DG417BMIL, DG418BMIL, DG419BMIL www.vishay.com Vishay Siliconix Precision Monolithic Quad SPST CMOS Analog Switches DESCRIPTION FEATURES The DG417B, DG418B, DG419B monolithic CMOS analog switches were designed to provide high performance switching of analog signals. Combining low power, low leakages, high speed, low on-resistance and small physical size, the DG417B series is ideally suited for portable and battery powered industrial and military applications requiring high performance and efficient use of board space. • • • • • To achieve high-voltage ratings and superior switching performance, the DG417B series is built on Vishay Siliconix’s high voltage silicon gate (HVSG) process. Break-before-make is guaranteed for the DG419B, which is an SPDT configuration. An epitaxial layer prevents latchup. Each switch conducts equally well in both directions when on, and blocks up to the power supply level when off. The DG417B and DG418B respond to opposite control logic levels as shown in the Truth Table. ± 15 V analog signal range On-resistance - RDS(on): 15 Fast switcing action - tON: 110 ns TTL and CMOS compatible 8-pin CerDIP package BENEFITS • • • • • • Widest dynamic ranges Low signal errors and distortion Break-before-make switching action Simple interfacing Reduced board space Improved reliability APPLICATIONS • • • • • • • • Precision test equipment Precision instrumentation Battery powered systems Sample-and-hold circuits Military radios Hi-Rel systems Guidance and control systems Hard disk drivers FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION DG417B, DG418B Dual-In-Line S 1 8 D No connect 2 7 V- GND 3 6 IN V+ 4 5 VL TRUTH TABLE LOGIC DG417B DG418B 0 On Off 1 Off On Notes • Logic “0” 0.8 V • Logic “1” 2.4 V Top View DG419B Dual-In-Line TRUTH TABLE (DG419B) D 1 8 S2 LOGIC SW1 SW2 S1 2 7 V- 0 On Off GND 3 6 IN 1 Off On V+ 4 5 VL Top View S12-0496-Rev. B, 05-Mar-12 Notes • Logic “0” 0.8 V • Logic “1” 2.4 V Document Number: 63275 1 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 DG417BMIL, DG418BMIL, DG419BMIL www.vishay.com Vishay Siliconix ORDERING INFORMATION PART CONFIGURATION DG417B TEMP. RANGE PACKAGE ORDERING PART GENERIC DSCC NUMBER 9073704PA DG417BAK/883 5962-9073704MPA - SPST x 1, NC DG418B SPST x 1, NO DG419B - 55 °C to 125 °C 8-pin CerDIP SPDT x 1 DG417BAK DG417BAK DG417BAK-E3 DG417BAK-E3 - 9073705PA DG418BAK/883 5962-9073705MPA - DG418BAK DG418BAK DG418BAK-E3 DG418BAK-E3 - 9073706PA DG419BAK/883 5962-9073706MPA DG419BAK DG419BAK - DG419BAK-E3 DG419BAK-E3 - ABSOLUTE MAXIMUM RATINGS PARAMETER V+ Voltages Referenced to V- GND VL LIMIT 44 UNIT 25 V (GND - 0.3) to (V+) + 0.3 (V-) - 2 V to (V+) + 2 or 30 mA, whichever occurs first Digital inputsa, VS, VD Current, (any terminal) continuous 30 Current (S or D) pulsed at 1 ms, 