DG417B, DG418B, DG419B Datasheet

DG417B, DG418B, DG419B
Vishay Siliconix
Precision Monolithic Quad SPST CMOS Analog Switches
DESCRIPTION
FEATURES
The DG417B, DG418B, DG419B monolithic CMOS analog
switches were designed to provide high performance
switching of analog signals. Combining low power, low
leakages, high speed, low on-resistance and small physical
size, the DG417B series is ideally suited for portable and
battery powered industrial and military applications requiring
high performance and efficient use of board space.
•
•
•
•
•
•
To achieve high-voltage ratings and superior switching
performance, the DG417B series is built on Vishay
Siliconix’s high voltage silicon gate (HVSG) process. Breakbefore-make is guaranteed for the DG419B, which is an
SPDT configuration. An epitaxial layer prevents latchup.
BENEFITS
Each switch conducts equally well in both directions when
on, and blocks up to the power supply level when off.
The DG417B and DG418B respond to opposite control logic
levels as shown in the Truth Table.
•
•
•
•
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•
± 15 V analog signal range
On-resistance - RDS(on): 15 Ω
Fast switching action - tON: 110 ns
TTL and CMOS compatible
MSOP-8 and SOIC-8 package
Compliant to RoHS directive 2002/95/EC
Widest dynamic range
Low signal errors and distortion
Break-before-make switching action
Simple interfacing
Reduced board space
Improved reliability
APPLICATIONS
•
•
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•
Precision test equipment
Precision instrumentation
Battery powered systems
Sample-and-hold circuits
Military radios
Guidance and control systems
Hard disk drivers
FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION
DG417B
Dual-In-Line, SOIC-8 and MSOP-8
S
1
8
D
No connect
2
7
V-
GND
3
6
IN
V+
4
5
VL
Top View
TRUTH TABLE
Logic
0
1
Logic "0" ≤ 0.8 V
Logic "1" ≥ 2.4 V
DG417B
ON
OFF
DG418B
OFF
ON
DG419B
Dual-In-Line, SOIC-8 and MSOP-8
TRUTH TABLE - DG419B
D
1
8
S2
S1
2
7
V-
Logic
SW1
SW2
GND
3
6
IN
0
ON
OFF
1
OFF
ON
V+
5
4
Top View
VL
Logic "0" ≤ 0.8 V
Logic "1" ≥ 2.4 V
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 72107
S09-1261-Rev. D, 13-Jul-09
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1
DG417B, DG418B, DG419B
Vishay Siliconix
ORDERING INFORMATION
Temp Range
DG417B, DG418B
Package
8-Pin Plastic MiniDIP
- 40 °C to 85 °C
8-Pin Narrow SOIC
8-Pin MSOP
Part Number
DG417BDJ
DG417BDJ-E3
DG418BDJ
DG418BDJ-E3
DG417BDY
DG417BDY-E3
DG417BDY-T1
DG417BDY-T1-E3
DG418BDY
DG418BDY-E3
DG418BDY-T1
DG418BDY-T1-E3
DG417BDQ-T1-E3
DG418BDQ-T1-E3
DG419B
8-Pin Plastic MiniDIP
DG419BDJ
DG419BDJ-E3
8-Pin Narrow SOIC
DG419BDY
DG419BDY-E3
DG419BDY-T1
DG419BDY-T1-E3
8-Pin MSOP
DG419BDQ-T1-E3
- 40 °C to 85 °C
ABSOLUTE MAXIMUM RATINGS
Parameter
Limit
V-
- 20
V+
20
GND
VL
25
Digital Inputsa, VS, VD
Current, (Any Terminal) Continuous
Current (S or D) Pulsed at 1 ms, 10 % Duty Cycle
Storage Temperature
Power Dissipation (Package)b
Unit
V
(GND - 0.3) to (V+) + 0.3
(V-) - 2 V to (V+) + 2
or 30 mA, whichever occurs first
30
100
- 65 to 150
8-Pin Plastic MiniDIPc
400
8-Pin Narrow SOICc
400
8-Pin MSOPd
400
8-Pin CerDIPe
600
mA
°C
mW
Notes:
a. Signals on SX, DX, or INX exceeding V+ or V- will be clamped by internal diodes. Limit forward diode current to maximum current ratings.
b. All leads welded or soldered to PC board.
c. Derate 5.3 mW/°C above 75 °C.
d. Derate 4 mW/°C above 70 °C.
e. Derate 8 mW/°C above 75 °C.
