ONSEMI NTD4813N

NTD4813N
Power MOSFET
30 V, 40 A, Single N--Channel, DPAK/IPAK
Features
•
•
•
•
Low RDS(on) to Minimize Conduction Losses
Low Capacitance to Minimize Driver Losses
Optimized Gate Charge to Minimize Switching Losses
These are Pb--Free Devices
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V(BR)DSS
Applications
• CPU Power Delivery
• DC--DC Converters
• High Side Switching
RDS(ON) MAX
ID MAX
13 mΩ @ 10 V
30 V
40 A
24 mΩ @ 4.5 V
D
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Unit
30
V
VGS
±20
V
ID
9.0
A
Continuous Drain
Current RθJA
(Note 1)
TA = 25°C
Power Dissipation
RθJA (Note 1)
TA = 25°C
PD
1.94
W
Continuous Drain
Current RθJA
(Note 2)
TA = 25°C
ID
7.6
A
Power Dissipation
RθJA (Note 2)
TA = 85°C
Steady
State
Continuous Drain
Current RθJC
(Note 1)
TC = 25°C
Power Dissipation
RθJC (Note 1)
Pulsed Drain
Current
5.9
PD
Current Limited by Package
W
40
TC = 25°C
PD
35.3
W
TA = 25°C
IDM
90
A
TA = 25°C
IDmaxPkg
35
A
Operating Junction and Storage
Temperature
Source Current (Body Diode)
A
31
TJ,
TSTG
--55 to
+175
°C
IS
29
A
Drain to Source dV/dt
dV/dt
6
V/ns
Single Pulse Drain--to--Source Avalanche
Energy (VDD = 24 V, VGS = 10 V,
IL = 12 Apk, L = 1.0 mH, RG = 25 Ω)
EAS
72
mJ
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
TL
260
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
4
4
4
1 2
1.27
ID
TC = 85°C
tp=10ms
S
N--CHANNEL MOSFET
7.0
TA = 85°C
TA = 25°C
G
1
3
CASE 369AA
DPAK
(Bent Lead)
STYLE 2
2 3
1
2
3
CASE 369AC
CASE 369D
3 IPAK
IPAK
(Straight Lead) (Straight Lead
DPAK)
MARKING DIAGRAMS
& PIN ASSIGNMENTS
4
Drain
4
Drain
4
Drain
YWW
48
13NG
Value
VDSS
YWW
48
13NG
Gate--to--Source Voltage
Symbol
YWW
48
13NG
Parameter
Drain--to--Source Voltage
2
1 2 3
1 Drain 3
Gate Source Gate Drain Source 1 2 3
Gate Drain Source
Y
WW
4813N
G
= Year
= Work Week
= Device Code
= Pb--Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
© Semiconductor Components Industries, LLC, 2010
June, 2010 -- Rev. 6
1
Publication Order Number:
NTD4813N/D
NTD4813N
THERMAL RESISTANCE MAXIMUM RATINGS
Symbol
Value
Junction--to--Case (Drain)
Parameter
RθJC
4.25
Junction--to--TAB (Drain)
RθJC--TAB
3.5
Junction--to--Ambient – Steady State (Note 1)
RθJA
77.5
Junction--to--Ambient – Steady State (Note 2)
