DATASHEET

INCH-POUND
MIL-M-38510/122C
26 May 2004
SUPERSEDING
MIL-M-38510/122B
17 September 2003
MILITARY SPECIFICATION
MICROCIRCUITS, LINEAR, HIGH SLEW RATE OPERATIONAL AMPLIFIERS, MONOLITHIC SILICON
Reactivated for new design as of 17 September 2003. May be used for either new or existing design acquisition.
This specification is approved for use by all Departments and Agencies of the Department of Defense.
The requirement for acquiring the product herein shall consist of this specification sheet and MIL-PRF-38535.
1. SCOPE
1.1 Scope. This specification covers the detail requirements for monolithic silicon, operational amplifier
microcircuit. Two product assurance classes and a choice of case outlines and lead finishes are provided and are
reflected in the complete part number. For this product, the requirements of MIL-M-38510 have been superseded by
MIL-PRF-38535, (see 6.3)
1.2 Part or Identifying Number (PIN). The PIN is in accordance with MIL-PRF-38535, and as specified herein.
1.2.1 Device types. The device types are as follows:
Device type
01
02
03
04
05
06
07
08
Circuit
Single operational amplifier, internally compensated, low power,
high performance
Single operational amplifier, internally compensated, high impedance,
wide band
Single operational amplifier, externally compensated, high impedance,
wide band
Single operational amplifier, internally compensated, precision,
high slew rate
Single operational amplifier, internally compensated, high slew rate
Single operational amplifier, externally compensated, high slew rate
Single operational amplifier, internally compensated, high speed,
precision
Single operational amplifier, internally compensated, high speed,
fast-settling, precision
1.2.2 Device class. The device class is the product assurance level as defined in MIL-PRF-38535.
1.2.3 Case outline. The case outlines are as designated in MIL-STD-1835 and as follows:
Outline letter
G
H
P
2
Descriptive designator
MACY1-X8
GDFP1-F10 or CDFP2-F10
GDIP1-T8 or CDIP2-T8
CQCC1-N20
Terminals
8
10
8
20
Package style
Can
Flat pack
Dual-in-line
Square leadless chip carrier
Comments, suggestions, or questions on this document should be addressed to: Commander, Defense
Supply Center Columbus, ATTN: DSCC-VAS, 3990 East Broad St., Columbus, OH 43216-5000, or emailed
to [email protected]. Since contact information can change, you may want to verify the currency of this
address information using the ASSIST Online database at www.dodssp.daps.mil.
AMSC N/A
FSC 5962
MIL-M-38510/122C
1.3 Absolute maximum ratings.
Supply voltage range .......................................................................
Input voltage range ..........................................................................
Differential input voltage range: 2/ 3/
Device type 01 ..............................................................................
Device types 02 and 03 ................................................................
Device types 04, 05, and 06 .........................................................
Device types 07 and 08 ................................................................
Storage temperature range ..............................................................
Lead temperature (soldering, 10 seconds) ......................................
Junction temperature (TJ) ................................................................
±20 V dc 1/
±15 V dc 2/ 3/
±18 V dc
±12 V dc
±15 V dc
±20 V dc
-65°C to +150°C
+300°C.
+175°C
1.4 Recommended operating conditions.
Supply voltage range ....................................................................... ±15 V dc
Ambient operating temperature range (TA) ...................................... -55°C to +125°C
1.5
Power and thermal characteristics.
Case outlines
G
H
P
2
Maximum allowable power
dissipation
Maximum
Maximum
θJC
θJA
300 mW at TA = +125°C
300 mW at TA = +125°C
40°C/W
150°C/W
45°C/W
150°C/W
500 mW at TA = +125°C
500 mW at TA = +125°C
26°C/W
119°C/W
30°C/W
120°C/W
2. APPLICABLE DOCUMENTS
2.1 General. The documents listed in this section are specified in sections 3, 4, or 5 of this specification. This
section does not include documents cited in other sections of this specification or recommended for additional
information or as examples. While every effort has been made to ensure the completeness of this list, document
users are cautioned that they must meet all specified requirements of documents cited in sections 3, 4, or 5 of this
specification, whether or not they are listed.
2.2 Government documents.
2.2.1 Specifications, standards, and handbooks. The following specifications and standards form a part of this
specification to the extent specified herein. Unless otherwise specified, the issues of these documents are those,
cited in the solicitation or contract.
DEPARTMENT OF DEFENSE SPECIFICATIONS
MIL-PRF-38535
- Integrated Circuits (Microcircuits) Manufacturing, General Specification for.
DEPARTMENT OF DEFENSE STANDARDS
MIL-STD-883
MIL-STD-1835
- Test Method Standard for Microelectronics.
- Interface Standard Electronic Component Case Outlines.
(Copies of these documents are available online at http://assist.daps.dla.mil/quicksearch/ or www.dodssp.daps.mil
or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 191115094.)
______
1/ Voltages in excess of these may be applied for short term tests if voltage difference does not exceed 40 volts.
2/ For supply voltages less than ±15 V dc, the absolute maximum input voltage is equal to the supply voltage
(minus 3 volts for device types 01, 02, and 03).
3/ For supply voltages less than ±20 V dc, the absolute maximum input voltage is equal to the supply voltage
for device types 07 and 08.