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Document Number: 72107
S09-1261-Rev. D, 13-Jul-09
DG417B, DG418B, DG419B
Vishay Siliconix
SCHEMATIC DIAGRAM Typical Channel
V+
S
VL
VLevel
Shift/
Drive
VIN
V+
GND
D
V-
Figure 1.
SPECIFICATIONSa
Parameter
Analog Switch
Symbol
Analog Signal Rangee
Drain-Source
On-Resistance
VANALOG
RDS(on)
Test Conditions
Unless Otherwise Specified
V+ = 15 V, V- = - 15 V
VL = 5 V, VIN = 2.4 V, 0.8 Vf
IS = - 10 mA, VD = ± 12.5 V
V+ = 13.5 V, V- = - 13.5 V
IS(off)
Switch Off Leakage Current
ID(off)
V+ = 16.5, V- = - 16.5 V
DG417B
VD = ± 15.5 V, VS = ± 15.5 V DG418B
DG419B
Channel On Leakage Current
ID(on)
V+ = 16.5 V, V- = - 16.5 V
VS = VD = ± 15.5 V
DG417B
DG418B
DG419B
A Suffix
D Suffix
- 55 °C to 125 °C - 40 °C to 85 °C
Temp.b
Full
Room
Full
Room
Full
Room
Full
Room
Full
Room
Full
Room
Full
Typ.c
Min.d
Max.d
Min.d
Max.d
Unit
- 15
- 15
- 0.25
-5
- 0.25
-5
- 0.75
- 12
- 0.4
- 10
- 0.75
- 12
15
25
29
0.25
5
0.25
5
0.75
12
0.4
10
0.75
12
V
- 0.25
- 20
- 0.25
- 20
- 0.75
- 60
- 0.4
- 40
- 0.75
- 60
15
25
34
0.25
20
0.25
20
0.75
60
0.4
40
0.75
60
15
- 0.1
- 0.1
- 0.1
- 0.4
- 0.4
Ω
nA
Digital Control
Input Current, VIN Low
IIL
Full
- 0.5
0.5
- 0.5
0.5
Input Current, VIN High
IIH
Full
- 0.5
0.5
- 0.5
0.5
µA
Dynamic Characteristics
Turn-On Time
tON
Turn-Off Time
tOFF
Transition Time
tTRANS
Break-Before-Make
Time Delay
tD
Charge Injection
Q
Off Isolatione
OIRR
Channel-to-Channel
Crosstalke
XTALK
Document Number: 72107
S09-1261-Rev. D, 13-Jul-09
RL = 300 Ω, CL = 35 pF
VS = ± 10 V, See Switching
Time Test Circuit
DG417B
DG418B
DG417B
DG418B
RL = 300 Ω, CL = 35 pF
DG419B
VS1 = ± 10 V, VS2 = ± 10 V
RL = 300 Ω, CL = 35 pF
DG419B
VS1 = VS2 = ± 10 V
CL = 10 nF
Vgen = 0 V, Rgen = 0 Ω
RL = 50 Ω, CL = 5 pF,
f = 1 MHz
DG419B
Room
Full
Room
Full
Room
Full
53
Room
16
Room
38
Room
- 82
Room
- 88
89
106
80
88
87
96
62
60
3
89
99
80
86
87
93
ns
3
pC
dB
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DG417B, DG418B, DG419B
Vishay Siliconix
SPECIFICATIONSa
Parameter
Dynamic Characteristics
Source Off Capacitancee
Drain Off Capacitancee
Channel On
Capacitancee
Symbol
Test Conditions
Unless Otherwise Specified
V+ = 15 V, V- = - 15 V
VL = 5 V, VIN = 2.4 V, 0.8 Vf
CS(off)
CD(off)
CD(on)
f = 1 MHz, VS = 0 V
f = 1 MHz, VS = 0 V
DG417B
DG418B
DG417B
DG418B
DG419B
A Suffix
D Suffix
- 55 °C to 125 °C - 40 °C to 85 °C
Temp.b
Typ.c
Room
12
Room
12
Room
50
Room
57
Room
Full
Room
Full
Room
Full
Room
Full
0.001
Min.d
Max.d
Min.d
Maxd.
