PJQMS05 SERIES QUAD TVS/ZENER ARRAY FOR ESD AND LATCH-UP PROTECTION This Quad TVS/Zener Array family have been designed to Protect Sensitive Equipment against ESD and to prevent Latch-Up events in CMOS circuitry operating at 5V, 12V, 15V and 24V. This TVS array offers an integrated solution to protect up to 4 data lines where the board space is a premium. 7 SPECIFICATION FEATURES 350W Power Dissipation (8x20µsec Waveform) Low Leakage Current, Maximum of 5µA at rated voltage Very Low Clamping Voltage 4 3 5 2 6 1 IEC61000-4-2 ESD 20kV air, 15kV Contact Compliance New SMT package QFN 2mm x 2mm (Height 0.75mm) Compatible with the SOT363 footprint. 7 7 4 5 APPLICATIONS 6 3 Personal Digital Assistant (PDA) SIM Card Port Protection (Mobile Phone) 2 1 Portable Instrumentation Mobile Phones and Accessories QFN 2X2 Bottom View Memory Card Port Protection MAXIMUM RATINGS (Per Device) Symbol Value Units Peak Pulse Power (8x20µsec Waveform) P pp 350 W ESD Voltage (HBM) V ESD >25 kV Operating Temperature Range TJ -50 to +125 °C Storage Temperature Range Tstg -50 to +150 °C Typical Max Units 5 V Rating ELECTRICAL CHARACTERISTICS (Per Device) Tj = 25°C PJQMS05 Parameter Reverse Stand-Off Voltage Conditions Symbol Min VWRM Reverse Breakdown Voltage VBR Reverse Leakage Current IR VR = 5V 5 µA Clamping Voltage (8x20µsec) Vcl I pp = 5A 9.8 V Clamping Voltage (8x20µsec) Vcl I pp = 24A 13 V Off State Junction Capacitance Cj 0 Vdc Bias f = 1MHz Between I/O pins and pin 7 225 pF Off State Junction Capacitance Cj 5 Vdc Bias f = 1MHz Between I/O pins and pin 7 125 pF 4/19/2005 I BR = 1mA Page 1 6 V www.panjit.com PJQMS05 SERIES ELECTRICAL CHARACTERISTICS (Per Device) Tj = 25°C PJQMS12 Parameter Reverse Stand-Off Voltage Symbol Conditions Min Typical VWRM Reverse Breakdown Voltage VBR I BR = 1mA Reverse Leakage Current IR VR = 12V Clamping Voltage (8x20µsec) Vcl I pp = 5A Clamping Voltage (8x20µsec) Vcl I pp = 15A Off State Junction Capacitance Cj 0 Vdc Bias f = 1MHz Between I/O pins and pin 7 Max Units 12 V 13.3 V 1 20 µA V 25 V 100 pF PJQMS15 Parameter Reverse Stand-Off Voltage Symbol Conditions Min Typical VWRM Reverse Breakdown Voltage VBR I BR = 1mA Reverse Leakage Current IR VR = 15V Clamping Voltage (8x20µsec) Vcl Clamping Voltage (8x20µsec) Off State Junction Capacitance Max Units 15 V 16.7 V 1 µA I pp = 5A 24 V Vcl I pp = 12A 29 V Cj 0 Vdc Bias f = 1MHz Between I/O pins and pin 7 80 pF Max Units 24 V PJQMS24 Parameter Reverse Stand-Off Voltage Symbol Conditions VWRM Reverse Breakdown Voltage VBR I BR = 1mA Reverse Leakage Current IR VR = 24V Clamping Voltage (8x20µsec) Vcl Clamping Voltage (8x20µsec) Vcl Off State Junction Capacitance 4/19/2005 Min Cj Typical 26.7 V 1 I pp = 5A 40 I pp = 8A µA V 44 V 0 Vdc Bias f = 1MHz Between I/O pins and pin 7 60 pF Page 2 www.panjit.com PJQMS05 SERIES TYPICAL CHARACTERISTICS TJ = 25°C unless otherwise noted Surge Pulse Waveform Definition Non-Repetitive Peak Pulse Power vs Pulse Time 110 100 90 80 70 60 50 40 30 20 10 0 1000 50% of Ipp @ 20µs Rise time 10-90% - 8µs 0 5 10 15 20 25 30 Peak Pulse Power - Ppp (W) Percent of Ipp Pulse Waveform 100 10 1 0.1 0.01 1 10 100 1000 tim e, µsec Pulse Duration, µsec 45 40 35 30 25 20 15 10 5 0 Off-State Capacitance per Device - 1MHz PJSMS24 PJQMS24 Capacitance, pF Clamping voltage, V Clamping Voltage vs. Peak current PJS MS15 PJQMS15 PJSMS12 PJQMS12 PJQMS05 PJSMS05 0 5 10 15 20 25 30 Ipp, A (8/20µsec) 4/19/2005 200 180 160 140 120 100 80 60 40 20 0 PJQMS05 PJSMS05 PJQMS12 PJSMS12 0 1 PJQMS15 PJSMS15 2 PJQMS24 PJSMS24 3 4 Bias, Vdc Page 3 www.panjit.com 5 PJSMS05 SERIES TYPICAL APPLICATION EXAMPLE AND PACKAGE DIMENSIONS (in mm) 7 4 5 7 6 3 4 3 5 2 6 1 2 SUGGESTED PAD LAYOUT 1 7 I/O Data Line 1 I/O Data Line 2 I/O Data Line 3 I/O Data Line 4 Note: pin 2 and pin 7 could be fused with the pin 7 in order to make ground connection to these pins. 0.65mm 2.0 ± 0.05mm 0.25 ± 0.05mm 1.4 ± 0.05mm 2.0 ± 0.05 mm 1.550mm Ref. 0.35 ± 0.05 mm 0.8 ± 0.05 mm 0.75 ± 0.025 mm 0.203 ± 0.025 mm 4/19/2005 Page 4 www.panjit.com