DG408L, DG409L Datasheet

DG408L, DG409L
www.vishay.com
Vishay Siliconix
Precision 8-Ch / Dual 4-Ch Low Voltage Analog Multiplexers
DESCRIPTION
FEATURES
The DG408L, DG409L are low voltage pin-for-pin
compatible companion devices to the industry standard
DG408, DG409 with improved performance.
• Pin-for-pin compatibility with DG408, DG409
• 2.7 V to 12 V single supply or ± 3 V to ± 6 V dual
Available
supply operation
• Lower on-resistance: RDS(on) - 17  typ.
Available
• Fast switching: tON - 38 ns, tOFF - 18 ns
• Break-before-make guaranteed
Available
• Low leakage: IS(OFF) - 0.2 nA max.
• Low charge injection: 1 pC
• TTL, CMOS, LV logic (3 V) compatible
• 82 dB off-isolation at 1 MHz
• 2000 V ESD protection (HBM)
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
Using BiCMOS wafer fabrication technology allows the
DG408L, DG409L to operate on single and dual supplies.
Single supply voltage ranges from 3 V to 12 V while dual
supply operation is recommended with ± 3 V to ± 6 V.
The DG408L is an 8 channel single-ended analog
multiplexer designed to connect one of eight inputs to a
common output as determined by a 3 bit binary address (A0,
A1, A2). The DG409L is a dual 4 channel differential analog
multiplexer designed to connect one of four differential
inputs to a common dual output as determined by its 2 bit
binary address (A0, A1). Break-before-make switching action
to protect against momentary crosstalk between adjacent
channels.
The DG408L, DG409L provides lower on-resistance, faster
switching time, lower leakage, less power consumption, and
higher off-isolation than the DG408, DG409.
Note
* This datasheet provides information about parts that are
RoHS-compliant and / or parts that are non-RoHS-compliant. For
example, parts with lead (Pb) terminations are not RoHS-compliant.
Please see the information / tables in this datasheet for details.
BENEFITS
•
•
•
•
High accuracy
Single and dual power rail capacity
Wide operating voltage range
Simple logic interface
APPLICATIONS
•
•
•
•
•
•
•
Data acquisition systems
Battery operated equipment
Portable test equipment
Sample and hold circuits
Communication systems
SDSL, DSLAM
Audio and video signal routing
FUNCTIONAL BLOCK DIAGRAMS AND PIN CONFIGURATIONS
DG408L
Dual-In- Line, SOIC, and TSSOP
A0
EN
VS1
S2
S3
S4
D
16
1
2
Decoders/Drivers
15
3
14
4
13
5
12
6
11
7
10
8
9
Top View
S16-0276-Rev. J, 22-Feb-16
DG409L
Dual-In- Line, SOIC, and TSSOP
A1
A0
A2
EN
GND
V-
V+
S1a
S5
S2a
S6
S3a
S7
S4a
S8
Da
16
1
2
Decoders/Drivers
15
3
14
4
13
5
12
6
11
7
10
8
9
A1
GND
V+
S1b
S2b
S3b
S4b
Db
Top View
Document Number: 71342
1
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
DG408L, DG409L
www.vishay.com
Vishay Siliconix
TRUTH TABLE (DG408L)
TRUTH TABLE (DG409L)
A2
A1
A0
EN
ON SWITCH
A1
A0
EN
ON SWITCH
X
X
X
0
None
X
X
0
None
0
0
0
1
1
0
0
1
1
0
0
1
1
2
0
1
1
2
0
1
0
1
3
1
0
1
3
0
1
1
1
4
1
1
1
4
1
0
0
1
5
1
0
1
1
6
1
1
0
1
7
1
1
1
1
8
Logic “0” = VAL  0.8 V
Logic “1” = VAH  2.4 V
X = do not care
Note
• For low and high voltage levels for VAX and VEN consult “Digital Control” parameters for specific V+ operation.
