MTP1N100E Designer’s™ Data Sheet TMOS E−FET.™ Power Field Effect Transistor High−Performance Silicon−Gate CMOS This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage−blocking capability without degrading performance over time. In addition, this advanced TMOS E−FET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain−to−source diode with a fast recovery time. Designed for high voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients. http://onsemi.com TMOS POWER FET 1.0 AMPERES, 1000 VOLTS RDS(on) = 9.0 W TO−220AB CASE 221A−06 Style 5 • Robust High Voltage Termination • Avalanche Energy Specified • Source−to−Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode D • Diode is Characterized for Use in Bridge Circuits • IDSS and VDS(on) Specified at Elevated Temperature ® G S MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Symbol Value Unit Drain−Source Voltage VDSS 1000 Vdc Drain−Gate Voltage (RGS = 1.0 MΩ) VDGR 1000 Vdc Gate−Source Voltage — Continuous Gate−Source Voltage — Non−Repetitive (tp ≤ 10 ms) VGS VGSM ± 20 ± 40 Vdc Vpk ID ID 1.0 0.8 3.0 Adc PD 75 0.6 Watts W/°C TJ, Tstg −55 to 150 °C Single Pulse Drain−to−Source Avalanche Energy — Starting TJ = 25°C (VDD = 100 Vdc, VGS = 10 Vdc, IL = 3.0 Apk, L = 10 mH, RG = 25 Ω) EAS 45 mJ Thermal Resistance — Junction to Case Thermal Resistance — Junction to Ambient RθJC RθJA 1.67 62.5 °C/W TL 260 °C Rating Drain Current — Continuous Drain Current — Continuous @ 100°C Drain Current — Single Pulse (tp ≤ 10 μs) IDM Total Power Dissipation Derate above 25°C Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 10 seconds Apk Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit curves — representing boundaries on device characteristics — are given to facilitate “worst case” design. Preferred devices are Motorola recommended choices for future use and best overall value. © Semiconductor Components Industries, LLC, 2006 August, 2006 − Rev. 3 1 Publication Order Number: MTP1N100E/D MTP1N100E ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit 1000 — — 1.251 — — Vdc mV/°C — — — — 10 100 — — 100 nAdc 2.0 — 3.0 6.0 4.0 — Vdc mV/°C — 6.7 9.0 Ohm — — 4.86 — 9.0 9.9 gFS 0.9 1.32 — mhos Ciss — 587 810 pF Coss — 59.6 120 Crss — 12.2 25 td(on) — 9.0 20 tr — 12 25 td(off) — 28 55 tf — 34 70 QT — 14.6 21 Q1 — 2.8 — Q2 — 6.8 — Q3 — 5.2 — — — 0.764 0.62 1.0 — trr — 655 — ta — 42 — tb — 613 — QRR — 0.957 — — 3.5 4.5 — — 7.5 — OFF CHARACTERISTICS Drain−Source Breakdown Voltage (VGS = 0 Vdc, ID = 250 μAdc) Temperature Coefficient (Positive) V(BR)DSS Zero Gate Voltage Drain Current (VDS = 1000 Vdc, VGS = 0 Vdc) (VDS = 1000 Vdc, VGS = 0 Vdc, TJ = 125°C) IDSS Gate−Body Leakage Current (VGS = ± 20 Vdc, VDS = 0) IGSS μAdc ON CHARACTERISTICS (1) Gate Threshold Voltage (VDS = VGS, ID = 250 μAdc) Temperature Coefficient (Negative) VGS(th) Static Drain−Source On−Resistance (VGS = 10 Vdc, ID = 0.5 Adc) RDS(on) Drain−Source On−Voltage (VGS = 10 Vdc) (ID = 1.0 Adc) (ID = 0.5 Adc, TJ = 125°C) VDS(on) Forward Transconductance (VDS = 15 Vdc, ID = 0.5 Adc) Vdc DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance (VDS = 25 Vdc, VGS = 0 Vdc, f = 1.0 MHz) Reverse Transfer Capacitance SWITCHING CHARACTERISTICS (2) Turn−On Delay Time Rise Time Turn−Off Delay Time (VDD = 500 Vdc, ID = 1.0 Adc, VGS = 10 Vdc, RG = 9.1 Ω) Fall Time Gate Charge (See Figure 8) (VDS = 400 Vdc, ID = 1.0 Adc, VGS = 10 Vdc) ns nC SOURCE−DRAIN DIODE CHARACTERISTICS Forward On−Voltage (1) Reverse Recovery Time (See Figure 14) (IS = 1.0 Adc, VGS = 0 Vdc) (IS = 1.0 Adc, VGS = 0 Vdc, TJ = 125°C) (IS = 1.0 Adc, VGS = 0 Vdc, dIS/dt = 100 A/μs) Reverse Recovery Stored Charge VSD Vdc ns μC INTERNAL PACKAGE INDUCTANCE Internal Drain Inductance (Measured from contact screw on tab to center of die) (Measured from the drain lead 0.25″ from package to center of die) LD Internal Source Inductance (Measured from the source lead 0.25″ from package to source bond pad) LS (1) Pulse Test: Pulse Width ≤ 300 μs, Duty Cycle ≤ 2%. (2) Switching characteristics are independent of operating junction temperature. http://onsemi.com 2 nH nH MTP1N100E TYPICAL ELECTRICAL CHARACTERISTICS 2.0 2.0 TJ = 25°C 1.4 5V 1.2 1.0 0.8 0.6 0.4 2 0 4 6 8 10 12 14 18 16 25°C 0.8 0.6 0.4 TJ = −55°C 2.4 2.8 3.2 3.6 4.0 4.4 4.8 5.2 Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics VGS = 10 V TJ = 100°C 10 8 25°C 6 4 − 55°C 2 0 1.0 VGS, GATE−TO−SOURCE