
E
e
H
L
L1
L2
L3
L4
Z
c
b
0.005 (0.13)
M
H
C
L2
GAUGE
PLANE
C
L
SEATING
PLANE
A1
L1
DETAIL A
ROTATED 905 CW
STYLE 2:
PIN 1. GATE
2. DRAIN
3. SOURCE
4. DRAIN
SOLDERING FOOTPRINT*
6.20
0.244
2.58
0.102
5.80
0.228
3.00
0.118
1.60
0.063
INCHES
MIN
MAX
0.086 0.094
0.000 0.005
0.025 0.035
0.030 0.045
0.180 0.215
0.018 0.024
0.018 0.024
0.235 0.245
0.250 0.265
0.090 BSC
0.370 0.410
0.055 0.070
0.108 REF
0.020 BSC
0.035 0.050
−−− 0.040
0.155
−−−
6.17
0.243
SCALE 3:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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8
MILLIMETERS
MIN
MAX
2.18
2.38
0.00
0.13
0.63
0.89
0.76
1.14
4.57
5.46
0.46
0.61
0.46
0.61
5.97
6.22
6.35
6.73
2.29 BSC
9.40 10.41
1.40
1.78
2.74 REF
0.51 BSC
0.89
1.27
−−−
1.01
3.93
−−−
NDP04N50Z, NDD04N50Z
PACKAGE DIMENSIONS
IPAK
CASE 369D−01
ISSUE B
C
B
V
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
E
R
4
Z
A
S
1
2
3
−T−
SEATING
PLANE
K
J
F
D
G
H
3 PL
0.13 (0.005)
M
DIM
A
B
C
D
E
F
G
H
J
K
R
S
V
Z
INCHES
MIN
MAX
0.235 0.245
0.250 0.265
0.086 0.094
0.027 0.035
0.018 0.023
0.037 0.045
0.090 BSC
0.034 0.040
0.018 0.023
0.350 0.380
0.180 0.215
0.025 0.040
0.035 0.050
0.155
−−−
MILLIMETERS
MIN
MAX
5.97
6.35
6.35
6.73
2.19
2.38
0.69
0.88
0.46
0.58
0.94
1.14
2.29 BSC
0.87
1.01
0.46
0.58
8.89
9.65
4.45
5.45
0.63
1.01
0.89
1.27
3.93
−−−
STYLE 2:
PIN 1. GATE
2. DRAIN
3. SOURCE
4. DRAIN
T
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For additional information, please contact your local
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NDD04N50Z/D