DG417B/418B/419B New Product Vishay Siliconix Precision CMOS Analog Switches FEATURES BENEFITS APPLICATIONS D D D D D D D D D D D D D D D D D D "15-V Analog Signal Range On-Resistance—rDS(on): 15 Fast Switching Action—tON: 100 ns TTL and CMOS Compatible MSOP-8 and SOIC-8 Packaging Wide Dynamic Range Low Signal Errors and Distortion Break-Before-Make Switching Action Simple Interfacing Reduced Board Space Improved Reliability Precision Test Equipment Precision Instrumentation Battery Powered Systems Sample-and-Hold Circuits Military Radios Guidance and Control Systems Hard Disk Drives DESCRIPTION The DG417B/418B/419B monolithic CMOS analog switches were designed to provide high performance switching of analog signals. Combining low power, low leakages, high speed, low on-resistance and small physical size, the DG417B series is ideally suited for portable and battery powered industrial and military applications requiring high performance and efficient use of board space. high voltage silicon gate (HVSG) process. Break-before-make is guaranteed for the DG419B, which is an SPDT configuration. An epitaxial layer prevents latchup. To achieve high-voltage ratings and superior switching performance, the DG417B series is built on Vishay Siliconix’s The DG417B and DG418B respond to opposite control logic levels as shown in the Truth Table. Each switch conducts equally well in both directions when on, and blocks up to the power supply level when off. FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION DG417B Dual-In-Line, SOIC-8 and MSOP-8 S 1 8 D NC 2 7 V- GND 3 6 IN V+ 4 5 VL TRUTH TABLE Logic DG417B DG418B 0 ON OFF 1 OFF ON Logic “0” = v 0.8 V, Logic “1” = w 2.4 V Top View DG419B Dual-In-Line, SOIC-8 and MSOP-8 D 1 8 S2 S1 2 7 V- GND V+ 6 3 5 4 IN VL TRUTH TABLEDG419B Logic SW1 SW2 0 ON OFF 1 OFF ON Logic “0” = v 0.8 V, Logic “1” = w 2.4 V Top View Document Number: 72107 S-31538—Rev. B, 11-Aug-03 www.vishay.com 1 DG417B/418B/419B New Product Vishay Siliconix ORDERING INFORMATION Temp Range Package Part Number DG417B/418B DG417BDJ 8 Pin Plastic MiniDIP 8-Pin DG418BDJ DG417BDY - 40 to 85_C 8 Pin Narrow SOIC 8-Pin DG418BDY DG417BDQ 8 Pin MSOP 8-Pin DG418BDQ DG417BAK, DG417BAK/883 - 55 to 125_C 8 Pin CerDIP 8-Pin DG418BAK, DG418BAK/883 DG419B - 40 to 85_C - 55 to 125_C 8-Pin Plastic MiniDIP DG419BDJ 8-Pin Narrow SOIC DG419BDY 8-Pin MSOP DG419BDQ 8-Pin CerDIP DG419BAK, DG419BAK/883 NOTE: SMD product is dual marked with /883 number. ABSOLUTE MAXIMUM RATINGS 8-Pin Plastic MiniDIPc . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8-Pin Narrow SOICc . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8-Pin MSOPd . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8-Pin CerDIPe . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V - . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . - 20 V V+ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 V GND . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25 V VL . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . (GND - 0.3 V) to (V+) + 0.3 V Digital Inputsa VS, VD . . . . . . . . . . . . . . . . . . . . . . . . . . (V - ) - 2 V to (V+) + 2 V or 30 mA, whichever occurs first 400 mW 400 mW 400 mW 600 mW Notes: a. Signals on SX, DX, or INX exceeding V+ or V - will be clamped by internal diodes. Limit forward diode current to maximum current ratings. b. All leads welded or soldered to PC Board. c. Derate 5.3 mW/_C above 75_C d. Derate 4 mW/_C above 70_C e. Derate 8 mW/_C above 75_C Current, (Any Terminal) Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 mA Current (S or D) Pulsed 1 ms, 10% duty cycle . . . . . . . . . . . . . . . . . . 100 mA Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . - 65 to 150_C Power Dissipation (Package)b SCHEMATIC DIAGRAM (TYPICAL CHANNEL) V+ S VL VVIN Level Shift/ Drive V+ GND D V- FIGURE 1. www.vishay.com 2 Document Number: 72107 S-31538—Rev. B, 11-Aug-03 DG417B/418B/419B New Product Vishay Siliconix SPECIFICATIONSa Test Conditions Unless Otherwise Specified Parameter Symbol A Suffix D Suffix - 55 to 125_C - 40 to 85_C V+ = 15 V, V - = - 15 V VL = 5 V, VIN = 2.4 V, 0.8 Vf Tempb IS = - 10 mA, VD = "12.5 V V+ = 13.5 V, V - = - 13.5 V Room Full 15 Room Full - 0.1 - 0.25 - 20 0.25 20 - 0.25 -5 0.25 5 DG417B DG418B Room Full - 0.1 - 0.25 - 20 0.25 20 - 0.25 -5 0.25 5 DG419B Room Full - 0.1 - 0.75 - 60 0.75 60 - 0.75 - 12 0.75 12 DG417B DG418B Room Full - 0.4 - 0.4 - 40 0.4 40 - 0.4 - 10 0.4 10 DG419B Room Full - 0.4 - 0.75 - 60 0.75 60 - 0.75 - 12 0.75 12 Typc Mind Maxd Mind Maxd Unit Analog Switch Analog Signal Rangee Drain-Source On-Resistance VANALOG rDS(on) Full IS(off) Switch Off Leakage g Current ID(off) D( ff) Channel On Leakage Current ID(on) D( ) V = 16 5V 16 5 V V+ 16.5 V, V - = - 16.5 VD = #15.5 V VS = "15.5 V V+ = 16.5 V, V - = - 16.5 V VS = VD = "15.5 V - 15 15 - 15 25 34 15 V 25 29 nA Digital Control Input Current VIN Low IIL Full - 0.5 0.5 - 0.5 0.5 Input Current VIN High IIH Full - 0.5 0.5 - 0.5 0.5 A Dynamic Characteristics Turn-On Time tON Turn-Off Time tOFF Transition Time Break-Before-Make Time Delay RL = 300 , CL = 35 pF VS = "10 V See Switching Time Test Circuit DG417B DG418B Room Full 62 89 106 89 99 DG417B DG418B Room Full 53 80 88 80 86 87 96 87 93 tTRANS RL = 300 , CL = 35 pF VS1 = "10 V, VS2 = #10 V DG419B Room Full 60 tD RL = 300 , CL = 35 pF VS1 = VS2 = "10 V DG419B Room 16 Q CL = 10 nF, Vgen = 0 V, Rgen = 0 Room 4 Off-Isolatione OIRR RL = 50 , CL = 5 nF f = 1 MHz Room - 86 Channel-To-Channel Crosstalke XTALK Room - 87 Source Off Capacitance CS(off) Charge Injection Drain Off Capacitance CD(off) Channel On Capacitance CD(on) DG419B f = 1 MHz, VS = 0 V f = 1 MHz, VS = 0 V Room 12 DG417B DG418B Room 12 DG417B DG418B Room 50 DG419B Room 57 3 ns 3 pC dB pF Power Supplies Positive Supply Current I+ Room Full 0.001 Negative Supply Current I- Room Full - 0.001 Logic Supply Current IL Room Full 0.001 Ground Current Document Number: 72107 S-31538—Rev. B, 11-Aug-03 IGND V+ = 16 16.5 5V V, V - = - 16 16.5 5V VIN = 0 or 5 V Room Full - 0.000 1 1 5 -1 -5 1 5 -1 -5 1 5 -1 -5 1 5 A -1 -5 www.vishay.com 