2
MIL-M-38510/122C
2.3 Order of precedence. In the event of a conflict between the text of this specification and the references cited
herein the text of this document takes precedence. Nothing in this document, however, supersedes applicable laws
and regulations unless a specific exemption has been obtained.
3. REQUIREMENTS
3.1 Qualification. Microcircuits furnished under this specification shall be products that are manufactured by a
manufacturer authorized by the qualifying activity for listing on the applicable qualified manufacturers list before
contract award (see 4.3 and 6.4).
3.2 Item requirements. The individual item requirements shall be in accordance with MIL-PRF-38535 and as
specified herein or as modified in the device manufacturer's Quality Management (QM) plan. The modification in the
QM plan shall not affect the form, fit, or function as described herein.
3.3 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as
specified in MIL-PRF-38535 and herein.
3.3.1 Terminal connections. The terminal connections shall be as specified on figure 1.
3.3.2 Schematic circuits. The schematic circuits shall be maintained by the manufacturer and made available to
the qualifying activity and the preparing activity upon request.
3.3.3 Case outlines. The case outlines shall be as specified in 1.2.3.
3.4 Lead material and finish. The lead material and finish shall be in accordance with MIL-PRF-38535 (see 6.6).
3.5 Electrical performance characteristics. The electrical performance characteristics are as specified in table I,
and apply over the full recommended ambient operating temperature range –55°C to +125°C and for supply voltages
of ±15 V dc, unless otherwise specified (see table I).
3.5.1 Offset null circuits. Each amplifier having nulling inputs shall be capable of being nulled 1 mV beyond
0.0 volt at –55°C ≤ TA ≤ 125°C using the circuit of figure 2.
3.5.2 Frequency compensation. Device types 01, 02, 04, 05, and 08 shall be free of oscillation when operated in a
unity gain noninverting mode with no external compensation and a source resistance of ≤ 10 kΩ, and when operated
in any test condition specified herein. Device type 03 shall be free of oscillation when operated in a closed loop gain
of 5 or greater with no external compensation. Device type 07 shall be free of oscillation when operated in a closed
loop gain of 3 or greater with no external compensation.
3.5.3 Output short circuit current test. Output short circuit current test (IOS) shall not be performed on any device
types. Current density requirements of MIL-PRF-38535, junction temperature (TJ) or both are exceeded under output
short circuit conditions.
3.6 Electrical test requirements. Electrical test requirements for each device class shall be the subgroups
specified in table II. The subgroups of table II which constitute the minimum electrical test requirements for
screening, qualification, and quality conformance by device class are specified in table II.
3.7 Marking. Marking shall be in accordance with MIL-PRF-38535.
Special marking for device classes B and S. The date code may be reduced to 3 digits (for example, 026 where 0 is
the last digit of the year and 26 is the seal week) for device classes B and S.
3.7.1 Serialization. All class S devices shall be serialized in accordance with MIL-PRF-38535.
3.7.2 Correctness of indexing and marking. All devices shall be subjected to the final electrical tests specified in
table II after part marking to verify that they are correctly indexed and identified by PIN. Optionally, an approved
electrical test may be devised especially for this requirement.
3.8 Microcircuit group assignment. The devices covered by this specification shall be in microcircuit group
number 49 (see MIL-PRF-38535, appendix A).
3
MIL-M-38510/122C
TABLE I. Electrical performance characteristics.
Test
Symbol
Conditions
-55°C ≤ TA ≤ +125°C
unless otherwise specified
Group A
subgroups
see 3.5 and figure 3
Input offset voltage 2/
VIO
RS = 100 Ω
VIO
Input offset voltage
temperature sensitivity
∆VIO /
∆T
TA = +25°C,
3/
∆TA from –55°C to +25°C
∆TA from +25°C to +125°C
Input offset current
2/ 4/
Max
01
-3.0
3.0
02,03
-4.0
4.0
04
-5.0
5.0
05,06
-8.0
8.0
07,08
-1.0
1.0
01
-5.0
5.0
02,03
-6.0
6.0
04
-8.0
8.0
05,06
-10.0
10.0
07,08
-2.0
2.0
1
07,08
-1.5
1.5
mV
13
01,02,
03
-15.0
15.0
µV/°C
04,05,
06
-30.0
30.0
07,08
-10
10
01,02,
03
-15.0
15.0
04,05,
06
-30.0
30.0
07,08
-10
10
01
-10.0
10.0
02,03
-15.0
15.0
04,05,
06
-25.0
25.0
07,08
-0.4
+0.4
01,02,
03
-30.0
30.0
04,05,
06
-50.0
50.0
07,08
-1.0
+1.0
13
1
IIO
2,3
See footnotes at end of table.
4
Unit
Min
1
(end point limits)
Limits
1/
2,3
Input offset voltage
Device
type
mV
nA
MIL-M-38510/122C
TABLE I. Electrical performance characteristics – Continued.