RθJA
118.5
Unit
°C/W
1. Surface--mounted on FR4 board using 1 sq--in pad, 1 oz Cu.
2. Surface--mounted on FR4 board using the minimum recommended pad size.
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Symbol
Test Condition
Min
Drain--to--Source Breakdown Voltage
V(BR)DSS
VGS = 0 V, ID = 250 mA
30
Drain--to--Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS/
TJ
Parameter
Typ
Max
Unit
OFF CHARACTERISTICS
Zero Gate Voltage Drain Current
Gate--to--Source Leakage Current
IDSS
V
24.5
VGS = 0 V,
VDS = 24 V
mV/°C
TJ = 25 °C
1
TJ = 125°C
10
IGSS
VDS = 0 V, VGS = ±20 V
VGS(TH)
VGS = VDS, ID = 250 mA
mA
±100
nA
2.5
V
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
Negative Threshold Temperature
Coefficient
VGS(TH)/TJ
Drain--to--Source On Resistance
RDS(on)
Forward Transconductance
1.5
5.4
VGS = 10 V to
11.5 V
ID = 30 A
10.9
ID = 15 A
10.3
VGS = 4.5 V
ID = 30 A
18.6
ID = 15 A
17.1
gFS
VDS = 15 V, ID = 10 A
mV/°C
13
24
6.0
mΩ
S
CHARGES AND CAPACITANCES
Input Capacitance
CISS
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
115
Total Gate Charge
QG(TOT)
6.9
Threshold Gate Charge
QG(TH)
Gate--to--Source Charge
QGS
Gate--to--Drain Charge
QGD
Total Gate Charge
QG(TOT)
860
VGS = 0 V, f = 1.0 MHz, VDS = 12 V
VGS = 4.5 V, VDS = 15 V; ID = 30 A
201
1.2
3.1
pF
7.9
nC
3.6
VGS = 11.5 V, VDS = 15 V;
ID = 30 A
15.6
nC
SWITCHING CHARACTERISTICS (Note 4)
Turn--On Delay Time
Rise Time
Turn--Off Delay Time
Fall Time
td(ON)
tr
td(OFF)
10.5
VGS = 4.5 V, VDS = 15 V, ID = 15 A,
RG = 3.0 Ω
tf
19.3
10.1
3.3
3. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2%.
4. Switching characteristics are independent of operating junction temperatures.
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2
ns
NTD4813N
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
SWITCHING CHARACTERISTICS (Note 4)
Turn--On Delay Time
Rise Time
Turn--Off Delay Time
Fall Time
td(ON)
tr
td(OFF)
6.0
VGS = 11.5 V, VDS = 15 V,
ID = 15 A, RG = 3.0 Ω
tf
18.3
ns
17.7
2.1
DRAIN--SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
Reverse Recovery Time
VSD
TJ = 25°C
0.8
TJ = 125°C
0.9
tRR
Charge Time
ta
Discharge Time
tb
Reverse Recovery Charge
VGS = 0 V,
IS = 30 A
1.2
V
16
VGS = 0 V, dIs/dt = 100 A/ms,
IS = 30 A
10
ns
5.6
QRR
7.0
nC
Source Inductance
LS
2.49
nH
Drain Inductance, DPAK
LD
0.0164
Drain Inductance, IPAK
LD
Gate Inductance
LG
3.46
Gate Resistance
RG
2.5
PACKAGE PARASITIC VALUES
TA = 25°C
3. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2%.
4. Switching characteristics are independent of operating junction temperatures.
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3
1.88
Ω
NTD4813N
TYPICAL PERFORMANCE CURVES
50
60
TJ = 25°C
4.5 V
VDS ≥ 10 V
40
4V
30
3.8 V
20
3.6 V
10
3V
0
0.030
0.029
0.028
0.027
0.026
0.025
0.024
0.023
0.022
0.021
0.020
0.019
0.018
0.017
0.016
0.015
0.014
0.013
0.012
0.011
0.010
1
2
3
40
30
20
TJ = 125°C
TJ = 25°C
10
0
5
4
50
TJ = --55°C
1
2
Figure 2. Transfer Characteristics
0.042
ID = 30 A
TJ = 25°C
TJ = 25°C
0.037
0.032
0.027
VGS = 4.5 V
0.022
0.017
VGS = 11.5 V
0.012
0.007
0.002
10
4 4.5 5 5.5 6 6.5 7 7.5 8 8.5 9 9.5 10 10.5 11 11.5
15
20
25
30
35
40
45
50
55
60
ID, DRAIN CURRENT (AMPS)
Figure 4. On--Resistance vs. Drain Current and
Gate Voltage
100,000
VGS = 0 V
ID = 30 A
VGS = 10 V
TJ = 150°C
10,000
IDSS, LEAKAGE (nA)
RDS(on), DRAIN--TO--SOURCE RESISTANCE
(NORMALIZED)
7
6