Unit
pF
Power Supplies
Positive Supply Current
I+
Negative Supply Current
I-
Logic Supply Current
IL
Ground Current
V+ = 16.5 V, V- = - 16.5 V
VIN = 0 or 5 V
IGND
- 0.001
1
5
-1
-5
0.001
- 0.001
1
5
-1
-5
1
5
-1
-5
1
5
µA
-1
-5
SPECIFICATIONSa
Parameter
Analog Switch
Symbol
Analog Signal Rangee
Drain-Source
On-Resistance
Dynamic Characteristics
VANALOG
RDS(on)
Turn-On Time
tON
Turn-Off Time
tOFF
Break-Before-Make
Time Delay
tD
Transition Time
tTRANS
Charge Injection
Q
Test Conditions
Unless Otherwise Specified
V+ = 12 V, V- = 0 V
VL = 5 V, VIN = 2.4 V, 0.8 Vf
Temp.b
IS = - 10 mA, VD = 3.8 V
V+ = 10.8 V
Full
Room
Full
Room
Full
Room
Full
RL = 300 Ω, CL = 35 pF
VS = 8 V, See Switching
Time Test Circuit
RL = 300 Ω, CL = 35 pF
A Suffix
D Suffix
- 55 °C to 125 °C - 40 °C to 85 °C
DG419B Room
RL = 300 Ω, CL = 35 pF
VS1 = 0 V, 8 V, VS2 = 8 V, 0 V
CL = 10 nF, Vgen = 0 V, Rgen = 0 Ω
Room
Full
Room
Typ.c
Min.d
Max.d
Min.d
Max.d
Unit
0
12
35
52
0
12
35
45
V
26
125
155
66
73
100
38
62
25
125
143
66
69
ns
25
119
153
95
Ω
119
141
18
pC
Power Supplies
Positive Supply Current
I+
Negative Supply Current
I-
Logic Supply Current
IL
Ground Current
IGND
V+ = 13.2 V, VL = 5.25 V
VIN = 0 or 5 V
Room
Full
0.001
Room
- 0.001
Room
0.001
Room
- 0.001
1
5
-1
-5
1
5
-1
-5
1
5
-1
-5
1
5
µA
-1
-5
Notes:
a. Refer to PROCESS OPTION FLOWCHART.
b. Room = 25 °C, full = as determined by the operating temperature suffix.
c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
d. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this datasheet.
e. Guaranteed by design, not subject to production test.