Test
Symbol
Conditions
-55°C ≤ TA ≤ +125°C
unless otherwise specified
Group A
subgroups
Device
type
see 3.5 and figure 3
Input offset current 5/
temperature sensitivity
∆IIO / ∆T
13
TA = -55°C
13
TA = +125°C
Input bias current
2/ 4/
1
+IIB
+VCM = -10 V, 0 V
Input bias current
2/ 4/
1
-IIB
+VCM = -10 V, 0 V
Max
01
-200
200
02,03
-100
100
04,05,
06
-400
400
07,08
-20
20
01,02,
03
-100
100
04,05,
06
-400
400
07,08
-20
20
01
-20.0
20.0
02
-10.0
10.0
03
-15.0
15.0
04,05,
06
1.0
200.0
07,08
-0.2
0.2
-1.0
1.0
01
-50.0
50.0
02,03
-30.0
30.0
04,05,
06
1.0
400.0
07,08
-20.0
20.0
01
-20.0
20.0
02
-10.0
10.0
03
-15.0
15.0
04,05,
06
1.0
200.0
07,08
-0.2
0.2
-1.0
1.0
01
-50.0
50.0
02,03
-30.0
30.0
+VCM = +10 V
2,3
See footnotes at end of table.
5
Unit
Min
+VCM = +10 V
2,3
Limits
pA/°C
nA
nA
MIL-M-38510/122C
TABLE I. Electrical performance characteristics – Continued.
Test
Symbol
Conditions
-55°C ≤ TA ≤ +125°C
unless otherwise specified
Group A
subgroups
Device
type
Min
Max
2,3
04,05,
06
1.0
400.0
07,08
-20.0
20.0
1
07,08
-1.0
1.0
4,5,6
01
86
02,03,
04,05,
06
80
07,08
84
01
86
02,03,
04,05,
06
80
07,08
84
01
86
02,03,
04,05,
80
see 3.5 and figure 3
Input bias current
2/ 4/
-IIB
±IIB
Input bias current
TA = +25°C,
3/
(end point limits)
Power supply rejection
ratio
+PSRR
-PSRR
Input voltage common
mode rejection ratio
CMRR
+VCC = 10 V, 20 V
-VCC = -10 V, -20 V
4,5,6
+VCC = 5 V, 25 V,
-VCC = -25 V, -5 V
Limits
Unit
nA
nA
dB
dB
06,08
Input offset voltage
adjustment
6/ 7/
1
+VIO
(ADJ)
2,3
See footnotes at end of table.
6
07
84
01
4.0
02,03
5.0
04
6.0
05,06
9.0
07
2.5
01
6.0
02,03
7.0
04
9.0
05,06
11.0
07
3.0
mV
MIL-M-38510/122C
TABLE I. Electrical performance characteristics – Continued.
Test
Symbol
Conditions
-55°C ≤ TA ≤ +125°C
unless otherwise specified
Group A
subgroups
Device
type
see 3.5 and figure 3
Input offset voltage
adjustment
6/ 7/
Min
1
-VIO
(ADJ)
2,3
Supply current 2/
ICC
±VCC = ±15.0 V
1
2,3
Output voltage at minimum
rated output current
+VOUT
Limits
-4.0
02,03
-5.0
04
-6.0
05,06
-9.0
07
-2.5
01
-6.0
02,03
-7.0
04
-9.0
05,06
-11.0
07
-3.0
01
0.15
02,03
3.7
04,05,
06,08
6.0
07
7.5
01
0.20
02,03
4.0
04,05,
06
6.5
07
7.5
08
6.0
1
All
10.0
VOUT at –5 mA
2,3
01,04,
05,06,
07,08
10.0
02,03
10.0
VOUT at –10 mA
See footnotes at end of table.
7
Max
01
VOUT at –10 mA
Unit
mV
mA
V
MIL-M-38510/122C
TABLE I. Electrical performance characteristics – Continued.
Test
Symbol
Conditions
-55°C ≤ TA ≤ +125°C
unless otherwise specified
Group A
subgroups
Device
type
see 3.5 and figure 3
Output voltage at minimum
rated output current
-VOUT
Min
+VOP
1
All
-10.0
VOUT at 5 mA
2,3
01,04,
05,06,
07,08
-10.0
02,03
-10.0
1
RL = 2 kΩ
2,3
-VOP
1
RL = 2 kΩ
2,3
Open loop voltage
gain
6/
+AVS
VOUT = ±10 V, 0 V;
and
RL = 2 kΩ
-AVS
See footnotes at end of table.
8
4
01
12.0
02,03,
04,05,
06
10.0
07,08
11.5
01,07,
08
11.0
02,03,
04,05,
06
10.0
-12.0
02,03,
04,05,
06
-10.0
07,08
-11.5
01,07,
08
-11.0
02,03,
04,05,
06
-10.0
200.0
02,03,
07,08
100.0
04
20.0
05,06
10.0
V
V
01
01
Unit
Max
VOUT at 10 mA
VOUT at 10 mA
Output voltage swing
Limits
V/mV
MIL-M-38510/122C
TABLE I. Electrical performance characteristics – Continued.