ORDERING INFORMATION (DG408L)
ORDERING INFORMATION (DG409L)
TEMP. RANGE
TEMP. RANGE
PACKAGE
16-pin SOIC
-40 °C to +85 °C
16-pin TSSOP
PART NUMBER
DG408LDY
DG408LDY-E3
DG408LDY-T1
DG408LDY-T1-E3
PACKAGE
16-pin SOIC
-40 °C to +85 °C
DG408LDQ
DG408LDQ-E3
DG408LDQ-T1
DG408LDQ-T1-E3
16-pin TSSOP
PART NUMBER
DG409LDY
DG409LDY-E3
DG409LDY-T1
DG409LDY-T1-E3
DG409LDQ
DG409LDQ-E3
DG409LDQ-T1
DG409LDQ-T1-E3
ABSOLUTE MAXIMUM RATINGS
PARAMETER
LIMIT
Voltage Referenced V+ to V- e
GND
7
Digital Inputs a, VS, VD
30
Peak Current, S or D (pulsed at 1 ms, 10 % duty cycle max.)
100
Power Dissipation (package) b
V
(V-) - 0.3 to (V) + 0.3
Current (any terminal)
Storage Temperature
UNIT
14
(A suffix)
-65 to +150
(D suffix)
-65 to +125
16-pin plastic TSSOP c
650
16-pin narrow SOIC c
600
16-pin CerDIP d
900
LCC-20 e
750
mA
°C
mW
Notes
a. Signals on SX, DX, AX, or EN exceeding V+ or V- will be clamped by internal diodes. Limit forward diode current to maximum current ratings.
b. All leads soldered or welded to PC board.
c. Derate 7.6 mW/°C above 75 °C.
d. Derate 12 mW/°C above 75 °C
e. Derate 10 mW/°C above 75 °C
S16-0276-Rev. J, 22-Feb-16
Document Number: 71342
2
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
DG408L, DG409L
www.vishay.com
Vishay Siliconix
SPECIFICATIONS (Single Supply 12 V)
PARAMETER
SYMBOL
TEST CONDITIONS
UNLESS OTHERWISE
SPECIFIED
V+ = 12 V, ± 10 %, V- = 0 V
VEN = 0.8 V or 2.4 V f
A SUFFIX
D SUFFIX
-55 °C to +125 °C -40 °C to +85 °C
TEMP. b
TYP. d
UNIT
MIN. c
MAX. c
MIN. c
MAX. c
Analog Switch
Analog Signal Range e
Drain-Source
On-Resistance
RDS(on) Matching
Between Channels g
On-Resistance Flatness i
Switch Off Leakage
Current a
VANALOG
RDS(on)
RDS
RFLAT(on)
IS(off)
ID(off)
Channel On Leakage
Current a
ID(on)
Full
-
0
12
0
12
VD = 10.8 V, VD = 2 V or 9 V,
IS = 10 mA,
sequence each switch on
Room
17
-
29
-
29
Full
-
-
38
-
35
VD = 10.8 V, VD = 2 V or 9 V,
IS = 10 mA,
Room
1
-
3
-
3
Room
3
-
7
VEN = 0 V, VD = 11 V or 1 V,
VS = 1 V or 11 V
VS = VD = 1 V or 11 V
V

7
Room
-
-1
1
-1
1
Full
-
-15
15
-10
10
Room
-
-1
1
-1
1
Full
-
-15
15
-10
10
Room
-
-1
1
-1
1
Full
-
-15
15
-10
10
nA
Digital Control
Logic High Input Voltage
VINH
Full
-
2.4
-
2.4
-
Logic Low Input Voltage
VINL
Full
-
-
0.8
-
0.8
Input Current
IIN
VAX = VEN = 2.4 V or 0.8 V
Full
-
-1.5
1.5
-1
1
30
-
60
-
60
tTRANS
VS1 = 8 V, VS8 = 0 V, (DG408L)
VS1b = 8 V, VS4b = 0 V, (DG409L)
see figure 2
Room
Transition Time
Full
-
-
68
-
65
Break-Before-Make Time
tOPEN
VS(all) = VDA = 5 V,
see figure 4
Room
11
1
-
1
-
Full
-
-
-
-
-
Room
38
-
55
-
55
V
μA
Dynamic Characteristics
Enable Turn-On Time
Enable Turn-Off Time
Charge Injection e
tON(EN)
tOFF(EN)
Q
Off Isolation e, h