f. VIN = input voltage to perform proper function.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 72107
S09-1261-Rev. D, 13-Jul-09
DG417B, DG418B, DG419B
Vishay Siliconix
TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted
40
TA = 25 °C
VL = 5 V
RDS(on) - Drain-Source On-Resistance (Ω)
RDS(on) - Drain-Source On-Resistance (Ω)
300
250
200
V+ = 3 V
VL = 3 V
150
100
V+ = 12 V
V+ = 5 V
50
V+ = 15 V
V+ = 8 V
V+ = 20 V
0
0
4
8
12
16
TA = 25 °C
35
30
±5V
25
±8V
20
± 10 V
± 12 V
15
± 15 V
10
± 20 V
5
- 20
20
- 15
- 10
VD - Drain Voltage (V)
On-Resistance vs. VD and Unipolar Power Supply Voltage
RDS(on) - Drain-Source On-Resistance (Ω)
RDS(on) - Drain-Source On-Resistance (Ω)
25
125 °C
20
85 °C
15
25 °C
- 55 °C
10
20
35
85 °C
30
25 °C
25
- 55 °C
20
15
V+ = 12 V
V- = 0 V
VL = 5 V
10
5
- 10
-5
0
5
10
15
0
2
4
6
8
10
12
VD - Drain Voltage (V)
On-Resistance vs. VD and Temperature
100 m
100
V ± = ± 15 V
VL = 5 V
TA = 25 °C
I+ - Supply Current (nA)
10 m
40
ID, IS (pA)
15
125 °C
40
VD - Drain Voltage (V)
ID(on)
ID(off)
20
0
IS(off)
- 20
100 µ
I+, I-
10 µ
IL
1µ
100 n
- 60
10 n
- 80
V ± = ± 15 V
VL = 5 V
1m
- 40
- 100
-15
10
45
On-Resistance vs. VD and Temperature
60
5
50
V ± = ± 15 V
VL = 5 V
80
0
On-Resistance vs. VD and Dual Supply Voltage
30
5
- 15
-5
VD - Drain Voltage (V)
1n
- 10
-5
0
5
10
15
100 p
10
100
1K
10 K
100 K
1M
10 M
VD or VS - Drain or Source Voltage (V)
Input Switching Frequency (Hz)
Leakage vs. Analog Voltage
Supply Current vs. Input Switching Frequency
Document Number: 72107
S09-1261-Rev. D, 13-Jul-09
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DG417B, DG418B, DG419B
Vishay Siliconix
TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted
100
140
VL = 5 V
90
120
80
tON V = 12 V
80
tON V = ± 15 V
60
tOFF V = ± 15 V
t ON , t OFF (ns)
100
t ON , t OFF (ns)
V ± = ± 15 V
VL = 5 V
70
tTRANS-
60
tTRANS+
50
40
tOFF V = 12 V
40
30
20
- 55
- 35
- 15
5
25
45
65
85
105
20
- 55
125
- 35
- 15
25
45
85
105
125
10
140
Loss, OIRR, X TALK (dB)
- 10
tTRANS-
100
Loss
0
V+ = 12 V
V- = 0 V
VL = 5 V
120
80
tTRANS+
60
- 20
- 30
OIRR
- 40
- 50
- 60
- 70
DG417B
V+ = + 15 V
V- = - 15 V
RL = 50 Ω
- 80
40
- 90
20
- 55
- 35
- 15
5
25
45
65
85
105
- 100
100K
125
1M
10M
100M
1G
Temperature ( C)
Frequency (Hz)
Transition Time vs. Temperature
Insertion Loss, Off -Isolation Crosstalk vs. Frequency
3.0
10
Loss
0
VL = 5 V
2.5
- 10
Loss, OIRR, X TALK (dB)
VT - Switching Threshold (V)
65
Transition Time vs. Temperature
Switching Time vs. Temperature
t ON , t OFF (ns)
5
Temperature ( C)
Temperature ( C)
2.0
1.5
1.0
0.5
- 20
- 30
OIRR
- 40
XTALK
- 50
- 60
- 70
DG419B
V+ = + 15 V
V- = - 15 V
RL = 50 Ω
- 80
- 90
0.0
4
6
8
10
12
14
16
18
V+ - Supply Voltage (V)
Switching Threshold vs. Supply Voltage
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20
- 100
100K
1M
10M
100M
1G
Frequency (Hz)
Insertion Loss, Off -Isolation Crosstalk vs. Frequency
Document Number: 72107
S09-1261-Rev. D, 13-Jul-09
DG417B, DG418B, DG419B
Vishay Siliconix
TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted
200
Qinj - Charge Injection (pC)
160
140
200
180
DG417B
CL = 10 nF
160
140
Qinj - Charge Injection (pC)