Test
Symbol
Conditions
-55°C ≤ TA ≤ +125°C
unless otherwise specified
Group A
subgroups
Device
type
see 3.5 and figure 3
Open loop voltage
gain
6/
+AVS
VOUT = ±10 V, 0 V;
and
RL = 2 kΩ
Min
5,6
-AVS
Slew rate
7
01
100.0
02,03,
07,08
70.0
04
15.0
05,06
7.50
01
10.0
+SR
AV = 5, see figure 3
and
AV = 1, see figure 3
02
4.0
+SR
AV = 5, see figure 3
03
25.0
AV = 1, see figure 3
04
25.0
AV = 1, see figure 3
05
50.0
AV = 3, see figure 3
06,07
100.0
AV = 1, see figure 3
08
45.0
01
8.0
AV = 1, see figure 3
02
3.0
AV = 5, see figure 3
03
20.0
AV = 1, see figure 3
04
20.0
AV = 1, see figure 3
05
45.0
AV = 3, see figure 3
06
84.0
AV = 3, see figure 3
07
80.0
AV = 1, see figure 3
08
40.0
AV = 5, see figure 3
Transient response:
(Rise time and fall time)
Limits
8
V/mV
V/µs
60.0
AV = 5, see figure 3
03
45.0
AV = 1, see figure 3
04,05
50.0
AV = 3, see figure 3
06,07
50.0
AV = 1, see figure 3
08
50.0
AV = 1, see figure 3
and
TR(tf)
See footnotes at end of table.
9
7
Max
02
TR(tr)
Unit
ns
MIL-M-38510/122C
TABLE I. Electrical performance characteristics – Continued.
Test
Symbol
Conditions
-55°C ≤ TA ≤ +125°C
unless otherwise specified
Group A
subgroups
Device
type
see 3.5 and figure 3
Transient response:
Rise time and fall time
Transient response:
Overshoot
Min
70.0
AV = 5, see figure 3
03
60.0
AV = 1, see figure 3
04,05
60.0
AV = 3, see figure 3
06,07
55.0
AV = 1, see figure 3
08
60.0
02,08
40.0
AV = 1, see figure 3
and
TR(tf)
8
7
TR(+OS)
AV = 1, see figure 3
and
AV = 5, see figure 3
03
70.0
TR(-OS)
AV = 1, see figure 3
04,05
40.0
AV = 3, see figure 3
06,07
40.0
02,08
50.0
AV = 5, see figure 3
03
70.0
AV = 1, see figure 3
04,05
50.0
AV = 3, see figure 3
06,07
45.0
8
12
4.0
+tS
AV = 1, see figure 4
and
AV = 5, see figure 4
3.0
-tS
AV = 1, see figure 4
1.2
AV = 1, see figure 4
1.0
AV = 3, see figure 4
1.1
AV = 1, see figure 4
1.1
See footnotes at end of table.
10
Unit
Max
02
TR(tr)
AV = 1, see figure 3
Settling time
Limits
ns
%
µs
MIL-M-38510/122C
TABLE I. Electrical performance characteristics – Continued.
1/
Device type 06 shall be free of oscillation when operated at gains of 3 or greater with no external compensation.
2/
Tests at common mode VCM = 0, VCM = -10 V, and VCM = +10 V.
3/
See table IV for end-point test conditions.
4/
Device type 07 is not tested at TA = -55°C
5/
Input offset current temperature sensitivity is guaranteed by IIO end-point limits at TA = -55°C and +125°C.
6/
Note that gain is not specified at VIO(ADJ) extremes. Some gain reduction is usually seen at VIO(ADJ) extremes.
For closed loop application (closed loop gain less than 1,000), the open loop tests (AVS) prescribed herein
should guarantee a positive, reasonable linear, transfer characteristic. They do not, however, guarantee that the
open loop is linear, or even positive, over the operating range. If either of these requirements exist (positive
open loop gain or open loop gain linearity), they should be specified in the contract or purchase order as
additional requirements (see 6.2).
7/
The limits specified are for devices with offset voltages equal to the maximum limit. For devices with offset
voltages less than the limit, offset adjust capability will be tested to guarantee adjustability to 1 mV beyond zero.
11
MIL-M-38510/122C
TABLE II. Electrical test requirements.
Subgroups (see table III)
Class S
Class B
devices
devices
MIL-PRF-38535
test requirements
Interim electrical parameters
1
1
Final electrical test parameters
1*, 2, 3, 4
1*, 2, 3, 4
Group A test requirements
1, 2, 3, 4, 5,
6, 7, 8, 12, 13
1, 2, 3 and table IV
delta limits
1, 2, 3 and table IV
delta limits
1, 2, 3
1, 2, 3, 4, 5,
6, 7, 8, 12, 13
N/A
Group B electrical test parameters when
Using the method 5005 QCI option
Group C end-point electrical parameters
Group D end-point electrical
parameters
1 and table IV
delta limits
1
*PDA applies to subgroup 1.
4. VERIFICATION.
4.1 Sampling and inspection. Sampling and inspection procedures shall be in accordance with MIL-PRF-38535 or
as modified in the device manufacturer’s Quality Management (QM) plan. The modification in the QM plan shall not
effect the form, fit, or function as function as described herein.
4.2 Screening. Screening shall be in accordance with MIL-PRF-38535, and shall be conducted on all devices prior
to qualification and quality conformance inspection. The following additional criteria shall apply:
a.