3 DG417B/418B/419B New Product Vishay Siliconix SPECIFICATIONSa FOR UNIPOLAR SUPPLIES Test Conditions Unless Otherwise Specified Parameter Symbol V+ = 12 V, V - = 0 V VL = 5 V, VIN = 2.4 V, 0.8 Vf Tempb IS = - 10 mA, VD = 3.8 V V+ = 10.8 V Room Full Typc A Suffix D Suffix - 55 to 125_C - 40 to 85_C Mind Maxd Mind Maxd Unit Analog Switch Analog Signal Rangee VANALOG Drain-Source On-Resistance rDS(on) Full 0 12 12 V 26 35 52 0 35 45 Room Full 100 125 155 125 143 Room Full 38 66 73 66 69 Room 62 Dynamic Characteristics Turn-On Time tON Turn-Off Time tOFF Break-Before-Make Time Delay RL = 300 , CL = 35 pF, VS = 8 V See Switching Time Test Circuit ns tD RL = 300 , CL = 35 pF DG419B Transition Time tRANS RL = 300 , CL = 35 pF VS1 = 0 V, 8 V, VS2 = 8 V, 0 V Room Full 95 Charge Injection Q CL = 10 nF, Vgen = 0 V, Rgen = 0 Room 3 Room Full 0.001 Room - 0.001 Room 0.001 Room - 0.001 25 25 119 153 119 141 pC Power Supplies Positive Supply Current I+ Negative Supply Current I- Logic Supply Current IL Ground Current IGND V+ = 13.2 V, VL = 5.25 V VIN = 0 or 5 V 1 5 1 5 -1 -5 -1 -5 1 5 1 5 -1 -5 A -1 -5 Notes: a. Refer to PROCESS OPTION FLOWCHART. b. Room = 25_C, Full = as determined by the operating temperature suffix. c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. d. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet. e. Guaranteed by design, not subject to production test. f. VIN = input voltage to perform proper function. www.vishay.com 4 Document Number: 72107 S-31538—Rev. B, 11-Aug-03 DG417B/418B/419B New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. VD and Unipolar Supply Voltage On-Resistance vs. VD and Dual Supply Voltage 40 TA = 25_C VL = 5 V 250 200 V+ = 3.0 V VL = 3 V 150 V+ = 12.0 V 100 V+ = 5.0 V 50 V+ = 15.0 V V+ = 8.0 V V+ = 20.0 V rDS(on) - Drain-Source On-Resistance () rDS(on) - Drain-Source On-Resistance () 300 0 0 4 8 12 16 TA = 25_C 35 30 "5V 25 "8V " 10 V 20 " 12 V " 15 V 15 10 " 20 V 5 - 20 20 - 15 - 10 -5 30 On-Resistance vs. VD and Temperature 25 125_C 85_C 15 25_C - 55_C 10 5 - 15 125_C 40 35 85_C 30 25_C 25 - 55_C 20 15 V+ = 12 V v- = 0 V VL = 5 V 10 -5 0 5 10 15 0 2 6 8 10 12 Supply Current vs. Input Switching Frequency 100 m V" = "15 V VL = 5 V TA = 25_C I+ - Supply Current (nA) 10 m 40 ID, IS (pA) 4 VD - Drain Voltage (V) Leakage vs. Analog Voltage ID(on) ID(off) 20 0 IS(off) - 20 - 40 100 1 1n 0 5 10 VD or VS - Drain or Source Voltage (V) Document Number: 72107 S-31538—Rev. B, 11-Aug-03 15 IL 100 n - 80 -5 I+, I - 10 10 n - 10 V" = "15 V VL = 5 V 1m - 60 - 100 - 15 20 5 - 10 100 60 15 45 VD - Drain Voltage (V) 80 10 On-Resistance vs. VD and Temperature 50 V" = "15 V VL = 5 V 20 5 VD - Drain Voltage (V) rDS(on) - Drain-Source On-Resistance () rDS(on) - Drain-Source On-Resistance () VD - Drain Voltage (V) 0 1 00 p 10 100 1K 10 K 100 K 1M 10 M Input Switching Frequency (Hz) www.vishay.com 5 DG417B/418B/419B New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Transition Time vs. Temperature Switching Time vs. Temperature 100 140 VL = 5 V 90 120 V" = "15 V VL = 5 V 80 