180
120
100
80
60
40
20
0
V+ = + 15 V
V- = - 15 V
V+ = + 12 V
V- = 0 V
- 20
- 40
120
100
80
V+ = + 15 V
V- = - 15 V
60
40
20
0
V+ = + 12 V
V- = 0 V
- 20
V+ = + 12 V
V- = - 12 V
- 40
V+ = + 12 V
V- = - 12 V
- 60
- 80
- 100
- 15 - 12
-9
-6
-3
- 60
- 80
- 100
0
3
6
9
12
15
- 15 - 12
-9
-6
-3
0
3
6
9
12
Analog Voltage (V)
Analog Voltage (V)
Charge Injection vs. Analog Voltage
(Measured at drain pin)
Charge Injection vs. Analog Voltage
(Measured at source pin)
100
80
60
40
20
0
- 20
- 40
- 60
- 80
- 100
- 120
- 140
- 160
- 180
- 200
- 15 - 12
DG419B
CL = 10 nF
V+ = + 12 V
V- = - 12 V
Qinj - Charge Injection (pC)
Qinj - Charge Injection (pC)
DG417B
CL = 10 nF
V+ = + 12 V
V- = - 0 V
V+ = + 15 V
V- = - 15 V
-9
-6
-3
0
3
6
9
12
15
200
180
DG419B
160
CL = 10 nF
140
120
100
V+ = + 15 V
80
V- = - 15 V
60
40
20
0
- 20
- 40
V+ = + 12 V
- 60
V- = - 12 V
- 80
- 100
- 15 - 12 - 9 - 6 - 3
0
15
V+ = + 12 V
V- = - 0 V
3
6
9
12
Analog Voltage (V)
Analog Voltage (V)
Charge Injection vs. Analog Voltage
(Measured at drain pin)
Charge Injection vs. Analog Voltage
(Measured at source pin)
15
TEST CIRCUITS
VO is the steady state output with the switch on.
+5V
+ 15 V
3V
Logic
Input
VL
V+
S
0V
D
VO
10 V
IN
GND
tr < 5 ns
tf < 5 ns
50 %
V-
CL
35 pF
RL
300
- 15 V
CL (includes fixture and stray capacitance)
RL
VO = VS
RL + R DS(on)
tOFF
Switch
Input
VS
Switch
Output
0V
Note:
VO
90 %
tON
Logic input waveform is inverted for switches that have the
opposite logic sense.
Figure 2. Switching Time (DG417B/418B)
Document Number: 72107
S09-1261-Rev. D, 13-Jul-09
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DG417B, DG418B, DG419B
Vishay Siliconix
TEST CIRCUITS
+5V
+1V
Logic
Input
VL
V+
S1
VS1
tr < 5 ns
tf < 5 ns
3V
0V
D
VO
S2
VS2
RL
300
IN
Switch
Output
V-
GND
VS1 = VS2
VO
CL
35 pF
90 %
0V
tD
tD
CL (includes fixture and stray capacitance)
- 15 V
Figure 3. Break-Before-Make (DG419B)
+5V
VL
+ 15 V
V+
S1
VS1
D
VO
Logic
Input
50 %
0V
S2
VS2
IN
tTRANS
CL
35 pF
RL
300
tr < 5 ns
tf < 5 ns
3V
tTRANS
VS1
V01
V-
GND
90 %
Switch
Output
V02
VS2
- 15 V
10 %
CL (includes fixture and stray capacitance)
RL
VO = VS
RL + rDS(on)
Figure 4. Transition Time (DG419B)
Rg
+5V
+ 15 V
VL
V+
S
VO
D
IN
VO
INX
OFF
CL
10 nF
3V
GND
VO
V-
ON
OFF
Q = VO x CL
- 15 V
Figure 5. Charge Injection
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Document Number: 72107
S09-1261-Rev. D, 13-Jul-09
DG417B, DG418B, DG419B
Vishay Siliconix
TEST CIRCUITS
+5V
+ 15 V
C
C
VL
VL
V+
S
VS
50
RL
IN
0 V, 2.4 V
IN
GND
0.8 V
GND
VO
D
Rg = 50
S2
RL
C
D
Rg = 50
VO
+ 15 V
C
V+
S1
VS
+5V
V-
C
C
V-
- 15 V
- 15 V
XTALK Isolation = 20 log
C = RF bypass
Off Isolation = 20 log
VO
VO
VS
VS
Figure 7. Off isolation
Figure 6. Crosstalk
+5V
+ 15 V
C
C
VL
V+
S
VS
D
VO
Rg = 50
RL
IN
0 V, 2.4 V
GND
V-
C
- 15 V
Figure 8. Insertion Loss
+5V
+ 15 V
+ 15 V
C
C
VL
V+
V+ S2
S
DG417B/418B
IN
HP4192A
Impedance
Analyzer
or Equivalent
D
GND
V-
C
f = 1 MHz
S1
DG419B
Meter
0 V, 2.4 V
NC
C
0 V, 2.4 V
Meter
IN
D2
GND
HP4192A
Impedance
Analyzer
or Equivalent
D1
V-
C
f = 1 MHz
- 15 V
- 15 V
Figure 9. Source/Drain Capacitances
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?72107.