OIRR
Crosstalk e
XTALK
VAX = 0 V, VS1 = 5 V (DG408L)
VAX = 0 V, VS1b = 5 V (DG409L)
see figure 3
CL = 1 nF, VGEN = 0 V,
RGEN = 0 
f = 100 kHz, RL = 1 k
Full
-
-
60
-
60
Room
18
-
25
-
25
Full
-
-
30
-
30
Room
1
-
5
-
5
Room
-70
-
-
-
-
Room
-82
-
-
-
-
ns
pC
dB
Source Off Capacitance e
CS(off)
f = 1 MHz, VS = 0 V, VEN = 0 V
Room
7
-
-
-
-
Drain Off Capacitance e
CD(off)
f = 1 MHz, VD = 2.4 V, VEN = 0 V
Room
20
-
-
-
-
Drain On Capacitance e
CD(on)
f = 1 MHz, VD = 0 V, VEN = 2.4 V
(DG409L only)
Room
31
-
-
-
-
-
3
12
3
12
V
VEN = VA = 0 V or 5 V
Room
0.2
-
0.7
-
0.7
μA
pF
Power Supplies
Power Supply Range
V+
Power Supply Current
I+
Notes
a. Leakage parameters are guaranteed by worst case test condition and not subject to production test.
b. Room = 25 °C, Full = as determined by the operating temperature suffix.
c. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.
d. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
e. Guaranteed by design, not subject to production test.
f. VIN = input voltage to perform proper function.
g. RDS(on) = RDS(on) max. - RDS(on) min.
h. Worst case isolation occurs on Channel 4 do to proximity to the drain pin.
i. RDS(on) flatness is measured as the difference between the minimum and maximum measured values across a defined Analog signal.
S16-0276-Rev. J, 22-Feb-16
Document Number: 71342
3
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
DG408L, DG409L
www.vishay.com
Vishay Siliconix
SPECIFICATIONS (Dual Supply V+ = 5 V, V - = -5 V)
PARAMETER
SYMBOL
TEST CONDITIONS
UNLESS OTHERWISE
SPECIFIED
V+ = 5 V, ± 10 %, V- = -5 V
VEN = 0.6 V or 2.4 V f
A SUFFIX
D SUFFIX
-55 °C to +125 °C -40 °C to +85 °C
TEMP. b
TYP. d
UNIT
MIN. c
MAX. c
MIN. c
MAX. c
Analog Switch
Analog Signal Range e
Drain-Source
On-Resistance
VANALOG
RDS(on)
Switch Off Leakage
Current a
IS(off)
ID(off)
Channel On Leakage
Current a
ID(on)
VD = ± 3.5 V, IS = 10 mA,
sequence each switch on
V+ = 5.5, V- = 5.5 V
VEN = 0 V, VD = ± 4.5 V,
VS = ± 4.5 V
V+ = 5.5 V, V- = -5.5 V,
VEN = 2.4 V, VD = ± 4.5 V,
VS = ± 4.5 V
Full
-
-5
5
-5
5
V
Room
20
-
40
-
40
Full
-
-
50
-
50

Room
-
-1
1
-1
1
Full
-
-15
15
-10
10
Room
-
-1
1
-1
1
Full
-
-15
15
-10
10
Room
-
-1
1
-1
1
Full
-
-15
15
-10
10
nA
Digital Control
Logic High Input Voltage
VINH
Full
-
2.4
-
2.4
-
Logic Low Input Voltage
VINL
Full
-
-
0.6
-
0.6
Input Current a
IIN
VAX = VEN = 2.4 V or 0.6 V
Full
-
-1.5
1.5
-1
1
30
-
60
-
60
tTRANS
VS1 = 3.5 V, VS8 = 0 V, (DG408L)
VS1b = 3.5 V, VS4b = 0 V, (DG409L)
see figure 2
Room
Transition Time e
Full
-
-
78
-
65
Break-Before-Make Time e
tOPEN
VS(all) = VDA = 3.5 V,
see figure 4
Room
8
1
-
1
-
Full
-
-
-
-
-
Room
25
-
55
-
55
Full
-
-
68