10 % duty cycle 100 Storage temperature Power dissipation (package)b 8-pin CerDIPc mA - 65 to 150 °C 600 mW Notes a. Signals on SX, DX or INX exceeding V + or V - will be clamped by internal diodes. Limit forward diode current to maximum current ratings. b. All leads soldered or welded to PC board. c. Derate 8 mW/°C above 75 °C. SCHEMATIC DIAGRAM (Typical Channel) V+ S VL VVIN Level Shift/ Drive V+ GND D V- Fig. 1 S12-0496-Rev. B, 05-Mar-12 Document Number: 63275 2 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 DG417BMIL, DG418BMIL, DG419BMIL www.vishay.com Vishay Siliconix SPECIFICATIONSa PARAMETER SYMBOL TEST CONDITIONS UNLESS OTHERWISE SPECIFIED V+ = 15 V, V- = - 15 V VL = 5 V, VIN = 2.4 V, 0.8 Vf A SUFFIX - 55 °C to 125 °C TEMP.b TYP.c MIN.d MAX.d UNIT Analog Switch Analog Signal Rangee VANALOG Drain-Source On-Resistance RDS(on) Full IS = - 10 mA, VD = ± 12.5 V V+ = 13.5 V, V - = - 13.5 V IS(off) ID(off) V+ = 16.5, V- = - 16.5 V VD = ± 15.5 V, VS = ± 15.5 V DG418B DG419B DG417B Channel On Leakage Current ID(on) V 15 25 Full 15 34 Room - 0.1 - 0.1 - 0.1 - 0.1 - 0.1 - 0.1 - 0.1 - 0.1 - 0.4 - 0.4 - 0.4 - 0.4 - 0.4 - 0.4 Full DG417B Switch Off Leakage Current 15 Room V+ = 16.5 V, V - = - 16.5 V VS = VD = ± 15.5 V DG418B DG419B Room Full Room Full Room Full Room Full Room Full Room Full - 15 - 0.25 0.25 - 20 20 - 0.25 0.25 - 20 20 - 0.25 0.25 - 20 20 - 0.75 0.75 - 60 60 - 0.4 0.4 - 40 40 - 0.4 0.4 - 40 40 - 0.75 0.75 - 60 60 nA Digital Control Input Current, VIN Low IIL Full - 0.5 0.5 Input Current, VIN High IIH Full - 0.5 0.5 μA Dynamic Characteristics DG417B Turn-On Time tON RL = 300 , CL = 35 pF VS = ± 10 V, see switching time test circuit Turn-Off Time DG418B DG417B tOFF DG418B Full 53 88 Room 53 80 88 CL = 10 nF, Vgen = 0 V, Rgen = 0 Room 38 RL = 50 CL = 5 pF, f = 1 MHz Room - 82 Room - 88 Room 12 DG417B Room 12 DG418B Room 12 DG417B Room 50 DG418B Room 50 DG419B Room 57 CD(off) f = 1 MHz, VS = 0 V ns 3 pC dB DG419B f = 1 MHz, VS = 0 V S12-0496-Rev. B, 05-Mar-12 80 16 OIRR CD(on) 53 Room Q Channel On Capacitancee Room 87 Charge Injection Drain Off Capacitancee 106 96 DG419B CS(off) 89 62 60 RL = 300 , CL = 35 pF VS1 = VS2 = ± 10 V Source Off Capacitancee 62 Full Full tD XTALK Room 60 Break-Before-Make Time Delay Channel-to-Channel Crosstalke 106 53 DG419B Off 89 62 Full tTRANS Isolatione 62 Full Room RL = 300 , CL = 35 pF VS1 = ± 10 V, VS2 = ± 10 V Transition Time Room pF Document Number: 63275 3 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 DG417BMIL, DG418BMIL, DG419BMIL www.vishay.com Vishay Siliconix SPECIFICATIONSa PARAMETER SYMBOL TEST CONDITIONS UNLESS OTHERWISE SPECIFIED V+ = 12 V, V- = - 0 V VL = 5 V, VIN = 2.4 V, 0.8 Vf A SUFFIX - 55 °C to 125 °C TEMP.b TYP.c Room 0.001 MIN.d MAX.d UNIT Power Supplies Positive Supply