Figure 1. On--Region Characteristics
Figure 3. On--Resistance vs. Gate--to--Source
Voltage
1.6
1.5
5
VGS, GATE--TO--SOURCE VOLTAGE (VOLTS)
VGS, GATE--TO--SOURCE VOLTAGE (VOLTS)
1.8
1.7
4
3
VDS, DRAIN--TO--SOURCE VOLTAGE (VOLTS)
RDS(on), DRAIN--TO--SOURCE RESISTANCE (Ω)
0
RDS(on), DRAIN--TO--SOURCE RESISTANCE (Ω)
10 V
6V
5V
ID, DRAIN CURRENT (AMPS)
ID, DRAIN CURRENT (AMPS)
60
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
TJ = 125°C
1000
100
TJ = 25°C
0.6
--50 --25
10
0
25
50
75
100
125
150
175
5
10
15
20
25
TJ, JUNCTION TEMPERATURE (°C)
VDS, DRAIN--TO--SOURCE VOLTAGE (VOLTS)
Figure 5. On--Resistance Variation with
Temperature
Figure 6. Drain--to--Source Leakage Current
vs. Drain Voltage
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4
30
NTD4813N
TYPICAL PERFORMANCE CURVES
TJ = 25°C
900
C, CAPACITANCE (pF)
VGS , GATE--TO--SOURCE VOLTAGE (VOLTS)
1000
Ciss
800
700
600
500
400
300
Coss
200
100
0
Crss
5
0
10
15
20
25
VDS, DRAIN--TO--SOURCE VOLTAGE (VOLTS)
15
13.5
12
10.5
9
7.5
6
1.5
0
0
IS, SOURCE CURRENT (AMPS)
t, TIME (ns)
td(off)
10
td(on)
VDD = 15 V
ID = 30 A
VGS = 11.5 V
tf
2
3
4 5 6 7 8 9 10 11 12 13 14 15 16
QG, TOTAL GATE CHARGE (nC)
1
10
RG, GATE RESISTANCE (OHMS)
VGS = 0 V
25
15
10
5
0
0.5
100
10
1 ms
10 ms
dc
10
1
VDS, DRAIN--TO--SOURCE VOLTAGE (VOLTS)
100
EAS, SINGLE PULSE DRAIN--TO--SOURCE
AVALANCHE ENERGY (mJ)
100 ms
0.1
0.7
0.8
0.9
1.0
Figure 10. Diode Forward Voltage vs. Current
10 ms
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
0.6
VSD, SOURCE--TO--DRAIN VOLTAGE (VOLTS)
VGS = 20 V
SINGLE PULSE
TC = 25°C
100
TJ = 25°C
20
Figure 9. Resistive Switching Time
Variation vs. Gate Resistance
I D, DRAIN CURRENT (AMPS)
1
30
tr
1
ID = 30 A
VDD = 15 V
VGS = 11.5 V
TJ = 25°C
3
Figure 8. Gate--To--Source and Drain--To--Source
Voltage vs. Total Charge
100
1000
Q2
Q1
4.5
Figure 7. Capacitance Variation
1
QT
80
70
ID = 12 A
60
50
40
30
20
10
0
25
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
100
125
50
75
150
TJ, JUNCTION TEMPERATURE (°C)
Figure 12. Maximum Avalanche Energy vs.
Starting Junction Temperature
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5
175
NTD4813N
TYPICAL PERFORMANCE CURVES
I D, DRAIN CURRENT (AMPS)
100
10
25°C
100°C
125°C
1
0.1
10
100
PULSE WIDTH (ms)
1
1000
r(t), EFFECTIVE TRANSIENT THERMAL RESISTANCE
(NORMALIZED)
Figure 13. Avalanche Characteristics
1.0
D = 0.5
0.2
0.1
0.1
0.05
P(pk)
0.02
0.01
SINGLE PULSE
0.01
1.0E--05
1.0E--04
t1
t2
DUTY CYCLE, D = t1/t2
1.0E--03
1.0E--02
t, TIME (ms)
RθJC(t) = r(t) RθJC
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) -- TC = P(pk) RθJC(t)
1.0E--01
1.0E+00
1.0E+01
Figure 14. Thermal Response
ORDERING INFORMATION
Package
Shipping†
NTD4813NT4G
DPAK
(Pb--Free)
2500 / Tape & Reel
NTD4813N--1G
DPAK--3
(Pb--Free)
75 Units / Rail
NTD4813N--35G
IPAK Trimmed Lead
(3.5  0.15 mm)
(Pb--Free)
75 Units / Rail
Device
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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6
NTD4813N
PACKAGE DIMENSIONS
DPAK (SINGLE GUAGE)
CASE 369AA--01
ISSUE B
A
E
b3
c2
B
Z
D
1
L4
A
4
L3
b2
e
2
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
2. CONTROLLING DIMENSION: INCHES.
3. THERMAL PAD CONTOUR OPTIONAL WITHIN
DIMENSIONS b3, L3 and Z.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS, OR BURRS. MOLD
FLASH, PROTRUSIONS, OR GATE BURRS SHALL
NOT EXCEED 0.006 INCHES PER SIDE.