Document Number: 72107
S09-1261-Rev. D, 13-Jul-09
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9
Package Information
Vishay Siliconix
SOIC (NARROW): 8-LEAD
JEDEC Part Number: MS-012
8
6
7
5
E
1
3
2
H
4
S
h x 45
D
C
0.25 mm (Gage Plane)
A
e
B
All Leads
q
A1
L
0.004"
MILLIMETERS
INCHES
DIM
Min
Max
Min
Max
A
1.35
1.75
0.053
0.069
A1
0.10
0.20
0.004
0.008
B
0.35
0.51
0.014
0.020
C
0.19
0.25
0.0075
0.010
D
4.80
5.00
0.189
0.196
E
3.80
4.00
0.150
e
0.101 mm
1.27 BSC
0.157
0.050 BSC
H
5.80
6.20
0.228
0.244
h
0.25
0.50
0.010
0.020
L
0.50
0.93
0.020
0.037
q
0°
8°
0°
8°
S
0.44
0.64
0.018
0.026
ECN: C-06527-Rev. I, 11-Sep-06
DWG: 5498
Document Number: 71192
11-Sep-06
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1
Package Information
Vishay Siliconix
MSOP:
8−LEADS
JEDEC Part Number: MO-187, (Variation AA and BA)
(N/2) Tips)
2X
5
A B C 0.20
N N-1
0.60
0.48 Max
Detail “B”
(Scale: 30/1)
Dambar Protrusion
E
1 2
0.50
N/2
0.60
0.08 M C B S
b
A S
7
Top View
b1
e1
With Plating
e
A
See Detail “B”
c1
0.10 C
-H-
A1
D
6
Seating Plane
c
Section “C-C”
Scale: 100/1
(See Note 8)
Base Metal
-A-
3
See Detail “A”
Side View
0.25
BSC
C
Parting Line
0.07 R. Min
2 Places
Seating Plane
ς
A2
0.05 S
C
E1
-B-
L 4
T
-C-
3
0.95
End View
Detail “A”
(Scale: 30/1)
N = 8L
NOTES:
1.
Die thickness allowable is 0.203"0.0127.
2.
Dimensioning and tolerances per ANSI.Y14.5M-1994.
3.
Dimensions “D” and “E1” do not include mold flash or protrusions, and are
measured at Datum plane -H- , mold flash or protrusions shall not exceed
0.15 mm per side.
4.
Dimension is the length of terminal for soldering to a substrate.
5.
Terminal positions are shown for reference only.
6.
Formed leads shall be planar with respect to one another within 0.10 mm at
seating plane.
7.
The lead width dimension does not include Dambar protrusion. Allowable
Dambar protrusion shall be 0.08 mm total in excess of the lead width
dimension at maximum material condition. Dambar cannot be located on the
lower radius or the lead foot. Minimum space between protrusions and an
adjacent lead to be 0.14 mm. See detail “B” and Section “C-C”.
