Order this document by MTP40N10E/D SEMICONDUCTOR TECHNICAL DATA N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 40 AMPERES 100 VOLTS RDS(on) = 0.04 OHM This advanced TMOS E–FET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain–to–source diode with a fast recovery time. Designed for low voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients. • Avalanche Energy Specified • Source–to–Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode • Diode is Characterized for Use in Bridge Circuits • IDSS and VDS(on) Specified at Elevated Temperature N–Channel D G CASE 221A–06, Style 5 TO–220AB S MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Symbol Value Unit Drain–to–Source Voltage VDSS 100 Vdc Drain–to–Gate Voltage (RGS = 1.0 MΩ) VDGR 100 Vdc Gate–to–Source Voltage — Continuous Gate–to–Source Voltage — Non–Repetitive (tp ≤ 10 ms) VGS VGSM ± 20 ± 40 Vdc Vpk Drain Current — Continuous Drain Current — Continuous @ 100°C Drain Current — Single Pulse (tp ≤ 10 µs) ID ID IDM 40 29 140 Adc Total Power Dissipation Derate above 25°C PD 169 1.35 Watts W/°C TJ, Tstg – 55 to 150 °C Single Pulse Drain–to–Source Avalanche Energy — Starting TJ = 25°C (VDD = 75 Vdc, VGS = 10 Vdc, PEAK IL = 40 Apk, L = 1.0 mH, RG = 25 W) EAS 800 mJ Thermal Resistance — Junction to Case Thermal Resistance — Junction to Ambient RθJC RθJA 0.74 62.5 °C/W TL 260 °C Rating Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 10 seconds Apk This document contains information on a new product. Specifications and information herein are subject to change without notice. E–FET is a trademark of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc. REV 1 TMOS Motorola Motorola, Inc. 1997 Power MOSFET Transistor Device Data 1 MTP40N10E ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit 100 — — 112 — — — — — — 10 100 — — 100 2.0 — 2.9 6.7 4.0 — — 0.033 0.04 — — — — 1.9 1.7 gFS 17 21 — mhos Ciss — 2305 3230 pF Coss — 620 1240 Crss — 205 290 td(on) — 19 40 tr — 165 330 td(off) — 75 150 tf — 97 190 QT — 80 110 Q1 — 15 — Q2 — 40 — Q3 — 29 — — — 0.96 0.88 1.0 — trr — 152 — ta — 117 — tb — 35 — QRR — 1.0 — — — 3.5 4.5 — — — 7.5 — OFF CHARACTERISTICS Drain–to–Source Breakdown Voltage (VGS = 0 Vdc, ID = 0.25 mAdc) Temperature Coefficient (Positive) V(BR)DSS (Cpk ≥ 2.0) (3) Zero Gate Voltage Drain Current (VDS = 100 Vdc, VGS = 0 Vdc) (VDS = 100 Vdc, VGS = 0 Vdc, TJ =125°C) IDSS Gate–Body Leakage Current (VGS = ± 20 Vdc, VDS = 0 Vdc) IGSS Vdc mV/°C µAdc nAdc ON CHARACTERISTICS (1) Gate Threshold Voltage (VDS = VGS, ID = 250 µAdc) Threshold Temperature Coefficient (Negative) (Cpk ≥ 2.0) (3) Static Drain–to–Source On–Resistance (VGS = 10 Vdc, ID = 20 Adc) (Cpk ≥ 2.0) (3) Drain–to–Source On–Voltage (VGS = 10 Vdc, ID = 40 Adc) (VGS = 10 Vdc, ID = 20 Adc, TJ = 125°C) VGS(th) Vdc RDS(on) Ohms VDS(on) Forward Transconductance (VDS = 8.4 Vdc, ID = 20 Adc) mV/°C Vdc DYNAMIC CHARACTERISTICS Input Capacitance (VDS = 25 Vdc, Vdc VGS = 0 Vdc, Vdc f = 1.0 MHz) Output Capacitance Transfer Capacitance SWITCHING CHARACTERISTICS (2) Turn–On Delay Time (VDD = 50 Vdc, Vd ID = 40 Adc, Ad VGS = 10 Vdc Vdc, RG = 9.1 Ω)) Rise Time Turn–Off Delay Time Fall Time Gate Charge (See Figure 8) ((VDS = 80 Vdc, Vd , ID = 40 Adc, Ad , VGS = 10 Vdc) ns nC SOURCE–DRAIN DIODE