INCH-POUND MIL-M-38510/135G 22 March 2010 SUPERSEDING MIL-M-38510/135F 8 April 2008 MILITARY SPECIFICATION MICROCIRCUITS, LINEAR, LOW OFFSET OPERATIONAL AMPLIFIERS, MONOLITHIC SILICON Reactivated after 5 November 2003 and may be used for new and existing designs and acquisitions This specification is approved for use by all Departments and Agencies of the Department of Defense. The requirements for acquiring the product described herein shall consist of this specification sheet and MIL-PRF-38535. 1. SCOPE 1.1 Scope. This specification covers the detail requirements for monolithic silicon, low offset operational amplifiers. Two product assurance classes and a choice of case outlines and lead finishes are provided and are reflected in the complete part number. For this product, the requirements of MIL-M-38510 have been superseded by MIL-PRF-38535 (see 6.4). 1.2 Part or Identifying Number (PIN). The PIN is in accordance with MIL-PRF-38535 and as specified herein. 1.2.1 Device types. Devices may be monolithic or they may consist of two separate independent die. The device types are as follows: Circuit Device type 01 02 03 04 05 06 Single operational amplifier, ultra low offset, internally compensated. Single operational amplifier, low offset, internally compensated. Single operational amplifier, ultra low offset, internally compensated, ultra low noise. Dual operational amplifier, low offset, ultra low noise internally compensated. Single operational amplifier, ultra low offset, internally compensated, ultra low noise, broadband. Single operational amplifier, ultra low offset, internally compensated, ultra low noise. 1.2.2 Device class. The device class is the product assurance level as defined in MIL-PRF-38535. 1.2.3 Case outline. The case outlines are as designated in MIL-STD-1835 and as follows: Outline letter C G P 2 Descriptive designator GDIP1-T14 or CDIP2-T14 MACY1-X8 GDIP1-T8 or CDIP2-T8 CQCC1-N20 Terminals 14 8 8 20 Package style Dual-in-line Can Dual-in-line Square leadless chip carrier Comments, suggestions, or questions on this document should be addressed to: Defense Supply Center Columbus, ATTN: DSCC-VAS, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to [email protected]. Since contact information can change, you may want to verify the currency of this address information using the ASSIST Online database at https://assist.daps.dla.mil. AMSC N/A FSC 5962 MIL-M-38510/135G 1.3 Absolute maximum ratings. Supply voltage (VCC) ....................................................................... 22 V Input voltage (VIN) ........................................................................... Differential input voltage range: Device types 01 and 02 ................................................................ Device types 03, 04, 05, and 06 ................................................... Output short-circuit duration ............................................................. Lead temperature (soldering, 60 seconds) ...................................... Storage temperature range .............................................................. Junction temperature (TJ) ................................................................ VCC 30 V 0.7 V 1/ 2/ +300C -65C to +150C +175C 3/ Maximum power dissipation (PD) ..................................................... 500 mW 4/ 1.4 Recommended operating conditions. Supply voltage range (VCC): Device types 01 and 02 ................................................................ 4.5 V dc to 20.0 V Device types 03, 04, 05, and 06 ................................................... 4.5 V dc to 18.0 V Ambient operating temperature range (TA) ...................................... -55C to +125C 1.5 Power and thermal characteristics. Case outlines Maximum allowable power dissipation Maximum Maximum JC JA 120C/W C 400 mW at TA = +125C 28C/W G 330 mW at TA = +125C 60C/W 150C/W P 400 mW at TA = +125C 28C/W 120C/W 2 400 mW at TA = +125C 20C/W 120C/W 2. APPLICABLE DOCUMENTS 2.1 General. The documents listed in this section are specified in sections 3, 4, or 5 of this specification. This section does not include documents cited in other sections of this specification or recommended for additional information or as examples. While every effort has been made to ensure the completeness of this list, document users are cautioned that they must meet all specified requirements of documents cited in sections 3, 4, or 5 of this specification, whether or not they are listed. ______ 1/ If the differential input voltage exceeds 0.7 V, the input current should be limited to 10 mA. 2/ Output may be shorted to ground indefinitely at VS = 15 volts, TA = 25C. Temperature and supply voltages shall be limited to ensure dissipation rating is not exceeded. 3/ For short term test (in the specific burn-in and steady-state life test configuration when required and up to 168 hours maximum), TJ = 175C. 4/ Maximum power dissipation versus ambient temperature. 2 MIL-M-38510/135G 2.2 Government documents. 