-
60
Room
20
-
40
-
40
Full
-
-
50
-
45
V
μA
Dynamic Characteristics
Time e
tON(EN)
Enable Turn-Off Time e
tOFF(EN)
Enable Turn-On
VAX = 0 V, VS1 = 3.5 V (DG408L)
VAX = 0 V, VS1b = 3.5 V (DG409L)
see figure 3
Source Off Capacitance e
CS(off)
f = 1 MHz, VS = 0 V, VEN = 0 V
Room
6
-
-
-
-
Drain Off Capacitance e
CD(off)
f = 1 MHz, VD = 0 V, VEN = 0 V
Room
15
-
-
-
-
Drain On Capacitance e
CD(on)
f = 1 MHz, VD = 0 V, VEN = 2.4 V
Room
29
-
-
-
-
ns
pF
Notes
a. Leakage parameters are guaranteed by worst case test condition and not subject to production test.
b. Room = 25 °C, full = as determined by the operating temperature suffix.
c. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this datasheet.
d. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
e. Guaranteed by design, not subject to production test.
f. VIN = input voltage to perform proper function.
g. RDS(on) = RDS(on) max. - RDS(on) min.
h. Worst case isolation occurs on channel 4 do to proximity to the drain pin.
i. RDS(on) flatness is measured as the difference between the minimum and maximum measured values across a defined Analog signal.
S16-0276-Rev. J, 22-Feb-16
Document Number: 71342
4
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
DG408L, DG409L
www.vishay.com
Vishay Siliconix
SPECIFICATIONS (Single Supply 5 V)
PARAMETER
SYMBOL
TEST CONDITIONS
UNLESS OTHERWISE
SPECIFIED
V+ = 5 V, ± 10 %, V- = 0 V
VEN = 0.6 V or 2.4 V f
A SUFFIX
D SUFFIX
-55 °C to +125 °C -40 °C to +85 °C
TEMP. b
TYP. d
UNIT
MIN. c
MAX. c
MIN. c
MAX. c
Analog Switch
Analog Signal Range e
Drain-Source
On-Resistance
VANALOG
RDS(on)
RDS(on) Matching Between
Channels g
RDS
On-Resistance Flatness i
RFLAT(on)
Switch Off Leakage
Current a
IS(off)
ID(off)
Channel On Leakage
Current a
ID(on)
Full
-
0
5
0
5
V+ = 4.5 V, VD or VS = 1 V or 3.5 V,
IS = 5 mA
Room
35
-
49
-
40
Full
-
-
62
-
62
V+ = 4.5 V, VD = 1 V or 3.5 V,
IS = 5 mA
Room
1.5
-
3
-
3
V+ = 5.5 V, VS = 1 V or 4 V,
VD = 4 V or 1 V
V+ = 5.5 V, VD = VS = 1 V or 4 V,
sequence each switch on
Room
-
-
4
-
4
Room
-
-1
1
-1
1
10
Full
-
-15
15
-10
Room
-
-1
1
-1
1
Full
-
-15
15
-10
10
Room
-
-1
1
-1
1
Full
-
-15
15
-10
10
V

nA
Digital Control
Logic High Input Voltage
VINH
Logic Low Input Voltage
VINL
Input Current a
V+ = 5 V
Full
-
2.4
-
2.4
-
Full
-
-
0.6
-
0.6
IIN
VAX = VEN = 2.4 V or 0.6 V
Full
-
-1.5
1.5
-1
1
VS1 = 3.5 V, VS8 = 0 V, (DG408L)
VS1b = 3.5 V, VS4b = 0 V, (DG409L)
see figure 2
Room
44
-
125
-
125
tTRANS
Full
-
-
138
-
135
VS(all) = VDA = 3.5 V,
see figure 4
Room
17
1
-
1
-
V
μA
Dynamic Characteristics
Transition Time e
Break-Before-Make Time e
Enable Turn-On Time e
Enable Turn-Off Time e
Charge Injection e
tOPEN
tON(EN)
