DG417B/418B/419B Vishay Siliconix Precision Monolithic Quad SPST CMOS Analog Switches DESCRIPTION FEATURES The DG417B/418B/419B monolithic CMOS analog switches were designed to provide high performance switching of analog signals. Combining low power, low leakages, high speed, low on-resistance and small physical size, the DG417B series is ideally suited for portable and battery powered industrial and military applications requiring high performance and efficient use of board space. • • • • • To achieve high-voltage ratings and superior switching performance, the DG417B series is built on Vishay Siliconix’s high voltage silicon gate (HVSG) process. Break-before-make is guaranteed for the DG419B, which is an SPDT configuration. An epitaxial layer prevents latchup. Each switch conducts equally well in both directions when on, and blocks up to the power supply level when off. The DG417B and DG418B respond to opposite control logic levels as shown in the Truth Table. ± 15 V Analog Signal Range On-Resistance - rDS(on): 15 Ω Fast Switching Action - tON: 110 ns TTL and CMOS Compatible MSOP-8 and SOIC-8 Package Pb-free Available RoHS* COMPLIANT BENEFITS • • • • • • Widest Dynamic Range Low Signal Errors and Distortion Break-Before-Make Switching Action Simple Interfacing Reduced Board Space Improved Reliability APPLICATIONS • • • • • • • Precision Test Equipment Precision Instrumentation Battery Powered Systems Sample-and-Hold Circuits Military Radios Guidance and Control Systems Hard Disk Drivers FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION DG417B Dual-In-Line, SOIC-8 and MSOP-8 S 1 8 D NC 2 7 V- GND 3 6 IN V+ 4 5 VL Top View TRUTH TABLE Logic 0 1 Logic "0" ≤ 0.8 V Logic "1" ≥ 2.4 V DG417B ON OFF DG418B OFF ON DG419B Dual-In-Line, SOIC-8 and MSOP-8 D 1 8 S2 S1 2 7 V- GND V+ 6 3 5 4 IN VL Top View TRUTH TABLE - DG419B Logic SW1 SW2 0 ON OFF 1 OFF ON Logic "0" ≤ 0.8 V Logic "1" ≥ 2.4 V * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 72107 S-71009–Rev. C, 14-May-07 www.vishay.com 1 DG417B/418B/419B Vishay Siliconix ORDERING INFORMATION Temp Range DG417B/418B Package Part Number 8-Pin Plastic MiniDIP - 40 to 85 °C 8-Pin Narrow SOIC DG417BDJ DG417BDJ-E3 DG418BDJ DG418BDJ-E3 DG417BDY DG417BDY-E3 DG417BDY-T1 DG417BDY-T1-E3 DG418BDY DG418BDY-E3 DG418BDY-T1 DG418BDY-T1-E3 DG417BDQ-T1-E3 8-Pin MSOP DG418BDQ-T1-E3 DG419B 8-Pin Plastic MiniDIP DG419BDJ DG419BDJ-E3 8-Pin Narrow SOIC DG419BDY DG419BDY-E3 DG419BDY-T1 DG419BDY-T1-E3 8-Pin MSOP DG419BDQ-T1-E3 - 40 to 85 °C ABSOLUTE MAXIMUM RATINGS Parameter Limit V- - 20 V+ 20 GND VL Unit 25 Digital Inputsa, VS, VD Current, (Any Terminal) Continuous Current (S or D) Pulsed at 1 ms, 10 % duty cycle 100 Storage Temperature - 65 to 150 8-Pin Plastic MiniDIP b Power Dissipation (Package) 8-Pin Narrow SOICc 8-Pin MSOP V (GND - 0.3 V) to (V+) + 0.3 (V-) - 2 V to (V+) + 2 or 30 mA, whichever occurs first 30 d 8-Pin CerDIPe c mA °C 400 400 400 mW 600 Notes: a. Signals on SX, DX, or INX exceeding V+ or V- will be clamped by