2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATIONS MIL-PRF-38535 - Integrated Circuits (Microcircuits) Manufacturing, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-883 MIL-STD-1835 - Test Method Standard, Microcircuits. - Electronic Component Case Outlines. (Copies of these documents are available online at https://assist.daps.dla.mil/quicksearch/ or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.3 Order of precedence. Unless otherwise noted herein or in contract, in the event of a conflict between the text of this document and the references cited herein (except for related specification sheets), the text of this document takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 Qualification. Microcircuits furnished under this specification sheet shall be products that are manufactured by a manufacturer authorized by the qualifying activity for listing on the applicable qualified manufacturers list before contract award (see 4.3 and 6.3). 3.2 Item requirements. The individual item requirements shall be in accordance with MIL-PRF-38535 and as specified herein or as modified in the device manufacturer's Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described herein. 3.3 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified in MIL-PRF-38535 and herein. 3.3.1 Circuit diagram and terminal connections. The circuit diagram and terminal connections shall be as specified on figure 1. 3.3.2 Schematic circuits. The schematic circuits shall be maintained by the manufacturer and made available to the qualifying activity and the preparing activity upon request. 3.3.3 Case outlines. The case outlines shall be as specified in 1.2.3. 3.4 Lead material and finish. The lead material and finish shall be in accordance with MIL-PRF-38535 (see 6.6). 3.5 Electrical performance characteristics. The electrical performance characteristics are as specified in table I, and unless otherwise specified, apply over the full recommended ambient operating temperature range for supply voltages from 4.5 V dc to 20 V dc for device types 01 and 02 and for supply voltages from 4.5 V dc to 18 V dc for device types 03, 04, 05, and 06. Unless otherwise specified, source resistance (RS) shall be 50 ohms for all tests. 3.5.1 Offset null circuits. The nulling inputs shall be capable of being nulled 0.5 mV beyond the specified offset voltage limits for –55C TA 125C using the circuit on figure 2. 3.5.2 Instability oscillations. The devices shall be free of oscillations when operated in the test circuits of this specification sheet. 3 MIL-M-38510/135G TABLE I. Electrical performance characteristics. Test Input offset voltage Symbol VIO Conditions 1/ VCC = 15 V, unnulled, see figure 3 and reference 3.5 herein, unless otherwise specified 2/ 3/ 4/ See figure 4, TA = 25C 2/ 3/ -55C TA +125C End-point limit 4/ Input offset voltage temperature sensitivity Input bias current VIO /T +IIB TA = 25C 2/ -55C TA +125C 2/ End-point limit 4/ See footnotes at end of table. 4 Device type Limits Unit Min Max 01,03, 05,06 -25 25 02 -75 75 04 -80 80 01,03, 05,06 -60 60 02 -200 200 04 -180 180 01,03, 05,06 -100 100 02 -175 175 04 -180 180 01,03, 05,06 -0.6 0.6 02 -1.3 1.3 04 -1.0 1.0 01 -2 2 02 -3 3 03,04, 05,06 -40 40 01 -4 4 02 -6 6 03,04, 05,06 -60 60 01 -3 3 02 -4.5 4.5 03,04, 05,06 -50 50 V V/C nA MIL-M-38510/135G TABLE I. Electrical performance characteristics – Continued. Test Input bias current Symbol -IIB Conditions 1/ VCC = 15 V, unnulled, see figure 3 and reference 3.5 herein, unless otherwise specified TA = 25C 2/ -55C TA +125C 2/ End-point limit 4/ Input offset current IIO TA = 25C 2/ -55C TA +125C 2/ Power supply rejection ratio +PSRR +VCC = 20 V to 5 V, -VCC = -15 V, TA = 25C +VCC = 18 V to 5 V, -VCC = -15 V, TA = 25C -PSRR -VCC = -20 V to -5 V, +VCC = 15 V, TA = 25C -VCC = -18 V to -5 V, +VCC = 15 V, TA = 25C See footnotes at end of table. 5 Device type Limits Unit Min Max 01 -2 2 02 -3 3 03,04, 05,06 -40 40 01 -4 4 02 -6 6 03,04, 05,06 -60 60 01 -3 3 02 -4.5 4.5 03,04, 05,06 -50 50 01 -2 2 02 -2.8 2.8 03,04, 05,06 -35 35 01 -4 4 02 -5.6 5.6 03,04, 05,06 -50 50 01,02 -10 10 03,04, 05,06 -10 10 01,02 -10 10 03,04, 05,06 -10 10 nA nA V/V MIL-M-38510/135G TABLE I. Electrical performance characteristics – Continued. Test Symbol Conditions 1/ VCC = 15 V, unnulled, see figure 3 and reference 3.5 herein, unless otherwise specified Device type Limits Unit Min Max 01,02 -20 20 03,04, 05,06 -16 16 01,02 -20 20 03,04, 05,06 -16 16 01,02 -10 10 03,04, 05,06 -10 10 01,02 -20 20 03,04, 05,06 -16 16 VCM = 13 V, TA +25C 01,02 110 VCM = 11 V, TA +25C 03,04, 05,06 114 01,02 106 03,04, 05,06 108 +VCC = 20 V to 5 V, Power supply rejection ratio +PSRR -VCC = -15 V, V/V -55C TA +125C +VCC = 18 V to 5 V, -VCC = -15 V, -55C TA +125C -VCC = -20 V to -5 V, -PSRR +VCC = 15 V, -55C TA +125C -VCC = -18 V to -5 V, +VCC = 15 V, -55C TA +125C PSRR VCC = 4.5 V to 20 V, TA +25C VCC = 4.5 V to 18 V, TA +25C VCC = 4.5 V to 20 V, -55C TA +125C VCC = 4.5 V to 18 V, -55C TA +125C Common mode rejection mode CMRR VCM = 13 V, -55C TA +125C VCM = 10 V, -55C TA +125C See footnotes at end of table. 