tOFF(EN)
Q
Off Isolation e, h
OIRR
Crosstalk e
XTALK
VAX = 0 V, VS1 = 3.5 V (DG408L)
VAX = 0 V, VS1b = 3.5 V (DG409L)
see figure 3
CL = 1 nF, RGEN = 0 ,
VGEN = 0 V
f = 100 kHz, RL = 1 k
Full
-
-
-
-
-
Room
43
-
60
-
60
Full
-
-
70
-
65
Room
26
-
45
-
45
Full
-
-
60
-
50
Room
-1
-
-
-
-
Room
-70
-
-
-
-
Room
-80
-
-
-
-
Source Off Capacitance e
CS(off)
f = 1 MHz, VS = 0 V, VEN = 0 V
Room
8
-
-
-
-
Drain Off Capacitance e
CD(off)
f = 1 MHz, VD = 0 V, VEN = 0 V
Room
21
-
-
-
-
Drain On Capacitance e
CD(on)
f = 1 MHz, VD = 0 V, VEN = 2.4 V
Room
32
-
-
-
-
ns
pC
dB
pF
Notes
a. Leakage parameters are guaranteed by worst case test condition and not subject to production test.
b. Room = 25 °C, full = as determined by the operating temperature suffix.
c. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.
d. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
e. Guaranteed by design, not subject to production test.
f. VIN = input voltage to perform proper function.
g. RDS(on) = RDS(on) max. - RDS(on) min.
h. Worst case isolation occurs on channel 4 do to proximity to the drain pin.
i. RDS(on) flatness is measured as the difference between the minimum and maximum measured values across a defined Analog signal.
S16-0276-Rev. J, 22-Feb-16
Document Number: 71342
5
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
DG408L, DG409L
www.vishay.com
Vishay Siliconix
SPECIFICATIONS (Single Supply 3 V)
PARAMETER
SYMBOL
TEST CONDITIONS
UNLESS OTHERWISE
SPECIFIED
V+ = 3 V, ± 10 %, V- = 0 V
VEN = 0.4 V or 2 V f
A SUFFIX
D SUFFIX
-55 °C to +125 °C -40 °C to +85 °C
TEMP. b
TYP. d
UNIT
MIN. c
MAX. c
MIN. c
MAX. c
Analog Switch
Analog Signal Range e
VANALOG
Drain-Source
On-Resistance
RDS(on)
IS(off)
Switch Off Leakage
Current a
ID(off)
Channel On Leakage
Current a
ID(on)
V+ = 2.7 V, VD = 0.5 or 2.2 V,
IS = 5 mA
V+ = 3.3 V, VS = 2 or 1 V,
VD = 1 or 2 V
V+ = 3.3 V, VD = VS = 1 V or 2 V,
sequence each switch on
Full
-
0
3
0
3
V
Room
60
-
80
-
80
Full
-
-
105
-
100

Room
-
-1
1
-1
1
Full
-
-15
15
-10
10
Room
-
-1
1
-1
1
Full
-
-15
15
-10
10
Room
-
-1
1
-1
1
Full
-
-15
15
-10
10
nA
Digital Control
Logic High Input Voltage
VINH
Full
-
2
-
2
-
Logic Low Input Voltage
VINL
Full
-
-
0.4
-
0.4
Input Current a
IIN
VAX = VEN = 2.4 V or 0.4 V
Full
-
-1.5
1.5
-1
1
75
-
150
-
150
tTRANS
VS1 = 1.5 V, VS8 = 0 V, (DG408L)
VS1b = 1.5 V, VS4b = 0 V, (DG409L)
see figure 2
Room
Transition Time
Full
-
-
175
-
175
Break-Before-Make Time
tOPEN
VS(all) = VDA = 1.5 V,
see figure 4
Room
32
1
-
1
-
Full
-
-
-
-
-
Room
70
-
95
-
95
V
μA
Dynamic Characteristics
Enable Turn-On Time
tON(EN)
Enable Turn-Off Time
Charge
tOFF(EN)
Injectione
Q
Off Isolation e, h
OIRR
Crosstalk e