CHARACTERISTICS Forward On–Voltage VSD (IS = 40 Adc, VGS = 0 Vdc) (IS = 40 Adc, VGS = 0 Vdc, TJ = 125°C) Reverse Recovery Time (See Figure 14) ((IS = 40 Adc, Ad , VGS = 0 Vdc, Vd , dIS/dt = 100 A/µs) Reverse Recovery Stored Charge Vdc ns µC INTERNAL PACKAGE INDUCTANCE Internal Drain Inductance (Measured from contact screw on tab to center of die) (Measured from the drain lead 0.25″ from package to center of die) LD Internal Source Inductance (Measured from the source lead 0.25″ from package to source bond pad) LS Ť nH Ť (1) Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%. (2) Switching characteristics are independent of operating junction temperature. Max limit – Typ (3) Reflects typical values. Cpk 3 sigma + 2 Motorola TMOS Power MOSFET Transistor Device Data MTP40N10E TYPICAL ELECTRICAL CHARACTERISTICS 80 VGS = 10 V 80 TJ = 25°C 8V I D , DRAIN CURRENT (AMPS) I D , DRAIN CURRENT (AMPS) 9V 7V 60 50 40 6V 30 20 5V 10 50 TJ = –55°C 40 30 20 0 0 1 2 3 4 5 6 7 8 VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS) 9 2 10 3 4 5 6 7 VGS, GATE–TO–SOURCE VOLTAGE (VOLTS) 0.07 VGS = 10 V 0.06 TJ = 100°C 0.05 0.04 25°C 0.03 –55°C 0.02 0.01 0 0 10 20 30 40 50 60 70 80 0.050 TJ = 25°C 0.045 0.040 VGS = 10 V 0.035 0.030 15 V 0.025 0.020 0.015 0.010 0 10 20 ID, DRAIN CURRENT (AMPS) Figure 3. On–Resistance versus Drain Current and Temperature 1.6 30 40 50 60 ID, DRAIN CURRENT (AMPS) 70 80 Figure 4. On–Resistance versus Drain Current and Gate Voltage 1000 2.0 1.8 8 Figure 2. Transfer Characteristics R DS(on) , DRAIN–TO–SOURCE RESISTANCE (OHMS) Figure 1. On–Region Characteristics R DS(on) , DRAIN–TO–SOURCE RESISTANCE (OHMS) 25°C 60 10 0 VGS = 0 V VGS = 10 V ID = 20 A 1.4 I DSS , LEAKAGE (nA) RDS(on) , DRAIN–TO–SOURCE RESISTANCE (NORMALIZED) 100°C VDS ≥ 10 V 70 70 1.2 1.0 0.8 0.6 TJ = 125°C 100 100°C 10 0.4 0.2 0 –50 1.0 –25 0 25 50 75 100 TJ, JUNCTION TEMPERATURE (°C) 125 150 Figure 5. On–Resistance Variation with Temperature Motorola TMOS Power MOSFET Transistor Device Data 0 10 50 20 30 40 60 70 80 VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS) 90 100 Figure 6. Drain–To–Source Leakage Current versus Voltage 3 MTP40N10E POWER MOSFET SWITCHING Switching behavior is most easily modeled and predicted by recognizing that the power MOSFET is charge controlled. The lengths of various switching intervals (∆t) are determined by how fast the FET input capacitance can be charged by current from the generator. The capacitance (Ciss) is read from the capacitance curve at a voltage corresponding to the off–state condition when calculating td(on) and is read at a voltage corresponding to the on–state when calculating td(off). The published capacitance data is difficult to use for calculating rise and fall because drain–gate capacitance varies greatly with applied voltage. Accordingly, gate charge data is used. In most cases, a satisfactory estimate of average input current (IG(AV)) can be made from a rudimentary analysis of the drive circuit so that At high switching speeds, parasitic circuit elements complicate the analysis. The inductance of the MOSFET source lead, inside the package and in the circuit wiring which is common to both the drain and gate current paths, produces a voltage at the source which reduces the gate drive