6 dB MIL-M-38510/135G TABLE I. Electrical performance characteristics – Continued. Test Adjustment for input offset Symbol VIO Adj(+) Conditions 1/ VCC = 15 V, unnulled, see figure 3 and reference 3.5 herein, unless otherwise specified TA +25C 2/ Device type Limits Min All t 25 ms 5/ -55C TA +125C t 25 ms 5/ TA = +25C, +125C t 25 ms 5/ TA = -55C IOS(-) t 25 ms 5/ -55C TA +125C t 25 ms 5/ TA = +25C, +125C t 25 ms 5/ TA = -55C Supply current ICC TA = +25C 2/ 6/ -55C TA +125C 2/ 6/ Output voltage swing (minimum) VOP mV -0.5 Adj(-) IOS(+) Max 0.5 VIO Output short circuit current Unit RL = 1 k, 03,05, 06 -70 04 -60 01,02 -65 01,02 -70 mA 03,04, 05,06 70 01,02 65 01,02 70 01,02 4 03,04, 05,06 5 01,02 5 03,04, 05,06 6 01,02 -10 10 03,04, 05,06 -10 10 RL = 2,000 , 01,02 -12 12 -55C TA +125C 03,04, 05,06 -11.5 11.5 -55C TA +125C RL = 600 , -55C TA +125C See footnotes at end of table. 7 mA V MIL-M-38510/135G TABLE I. Electrical performance characteristics – Continued. Test Open loop voltage gain (single ended) Symbol AVS Conditions 1/ VCC = 15 V, unnulled, see figure 3 and reference 3.5 herein, unless otherwise specified TA = +25C 7/ -55C TA +125C 7/ Slew rate SR(+) VIN = 5 V, AV = 1, TA = +25C, see figure 5 and SR(-) VIN = 1 V, AV = 5, TA = +25C, see figure 5 Input noise voltage density En Device type Limits Min 01 300 02 200 03,04, 05,06 1,000 01 200 02 150 03,04, 05,06 600 01,02 .08 03,04, 06 1.7 05 11 Unit Max V/mV V/s fO = 10 Hz, TA = +25C, 01,02 18 nV / see figure 6 03,05 5.5 Hz 06 8 04 6.0 01,02 14 03,05 4.0 06 5.0 04 5.0 01,02 12 03,05 3.8 06 4 04 3.9 fO = 100 Hz fO = 1 kHz See footnotes at end of table. 8 MIL-M-38510/135G TABLE I. Electrical performance characteristics – Continued. Test Low frequency input noise voltage Input noise current density Symbol Enpp In Conditions 1/ VCC = 15 V, unnulled, see figure 3 and reference 3.5 herein, unless otherwise specified Device type Limits Min Unit Max fO = 0.1 Hz to 10 Hz, 01,02 TA = +25C, 03,05 0.18 see figure 7 06 0.375 04 0.20 03,04, 05 5.66 06 35 03,05 1.88 04 2.1 06 18 03,05 0.84 04 0.89 06 5 fO = 10 Hz, TA = +25C, see figure 6 fO = 100 Hz, TA = +25C, see figure 6 fO = 1 kHz, TA = +25C, see figure 6 0.6 VPP pA / Hz 6/ For devices marked with the “Q” certification mark, the parameters listed herein shall be guaranteed if not tested to the limits specified in accordance with the manufacturer’s QM plan. Tested at VCM = 0 V, VCC = 15 V. Due to the inherent warm-up drift of types 01, 03, 04, 05, and 06, testing shall occur no sooner than 5 minutes after application of power. Refer to table IV for end-point parameters. Continuous short circuit limits are considerably less than the indicated test limits since maximum power dissipation cannot be exceeded. For device type 04, ICC is for each amplifier. 7/ VOUT = 0 to +10 for AVS(+) and VOUT = 0 to -10 for AVS(-). RL = 2,000 . 1/ 2/ 3/ 4/ 5/ 3.6 Electrical test requirements. Electrical test requirements for each device class shall be the subgroups specified in table II. The electrical tests for each subgroup are described in table III. 3.7 Marking. Marking shall be in accordance with MIL-PRF-38535. 3.8 Microcircuit group assignment. The devices covered by this specification sheet shall be in microcircuit group number 49 (see MIL-PRF-38535, appendix A). 9 MIL-M-38510/135G TABLE II. Electrical test requirements. Subgroups (see table III) Class S Class B devices devices MIL-PRF-38535 test requirements Interim electrical parameters Final electrical test parameters 1/ Group A test requirements 2/ Group B electrical test parameters when using the method 5005 QCI option Group C end-point electrical 3/ parameters Group D end-point electrical parameters 3/ 1 1 1, 2, 3, 4, 7 1, 2, 3, 4, 7 1, 2, 3, 4, 5, 6, 7, 9 1, 2, 3 and table IV delta limits 1, 2, 3 and table IV delta limits 1, 2, 3 and table IV end-point limits 1, 2, 3, 4, 5, 6, 7, 9 N/A 1 and table IV delta limits 1 and table IV end-point limits 1/ Percent defective allowable (PDA) applies to subgroup 1. 2/ Subgroup 9 shall have a sample size series number of 5 for class S and class B devices. 3/ Table IV end-point parameters shall be used for VIO and IIB for class S and class B devices. 4. VERIFICATION 4.1 Sampling and inspection. Sampling and inspection procedures shall be in accordance with MIL-PRF-38535 or as modified in the device manufacturer’s Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described herein. 4.2 Screening. Screening shall be in accordance with MIL-PRF-38535 and shall be conducted on all devices prior to qualification and quality conformance inspection. The following additional criteria shall apply: a. The burn-in test duration, test condition, and test temperature, or approved alternatives, shall be as specified in the device manufacturer's QM plan in accordance with MIL-PRF-38535. The burn-in test circuit shall be maintained under document control by the device manufacturer's Technology Review Board (TRB) in accordance with MIL-PRF-38535 and shall be made available to the acquiring or preparing activity upon request. The test circuit shall specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in method 1015 of MIL-STD-883. b. Interim and final electrical test parameters shall be as specified in table II, except interim electrical parameters test prior to burn-in is optional at the discretion of the manufacturer. c. Additional screening for space level product shall be as specified in MIL-PRF-38535. 