XTALK
Source Off Capacitance
e
VAX = 0 V, VS1 = 1.5 V (DG408L)
VAX = 0 V, VS1b = 1.5 V (DG409L)
see figure 3
CL = 1 nF, RGEN = 0 ,
VGEN = 1.5 V
f = 100 kHz, RL = 50 
Full
-
-
115
-
105
Room
55
-
100
-
100
Full
-
-
115
-
105
Room
0.4
-
-
-
-
Room
-70
-
-
-
-
Room
-79
-
-
-
-
CS(off)
f = 1 MHz, VS = 0 V, VEN = 0 V
Room
8
-
-
-
-
Drain Off Capacitance e
CD(off)
f = 1 MHz, VD = 0 V, VEN = 0 V
Room
19
-
-
-
-
Drain On Capacitance e
CD(on)
f = 1 MHz, VD = 0 V, VEN = 2 V
(DG409L only)
Room
33
-
-
-
-
ns
pC
dB
pF
Notes
a. Leakage parameters are guaranteed by worst case test condition and not subject to production test.
b. Room = 25 °C, full = as determined by the operating temperature suffix.
c. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.
d. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
e. Guaranteed by design, not subject to production test.
f. VIN = input voltage to perform proper function.
g. RDS(on) = RDS(on) max. - RDS(on) min.
h. Worst case isolation occurs on channel 4 do to proximity to the drain pin.
i. RDS(on) flatness is measured as the difference between the minimum and maximum measured values across a defined Analog signal.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S16-0276-Rev. J, 22-Feb-16
Document Number: 71342
6
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
DG408L, DG409L
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Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
25
R DS(on) - Drain-Source On-Resistance ( )
R DS(on) - Drain-Source On-Resistance ( )
80
70
60
V+ = 2.7 V
50
40
V+ = 4.5 V
30
V+ = 12 V
20
10
0
2
4
6
8
10
15
10
5
12
-5
-3
-1
1
3
5
VD - Drain Voltage (V)
VD - Drain Voltage (V)
RDS(on) vs. VD and Power Supply
RDS(on) vs. VD and Power Supply
50
R DS(on) - Drain-Source On-Resistance ( )
1.8
Upper Threshold Limit
1.6
1.4
1.2
VT (V)
V+ = 5 V
V- = - 5 V
0
0
Low Threshold Limit
1.0
0.8
0.6
0.4
0.2
85 °C
125 °C
40
30
25 °C
- 55 °C
20
10
0
0.0
0
2
4
6
8
10
12
0
14
1
2
3
4
5
V+ - Positive Supply Voltage (V)
VD - Drain Voltage (V)
Input Threshold vs. V+ Supply Voltage
RDS(on) vs. VD and Temperature
35
70
30
60
25
85 °C
125 °C
Switching Speed (nS)
R DS(on) - Drain-Source On-Resistance ( )
20
20
25 °C
15
- 55 °C
10
6
50
40
tTRANS
30
tON
20
tOFF
10
5
0
0
-6
-4
-2
0
2
4
RDS(on) vs. VD and Temperature
S16-0276-Rev. J, 22-Feb-16
6
0
2
4
6
8
10
12
14
Switching Time vs. Positive Supply Voltage
Document Number: 71342
7
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
DG408L, DG409L
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Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
10
40
35
IS(off)
30
Switching Speed (nS)
Leakage Current (pA)
0
- 10
ID(off)