8.
Section “C-C” to be determined at 0.10 mm to 0.25 mm from the lead tip.
9.
Controlling dimension: millimeters.
10. This part is compliant with JEDEC registration MO-187, variation AA and BA.
11. Datums -A- and -B- to be determined Datum plane -H- .
MILLIMETERS
Dim
Min
Nom
Max
A
A1
A2
b
b1
c
c1
D
E
E1
e
e1
L
N
T
-
-
1.10
0.05
0.10
0.15
0.75
0.85
0.95
0.25
-
0.38
8
0.25
0.30
0.33
8
0.13
-
0.23
0.15
0.18
0.13
3.00 BSC
Note
3
4.90 BSC
2.90
3.00
3.10
3
0.70
4
0.65 BSC
1.95 BSC
0.40
0.55
8
0_
4_
5
6_
ECN: T-02080—Rev. C, 15-Jul-02
DWG: 5867
12. Exposed pad area in bottom side is the same as teh leadframe pad size.
Document Number: 71244
12-Jul-02
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1
Package Information
Vishay Siliconix
PDIP: 8ĆLEAD
8
7
6
5
E1
1
2
Dim
A
A1
B
B1
C
D
E
E1
e1
eA
L
Q1
S
3
E
4
D
S
Q1
A
MILLIMETERS
Min
Max
INCHES
Min
Max
3.81
5.08
0.150
0.200
0.38
1.27
0.015
0.050
0.38
0.51
0.015
0.020
0.89
1.65
0.035
0.065
0.20
0.30
0.008
0.012
9.02
10.92
0.355
0.430
7.62
8.26
0.300
0.325
5.59
7.11
0.220
0.280
2.29
2.79
0.090
0.110
7.37
7.87
0.290
0.310
2.79
3.81
0.110
0.150
1.27
2.03
0.050
0.080
0.76
1.65
0.030
0.065
ECN: S-03946—Rev. E, 09-Jul-01
DWG: 5478
A1
15°
MAX
e1
B1
Document Number: 71259
05-Jul-01
L
B
C
NOTE: End leads may be half leads.
eA
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1
Package Information
Vishay Siliconix
CERDIP: 8ĆLEAD
8
7
6
MILLIMETERS
5
Dim
A
A1
B
B1
C
D
E
E1
e1
eA
L
L1
Q1
S
E
E1
1
2
3
4
D
S
e1
Q1
A
L1
A1
∝
L
INCHES
Min
Max
Min
Max
4.06
5.08
0.160
0.200
0.51
1.14
0.020
0.045
0.38
0.51
0.015
0.020
1.14
1.65
0.045
0.065
0.20
0.30
0.008
0.012
9.40
10.16
0.370
0.400
7.62
8.26
0.300
0.325
6.60
7.62
0.260
0.300
2.54 BSC
0.100 BSC
7.62 BSC
0.300 BSC
3.18
3.81
0.125
0.150
3.18
5.08
0.150
0.200
1.27
2.16
0.050
0.085
0.64
1.52
0.025
0.060
0°
15°
0°
15°
ECN: S-03946—Rev. C, 09-Jul-01
DWG: 5348
B1
B
Document Number: 71280
03-Jul-01
C
eA
∝
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1
Application Note 826
Vishay Siliconix
RECOMMENDED MINIMUM PADS FOR SO-8
0.172
(4.369)
0.028
0.022
0.050
(0.559)
(1.270)
0.152
(3.861)
0.047
(1.194)
0.246
(6.248)
(0.711)
Recommended Minimum Pads
Dimensions in Inches/(mm)
Return to Index
APPLICATION NOTE
Return to Index
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22
Document Number: 72606
Revision: 21-Jan-08
Legal Disclaimer Notice
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Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
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the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
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including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
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Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.
Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free
requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
conform to JEDEC JS709A standards.
Revision: 02-Oct-12
1
Document Number: 91000