10 MIL-M-38510/135G 4.3 Qualification inspection. Qualification inspection shall be in accordance with MIL-PRF-38535. 4.4 Technology Conformance inspection (TCI). Technology conformance inspection shall be in accordance with MIL-PRF-38535 and herein for groups A, B, C, and D inspections (see 4.4.1 through 4.4.4). 4.4.1 Group A inspection. Group A inspection shall be in accordance with table III of MIL-PRF-38535 and as follows: a. Tests shall be as specified in table II herein. b. Subgroups 8, 10, and 11 shall be omitted. 4.4.2 Group B inspection. Group B inspection shall be in accordance with table II of MIL-PRF-38535. 4.4.3 Group C inspection. Group C inspection shall be in accordance with table IV of MIL-PRF-38535 and as follows: a. End-point electrical parameters shall be as specified in table II herein. Delta limits shall apply to group C inspection and shall consist of tests specified in table IV herein. b. The steady-state life test duration, test condition, and test temperature, or approved alternatives, shall be as specified in the device manufacturer's QM plan in accordance with MIL-PRF-38535. The burn-in test circuit shall be maintained under document control by the device manufacturer's TRB in accordance with MIL-PRF-38535 and shall be made available to the acquiring or preparing activity upon request. The test circuit shall specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in test method 1005 of MIL-STD-883. 4.4.4 Group D inspection. Group D inspection shall be in accordance with table V of MIL-PRF-38535. End-point electrical parameters shall be as specified in table II herein. 4.5 Methods of inspection. Methods of inspection shall be specified and as follows. 4.5.1 Voltage and current. All voltage values given are referenced to the ground terminal of the device under test (DUT). Current values given are for conventional current and are positive when flowing into the referenced terminal. 4.5.2 Life test cool down procedures. When devices are measured at +25C following application of the steadystate life or burn-in test condition, they shall be cooled to within 10C of their power stable condition at room temperature prior to removal of the bias. 11 MIL-M-38510/135G NOTE: For case outline G only, the –VCC pin is tied to the case of the can package. FIGURE 1. Circuit diagram and terminal connections. 12 MIL-M-38510/135G FIGURE 2. Offset null circuits. 13 MIL-M-38510/135G FIGURE 3. Test circuit for static and slew rate tests. 14 MIL-M-38510/135G NOTES: 1. 2. 3. 4. 5. 6. 7. 8. 9. 10. 11. 12. 13. All resistors are 0.1% tolerance and all capacitors are 10% unless specified otherwise. Precautions shall be taken to prevent damage to the DUT during insertion into socket and change of relay state (example: disable voltage supplies and current limit VCC). Compensation capacitors should be added as required for test circuit stability. Proper wiring procedures shall be followed to prevent unwanted coupling and oscillations. Loop response and settling time shall be consistent with the test rate such that any value has settled for at least five loop time constants before the value is measured. Adequate settling time should be allowed such that each parameter has settled to within five percent of its final value. All relays are shown in the normal de-energized state. Saturation of the nulling amp is not allowed on tests where the pin 4 value is measured. The load resistors 1,000 and 2,050 yield effective load resistance of 100 and 2,000 respectively. Any oscillation greater than 300 mV pk-pk in amplitude shall be cause for device failure. Device type 04 only, test both halves for all tests. The idle half of the dual amplifiers shall be maintained in this configuration where V1 is midway between +VCC and –VCC, or the manufacturer has the option to connect the idle half in a VID configuration such that the inputs are maintained at the same common mode voltage as the DUT. Circuit within dashed area used for devices 03, 04, 05, and 06 only. For devices 01 and 02: R1 = 500 k .01%; R2 = 500 k .01%. For device 03, 04, 05, and 06: R1 = 50 k .01%; R2 = 50 k .01%. When using this test circuit for measuring slew rate, the oscillation detector shall be disabled. For devices 01 and 02: R3 = 27 k, 5%, R4 = 100 k, 5%. For devices 03, 04, 05, and 06: R3 = 0 , R4 = 10 k, 5%. FIGURE 3. Test circuit for static and slew rate tests – Continued. 15 MIL-M-38510/135G NOTES: 1. Same configuration used for both amplifiers of device 04. 2. Low thermal EMF sockets are recommended. The number of solder joints and dissimilar metal junctions are to be minimized. The test circuit should contain a minimum number of components. All components should have the lowest possible temperature coefficients. 3. The temperature of the test circuit should be equal to that of the DUT. 4. Resistors 16 k 10.0%, 32 10%, and 16 k 10.0% shall be used together or resistors 50 k 1.0%, 100 1%, and 50 k 1.0% shall be used together. FIGURE 4. Voltage offset test circuit. 