ID(on)
- 20
tON
25
tTRANS
20
tOFF
15
10
- 30
5
- 40
-5
-3
-1
1
3
0
5
VD, V S - Analog Voltage (V)
3
4
5
± - Dual Power Supply Voltage (V)
Leakage Current vs. Analog Voltage
Switching Time vs. Dual Power Supply Voltage
1.0
6
10
CL = 1000 pF
- 10
V+ = 12 V
V- = 0 V
- 30
Loss (dB)
Q - Charge Injection (pC)
0.8
0.6
- 50
Insertion Loss
- 3 dB = 280 MHz
Off Isolation
0.4
V+ = 5 V
V- = - 5 V
- 70
V+ = 5 V
V- = 0 V
0.2
Crosstalk
- 90
0.0
-5
0
5
VS - Source Voltage (V)
- 110
0.1
10
Charge Injection vs. Analog Voltage
10
Frequency (MHz)
1
100
1000
Insertion Loss, Off Isolation, and Crosstalk vs. Frequency
(Single Supply)
35
35
CD, CS - Drain/Source Capacitance (pF)
CD, CS - Drain/Source Capacitance (pF)
V+ = 3 V
V- = 0 V
RL = 50 
CD(on)
30
V+ = 12 V
V- = 0 V
25
20
CD(off)
15
10
CS(off)
5
0
0
2
4
6
8
10
12
Drain/Source Capacitance vs. Analog Voltage
S16-0276-Rev. J, 22-Feb-16
CD(on)
30
25
V+ = 5 V
V- = - 5 V
20
CD(off)
15
10
CS(off)
5
0
-5
-4
-3
-2
-1
0
1
2
3
4
5
Charge Injection vs. Analog Voltage
Document Number: 71342
8
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
DG408L, DG409L
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Vishay Siliconix
SCHEMATIC DIAGRAM (Typical Channel)
V+
GND
D
A0
V+
VLevel
Shift
AX
Decode/
Drive
S1
V+
EN
Sn
V-
Fig. 1
TEST CIRCUITS
V+
V+
A2
S1
A1
50 
A0
3V
EN
VS1
S2 - S7
DG408L
S8
VS8
VO
D
GND
V35 pF
300 
Logic
Input
VAX
tr < 20 ns
tf < 20 ns
3V
50 %
0V
VVS8
VO
A1
A0
50 
90 %
VS1
S1a - S4a, Da
V+
S4b
tTRANS
VSB4
VO
Db
EN
GND
50 %
VS1
S1b
DG409L
3V
90 %
Switch
Output
V+
V300 
35 pF
S1 ON
tTRANS
S8 ON (DG408L)
or
S4 ON (DG409L)
V-
Fig. 2 - Transition Time
S16-0276-Rev. J, 22-Feb-16
Document Number: 71342
9
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
DG408L, DG409L
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Vishay Siliconix
TEST CIRCUITS
V+
V+
VS1
S1
EN
S2 - S8
A0
DG408L
A1
A2
GND
VO
D
V-
50
Logic
Input
50 %
0V
35 pF
300
tr < 20 ns
tf < 20 ns
3V
tON(EN)
V-
tOFF(EN)
0V
10 %
V+
Switch
Output
VO
V+
90 %
VS1
S1b
VO
EN
S1a - S4a, Da
S2b - S4b
A0
DG409L
A1
Db
GND
VO
V-
50
35 pF
300
V-
Fig. 3 - Enable Switching Time
bbm.5
3V
EN
V+
4/9
VS1
All S and Da
A0
Logic
Input
tr < 20 ns
tf < 20 ns
3V
50 %
0V
DG408L
DG409L
A1
A2
Db, D
GND
50 Ω
VO
VS
V-
V-
300 Ω
80 %
Switch
Output
35 pF
VO
0V
tOPEN
Fig. 4 - Break-Before-Make Interval
S16-0276-Rev. J, 22-Feb-16
Document Number: 71342
10
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
DG408L, DG409L
www.vishay.com
Vishay Siliconix
TEST CIRCUITS
V+
Rg
V+
SX
Logic
Input
EN
Vg
OFF
ON
OFF
0V
A0
Channel
Select
3V
VO
D
A1
CL
1 nF
A2
GND
V-
VO
Switch
Output
VO is the measured voltage due to charge transfer
error Q, when the channel turns off.