tON V = 12 V 80 tON V = "15 V tOFF V = "15 V 60 t ON , t OFF (ns) t ON , t OFF (ns) 100 70 tTRANS - 60 tTRANS+ 50 40 tOFF V = 12 V 40 30 20 - 55 - 35 - 15 5 25 45 65 85 105 20 - 55 125 - 35 - 15 5 Temperature (_C) 45 65 85 105 125 Insertion Loss, Off -Isolation Crosstalk vs. Frequency Transition Time vs. Temperature 140 10 V+ = 12 V v- = 0 V VL = 5 V 100 - 10 Loss, OIRR, X TALK (dB) 120 t ON , t OFF (ns) 25 Temperature (_C) tTRANS - 80 tTRANS+ 60 Loss - 30 XTALK OIRR - 50 - 70 V+ = 3 V V- = 0 V RL = 50 - 90 40 20 - 55 - 110 - 35 - 15 5 25 45 65 85 105 125 100 k 1M 100 M 10 M 1G Frequency (Hz) Temperature (_C) Charge Injection vs. Analog Voltage Switching Threshold vs. Supply Voltage 30 3.0 25 VT - Switching Threshold (V) Q - Charge Injection (pC) VL = 5 V 2.5 2.0 1.5 1.0 20 C = 10 nF 15 10 V = "15 V 5 0 V+ = 12 V -5 - 10 - 15 - 20 0.5 - 25 0.0 4 6 8 10 12 14 V+ - Supply Voltage (V) www.vishay.com 6 16 18 20 - 30 - 15 - 12 -9 -6 -3 0 3 6 9 12 15 VS - Analog Voltage (V) Document Number: 72107 S-31538—Rev. B, 11-Aug-03 DG417B/418B/419B New Product Vishay Siliconix TEST CIRCUITS VO is the steady state output with the switch on. +5 V +15 V 3V Logic Input V+ VL S "10 V tr <5 ns tf <5 ns 50% 0V D VO tOFF IN RL 300 V- GND CL 35 pF - 15 V CL (includes fixture and stray capacitance) Switch Input VS Switch Output 0V Note: RL VO = VS VO 90% tON Logic input waveform is inverted for switches that have the opposite logic sense. RL + rDS(on) FIGURE 2. Switching Time (DG417B/418B) +5 V +15 V Logic Input VL VS1 VS2 V+ S1 tr <5 ns tf <5 ns 3V 0V D VO S2 RL 300 IN GND VS1 = VS2 VO CL 35 pF Switch Output V- 90% 0V tD tD CL (includes fixture and stray capacitance) - 15 V FIGURE 3. Break-Before-Make (DG419B) +5 V VL VS1 VS2 +15 V V+ S1 D VO Logic Input 50% 0V S2 RL 300 IN GND tr <5 ns tf <5 ns 3V tTRANS CL 35 pF tTRANS VS1 V01 V- - 15 V 90% Switch Output VS2 V02 10% CL (includes fixture and stray capacitance) VO = VS RL RL + rDS(on) FIGURE 4. Transition Time (DG419B) Document Number: 72107 S-31538—Rev. B, 11-Aug-03 www.vishay.com 7 DG417B/418B/419B New Product Vishay Siliconix TEST CIRCUITS Rg +5 V +15 V VL V+ S VO VO D VO IN INX OFF CL 10 nF 3V ON V- GND OFF Q = VO x CL - 15 V FIGURE 5. Charge Injection +5 V +15 V C C +5 V VL S1 VS C D C Rg = 50 VL 50 VO V+ S VS S2 RL +15 V V+ VO D Rg = 50 0V, 2.4 V IN RL IN 0.8 V GND GND C V- C = RF bypass C - 15 V - 15 V XTALK Isolation = 20 log V- VO Off Isolation = 20 log VO VS VS FIGURE 7. Off Isolation FIGURE 6. Crosstalk (DG419B) +5 V +15 V C C VL V+ S VS D VO Rg = 50 0V, 2.4 V RL IN GND V- C - 15 V FIGURE 8. Insertion Loss www.vishay.com 8 Document Number: 72107 S-31538—Rev. B, 11-Aug-03 DG417B/418B/419B New Product Vishay Siliconix TEST CIRCUITS +5 V +15 V +15 V C C VL V+ S DG417B/418B V+ S2 IN HP4192A Impedance Analyzer or Equivalent D GND V- C f = 1 MHz S1 DG419B Meter 0 V, 2.4 V NC C 0 V, 2.4 V Meter IN D2 GND - 15 V HP4192A Impedance Analyzer or Equivalent D1 VC f = 1 MHz - 15 V FIGURE 9. Source/Drain Capacitances Document Number: 72107 S-31538—Rev. B, 11-Aug-03 www.vishay.com 9