The burn-in test duration, test condition, and test temperature, or approved alternatives shall be as specified
in the device manufacturer's QM plan in accordance with MIL-PRF-38535. The burn-in test circuit shall be
maintained under document control by the device manufacturer's Technology Review Board (TRB) in
accordance with MIL-PRF-38535 and shall be made available to the acquiring or preparing activity upon
request. The test circuit shall specify the inputs, outputs, biases, and power dissipation, as applicable, in
accordance with the intent specified in test method 1015 of MIL-STD-883.
b.
Interim and final electrical test parameters shall be as specified in table II, except interim electrical
parameters test prior to burn-in is optional at the discretion of the manufacturer.
c.
Additional screening for space level product shall be as specified in MIL-PRF-38535.
4.3 Qualification inspection. Qualification inspection shall be in accordance with MIL-PRF-38535.
12
MIL-M-38510/122C
4.4 Technology Conformance inspection (TCI). Technology conformance inspection shall be in accordance with
MIL-PRF-38535 and herein for groups A, B, C, and D inspections (see 4.4.1 through 4.4.4).
4.4.1 Group A inspection. Group A inspection shall be in accordance with table III of MIL-PRF-38535 and as
follows:
a.
Tests shall be as specified in table II herein.
b.
Subgroups 9, 10, and 11 shall be omitted.
c.
Subgroup 12 shall be added to group A inspection for as specified in table III herein. Subgroup 12
shall be performed for initial qualification and after major process or design changes using a sample
of 15 devices with no failure allowed.
d.
The acceptable sample number for subgroup 13 should be 32 devices with 0 failures. If the input offset
voltage and current temperature sensitivities (computed from group A, subgroups 1, 2, and 3 data)
indicate a failure (one device) out of an acceptable sample number of 32 devices for subgroup 13,
the lot should be 100 percent electrically retested for the parameters in subgroup 13, and all temperature
sensitive rejects should be removed. No re-sampling of the lot is required if the original sample passed
the other group A tests.
4.4.2 Group B inspection. Group B inspection shall be in accordance with table II of MIL-PRF-38535.
4.4.3 Group C inspection. Group C inspection shall be in accordance with table IV of MIL-PRF-38535 and as
follows:
a.
End point electrical parameters shall be as specified in table II herein. Delta limits shall apply for class S
devices.
b.
The steady-state life test duration, test condition, and test temperature, or approved alternatives shall be as
specified in the device manufacturer's QM plan in accordance with MIL-PRF-38535. The burn-in test circuit
shall be maintained under document control by the device manufacturer's Technology Review Board (TRB)
in accordance with MIL-PRF-38535 and shall be made available to the acquiring or preparing activity upon
request. The test circuit shall specify the inputs, outputs, biases, and power dissipation, as applicable, in
accordance with the intent specified in test method 1005 of MIL-STD-883.
4.4.4 Group D inspection. Group D inspection shall be in accordance with table V of MIL-PRF-38535. End point
electrical parameters shall be as specified in table II herein.
4.5 Methods of inspection. Methods of inspection shall be specified in the appropriate tables. Electrical test
circuits as prescribed herein or in the referenced test methods of MIL-STD-883 shall be acceptable. Other test
circuits shall require the approval of the qualifying activity.
4.5.1 Voltage and current. All voltage values given, except the input offset voltage (or differential voltage) are
referenced to the external zero reference level of the supply voltage. Currents given are conventional current and
positive when flowing into the referenced terminal.
4.5.2 Life test cooldown procedure. When devices are measured at +25°C following application of the steadystate life or burn-in test condition, they shall be cooled to within +10°C of their power stable condition at room
temperature prior to removal of the bias.
4.6 Inspection of packaging. Inspection of packaging shall be in accordance with MIL-PRF-38535.
13
MIL-M-38510/122C
Figure 1. Terminal connections.
14
MIL-M-38510/122C
Figure 1. Terminal connections – Continued.
15
MIL-M-38510/122C
Device types 01 through 06
Device types
Value
01
R1 = 1 MΩ
02, 03
R1 = 100 kΩ
04, 05, 06
R1 = 20 kΩ
FIGURE 2. Offset null circuit.
16
MIL-M-38510/122C
NOTE: Potentiometer, 10 kΩ to 100 kΩ.
FIGURE 2. Offset null circuit – Continued.
17
MIL-M-38510/122C
FIGURE 3. Test circuit for static and dynamic tests.