V-
Q = CL x
VO
Fig. 5 - Charge Injection
V+
V+
VIN
VIN
V+
SX
VS
SX
VS
Rg = 50 
S8
A0
D
A2
GND
RL
50 
V-
EN
S8
VO
A1
V+
S1
A0
Rg = 50 
D
VO
A1
A2
EN
GND
RL
50 
V-
VV-
VOUT
Off Isolation = 20 log
Crosstalk = 20 log
VIN
VOUT
VIN
Fig. 6 - Off Isolation
Fig. 7 - Crosstalk
V+
V+
VS
V+
S1
V+
Rg = 50 
A0
D
VO
A1
A2
GND
EN
V-
S1
Meter
A2
Channel
Select
A0
RL
50 
D
GND
VInsertion Loss = 20 log
S8
A1
VOUT
EN
V-
HP4192A
Impedance
Analyzer
or Equivalent
f = 1 MHz
V-
VIN
Fig. 8 - Insertion Loss
Fig. 9 - Source Drain Capacitance
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?71342.
S16-0276-Rev. J, 22-Feb-16
Document Number: 71342
11
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
Vishay Siliconix
SOIC (NARROW):
16ĆLEAD
JEDEC Part Number: MS-012
MILLIMETERS
16
15
14
13
12
11
10
Dim
A
A1
B
C
D
E
e
H
L
Ĭ
9
E
1
2
3
4
5
6
7
8
INCHES
Min
Max
Min
Max
1.35
1.75
0.053
0.069
0.10
0.20
0.004
0.008
0.38
0.51
0.015
0.020
0.18
0.23
0.007
0.009
9.80
10.00
0.385
0.393
3.80
4.00
0.149
0.157
1.27 BSC
0.050 BSC
5.80
6.20
0.228
0.244
0.50
0.93
0.020
0.037
0_
8_
0_
8_
ECN: S-03946—Rev. F, 09-Jul-01
DWG: 5300
H
D
C
All Leads
e
Document Number: 71194
02-Jul-01
B
A1
L
Ĭ
0.101 mm
0.004 IN
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1
Package Information
Vishay Siliconix
TSSOP: 16-LEAD
DIMENSIONS IN MILLIMETERS
Symbols
Min
Nom
Max
A
-
1.10
1.20
A1
0.05
0.10
0.15
A2
-
1.00
1.05
0.38
B
0.22
0.28
C
-
0.127
-
D
4.90
5.00
5.10
E
6.10
6.40
6.70
E1
4.30
4.40
4.50
e
-
0.65
-
L
0.50
0.60
0.70
L1
0.90
1.00
1.10
y
-
-
0.10
θ1
0°
3°
6°
ECN: S-61920-Rev. D, 23-Oct-06
DWG: 5624
Document Number: 74417
23-Oct-06
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1
PAD Pattern
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Vishay Siliconix
RECOMMENDED MINIMUM PAD FOR TSSOP-16
0.193
(4.90)
0.171
0.014
0.026
0.012
(0.35)
(0.65)
(0.30)
(4.35)
(7.15)
0.281
0.055
(1.40)
Recommended Minimum Pads
Dimensions in inches (mm)
Revision: 02-Sep-11
1
Document Number: 63550
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Application Note 826
Vishay Siliconix
RECOMMENDED MINIMUM PADS FOR SO-16
RECOMMENDED MINIMUM PADS FOR SO-16
0.372
(9.449)
0.152
0.022
0.050
0.028
(0.559)
(1.270)
(0.711)
(3.861)
0.246
(6.248)
0.047
(1.194)
Recommended Minimum Pads
Dimensions in Inches/(mm)
Return to Index
APPLICATION NOTE
Return to Index
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Document Number: 72608
Revision: 21-Jan-08
Legal Disclaimer Notice
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Disclaimer
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RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
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Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical
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operating parameters, including typical parameters, must be validated for each customer application by the customer’s
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including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
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Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
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Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free
requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
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Revision: 02-Oct-12
1
Document Number: 91000