VOLTAGE (VOLTS) 12 0 1.2 VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) 16 14 1.4 0 2.0 20 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 2.0 1.8 5 8.0 TJ = 25°C 7.8 7.6 7.4 7.2 7.0 VGS = 10 V 6.8 6.6 15 V 6.4 6.2 6.0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 ID, DRAIN CURRENT (AMPS) ID, DRAIN CURRENT (AMPS) Figure 3. On−Resistance versus Drain Current and Temperature Figure 4. On−Resistance versus Drain Current and Gate Voltage 10000 2.8 2.4 TJ = 125°C VGS = 10 V ID = 0.5 A 1000 100°C 2.0 I DSS , LEAKAGE (nA) RDS(on) , DRAIN−TO−SOURCE RESISTANCE (OHMS) 0 100°C 1.6 0.2 4V 0.2 RDS(on) , DRAIN−TO−SOURCE RESISTANCE (NORMALIZED) I D , DRAIN CURRENT (AMPS) 6V 1.6 VDS ≥ 10 V 1.8 VGS = 10 V RDS(on) , DRAIN−TO−SOURCE RESISTANCE (OHMS) I D , DRAIN CURRENT (AMPS) 1.8 1.6 1.2 0.8 10 1.0 25°C 0.1 0.4 0 −50 100 VGS = 0 V 0.01 −25 0 25 50 75 100 TJ, JUNCTION TEMPERATURE (°C) 125 0 150 Figure 5. On−Resistance Variation with Temperature 100 200 300 400 500 600 700 800 900 VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) Figure 6. Drain−To−Source Leakage Current versus Voltage http://onsemi.com 3 1 MTP1N100E POWER MOSFET SWITCHING Switching behavior is most easily modeled and predicted by recognizing that the power MOSFET is charge controlled. The lengths of various switching intervals (Δt) are determined by how fast the FET input capacitance can be charged by current from the generator. The capacitance (Ciss) is read from the capacitance curve at a voltage corresponding to the off−state condition when calculating td(on) and is read at a voltage corresponding to the on−state when calculating td(off). The published capacitance data is difficult to use for calculating rise and fall because drain−gate capacitance varies greatly with applied voltage. Accordingly, gate charge data is used. In most cases, a satisfactory estimate of average input current (I G(AV) ) can be made from a rudimentary analysis of the drive circuit so that At high switching speeds, parasitic circuit elements complicate the analysis. The inductance of the MOSFET source lead, inside the package and in the circuit wiring which is common to both the drain and gate current paths, produces a voltage at the source which reduces the gate drive current. The voltage is determined by Ldi/dt, but since di/dt is a function of drain current, the mathematical solution is complex. The MOSFET output capacitance also complicates the mathematics. And finally, MOSFETs have finite internal gate resistance which effectively adds to the resistance of the driving source, but the internal resistance is difficult to measure and, consequently, is not specified. The resistive switching time variation versus gate resistance (Figure 9) shows how typical switching performance is affected by the parasitic circuit elements. If the parasitics were not present, the slope of the curves would maintain a value of unity regardless of the switching speed. The circuit used to obtain the data is constructed to minimize common inductance in the drain and gate circuit loops and is believed readily achievable with board mounted components. Most power electronic loads are inductive; the data in the figure is taken with a resistive load, which approximates an optimally snubbed inductive load. Power MOSFETs may be safely operated into an inductive load; however, snubbing reduces switching losses. t = Q/IG(AV) During the rise and fall time interval when switching a resistive load, VGS remains virtually constant at a level known as the plateau voltage, VSGP. Therefore, rise and fall times may be approximated by the following: tr = Q2 x RG/(VGG − VGSP) tf = Q2 x RG/VGSP where VGG = the gate drive voltage, which varies from zero to VGG RG = the gate drive resistance and Q2 and VGSP are read from the gate charge curve. During the turn−on and turn−off delay times, gate current is not constant. The simplest calculation uses appropriate values from the capacitance curves in a standard equation for voltage change in an RC network. The equations are: td(on) = RG Ciss In [VGG/(VGG − VGSP)] td(off) = RG Ciss In (VGG/VGSP) 1200 Ciss VGS = 0 V VDS = 0 V 1000 TJ = 25°C VGS = 0 V C, CAPACITANCE (pF) C, CAPACITANCE (pF) 1000 800 Ciss 600 Crss 400 Ciss TJ = 25°C 100 Coss 10 Crss Coss 200 0 10 Crss 5 5 0 VGS 10 15 20 1 25 VDS GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS) 