Current I+ Negative Supply Current I- Logic Supply Current IL Ground Current 1 Full Room 5 - 0.001 Full V+ = 16.5 V, V- = - 16.5 V VIN = 0 V or 5 V Room -1 -5 0.001 1 Full Room IGND μA 5 - 0.001 Full -1 -5 Analog Switch Analog Signal Rangee VANALOG Drain-Source On-Resistance RDS(on) Full IS = - 10 mA, VD = 3.8 V V+ = 10.8 V 0 12 Room 26 35 Full 26 52 V Dynamic Characteristics Turn-On Time tON Turn-Off Time tOFF Break-Before-Make Time Delay tD RL = 300 , CL = 35 pF VS = 8 V, see switching time test circuit RL = 300 , CL = 35 pF DG419B Room 100 125 Full 100 155 Room 38 66 Full 38 69 Room 62 ns 25 Transition Time tTRANS RL = 300 , CL = 35 pF VS1 = 0 V, 8 V, VS2 = 8 V,0 V Room 95 119 Full 95 153 Charge Injection Q CL = 10 nF, Vgen = 0 V, Rgen = 0 Room 18 Room 0.001 1 Full 0.001 5 Room - 0.001 pC Power Supplies Positive Supply Current I+ Negative Supply Current I- Logic Supply Current IL Ground Current IGND V+ = 13.2 V, VL = 5.25 V VIN = 0 V or 5 V Room 0.001 Room - 0.001 -1 -5 μA 1 5 -1 -5 Notes a. Refer to PROCESS OPTION FLOWCHART. b. Room = 25 °C, full = as determined by the operating temperature suffix. c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. d. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this datasheet. e. Guaranteed by design, not subject to production test. f. VIN = input voltage to perform proper function. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S12-0496-Rev. B, 05-Mar-12 Document Number: 63275 4 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 DG417BMIL, DG418BMIL, DG419BMIL www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 300 40 RDS(on) - Drain-Source On-Resistance (Ω) RDS(on) - Drain-Source On-Resistance (Ω) TA = 25 °C VL = 5 V 250 200 V+ = 3 V VL = 3 V 150 100 V+ = 12 V V+ = 5 V 50 V+ = 15 V V+ = 8 V V+ = 20 V 0 0 4 8 12 16 TA = 25 °C 35 30 ±5V 25 ±8V 20 ± 10 V ± 12 V 15 ± 15 V 10 ± 20 V 5 - 20 20 - 15 - 10 VD - Drain Voltage (V) RDS(on) - Drain-Source On-Resistance (Ω) RDS(on) - Drain-Source On-Resistance (Ω) V ± = ± 15 V VL = 5 V 25 125 °C 20 85 °C 15 25 °C - 55 °C 10 20 125 °C 40 35 85 °C 30 25 °C 25 - 55 °C 20 15 V+ = 12 V V- = 0 V VL = 5 V 10 -5 0 5 10 15 0 2 4 6 8 10 12 VD - Drain Voltage (V) On-Resistance vs. VD and Temperature On-Resistance vs. VD and Temperature 100 m V ± = ± 15 V VL = 5 V TA = 25 °C I+ - Supply Current (nA) ID(on) ID(off) 20 0 IS(off) - 20 - 40 1m 100 µ I+, I10 µ 100 n 10 n - 80 1n -5 0 5 10 VD or VS - Drain or Source Voltage (V) Leakage vs. Analog Voltage S12-0496-Rev. B, 05-Mar-12 15 IL 1µ - 60 - 10 V ± = ± 15 V VL = 5 V 10 m 40 ID, IS (pA) 15 5 - 10 100 - 100 -15 10 45 VD - Drain Voltage (V) 60 5 50 30 80 0 On-Resistance vs. VD and Dual Supply Voltage On-Resistance vs. VD and Unipolar Power Supply Voltage 5 - 15 -5 VD - Drain Voltage (V) 100 p 10 100 1K 10 K 100 K 1M 