16 MIL-M-38510/135G NOTES: 1. Resistors are 1.0% tolerance and capacitors are 10% tolerance. 2. This capacitance includes the actual measured value with stray and wire capacitance. 3. Precautions shall be taken to prevent damage to the DUT during insertion into socket and in applying power. 4. Pulse input and output characteristics are shown on the next space. 5. Compensation capacitors should be added as required for test circuit stability. Proper wiring procedures shall be followed to prevent unwanted coupling and oscillations. Loop response and settling time shall be consistent with the test rate such that any value has settled for at least five loop time constants before the value is measured. 6. For device type 05 only. FIGURE 5. Test circuit for slew rate. 17 MIL-M-38510/135G Parameter symbol SR(+) SR(-) Device type 01, 02, 03, 04, 06 01, 02, 03, 04, 06 SR(+) 05 SR(-) 05 Input pulse signal at tr 50 ns Output pulse signal Equation -5 V to +5 V step (AV = 1) Waveform 1 SR(+) = VO(+) / t(+) +5 V to -5 V step (AV = 1) Waveform 2 SR(-) = VO(-) / t(-) Waveform 1 SR(+) = VO(+) / t(+) Waveform 2 SR(-) = VO(-) / t(-) -1 V to +1 V step (AV = 5) +1 V to -1 V step (AV = 5) FIGURE 5. Test circuit for slew rate - Continued. 18 MIL-M-38510/135G NOTES: 1. Input noise voltage density (En) test: R1 = 50 , R2 = 10 k. Input noise current density (In) test: R1 = 105 k, R2 = 2 M. 2. All resistors are metal film and 1% tolerance. Capacitors are in microfarads and are 10% tolerance. 3. Quan-Tech model 2283 or equivalent. 4. Quan-Tech model 2181 or equivalent. FIGURE 6. Noise density test circuit. 19 MIL-M-38510/135G NOTES: 1. All capacitor values are for non polarized capacitors only. 2. Resistors values are 1.0%. FIGURE 7. Low frequency test circuit. 20 TABLE III. Group A inspection for device types 01 and 02. Subgroup Symbol MIL-STD883 Test no. Notes method 1/ Limits Adapter pin number 1 2 3 Energized relays Measured pin Equation Unit Device type No. Value Units Min Max +IIB 4001 “ 1 2 15 15 -15 -15 0 0 None K1 4 4 E1 E2 V V VIO = E1 +IIB = 2 (E1 – E2) 01 02 -2 -3 2 3 nA “ TA = +25C -IIB “ 3 15 -15 0 K2 4 E3 V -IIB = 2 (E3 – E1) IIO “ 4 4003 5 +PSRR = 66 (E4 – E5) -2 -3 -2 -2.8 -10 2 3 2 2.8 10 “ “ nA +PSRR 01 02 01 02 01,02 V/V -PSRR 4003 6 -PSRR = 66 (E6 – E7) 01,02 -10 10 V/V PSRR 4003 7 PSRR = 32.25 x (E8 - E9) 01,02 -10 10 V/V CMRR 4003 2/ IIO = 2 (2E1 – E2 –E3) 20 5 15 15 4.5 20 -15 -15 -20 -5 -4.5 -20 0 0 0 0 0 0 None 4 8 28 2 -2 -28 9 15 10 15 E4 E5 E6 E7 E8 E9 V “ V “ V “ None 4 None 4 -13 13 None 4 E10 E11 V “ CMRR = 20 log |26000/(E11 – E10)| 01,02 110 dB -15 0 K5 4 E12 “ VIO ADJ(+) = E1 – E12 01,02 0.5 mV -15 0 K5,K6 4 E13 “ VIO ADJ(-) = E1 – E13 01,02 3011 11 3/ 15 -15 -10 None 5 I1 mA IOS(+) = I1 01,02 IOS(-) 3011 12 3/ 15 -15 10 None 5 I2 mA IOS(-) = I2 01,02 65 mA ICC 4005 13 15 -15 0 None 1 I3 mA ICC = I3 01,02 4 mA 2 VIO 4001 14 15 -15 0 E14 V VIO = E14/1000 TA = +125C +IIB 4001 “ 16 17 15 15 -15 -15 0 0 None K1 4 4 E15 E16 “ “ VIO = E15 +IIB = 2 (E15 – E16) 01 02 01 02 -60 -200 -4 -6 60 200 4 6 V “ nA “ -IIB 18 15 -15 0 K2 “ E17 “ IIO “ “ “ -IIB = 2 (E17 – E15) IIO = 2 (2E15 – E16 –E17) “ 20 4 4 -PSRR = 66(E20 – E21) 01,02 -20 20 V/V PSRR “ 22 None 4 PSRR = 32.25 x (E22 – E23) 01,02 -20 20 V/V CMRR 4003 23 None 4 V V V V V V V “ V/V None E18 E19 E20 E21 E22 E23 E24 E25 +PSRR = 66(E18 – E19) 21 0 0 0 0 0 0 -13 13 None “ -15 -15 -20 -5 -4.5 -20 -2 -28 4 6 4 5.6 20 -PSRR 20 5 15 15 4.5 20 28 2 -4 -6 -4 -5.6 -20 “ “ nA +PSRR 01 02 01 02 01,02 CMRR = 20 log |26000/(E24 – E25)| 01,02 106 IOS(+) 3011 24 3/ 15 -15 -10 None 5 I4 mA IOS(+) = I4 01,02 -65 IOS(-) 3011 25 3/ 15 -15 10 None 5 I5 mA IOS(-) = I5 01,02 65 mA ICC 4005 26 15 -15 0 None 1 I6 mA ICC = I6 01,02 5 mA 21 VIO ADJ(+) VIO ADJ(-) IOS(+) See footnotes at end of table. 19 See fig. 4 2/ -0.5 -65 mV mA dB mA MIL-M-38510/135G 1 TABLE III. Group A inspection for device types 01 and 02 – Continued. Subgroup Symbol 3 VIO TA = -55C +IIB MIL-STD883 Test no. method 4001 “ 4001 “ Adapter pin number Energized relays 1/ 1 2 3 Fig. 4 15 -15 0 29 30 15 15 -15 -15 0 0 None K1 31 15 -15 0 K2 27 IIO “ “ 4001 32 +PSRR 4003 33 -PSRR 4003 34 PSRR 4003 35 CMRR 4003 36 -IIB Notes Measured pin Equation No. Value Units -60 -200 -4 -6 60 200 4 6 V “ nA “ -4 -6 -4 -5.6 -20 4 6 4 5.6 20 “ “ nA +PSRR = 66 (E30 – E31) 01 02 01 02 01,02 V/V -PSRR = 66 (E32 – E33) 01,02 -20 20 V/V PSRR = 32.25 x (E34 – E35) 01,02 -20 20 V/V CMRR = 20 log |26000/(E36 – E37)| 01,02 106 IOS(+) = I7 01,02 -70 70 mA 5 mA VIO = E26/1000 4 “ E27 E28 “ “ VIO = E27 +IIB = 2 (E27 – E28) “ E29 “ -IIB = 2 (E29 – E27) IOS(+) 3011 37 3/ 20 5 15 15 4.5 20 28 2 15 4 None 5 E30 E31 E32 E33 E34 E35 E36 E37 I7 None 4 None 4 None 4 V “ V “ V “ V “ mA IOS(-) 3011 38 3/ 15 -15 10 None 5 I8 mA IOS(-) = I8 01,02 39 15 -15 0 None 1 I9 mA ICC 3005 ICC = I9 01,02 4 +VOP 4004 40 41 15 -15 -15 K3 K4 5 E38 E39 V V +VOP = E38 +VOP = E39 01,02 01,02 TA = +25C -VOP 4004 42 43 15 -15 15 K3 K4 5 E40 E41 V V -VOP = E40 -VOP = E41 01,02 01,02 