5. DIMENSIONS D AND E ARE DETERMINED AT THE
OUTERMOST EXTREMES OF THE PLASTIC BODY.
6. DATUMS A AND B ARE DETERMINED AT DATUM
PLANE H.
C
H
DETAIL A
3
DIM
A
A1
b
b2
b3
c
c2
D
E
e
H
L
L1
L2
L3
L4
Z
c
b
0.005 (0.13)
M
C
H
L2
GAUGE
PLANE
C
L
SEATING
PLANE
A1
L1
DETAIL A
ROTATED 90° CW
STYLE 2:
PIN 1. GATE
2. DRAIN
3. SOURCE
4. DRAIN
SOLDERING FOOTPRINT*
6.20
0.244
2.58
0.102
5.80
0.228
3.00
0.118
1.60
0.063
INCHES
MIN
MAX
0.086 0.094
0.000 0.005
0.025 0.035
0.030 0.045
0.180 0.215
0.018 0.024
0.018 0.024
0.235 0.245
0.250 0.265
0.090 BSC
0.370 0.410
0.055 0.070
0.108 REF
0.020 BSC
0.035 0.050
------ 0.040
0.155
------
6.17
0.243
SCALE 3:1
mm 
inches
*For additional information on our Pb--Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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7
MILLIMETERS
MIN
MAX
2.18
2.38
0.00
0.13
0.63
0.89
0.76
1.14
4.57
5.46
0.46
0.61
0.46
0.61
5.97
6.22
6.35
6.73
2.29 BSC
9.40 10.41
1.40
1.78
2.74 REF
0.51 BSC
0.89
1.27
-----1.01
3.93
------
NTD4813N
PACKAGE DIMENSIONS
3 IPAK, STRAIGHT LEAD
CASE 369AC--01
ISSUE O
B
V
NOTES:
1.. DIMENSIONING AND TOLERANCING
PER ANSI Y14.5M, 1982.
2.. CONTROLLING DIMENSION: INCH.
3. SEATING PLANE IS ON TOP OF
DAMBAR POSITION.
4. DIMENSION A DOES NOT INCLUDE
DAMBAR POSITION OR MOLD GATE.
C
E
R
DIM
A
B
C
D
E
F
G
H
J
K
R
V
W
A
SEATING PLANE
K
W
F
J
G
D
H
3 PL
0.13 (0.005) W
INCHES
MIN
MAX
0.235 0.245
0.250 0.265
0.086 0.094
0.027 0.035
0.018 0.023
0.037 0.043
0.090 BSC
0.034 0.040
0.018 0.023
0.134 0.142
0.180 0.215
0.035 0.050
0.000 0.010
MILLIMETERS
MIN
MAX
5.97
6.22
6.35
6.73
2.19
2.38
0.69
0.88
0.46
0.58
0.94
1.09
2.29 BSC
0.87
1.01
0.46
0.58
3.40
3.60
4.57
5.46
0.89
1.27
0.000
0.25
IPAK (STRAIGHT LEAD DPAK)
CASE 369D--01
ISSUE B
C
B
V
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
E
R
4
Z
A
S
1
2
3
--T-SEATING
PLANE
K
J
F
D
G
H
3 PL
0.13 (0.005)
M
DIM
A
B
C
D
E
F
G
H
J
K
R
S
V
Z
INCHES
MIN
MAX
0.235 0.245
0.250 0.265
0.086 0.094
0.027 0.035
0.018 0.023
0.037 0.045
0.090 BSC
0.034 0.040
0.018 0.023
0.350 0.380
0.180 0.215
0.025 0.040
0.035 0.050
0.155
------
MILLIMETERS
MIN
MAX
5.97
6.35
6.35
6.73
2.19
2.38
0.69
0.88
0.46
0.58
0.94
1.14
2.29 BSC
0.87
1.01
0.46
0.58
8.89
9.65
4.45
5.45
0.63
1.01
0.89
1.27
3.93
------
STYLE 2:
PIN 1. GATE
2. DRAIN
3. SOURCE
4. DRAIN
T
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8
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For additional information, please contact your local
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NTD4813N/D