10 M Input Switching Frequency (Hz) Supply current vs. Input Switching Frequency Document Number: 63275 5 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 DG417BMIL, DG418BMIL, DG419BMIL www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 140 100 VL = 5 V 90 120 80 tON V = 12 V t ON , t OFF (ns) 100 t ON , t OFF (ns) V ± = ± 15 V VL = 5 V 80 tON V = ± 15 V 60 tOFF V = ± 15 V 70 tTRANS- 60 tTRANS+ 50 40 tOFF V = 12 V 40 30 20 - 55 - 35 - 15 5 25 45 65 85 105 20 - 55 125 - 35 - 15 25 45 65 105 125 10 140 Loss, OIRR, X TALK (dB) - 10 tTRANS- 100 Loss 0 V+ = 12 V V- = 0 V VL = 5 V 120 80 tTRANS+ 60 - 20 - 30 OIRR - 40 - 50 - 60 - 70 DG417B V+ = + 15 V V- = - 15 V RL = 50 Ω - 80 40 - 90 20 - 55 - 35 - 15 5 25 45 65 85 105 - 100 100K 125 1M 10M 100M 1G Frequency (Hz) Temperature ( C) Insertion Loss, Off-Isolation Crosstalk vs. Frequency Transition Time vs. Temperature 3.0 10 VL = 5 V Loss 0 2.5 - 10 Loss, OIRR, X TALK (dB) VT - Switching Threshold (V) 85 Transition Time vs. Temperature Switching Time vs. Temperature t ON , t OFF (ns) 5 Temperature ( C) Temperature ( C) 2.0 1.5 1.0 0.5 - 20 - 30 OIRR - 40 XTALK - 50 - 60 - 70 DG419B V+ = + 15 V V- = - 15 V RL = 50 Ω - 80 - 90 0.0 4 6 8 10 12 14 16 18 V+ - Supply Voltage (V) Switching Threshold vs. Supply Voltage S12-0496-Rev. B, 05-Mar-12 20 - 100 100K 1M 10M 100M 1G Frequency (Hz) Insertion Loss, Off-Isolation Crosstalk vs. Frequency Document Number: 63275 6 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 DG417BMIL, DG418BMIL, DG419BMIL www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 160 140 120 100 80 60 40 20 0 200 180 DG417B CL = 10 nF DG417B CL = 10 nF 160 140 V+ = + 15 V V- = - 15 V Qinj - Charge Injection (pC) Qinj - Charge Injection (pC) 200 180 V+ = + 12 V V- = 0 V - 20 - 40 120 100 80 V+ = + 15 V V- = - 15 V 60 40 20 0 V+ = + 12 V V- = 0 V - 20 V+ = + 12 V V- = - 12 V - 40 V+ = + 12 V V- = - 12 V - 60 - 80 - 100 - 15 - 12 -9 -6 -3 0 3 6 9 12 - 60 - 80 - 100 - 15 - 12 15 -9 Qinj - Charge Injection (pC) Qinj - Charge Injection (pC) DG419B CL = 10 nF V+ = + 12 V V- = - 12 V V+ = + 12 V V- = - 0 V V+ = + 15 V V- = - 15 V -9 -6 -3 0 3 -3 0 3 6 9 12 15 Charge Injection vs. Analog Voltage (Measured at source pin) Charge Injection vs. Analog Voltage (Measured at drain pin) 100 80 60 40 20 0 - 20 - 40 - 60 - 80 - 100 - 120 - 140 - 160 - 180 - 200 - 15 - 12 -6 Analog Voltage (V) Analog Voltage (V) 6 9 12 15 200 180 DG419B 160 CL = 10 nF 140 120 100 V+ = + 15 V 80 V- = - 15 V 60 40 20 0 - 20 - 40 V+ = + 12 V - 60 V- = - 12 V - 80 - 100 - 15 - 12 - 9 - 6 - 3 0 V+ = + 12 V V- = - 0 V 3 6 9 12 15 Analog Voltage (V) Analog Voltage (V) Charge Injection vs. Analog Voltage (Measured at source pin) Charge Injection vs. Analog Voltage (Measured at drain pin) TEST CIRCUITS VO is the steady