10 100 VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) Figure 7b. High Voltage Capacitance Variation Figure 7a. Capacitance Variation http://onsemi.com 4 10 12 1000 480 QT 10 VDS , DRAIN−TO−SOURCE VOLTAGE (VOLTS) VDD = 500 V ID = 1 A VGS = 10 V TJ = 25°C 400 8 320 VGS Q1 6 Q2 240 ID = 1 A TJ = 25°C 4 2 Q3 VDS 0 1 2 3 0 4 5 6 7 8 9 10 11 12 13 14 15 QG, TOTAL GATE CHARGE (nC) 100 tf td(off) tr td(on) 10 160 80 0 t, TIME (ns) VGS, GATE−TO−SOURCE VOLTAGE (VOLTS) MTP1N100E 1 1 Figure 8. Gate−To−Source and Drain−To−Source Voltage versus Total Charge 10 RG, GATE RESISTANCE (OHMS) Figure 9. Resistive Switching Time Variation versus Gate Resistance DRAIN−TO−SOURCE DIODE CHARACTERISTICS I S , SOURCE CURRENT (AMPS) 1.0 VGS = 0 V TJ = 25°C 0.8 0.6 0.4 0.2 0 0.50 0.54 0.58 0.62 0.66 0.70 0.74 0.78 VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS) Figure 10. Diode Forward Voltage versus Current SAFE OPERATING AREA reliable operation, the stored energy from circuit inductance dissipated in the transistor while in avalanche must be less than the rated limit and adjusted for operating conditions differing from those specified. Although industry practice is to rate in terms of energy, avalanche energy capability is not a constant. The energy rating decreases non−linearly with an increase of peak current in avalanche and peak junction temperature. Although many E−FETs can withstand the stress of drain−to−source avalanche at currents up to rated pulsed current (I DM ), the energy rating is specified at rated continuous current (ID), in accordance with industry custom. The energy rating must be derated for temperature as shown in the accompanying graph (Figure 12). Maximum energy at currents below rated continuous ID can safely be assumed to equal the values indicated. The Forward Biased Safe Operating Area curves define the maximum simultaneous drain−to−source voltage and drain current that a transistor can handle safely when it is forward biased. Curves are based upon maximum peak junction temperature and a case temperature (TC) of 25°C. Peak repetitive pulsed power limits are determined by using the thermal response data in conjunction with the procedures discussed in AN569, “Transient Thermal Resistance−General Data and Its Use.” Switching between the off−state and the on−state may traverse any load line provided neither rated peak current (I DM ) nor rated voltage (V DSS ) is exceeded and the transition time (tr,tf) do not exceed 10 μs. In addition the total power averaged over a complete switching cycle must not exceed (TJ(MAX) − TC)/(RθJC). A Power MOSFET designated E−FET can be safely used in switching circuits with unclamped inductive loads. For http://onsemi.com 5 MTP1N100E SAFE OPERATING AREA 50 VGS = 20 V SINGLE PULSE TC = 25°C 1.0 10μs 100μs 1ms 10ms 0.1 dc RDS(on) LIMIT THERMAL LIMIT PACKAGE LIMIT 0.01 10 1.0 100 VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) 0.1 ID = 1 A EAS, SINGLE PULSE DRAIN−TO−SOURCE AVALANCHE ENERGY (mJ) I D , DRAIN CURRENT (AMPS) 10 40 30 20 10 0 25 1000 Figure 11. Maximum Rated Forward Biased Safe Operating Area 50 75 100 125 TJ, STARTING JUNCTION TEMPERATURE (°C) Figure 12. Maximum Avalanche Energy versus Starting Junction Temperature r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 1.0 D = 0.5 0.2 0.1 0.1 P(pk) 0.05 0.02 t1 0.01 SINGLE PULSE 0.01 1.0E−05 t2 DUTY CYCLE, D = t1/t2 1.0E−04 1.0E−02 1.0E−03 1.0E−01 t, TIME (s) Figure 13. Thermal Response di/dt IS trr ta tb TIME 0.25 IS tp IS Figure 14. Diode Reverse Recovery Waveform http://onsemi.com 6 RθJC(t) = r(t) RθJC D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) − TC = P(pk) RθJC(t) 1.0E+00 1.0E+0 MTP1N100E PACKAGE DIMENSIONS CASE 221A−06 ISSUE Y −T− B F SEATING PLANE C T S 4 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. DIM A B C D F G H J K L N Q R S T U V Z A Q 1 2 3 U H K Z L R V J G D N INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.147 0.095 0.105 0.110 0.155 0.018 0.025 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 −−− −−− 0.080 STYLE 5: PIN 1. 2. 3. 4. MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 3.73 2.42 2.66 2.80 3.93 0.46 0.64 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 −−− −−− 2.04 GATE DRAIN SOURCE DRAIN E−FET and Designer’s are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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