internal diodes. Limit forward diode current to maximum current ratings. b. All leads welded or soldered to PC Board. c. Derate 5.3 mW/°C above 75 °C. d. Derate 4 mW/°C above 70 °C. e. Derate 8 mW/°C above 75 °C. www.vishay.com 2 Document Number: 72107 S-71009–Rev. C, 14-May-07 DG417B/418B/419B Vishay Siliconix SCHEMATIC DIAGRAM (TYPICAL CHANNEL) V+ S VL VLevel Shift/ Drive VIN V+ GND D V- Figure 1. SPECIFICATIONSa Test Conditions Unless Otherwise Specified V+ = 15 V, V- = - 15 V Parameter Analog Switch Symbol Analog Signal Rangee VANALOG Drain-Source On-Resistance rDS(on) VL = 5 V, VIN = 2.4 V, 0.8 Vf Tempb IS = - 10 mA, VD = ± 12.5 V V+ = 13.5 V, V- = - 13.5 V Room Full Full IS(off) Switch Off Leakage Current ID(off) V+ = 16.5, V- = - 16.5 V DG417B VD = ± 15.5 V, VS = ± 15.5 V DG418B DG419B Channel On Leakage Current ID(on) Typc V+ = 16.5 V, V- = - 16.5 V VS = VD = ± 15.5 V DG417B DG418B DG419B Room Full Room Full Room Full Room Full Room Full A Suffix - 55 to 125 °C D Suffix - 40 to 85 °C Mind Maxd Mind - 15 15 - 15 25 34 15 - 0.1 - 0.1 - 0.1 - 0.4 - 0.4 Maxd Unit 15 V 25 29 Ω nA - 0.25 - 20 - 0.25 - 20 - 0.75 - 60 - 0.4 - 40 - 0.75 - 60 0.25 20 0.25 20 0.75 60 0.4 40 0.75 60 - 0.25 -5 - 0.25 -5 - 0.75 - 12 - 0.4 - 10 - 0.75 - 12 0.25 5 0.25 5 0.75 12 0.4 10 0.75 12 Digital Control Input Current, VIN Low IIL Full - 0.5 0.5 - 0.5 0.5 Input Current, VIN High IIH Full - 0.5 0.5 - 0.5 0.5 µA Dynamic Characteristics Turn-On Time tON RL = 300 Ω, CL = 35 pF Turn-Off Time tOFF VS = ± 10 V, See Switching Time Test Circuit Transition Time tTRANS RL = 300 Ω, CL = 35 pF VS1 = ± 10 V, VS2 = ± 10 V RL = 300 Ω, CL = 35 pF DG417B DG418B DG417B DG418B Room Full Room Full DG419B Room Full 60 DG419B Room 16 62 53 Break-Before-Make Time Delay tD Charge Injection Q CL = 10 nF Vgen = 0 V, Rgen = 0 Ω Room 4 OIRR RL = 50 Ω, CL = 5 pF, f = 1 MHz Room - 86 Room - 87 Off Isolatione Channel-to-Channel Crosstalke Document Number: 72107 S-71009–Rev. C, 14-May-07 XTALK VS1 = VS2 = ± 10 V DG419B 3 89 106 80 88 89 99 80 86 87 96 87 93 ns 3 pC dB www.vishay.com 3 DG417B/418B/419B Vishay Siliconix SPECIFICATIONSa Test Conditions Unless Otherwise Specified V+ = 15 V, V- = - 15 V Parameter Source Off Capacitance Symbol CS(off) Drain Off Capacitancee CD(off) e Channel On Capacitancee CD(on) VL = 5 V, VIN = 2.4 V, 0.8 Vf f = 1 MHz, VS = 0 V f = 1 MHz, VS = 0 V DG417B DG418B DG417B DG418B DG419B Tempb Room Typc Room 12 Room 50 Room 57 Room Full Room Full Room Full Room Full 0.001 A Suffix - 55 to 125 °C D Suffix - 40 to 85 °C Mind Mind Maxd Maxd Unit 12 pF Power Supplies Positive Supply Current I+ Negative Supply Current I- Logic Supply Current IL Ground Current V+ = 16.5 V, V- = - 16.5 V VIN = 0 or 5 V IGND - 0.001 1 5 -1 -5 0.001 - 0.001 1 5 -1 -5 1 5 -1 -5 1 5 µA -1 -5 SPECIFICATIONSa Test Conditions Unless Otherwise Specified V+ = 12 V, V- = 0 V Parameter Analog Switch Symbol Analog Signal Rangee VANALOG Drain-Source On-Resistance rDS(on) VL = 5 V, VIN = 2.4 V, 0.8 Vf Tempb IS = - 10 mA, VD = 3.8 