AVS(+) 4004 44 15 -15 -10 K4 4 E42 V AVS(+) = 10/(E1 – E42) AVS(-) 4004 45 15 -15 10 K4 4 E43 V AVS(-) = 10/(E43 – E1) 01 02 01 300 200 300 VIO 4001 46 5 +VOP 4004 200 -25 -75 10 12 TA = +125C -VOP VIO/ See fig. 4 15 -15 0 47 48 15 -15 -15 K3 K4 4004 49 50 15 -15 15 K3 K4 4001 15 E44 V VIO = E44/1000 5 E45 E46 V V +VOP = E45 +VOP = E46 02 01 02 01,02 01,02 5 E47 E48 V V -VOP = E47 -VOP = E48 01,02 01,02 VIO / T = (E14 – E44)/100(1000) 01 See fig. 4 4/ T AVS(+) 4004 51 15 -15 -10 K4 4 E49 V AVS(+) = 10/(E15 – E49) AVS(-) 4004 52 15 -15 10 K4 4 E50 V AVS(-) = 10/(E50 – E15) See footnotes at end of table. dB mA 10 12 V “ -10 -12 “ “ V/mV V/mV 25 75 V V “ -10 -12 “ “ -0.6 0.6 V/C 02 01 02 01 -1.3 200 150 200 1.3 02 150 V/mV V/mV MIL-M-38510/135G 22 01 02 01 02 V None Unit Max IIO = 2 (2E27 – E28 –E29) 0 0 0 0 0 0 -13 13 -10 Limits Min E26 2/ -15 -15 -20 -5 -4.5 -20 -2 -28 -15 Device type TABLE III. Group A inspection for device types 01 and 02 – Continued. Subgroup 6 TA = -55C Symbol MIL-STD883 method Test no. 4004 53 “ 54 -VOP 4004 55 “ 56 VIO/T 4001 28 AVS(+) 4004 57 +VOP AVS(-) 4004 58 7 SR(+) 4002 59 TA = +25C SR(-) 4002 60 En 61 63 23 Enpp See footnotes at end of table. 64 Adapter pin nunbers 1 2 3 15 -15 -15 Energized relays K3 Measured pin -15 15 K3 Units 5 E51 V +VOP = E51 01,02 10 E52 “ +VOP = E52 01,02 12 E53 V -VOP = E53 01,02 E54 “ 5 K4 5/ 6/ 5/ 6/ fO = 10 Hz fO = 100 Hz fO = 1 kHz See fig. 5 See fig, 6 -15 -10 K4 Limits Value See fig. 4 4/ 15 Device type No. K4 15 Equation 4 E55 V Min Unit Max V “ -10 V -VOP = E54 01,02 VIO / T = (E26 – E44) / 80(1000) 01 02 -0.6 -1.3 -12 “ 0.6 1.3 V/C AVS(+) = 10 / (E27 – E55) 01 200 V/mV 150 200 “ V/mV 15 -15 10 K4 4 E56 V AVS(-) = 10 / (E56 – E27) 02 01 15 -15 0 K4,K9 5 V / s SR(+) = VO(+) / t(+) 02 01,02 150 .08 “ V/s 15 -15 0 K4, K9 5 VO(+), t(+) VO(-), t(-) E57 V / s SR(-) = VO(-) / t(-) 01,02 .08 V/s nV / En = E57 01,02 18 Hz Hz E58 En = E58 14 E59 En = E59 12 E60 VPP nV / Enpp = E60 / 50000 01,02 0.6 VPP MIL-M-38510/135G 62 Notes TABLE III. Group A inspection for device types 03, 04, 05, and 06 - Continued. Subgroup Symbol MIL-STD883 method Test no. Notes Adapter pin number 1 2 3 Energized relays Measured pin No. Equation Device type Value Units Limits Unit Min Max +IIB 4001 “ 1 2 15 15 -15 -15 0 0 None K1 4 4 E1 E2 V V 03,04, 05,06 -40 40 nA “ TA = +25C VIO = E1 +IIB = 20 (E1 – E2) +IIB = 2 (E1 – E2) - device type 05 -IIB “ 3 15 -15 0 K2 4 E3 V -IIB = 20 (E3 – E1) -IIB = 2 (E3 – E1) - device type 05 03,04, 05,06 -40 40 “ “ IIO “ 4 03,04, 05,06 -35 35 nA +PSRR 4003 5 IIO = 20 (2E1 – E2 –E3) IIO = 2 (2E1 – E2 –E3) – device type 05 +PSRR = 76.9 (E4 – E5) -10 10 V/V -PSRR 4003 6 -10 10 V/V PSRR 4003 7 03,04, 05,06 03,04, 05,06 03,04, 05,06 -10 10 V/V CMRR 4003 24 VIO ADJ(+) VIO ADJ(-) IOS(+) 3011 2/ 18 5 15 15 4.5 18 -15 -15 -18 -5 -4.5 -18 0 0 0 0 0 0 8 26 4 -4 -26 9 15 10 11 IOS(-) 3011 12 ICC 4005 13 2 VIO 4001 14 TA = +125C +IIB 4001 “ -IIB 3/ 3/ None 4 E4 E5 E6 E7 E8 E9 V “ V “ V “ None 4 None 4 -11 11 None 4 E10 E11 V “ CMRR = 20 log |22000/(E11 – E10)| 03,04, 05,06 114 dB -15 0 K5 4 E12 “ VIO ADJ(+) = E1 – E12 0.5 mV 0 K5,K6 4 E13 “ VIO ADJ(-) = E1 – E13 -10 None 5 I1 mA IOS(+) = I1 03,04, 05,06 03,04, 05,06 03,05,06 15 -15 15 -15 -PSRR = 76.9 (E6 – E7) PSRR = 37.04 x (E8 - E9) 15 -15 10 None 5 I2 mA IOS(-) = I2 15 -15 0 None 1 I3 mA ICC = I3 15 -15 0 E14 V VIO = E14/1000 16 17 15 15 -15 -15 0 0 None K1 4 4 E15 E16 “ “ VIO = E15 +IIB = 20 (E15 – E16) +IIB = 2 (E15 – E16) – device type 05 “ “ 18 15 -15 0 K2 “ E17 “ -IIB = 20 (E17 – E15) -IIB = 2 (E17 – E15) – device type 05 IIO “ 19 +PSRR 4003 20 IIO = 20 (2E15 – E16 –E17) IIO = 2 (2E15 – E16 –E17) – device type 05 +PSRR = 76.9 (E18 – E19) -PSRR 4003 21 PSRR 4003 22 CMRR 4003 23 See footnotes at end of table. See fig. 4 2/ 18 5 15 15 4.5 18 -15 -15 -18 -5 -4.5 -18 0 0 0 0 0 0 25 5 -5 -25 -10 10 None 4 None 4 None 4 None 4 E18 E19 E20 E21 E22 E23 V “ V “ V “ E24 E25 V “ -PSRR = 76.9 (E20 – E21) PSRR = 37.04 x (E22 – E23) CMRR = 20 log |20000/(E24 – E25)| 04 03,04,05, 06 03,04,05, 06 03,05,06 04 03,04, 05,06 -0.5 -70 mV mA -60 70 mA 5 mA -60 -180 -60 60 180 60 V “ nA “ 03,04, 05,06 -60 60 “ “ 03,04, 05,06 -50 50 nA 03,04, 05,06 03,04, 05,06 03,04, 05,06 -16 16 V/V -16 16 V/V -16 16 V/V 03,04, 05,06 108 dB MIL-M-38510/135G 1 TABLE III. Group A inspection for device types 03, 04, 05, and 06 – Continued. Subgroup 2 Symbol IOS(+) MIL-STD883 method 3011 Limits Test no. 24 TA = +125C IOS(-) 3011 25 ICC 4005 26 3 VIO 27 TA = -55C +IIB 4001 “ 4001 “ Notes Adapter pin number 1/ 1 2 3 3/ 15 -15 -10 3/ Energized relays Measured pin Equation No. Value Units None 5 I4 mA Min IOS(+) = I4 -15 10 None 5 I5 mA IOS(-) = I5 15 -15 0 None 1 I6 mA ICC = I6 15 -15 0 E26 V VIO = E26/1000 29 30 15 15 -15 -15 0 0 None K1 4 “ E27 E28 “ “ VIO = E27 +IIB = 20 (E27 – E28) +IIB = 2 (E27 – E28) – device type 05 15 -15 0 K2 “ E29 “ -IIB = 20 (E29 – E27) -IIB = 2 (E29 – E27) – device type 05 IIO = 20 (2E27 – E28 –E29) IIO = 2 (2E27 – E28 –E29) – device type 05 +PSRR = 76.9 (E30 – E31) -IIB “ “ 31 IIO 4001 32 +PSRR 4003 33 -PSRR 4003 34 PSRR 4003 35 CMRR 4003 36 IOS(+) 