18
-15
-15
-15
-15
-15
-15
-15
-15
-15
-15
15
15
15
15
15
15
15
15
15
15
15
-SR
-15
-15
0
10
0
-10
See
note 6
See
note 7
Apply (in volts)
-VCC
VDC
VAC
-15
0
-5
10
-25
-10
-15
0
-5
10
-25
-10
-15
0
-5
10
-25
-10
-15
0
-5
10
-25
-10
-15
0
-15
0
-15
0
-10
0
-20
0
-25
-10
-5
10
15
+VCC
15
25
5
15
25
5
15
25
5
15
25
5
15
10
20
15
15
5
25
+VIO(ADJ)
see notes
1 and 3
-VIO(ADJ)
see notes
1 and 3
+VOUT
see note 4
-VOUT
see note 5
+VOP
see note 2
-VOP
see note 2
+AVS
see note 2
-AVS
see note 2
+SR
CMRR
-PSRR
ICC
+PSRR
-IIB
+IIB
IIO
VIO
Parameter
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
2
2
2
1
1
1
2
2
2
1
1
1
1
1
1
1
1
1
1
2
2
2
2
2
2
1
1
1
1
1
1
1
1
1
1
1
S2
S1
1
1
1
1
1
1
1
1
1
1
3
2
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
S3
3
1
1
1
1
3
3
3
2
2
3
3
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
3
2
2
2
2
3
2
2
1
1
3
3
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
Switch positions
S4
S5
1
2
2
2
2
1
1
1
1
1
1
1
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
S6
2
1
1
1
1
2
3
3
3
3
2
2
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
S7
1
1
1
1
1
1
3
3
2
2
3
3
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
S8
A2
E25
E26
E27
E28
A1
E24
E23
E22
E21
E20
E19
E13
E14
E15
E16
E17
E18
E1
E2
E3
E4
E5
E6
E7
E8
E9
E10
E11
E12
19
V /µs
V /µs
+SR = ∆V / ∆T
-SR = ∆V / ∆T
See
notes
See
notes
V/mV
-AVS = 10 / (E27 – E28)
V
V/mV
+AVS = 10 / (E26 – E25)
V
V
V
V
mV
mV
dB
dB
mA
dB
nA
nA
nA
mV
Unit
V
V
V
V
V
V
V
mA
V
-VIO(ADJ) = (E1 – E20)
IIO = (E1 – E4) x 100,
(E2 – E5) x 100,
(E3 – E6) x 100
+IIB = (E1 – E7) x 100,
(E2 – E8) x 100,
(E3 – E9) x 100
-IIB = (E1 – E10) x 100,
(E2 – E11) x 100,
(E3 – E12) x 100
ICC
+PSRR = 20 log 10
4
(10 /E13 – E14)
-PSRR = 20 log 10
4
(10 /E15 – E16)
CMRR = 20 log 10
4
(2 x 10 /E17 – E18)
+VIO(ADJ) = (E19 – E1)
V
V
VIO = E1, E2, E3
Measured parameter
Equation
V
Measure
Value
Unit
FIGURE 3. Test circuit for static and dynamic tests – Continued.
-0.5
0.5
-0.5
0.5
VIN
Device type 01
MIL-M-38510/122C
MIL-M-38510/122C
NOTES:
1. R1 = 4.0 kΩ, R2 = 1.0 kΩ, R3 = 3.4 kΩ, CL = 100 pF.
2. RLDC = 2.0 kΩ.
3. +VIO(ADJ) if E1 < 0; -VIO(ADJ) if E1 > 0.
4. ILOAD = -10 mA at TA = +25°C, -5 mA at TA = -55°C and TA = +125°C.
5. ILOAD = +10 mA at TA = +25°C, +5 mA at TA = -55°C and TA = +125°C.
6. VAC = -1 V to +1 V, R1 = 4.0 kΩ, R2 = 1.0 kΩ, R3 = 3.4 kΩ, CL = 100 pF.
7. VAC = +1 V to -1 V, R1 = 4.0 kΩ, R2 = 1.0 kΩ, R3 = 3.4 kΩ, CL = 100 pF.
FIGURE 3. Test circuit for static and dynamic tests – Continued.
20
MIL-M-38510/122C
FIGURE 3. Test circuit for static and dynamic tests – Continued.
21
+VIO(ADJ)
see notes
1 and 5
-VIO(ADJ)
see notes
1 and 5
+VOUT
see note 6
-VOUT
see note 7
+VOP
see note 2
-VOP
see note 2
+AVS
see note 2
-AVS
see note 2
CMRR
-PSRR
ICC
+PSRR
-IIB
+IIB
IIO
VIO
Parameter
-VCC
-15
-5
-25
-15
-5
-25
-15
-5
-25
-15
-5
-25
-15
-15
-15
-10
-20
-25
-5
-15
-15
-15
-15
-15
-15
-15
-15
-15
-15
+VCC
15
25
5
15
25
5
15
25
5
15
25
5
15
10
20
15
15
5
25
15
15
15
15
15
15
15
15
15
15
0
10
0
-10
0
10
-10
0
10
-10
0
10
-10
0
10
-10
0
0
0
0
0
-10
10
VAC
Apply (in volts)
VDC
See
note 3
1
1
1
1
1
1
1
1
1
1
1
1
1
2
2
2
2
2
2
1
1
1
1
1
1
1
1
1
1
S1
1
1
1
1
1
1
1
1
1
1
1
1
1
2
2
2
1
1
1
2
2
2
1
1
1
1
1
1
1
S2
1
1
1
1
1
1
1
1
3
2
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
S3
1
1
1
1
3
3
2
2
3
3
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
S4
2
2
2
2
2
2
1
1
3
3
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
S5
2
2
2
2
1
1
1
1
1
1
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
S6
Switch positions
1
1
1
1
3
3
3
3
2
2
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
S7
1
1
1
1
3
3
2
2
3
3
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
S8
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
S9
22
FIGURE 3. Test circuit for static and dynamic tests – Continued.