V V+ = 10.8 V, Room Full Typc Full A Suffix - 55 to 125 °C D Suffix - 40 to 85 °C Mind Maxd Mind Maxd Unit 0 12 0 26 12 V 35 52 35 45 Ω 125 155 66 73 125 143 66 69 Dynamic Characteristics Turn-On Time Turn-Off Time Break-Before-Make Time Delay tON RL = 300 Ω, CL = 35 pF tOFF VS = 8 V, See Switching Time Test Circuit tD Transition Time tTRANS Charge Injection Q RL = 300 Ω, CL = 35 pF Room Full Room Full 100 38 DG419B Room 62 VS1 = 0 V, 8 V, VS2 = 8 V, 0 V Room Full 95 CL = 10 nF, Vgen = 0 V, Rgen = 0 Ω Room 3 Room Full 0.001 Room - 0.001 Room 0.001 Room - 0.001 RL = 300 Ω, CL = 35 pF 25 ns 25 119 153 119 141 pC Power Supplies Positive Supply Current I+ Negative Supply Current I- Logic Supply Current IL Ground Current IGND V+ = 13.2 V, VL = 5.25 V VIN = 0 or 5 V 1 5 -1 -5 1 5 -1 -5 1 5 -1 -5 1 5 µA -1 -5 Notes: a. Refer to PROCESS OPTION FLOWCHART. b. Room = 25 °C, Full = as determined by the operating temperature suffix. c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. d. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet. e. Guaranteed by design, not subject to production test. f. VIN = input voltage to perform proper function. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 4 Document Number: 72107 S-71009–Rev. C, 14-May-07 DG417B/418B/419B Vishay Siliconix TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted 40 TA = 25 °C VL = 5 V 250 200 V+ = 3.0 V VL = 3 V 150 V+ = 12.0 V 100 V+ = 5.0 V 50 V+ = 15.0 V V+ = 8.0 V TA = 25 °C rDS(on) – Drain-Source On-Resistance ( ) rDS(on) – Drain-Source On-Resistance ( ) 300 V+ = 20.0 V 35 30 25 ±8V 20 4 8 12 16 ± 10 V ± 12 V ± 15 V 15 10 ± 20 V 0 0 ±5V 5 - 20 20 - 15 - 10 -5 VD – Drain Voltage (V) rDS(on) – Drain-Source On-Resistance ( ) rDS(on) – Drain-Source On-Resistance ( ) 25 125 °C 20 85 °C 15 25 °C - 55 °C 10 125 °C 40 35 85 °C 30 25 °C 25 - 55 °C 20 15 V+ = 12 V V- = 0 V VL = 5 V 10 5 - 10 -5 0 5 10 0 15 2 4 6 8 10 12 VD – Drain Voltage (V) VD – Drain Voltage (V) On-Resistance vs. VD and Temperature 100 m 100 V ± = ± 15 V VL = 5 V TA = 25 °C I+ – Supply Current (nA) 10 m 40 ID, IS (pA) 20 45 On-Resistance vs. VD and Temperature ID(on) ID(off) 20 0 IS(off) - 20 - 40 V ± = ± 15 V VL = 5 V 1m 100 µ I+, I- 10 µ IL 1µ 100 n 10 n - 60 - 80 - 100 -15 15 50 V ± = ± 15 V VL = 5 V 60 10 On-Resistance vs. VD and Dual Supply Voltage 30 80 5 VD – Drain Voltage (V) On-Resistance vs. VD and Unipolar Power Supply Voltage 5 - 15 0 1n - 10 -5 0 5 10 VD or VS – Drain or Source Voltage (V) Leakage vs. Analog Voltage Document Number: 72107 S-71009–Rev. C, 14-May-07 15 100 p 10 100 1K 10 K 100 K 1M 10 M Input Switching Frequency (Hz) Supply Current vs. Input Switching Frequency www.vishay.com 5 DG417B/418B/419B Vishay Siliconix TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted 100 140 VL = 5 V V ± = ± 15 V VL = 5 V 90 120 80 tON V = 12 V 80 tON V = ± 15 V tOFF V = ± 15 V 60 t ON , t OFF (ns) t ON , t OFF (ns) 100 70 tTRANS- 60 tTRANS+ 50 40 tOFF V = 12 V 40 30 20 - 55 - 35 - 15 5 25 45 65 85 105 20 - 55 125 - 