state output with the switch on. +5V + 15 V 3V Logic Input VL V+ S 0V D VO 10 V IN GND tr < 5 ns tf < 5 ns 50 % V- RL 300 - 15 V CL (includes fixture and stray capacitance) RL VO = VS RL + R DS(on) CL 35 pF tOFF Switch Input VS Switch Output 0V Note: VO 90 % tON Logic input waveform is inverted for switches that have the opposite logic sense. Fig. 2 - Switching Time (DG417B, DG418B) S12-0496-Rev. B, 05-Mar-12 Document Number: 63275 7 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 DG417BMIL, DG418BMIL, DG419BMIL www.vishay.com Vishay Siliconix TEST CIRCUITS +5V +1V Logic Input VL V+ S1 VS1 tr < 5 ns tf < 5 ns 3V 0V D VO S2 VS2 RL 300 IN VS1 = VS2 VO CL 35 pF Switch Output V- GND 90 % 0V tD tD CL (includes fixture and stray capacitance) - 15 V Fig. 3 - Break-Before-Mak (DG419B) +5V VL + 15 V V+ S1 VS1 D VO Logic Input 50 % 0V S2 VS2 IN tTRANS CL 35 pF RL 300 tr < 5 ns tf < 5 ns 3V tTRANS VS1 V01 V- GND 90 % Switch Output V02 VS2 - 15 V 10 % CL (includes fixture and stray capacitance) VO = VS RL RL + rDS(on) Fig. 4 - Transition Time (DG419B) Rg +5V + 15 V VL V+ S VO D IN VO INX OFF CL 10 nF 3V GND VO V- ON OFF Q = VO x CL - 15 V Fig. 5 - Charge Injection S12-0496-Rev. B, 05-Mar-12 Document Number: 63275 8 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 DG417BMIL, DG418BMIL, DG419BMIL www.vishay.com Vishay Siliconix TEST CIRCUITS +5V + 15 V C +5V C VL C V+ S1 VS VL V+ S VS 50 VO D Rg = 50 S2 RL IN 0 V, 2.4 V RL C D Rg = 50 VO + 15 V IN 0.8 V GND GND C V- VO Off Isolation = 20 log VS C = RF bypass Fig. 7 - Off Isolation + 15 V C C VL V+ S VS VO VS Fig. 6 - Crosstalk +5V C - 15 V - 15 V XTALK Isolation = 20 log V- D VO Rg = 50 0 V, 2.4 V RL IN GND V- C - 15 V Fig. 8 - Insertion Loss +5V + 15 V NC + 15 V C C VL C V+ S DG417B/418B DG419B Meter 0 V, 2.4 V IN HP4192A Impedance Analyzer or Equivalent D GND V- S1 V+ S2 C f = 1 MHz 0 V, 2.4 V Meter IN D2 GND HP4192A Impedance Analyzer or Equivalent D1 V- C f = 1 MHz - 15 V - 15 V Fig. 9 - Source-Drain Capacitances Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?63275. S12-0496-Rev. B, 05-Mar-12 Document Number: 63275 9 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information Vishay Siliconix CERDIP: 8ĆLEAD 8 7 6 MILLIMETERS 5 Dim A A1 B B1 C D E E1 e1 eA L L1 Q1 S E E1 1 2 3 4 D S e1 Q1 A L1 A1 ∝ L INCHES Min Max Min Max 4.06 5.08 0.160 0.200 0.51 1.14 0.020 0.045 0.38 0.51 0.015 0.020 1.14 1.65 0.045 0.065 0.20 0.30 0.008 0.012 9.40 10.16 0.370 0.400 7.62 8.26 0.300 0.325 6.60 7.62 0.260 0.300 2.54 BSC 0.100 BSC 7.62 BSC 0.300 BSC 3.18 3.81 0.125 0.150 3.18 5.08 0.150 0.200 1.27 2.16 0.050 0.085 0.64 1.52 0.025 0.060 0° 15° 0° 15° ECN: S-03946—Rev. C, 09-Jul-01 DWG: 5348 B1 B Document Number: 71280 03-Jul-01 C eA ∝ www.vishay.com 1 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000