2.4 GHz High-Efficiency, High-Gain Power Amplifier Module SST12LP17E A Microchip Technology Company Product Brief The SST12LP17E is a 2.4 GHz fully-integrated, high-efficiency Power Amplifier module based on the highly-reliable InGaP/GaAs HBT technology and designed in compliance with IEEE 802.11b/g/n applications. It typically provides 29 dB gain with 28% power-added efficiency. The SST12LP17E has excellent linearity while meeting 802.11g spectrum mask at 21.5 dBm. The SST12LP17E also features easy board-level usage, along with high-speed power-up/-down control through a single combined reference voltage pin, and is offered in both 8-contact USON and 8-contact X2SON packages. Features Block Diagram • Input/Output ports matched to 50 internally and DC decoupled VCC1 VCC2 • High gain: – Typically 29 dB gain across 2.4–2.5 GHz • High linear output power (at 3.3V): RFIN – >24 dBm P1dB – Meets 802.11g OFDM ACPR requirement up to 21.5 dBm – ~3% added EVM up to 18 dBm for 54 Mbps 802.11g signal – Meets 802.11b ACPR requirement up to 22.5 dBm • High power-added efficiency/Low operating current for both 802.11b/g/n applications Output Match Input Match RFOUT Bias Circuit – ~28% @ POUT = 21.5 dBm for 802.11g – ~33% @ POUT = 22.5 dBm for 802.11b VCCb • Low shut-down current (~2 µA) VREF DET 75009 B1.1 • Delivers excellent performance at low temperature down to 2.7 V bias voltage. • Limited variation over temperature Product Ordering – ~2 dB gain variation between -40°C to +85°C – ~1 dB power variation between -40°C to +85°C • Temperature and load insensitive on-chip power detector – >15 dB dynamic range Valid combinations for SST12LP17E SST12LP17E-QU8E SST12LP17E-XX8E • Packages available SST12LP17E Evaluation Kits – 8-contact USON – 2mm x 2mm x 0.550mm – 8-contactX2SON – 2mm x 2mm x 0.375mm • All non-Pb (lead-free) devices are RoHS compliant Applications • WLAN (IEEE 802.11b/g/n) SST12LP17E-QU8E-K SST12LP17E-XX8E-K Note: Valid combinations are those products in mass production or will be in mass production. Consult your SST sales representative to confirm availability of valid combinations and to determine availability of new combinations. • Home RF • Cordless phones • 2.4 GHz ISM wireless equipment ©2012 Silicon Storage Technology, Inc. www.microchip.com DS75009B 05/12 2.4 GHz High-Efficiency, High-Gain Power Amplifier Module SST12LP17E A Microchip Technology Company Product Brief Contact Information Thank you for your interest in Microchip RF products. The data sheet for this device contains proprietary information. To obtain a copy of the data sheet, contact your local Microchip sales representative or distributor at the link below. Global Sales and Distribution Table 1:Revision History Revision A B Description • • Initial release of Product Brief Added package XX8E Date Jun 2011 May 2012 ISBN:978-1-62076-287-5 © 2012 Silicon Storage Technology, Inc–a Microchip Technology Company. All rights reserved. SST, Silicon Storage Technology, the SST logo, SuperFlash, MTP, and FlashFlex are registered trademarks of Silicon Storage Technology, Inc. MPF, SQI, Serial Quad I/O, and Z-Scale are trademarks of Silicon Storage Technology, Inc. All other trademarks and registered trademarks mentioned herein are the property of their respective owners. Specifications are subject to change without notice. Refer to www.microchip.com for the most recent documentation. For the most current package drawings, please see the Packaging Specification located at http://www.microchip.com/packaging. Memory sizes denote raw storage capacity; actual usable capacity may be less. SST makes no warranty for the use of its products other than those expressly contained in the Standard Terms and Conditions of Sale. For sales office locations and information, please see www.microchip.com. Silicon Storage Technology, Inc. A Microchip Technology Company www.microchip.com ©2012 Silicon Storage Technology, Inc. DS75009B 2 05/12