current. The voltage is determined by Ldi/dt, but since di/dt is a function of drain current, the mathematical solution is complex. The MOSFET output capacitance also complicates the mathematics. And finally, MOSFETs have finite internal gate resistance which effectively adds to the resistance of the driving source, but the internal resistance is difficult to measure and, consequently, is not specified. The resistive switching time variation versus gate resistance (Figure 9) shows how typical switching performance is affected by the parasitic circuit elements. If the parasitics were not present, the slope of the curves would maintain a value of unity regardless of the switching speed. The circuit used to obtain the data is constructed to minimize common inductance in the drain and gate circuit loops and is believed readily achievable with board mounted components. Most power electronic loads are inductive; the data in the figure is taken with a resistive load, which approximates an optimally snubbed inductive load. Power MOSFETs may be safely operated into an inductive load; however, snubbing reduces switching losses. t = Q/IG(AV) During the rise and fall time interval when switching a resistive load, VGS remains virtually constant at a level known as the plateau voltage, VSGP. Therefore, rise and fall times may be approximated by the following: tr = Q2 x RG/(VGG – VGSP) tf = Q2 x RG/VGSP where VGG = the gate drive voltage, which varies from zero to VGG RG = the gate drive resistance and Q2 and VGSP are read from the gate charge curve. During the turn–on and turn–off delay times, gate current is not constant. The simplest calculation uses appropriate values from the capacitance curves in a standard equation for voltage change in an RC network. The equations are: td(on) = RG Ciss In [VGG/(VGG – VGSP)] td(off) = RG Ciss In (VGG/VGSP) 8000 VGS = 0 V VDS = 0 V TJ = 25°C C, CAPACITANCE (pF) 7000 6000 5000 Ciss Crss 4000 3000 Ciss 2000 Coss 1000 0 –10 Crss –5 0 VGS 5 10 15 20 25 VDS GATE–TO–SOURCE OR DRAIN–TO–SOURCE VOLTAGE (VOLTS) Figure 7. Capacitance Variation 4 Motorola TMOS Power MOSFET Transistor Device Data 80 VGS 9 72 QT 8 64 7 56 6 48 Q1 Q2 5 40 4 32 3 1 0 24 ID = 40 A TJ = 25°C 2 VDS Q3 0 10 16 20 30 40 50 60 70 80 8 0 10,000 t, TIME (ns) 10 VDS , DRAIN–TO–SOURCE VOLTAGE (VOLTS) VGS, GATE–TO–SOURCE VOLTAGE (VOLTS) MTP40N10E VDD = 50 V ID = 40 A VGS = 10 V TJ = 25°C 1000 tr tf 100 td(off) td(on) 10 1.0 10 QG, TOTAL GATE CHARGE (nC) RG, GATE RESISTANCE (OHMS) Figure 8. Gate–To–Source and Drain–To–Source Voltage versus Total Charge Figure 9. Resistive Switching Time Variation versus Gate Resistance 100 DRAIN–TO–SOURCE DIODE CHARACTERISTICS 40 VGS = 0 V TJ = 25°C I S , SOURCE CURRENT (AMPS) 35 30 25 20 15 10 5 0 0.60 0.65 0.70 0.75 0.80 0.85 0.90 0.95 1.0 VSD, SOURCE–TO–DRAIN VOLTAGE (VOLTS) Figure 10. Diode Forward Voltage versus Current SAFE OPERATING AREA The Forward Biased Safe Operating Area curves define the maximum simultaneous drain–to–source voltage and drain current that a transistor can handle safely when it is forward biased. Curves are based upon maximum peak junction temperature and a case temperature (TC) of 25°C. Peak repetitive pulsed power limits are determined by using the thermal response