35 - 15 5 140 65 85 105 125 10 V+ = 12 V V– = 0 V VL = 5 V - 10 Loss, OIRR, X TALK (dB) 120 t ON , t OFF (ns) 45 Transition Time vs. Temperature Switching Time vs. Temperature tTRANS- 100 80 tTRANS+ 60 Loss - 30 XTALK OIRR - 50 - 70 V+ = 3 V V– = 0 V RL = 50 - 90 40 20 - 55 - 110 - 35 - 15 5 25 45 65 85 105 125 100 k 1M 10 M Temperature ( C) 100 M 1G Frequency (Hz) Insertation Loss, Off -Isolation Crosstalk vs. Frequency Transition Time vs. Temperature 30 3.0 25 VL = 5 V C = 10 nF 20 Q – Charge Injection (pC) 2.5 VT – Switching Threshold (V) 25 Temperature ( C) Temperature ( C) 2.0 1.5 1.0 15 10 V = ± 15 V 5 0 V+ = 12 V -5 - 10 - 15 - 20 0.5 - 25 0.0 4 6 8 10 12 14 16 18 V+ – Supply Voltage (V) Switching Threshold vs. Supply Voltage www.vishay.com 6 20 - 30 - 15 - 12 -9 -6 -3 0 3 6 9 12 15 VS – Analog Voltage (V) Charge Injection vs. Analog Voltage Document Number: 72107 S-71009–Rev. C, 14-May-07 DG417B/418B/419B Vishay Siliconix TEST CIRCUITS VO is the steady state output with the switch on. +5V + 15 V 3V Logic Input VL tr < 5 ns tf < 5 ns 50 % V+ S 0V D VO 10 V tOFF IN CL 35 pF RL 300 V– GND - 15 V CL (includes fixture and stray capacitance) Switch Input VS Switch Output 0V Note: RL VO = VS VO 90 % tON Logic input waveform is inverted for switches that have the opposite logic sense. RL + rDS(on) Figure 2. Switching Time (DG417B/418B) +5V +1V Logic Input VL VS1 VS2 V+ S1 tr < 5 ns tf < 5 ns 3V 0V D VO S2 RL 300 IN Switch Output V- GND VS1 = VS2 VO CL 35 pF 90 % 0V tD tD CL (includes fixture and stray capacitance) - 15 V Figure 3. Break-Before-Make (DG419B) +5V VL VS1 VS2 + 15 V V+ S1 D VO Logic Input 50 % 0V S2 RL 300 IN GND tr < 5 ns tf < 5 ns 3V tTRANS CL 35 pF tTRANS VS1 V01 V- - 15 V 90 % Switch Output VS2 V02 10 % CL (includes fixture and stray capacitance) VO = VS RL RL + rDS(on) Figure 4. Transition Time (DG419B) Document Number: 72107 S-71009–Rev. C, 14-May-07 www.vishay.com 7 DG417B/418B/419B Vishay Siliconix TEST CIRCUITS Rg +5V + 15 V VL V+ VO VO D S VO IN INX OFF CL 10 nF 3V ON V- GND OFF Q = VO x CL - 15 V Figure 5. Charge Injection +5V + 15 V C C VL VL 50 VO D Rg = 50 S2 RL IN 0 V, 2.4 V IN GND 0.8 V GND V+ S VS RL C D Rg = 50 VO + 15 V C V+ S1 VS +5V V- C C V- - 15 V - 15 V XTALK Isolation = 20 log C = RF bypass Off Isolation = 20 log VO VO VS VS Figure 7. Off isolation Figure 6. Crosstalk +5V + 15 V C C VL V+ S VS D VO Rg = 50 0 V, 2.4 V RL IN GND V- C - 15 V Figure 8. Insertion Loss www.vishay.com 8 Document Number: 72107 S-71009–Rev. C, 14-May-07 DG417B/418B/419B Vishay Siliconix TEST CIRCUITS +5V + 15 V + 15 V C C VL V+ V+ S2 S DG417B/418B IN HP4192A Impedance Analyzer or Equivalent D GND V- C f = 1 MHz S1 DG419B Meter 0 V, 2.4 V NC C 0 V, 2.4 V Meter IN D2 GND HP4192A Impedance Analyzer or Equivalent D1 V- C f = 1 MHz - 15 V - 15 V Figure 9. Source/Drain Capacitances Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?72107. www.vishay.com 9 Document Number: 72107 S-71009–Rev. C, 14-May-07 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1