-0.5
0.5
-0.5
0.5
VIN
Device types 02 and 03
MIL-M-38510/122C
1
1
1
1
1
1
1
1
3
3
See
note 4
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
E25
E26
E27
E28
E24
E23
E22
E21
E20
E19
E13
E14
E15
E16
E17
E18
E1
E2
E3
E4
E5
E6
E7
E8
E9
E10
E11
E12
+AVS = 10 / (E26 – E25)
-AVS = 10 / (E27 – E28)
V
-VIO(ADJ) = (E1 – E20)
V
V
V
V
V
V
V
V
mA
V
V
+VIO(ADJ) = (E19 – E1)
IIO = (E1 – E4) x 100,
(E2 – E5) x 100,
(E3 – E6) x 100
+IIB = (E1 – E7) x 100,
(E2 – E8) x 100,
(E3 – E9) x 100
-IIB = (E1 – E10) x 100,
(E2 – E11) x 100,
(E3 – E12) x 100
ICC
+PSRR = 20 log 10
4
(10 /E13 – E14)
-PSRR = 20 log 10
4
(10 /E15 – E16)
CMRR = 20 log 10
4
(2 x 10 /E17 – E18)
V
V
VIO = E1, E2, E3
Equation
Measured parameter
V
Unit
Measure
Value
V/mV
V/mV
V
V
V
V
mV
mV
dB
dB
mA
dB
nA
nA
nA
mV
Unit
-15
15
15
15
+OS
see note 1
-OS
+SR
see note 1
-SR
-15
15
TR(tr)
see note 1
TR(tf)
-15
-15
15
15
-15
-15
-VCC
+VCC
Parameter
VDC
note 8
See
note 10
See
note 12
See
note 14
See
See
note 8
See
note 10
VAC
Apply (in volts)
note 9
See
note 11
See
note 13
See
note 15
See
See
note 3
See
note 9
See
note 11
1
1
1
1
1
1
1
1
1
1
1
1
S2
1
1
1
1
1
1
S3
3
3
3
3
3
3
S4
3
3
3
3
3
3
S5
1
1
1
1
1
1
S6
Switch positions
2
2
2
2
2
2
S7
1
1
1
1
1
1
S8
2
2
2
2
2
2
S9
23
FIGURE 3. Test circuit for static and dynamic tests – Continued.
VIN
S1
Device types 02 and 03
MIL-M-38510/122C
3
3
3
3
3
See
note 4
3
A6
A5
A4
A3
A2
A1
See
notes
notes
See
See
notes
Unit
Measure
Value
SR = ∆V / ∆T
OS = (Vpeak – Vfinal) x
100 /
Vfinal
TR(tf) = 90% - 10%
TR(tr) = 10% - 90%
Equation
Measured parameter
V/µs
V/µs
%
%
ns
Unit
MIL-M-38510/122C
NOTES:
1. R1 = 1.6 kΩ, R2 = 400 Ω, R3 = 2 kΩ, CL = 50 pF, see above figure.
2. RLDC = 2 kΩ.
3. VAC input for device type 03 only.
4. S9 switch positions for device type 03 only.
5. +VIO(ADJ) if E1 < 0; -VIO(ADJ) if E1 > 0.
6. ILOAD = -10 mA at TA = +25°C, -5 mA at TA = -55°C and TA = +125°C.
7. ILOAD = +10 mA at TA = +25°C, +5 mA at TA = -55°C and TA = +125°C.
8. Input = 0 V to 200 mV, see above figure.
9. Input = 0 V to 40 mV, see above figure.
10. Input = 0 V to -200 mV, see above figure.
11. Input = 0 V to -40 mV, see above figure.
12. Input = -5 V to +5 V, see above figure.
13. Input = -1 V to +1 V, see above figure.
14. Input = +5 V to -5 V, see above figure.
15. Input = +1 V to -1 V, see above figure.
FIGURE 3. Test circuit for static and dynamic tests – Continued.
24
MIL-M-38510/122C
FIGURE 3. Test circuit for static and dynamic tests – Continued.
25
+VIO(ADJ)
see notes
1 and 7
-VIO(ADJ)
see notes
1 and 7
+VOUT
see note 4
-VOUT
see note 5
+VOP
see note 3
-VOP
see note 3
+AVS
see note 3
-AVS
see note 3
CMRR
-PSRR
ICC
+PSRR
-IIB
+IIB
IIO
VIO
Parameter
-VCC
-15
-5
-25
-15
-5
-25
-15
-5
-25
-15
-5
-25
-15
-15
-15
-10
-20
-25
-5
-15
-15
-15
-15
-15
-15
-15
-15
-15
-15
+VCC
15
25
5
15
25
5
15
25
5
15
25
5
15
10
20
15
15
5
25
15
15
15
15
15
15
15
15
15
15
0
10
0
10
0
10
-10
0
10
-10
0
10
-10
0
10
-10
0
0
0
0
0
-10
10
VAC
Apply (in volts)
VDC
See
note 2
1
1
1
1
1
1
1
1
1
1
1
1
1
2
2
2
2
2
2
1
1
1
1
1
1
1
1
1
1
S1
1
1
1
1
1
1
1
1
1
1
1
1
1
2
2
2
1
1
1
2
2
2
1
1
1
1
1
1
1
S2
1
1
1
1
1
1
1
1
3
2
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
S3
1
1
1
1
3
3
2
2
3
3
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
S4
2
2
2
2
2
2
1
1
3
3
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
S5
2
2
2
2
1
1
1
1
1
1
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
S6
Switch positions
1
1
1
1
3
3
3
3
2
2
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
S7
1
1
1
1
3
3
2
2
3
3
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
S8
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
S9
26
FIGURE 3. Test circuit for static and dynamic tests – Continued.