3011 37 See fig. 4 2/ 3/ 18 5 15 15 4.5 18 25 5 15 -15 -15 -18 -5 -4.5 -18 -5 -25 -15 0 0 0 0 0 0 -10 10 -10 None 4 None 4 None 4 None 4 None 5 E30 E31 E32 E33 E34 E35 E36 E37 I7 V “ V “ V “ V “ mA -PSRR = 76.9 (E32 – E33) PSRR = 37.04 x (E34 – E35) CMRR = 20 log |20000/(E36 – E37)| IOS(+) = I7 03,05,06 -70 04 03,04,05, 06 03,04,05, 06 03,05,06 04 03,04, 05,06 -60 Max mA 70 mA 6 mA -60 -180 -60 60 180 60 V “ nA “ 03,04, 05,06 -60 60 “ “ 03,04, 05,06 -50 50 nA 03,04, 05,06 03,04, 05,06 03,04, 05,06 03,04, 05,06 03,05,06 -16 16 V/V -16 16 V/V -16 16 V/V 108 dB -70 mA 15 -15 10 None 5 I8 mA IOS(-) = I8 39 15 -15 0 None 1 I9 mA ICC = I9 4004 40 41 15 -15 -15 K7 K4 5 E38 E39 V V +VOP = E38 +VOP = E39 04 03,04,05, 06 03,04,05, 06 03,04,06 05 -VOP 4004 42 43 15 -15 15 K7 K4 5 E40 E41 V V -VOP = E40 -VOP = E41 03,04,06 05 AVS(+) 4004 44 15 -15 -10 K4 4 E42 V AVS(+) = 10/(E1 – E42) 1000 V/mV AVS(-) 4004 45 15 -15 10 K4 4 E43 V AVS(-) = 10/(E43 – E2) 03,04, 05,06 03,04, 1000 V/mV VIO 4001 46 5 +VOP 4004 -25 -80 10 11.5 TA = +125C -VOP 4004 IOS(-) 3011 38 ICC 3005 4 +VOP TA = +25C See footnotes at end of table. 3/ See fig. 4 15 -15 0 47 48 15 -15 -15 K7 K4 49 50 15 -15 15 K7 K4 E44 V VIO = E44/1000 5 E45 E46 V V +VOP = E45 +VOP = E46 05,06 03,05,06 04 03,04,06 05 5 E47 E48 V V -VOP = E47 -VOP = E48 03,04,06 05 -60 70 mA 6 mA 10 11.5 V “ -10 -11.5 25 80 “ “ V V “ -10 -11.5 “ “ MIL-M-38510/135G 25 15 Unit Device type TABLE III. Group A inspection for device types 03, 04, 05, and 06 – Continued. Subgroup 5 Symbol VIO/T MILSTD883 method 4001 Test no. 15 Notes 1/ See fig. 4 4/ Adapter pin number Energized Measured pin relays 1 2 3 No. Value Units Device type Equation VIO / T = (E14 – E44)/100(1000) Limits Min Max 03,05,06 -0.6 0.6 04 03,04, 05,06 03,04, -1.0 600 1.0 AVS(+) 4004 51 15 -15 -10 K4 4 E49 V AVS(+) = 10/(E15 – E49) AVS(-) 4004 52 15 -15 10 K4 4 E50 V AVS(-) = 10/(E50 – E15) 6 +VOP 4004 53 54 15 -15 -15 K7 K4 5 E51 E52 V V +VOP = E51 +VOP = E52 05,06 03,04,06 10 05 11.5 TA = -55C -VOP 4004 55 56 15 -15 15 K7 K4 5 E53 E54 V V -VOP = E53 -VOP = E54 03,04,06 05 VIO/T 4001 28 VIO / T = (E26 – E44) / 100(1000) 03,05,06 04 03,04, 05,06 03,04, TA = +125C See fig. 4 4/ 4004 57 15 -15 -10 K4 4 E55 V AVS(+) = 10/(E27 – E55) AVS(-) 4004 58 15 -15 10 K4 4 E56 V AVS(-) = 10/(E56 – E27) 7 SR(+) 4002 59 TA = +25C SR(-) 4002 60 En 61 0 15 -15 0 K4,K9, K10 K4,K9, K10 5 5 VO(+), t(+) VO(-), t(-) E57 V / s SR(+) = VO(+) / t(+) V / s SR(-) = VO(-) / t(-) nV / En = E57 Hz fO = 100 Hz fO = 1 kHz see fig. 6 See fig. 7 E59 En = E59 E60 VPP fO = 10 Hz E61 pA / 66 fO = 100 Hz E62 In = {[(E62) – (E58) – (1.64 x 10 67 fO = 1 kHz see fig. 6 E63 In = {[(E63) – (E59) – (1.64 x 10 Enpp 64 In 65 See footnotes at end of table. -15 En = E58 63 TA = +25C fO = 10 Hz 15 E58 62 9 5/ 6/, 7/ 5/ 6/, 7/ 05,06 03,04,06 05 03,04,06 05 03,05 04 06 03,05 04,06 03,05 04 06 Hz Enpp = E60 / 50000 03,05 04 06 2 2 -15 -10 In = {[(E61) – (E57) – (1.64 x 10 )] 10 } 0.5 03,04,05 06 2 2 -15 2 2 -15 )] 10 )] 10 -10 -10 } 0.5 } 0.5 03,05 04 06 03,05 04 06 V/C V/mV 600 V/mV V “ -10 -11.5 “ “ -0.6 0.6 V/C -1.0 600 1.0 V/mV 600 V/mV 1.7 11 1.7 11 V/s V/s 5.5 6.0 8 4.0 5.0 3.8 3.9 4 nV / .18 .20 .375 5.66 35 VPP 1.88 2.1 18 0.84 0.89 5 Hz pA / Hz MIL-M-38510/135G 26 AVS(+) Unit TABLE III. Group A inspection for device types 03, 04, 05, and 06 – Continued. 1/ All tests apply to figure 3, unless otherwise specified. For devices marked with the “Q” certification mark, the parameters listed herein may be guaranteed if not tested to the limits specified in accordance with the manufacturer’s QM plan. 2/ IIO is calculated using data from previous tests. 3/ IOS(+) and IOS(-) are measured with the output shorted to ground for less than 25 milliseconds. 4/ ΔVIO/Δt is calculated using data from previous tests. 5/ Slew rate can be measured using figure 5. All test signals for figure 3 are shown on figure 5. 6/ The oscillation detector will be disconnected during slew rate tests. 7/ Slew rate: For device types 03, 04, and 06 energize relays K4 and K9. For device type 05 energize relays K4, K9, and K10. MIL-M-38510/135G 27 MIL-M-38510/135G TABLE IV. Group C end-point and group B, class S, electrical parameters. VCM = 0, VCC = 15 V for all device types. TA = 25C for Group C end-point limits, -55C TA +125C for group B, class S, end-point limits. Device 01 Test Limit Device 02 Delta Limit Delta Units Min Max Min Max Min Max Min Max VIO -135 135 -75 75 -300 300 -100 100 V +IIB -5 5 -1 1 -7.5 7.5 -1.5 1.5 nA -IIB -5 5 -1 1 -7.5 7.5 -1.5 1.5 nA Devices 03, 05, and 06 Test Limit Device 04 Delta Limit Delta Units Min Max Min Max Min Max Min Max VIO -135 135 -75 75 -280 280 -100 100 V +IIB -70 70 -10 10 -70 70 -10 10 nA -IIB -70 70 -10 10 -70 70 -10 10 nA 5. PACKAGING 5.1 Packaging requirements. For acquisition purposes, the packaging requirements shall be as specified in the contract or order (see 6.2). When packaging of materiel is to be performed by DoD or in-house contractor personnel, these personnel need to contact the responsible packaging activity to ascertain packaging requirements. Packaging requirements are maintained by the Inventory Control Point's packaging activity within the Military Service or Defense Agency, or within the military service’s system command. Packaging data retrieval is available from the managing Military Department's or Defense Agency's automated packaging files, CD-ROM products, or by contacting the responsible packaging activity. 