data in conjunction with the procedures discussed in AN569, “Transient Thermal Resistance–General Data and Its Use.” Switching between the off–state and the on–state may traverse any load line provided neither rated peak current (IDM) nor rated voltage (VDSS) is exceeded and the transition time (tr,tf) do not exceed 10 µs. In addition the total power averaged over a complete switching cycle must not exceed (TJ(MAX) – TC)/(RθJC). A Power MOSFET designated E–FET can be safely used in switching circuits with unclamped inductive loads. For reli- Motorola TMOS Power MOSFET Transistor Device Data able operation, the stored energy from circuit inductance dissipated in the transistor while in avalanche must be less than the rated limit and adjusted for operating conditions differing from those specified. Although industry practice is to rate in terms of energy, avalanche energy capability is not a constant. The energy rating decreases non–linearly with an increase of peak current in avalanche and peak junction temperature. Although many E–FETs can withstand the stress of drain– to–source avalanche at currents up to rated pulsed current (IDM), the energy rating is specified at rated continuous current (ID), in accordance with industry custom. The energy rating must be derated for temperature as shown in the accompanying graph (Figure 12). Maximum energy at currents below rated continuous ID can safely be assumed to equal the values indicated. 5 MTP40N10E SAFE OPERATING AREA 800 RDS(on) LIMIT THERMAL LIMIT PACKAGE LIMIT VGS = 20 V SINGLE PULSE TC = 25°C 10 ms 100 ms 100 EAS , SINGLE PULSE DRAIN–TO–SOURCE AVALANCHE ENERGY (mJ) I D , DRAIN CURRENT (AMPS) 1000 1.0 ms 10 10 ms dc 1.0 0.1 1.0 100 10 ID = 40 A 700 600 500 400 300 200 100 0 25 1000 50 75 100 125 150 VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS) TJ, STARTING JUNCTION TEMPERATURE (°C) Figure 11. Maximum Rated Forward Biased Safe Operating Area Figure 12. Maximum Avalanche Energy versus Starting Junction Temperature r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 1.0 D = 0.5 0.2 0.1 0.1 P(pk) 0.05 0.02 t1 t2 DUTY CYCLE, D = t1/t2 0.0 SINGLE PULSE RθJC(t) = r(t) RθJC D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) – TC = P(pk) RθJC(t) 0.01 1.0E–05 1.0E–04 1.0E–03 1.0E–02 1.0E–01 1.0E+00 1.0E+01 t, TIME (seconds) Figure 13. Thermal Response di/dt IS trr ta tb TIME 0.25 IS tp IS Figure 14. Diode Reverse Recovery Waveform 6 Motorola TMOS Power MOSFET Transistor Device Data MTP40N10E PACKAGE DIMENSIONS –T– B NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. SEATING PLANE C F T S 4 A Q 1 2 3 STYLE 5: PIN 1. 2. 3. 4. U H K Z L R V J G D N GATE DRAIN SOURCE DRAIN DIM A B C D F G H J K L N Q R S T U V Z INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.147 0.095 0.105 0.110 0.155 0.018 0.025 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 ––– ––– 0.080 MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 3.73 2.42 2.66 2.80 3.93 0.46 0.64 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 ––– ––– 2.04 CASE 221A–06 ISSUE Y Motorola TMOS Power MOSFET Transistor Device Data 7 MTP40N10E Motorola reserves the right to make changes without further notice to any products herein. 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