28 MIL-M-38510/135G 6. NOTES (This section contains information of a general or explanatory nature that may be helpful, but it is not mandatory.) 6.1 Intended use. Microcircuits conforming to this specification are intended for logistic support of existing equipment. 6.2 Acquisition requirements. Acquisition documents should specify the following: a. Title, number, and date of the specification. b. PIN and compliance identifier, if applicable (see 1.2). c. Requirements for delivery of one copy of the conformance inspection data pertinent to the device inspection lot to be supplied with each shipment by the device manufacturer, if applicable. d. Requirements for certificate of compliance, if applicable. e. Requirements for notification of change of product or process to contracting activity in addition to notification to the qualifying activity, if applicable. f. Requirements for failure analysis (including required test condition of method 5003 of MIL-STD-883), corrective action, and reporting of results, if applicable. g. Requirements for product assurance options. h. Requirements for special carriers, lead lengths, or lead forming, if applicable. These requirements should not affect the part number. Unless otherwise specified, these requirements will not apply to direct purchase by or direct shipment to the Government. i. Requirements for "JAN" marking. j. Packaging requirements (see 5.1). 6.3 Qualification. With respect to products requiring qualification, awards will be made only for products which are, at the time of award of contract, qualified for inclusion in Qualified Manufacturers List QML-38535 whether or not such products have actually been so listed by that date. The attention of the contractors is called to these requirements, and manufacturers are urged to arrange to have the products that they propose to offer to the Federal Government tested for qualification in order that they may be eligible to be awarded contracts or orders for the products covered by this specification. Information pertaining to qualification of products may be obtained from DSCC-VQ, P.O. Box 3990, Columbus, Ohio 43128-3990. An online listing of products qualified to this specification may be found in the Qualified Products Database (QPD) at https://assist.daps.dla.mil. 6.4 Superseding information. The requirements of MIL-M-38510 have been superseded to take advantage of the available Qualified Manufacturer Listing (QML) system provided by MIL-PRF-38535. Previous references to MIL-M-38510 in this document have been replaced by appropriate references to MIL-PRF-38535. All technical requirements now consist of this specification sheet and MIL-PRF-38535. The MIL-M-38510 specification sheet number and PIN have been retained to avoid adversely impacting existing Government logistics systems and contractor’s parts lists. 6.5 Abbreviations, symbols, and definitions. The abbreviations, symbols, and definitions used herein are defined in MIL-PRF-38535, and MIL-HDBK-1331. 6.6 Logistic support. Lead materials and finishes (see 3.4) are interchangeable. Unless otherwise specified, microcircuits acquired for Government logistic support will be acquired to device class B (see 1.2.2), lead material and finish A (see 3.4). Longer length leads and lead forming should not affect the part number. 29 MIL-M-38510/135G 6.7 Substitutability. The cross-reference information below is presented for the convenience of users. Microcircuits covered by this specification sheet will functionally replace the listed generic-industry type. Generic-industry microcircuit types may not have equivalent operational performance characteristics across military or Government temperature ranges or reliability factors equivalent to MIL-M-38510 device types and may have slight physical variations in relation to case size. The presence of this information should not be deemed as permitting substitution of generic-industry types for MIL-M-38510 types or as a waiver of any of the provisions of MIL-PRF-38535. Military device type Generic-industry type 01 OP-07A 02 OP-07, 714 03 OP-27A 04 OP-227A 05 OP-37A 06 OP-27A 6.8 Changes from previous issue. Marginal notations are not used in this revision to identify changes with respect to the previous issue due to the extent of the changes. Custodians: Army - CR Navy - EC Air Force - 85 NASA - NA DLA - CC Preparing activity: DLA - CC (Project 5962-2010-005) Review activities: Army - MI, SM Navy - AS, CG, MC, SH, TD Air Force - 03, 19, 99 NOTE: The activities listed above were interested in this document as of the date of this document. Since organizations and responsibilities can change, you should verify the currency of the information above using the ASSIST Online database at https://assist.daps.dla.mil. 30