-0.5
0.5
-0.5
0.5
VIN
Device types 04, 05, and 06
MIL-M-38510/122C
1
1
1
1
1
1
1
1
3
3
See
note 6
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
E25
E26
E27
E28
E24
E23
E22
E21
E20
E19
E13
E14
E15
E16
E17
E18
E1
E2
E3
E4
E5
E6
E7
E8
E9
E10
E11
E12
+AVS = 10 / (E26 – E25)
-AVS = 10 / (E27 – E28)
V
-VIO(ADJ) = (E1 – E20)
V
V
V
V
V
V
V
V
mA
V
V
+VIO(ADJ) = (E19 – E1)
IIO = (E1 – E4) x 100,
(E2 – E5) x 100,
(E3 – E6) x 100
+IIB = (E1 – E7) x 100,
(E2 – E8) x 100,
(E3 – E9) x 100
-IIB = (E1 – E10) x 100,
(E2 – E11) x 100,
(E3 – E12) x 100
ICC
+PSRR = 20 log 10
4
(10 /E13 – E14)
-PSRR = 20 log 10
4
(10 /E15 – E16)
CMRR = 20 log 10
4
(2 x 10 /E17 – E18)
V
V
VIO = E1, E2, E3
Equation
Measured parameter
V
Unit
Measure
Value
V/mV
V/mV
V
V
V
V
mV
mV
dB
dB
mA
dB
nA
nA
nA
mV
Unit
-15
15
15
15
+OS
see note 1
-OS
+SR
see note 1
-SR
-15
15
TR(tr)
see note 1
TR(tf)
-15
-15
15
15
-15
-15
-VCC
+VCC
Parameter
note 8
See
note 10
See
note 12
See
note 10
See
See
note 8
See
note 10
VAC
Apply (in volts)
VDC
note 9
See
note 11
See
note 13
See
note 11
See
See
note 2
See
note 9
See
note 11
1
1
1
1
1
1
S1
1
1
1
1
1
1
S2
1
1
1
1
1
1
S3
3
3
3
3
3
3
S4
3
3
3
3
3
3
S5
1
1
1
1
1
1
S6
Switch position
2
2
2
2
2
2
S7
1
1
1
1
1
1
S8
2
2
2
2
2
2
S9
27
FIGURE 3. Test circuit for static and dynamic tests – Continued.
VIN
Device types 04, 05, and 06
MIL-M-38510/122C
3
3
3
3
3
See
note 6
3
A6
A5
A4
A3
A2
A1
See
notes
notes
See
See
notes
Unit
Measure
Value
SR = ∆V / ∆T
OS = (Vpeak – Vfinal) x
100 /
Vfinal
TR(tf) = 90% - 10%
TR(tr) = 10% - 90%
Equation
Measured parameter
V/µs
V/µs
%
%
ns
Unit
MIL-M-38510/122C
NOTES:
1. R1 = 1.33 kΩ, R2 = 667 Ω, R3 = 2 kΩ, CL = 50 pF, see above figure.
2. VAC input for device type 06 only.
3. RLDC = 2 kΩ.
4. ILOAD = -10 mA at TA = +25°C, -5 mA at TA = -55°C and TA = +125°C.
5. ILOAD = +10 mA at TA = +25°C, +5 mA at TA = -55°C and TA = +125°C.
6. S9 switch positions for device type 06 only.
7. +VIO(ADJ) if E1 < 0; -VIO(ADJ) if E1 > 0.
8. Input = 0 V to 200 mV, see above figure.
9. Input = 0 V to +66.7 mV, see above figure.
10. Input = 0 V to -200 mV, see above figure.
11. Input = 0 V to –66.7 mV, see above figure.
12. Input = -5 V to +5 V, see above figure.
13. Input = -1.67 V to +1.67 V, see above figure.
14. Input = +5 V to -5 V, see above figure.
15. Input = +1.67 V to –1.67 V, see above figure.
FIGURE 3. Test circuit for static and dynamic tests – Continued.
28
MIL-M-38510/122C
Device type 07
FIGURE 3. Test circuit for static and dynamic tests – Continued.
29
MIL-M-38510/122C
Device type 08
FIGURE 3. Test circuit for static and dynamic tests – Continued.
30
-15
-5
-25
-15
-5
-25
-15
-5
-25
-15
-15
-10
-20
15
25
5
15
25
5
15
25
5
10
20
15
15
IIO
see note 1
+IIB
see note 1
-IIB
see note 1
-15
-15
-15
15
15
15
-VOP
+AVS
-AVS
-15
-15
15
15
+VOP
-15
-15
15
15
-ICC
-15
15
-VIO(ADJ)
+ICC
-15
15
+VIO(ADJ)
CMRR
-PSRR
+PSRR
VIO
-VCC
-15
-5
-25
Apply (in volts)
+VCC
15
25
5
Parameter
0
-10
+10
+20
-20
0
0
0
0
0
-10
10
0
0
0
0
0
-10
10
C
C
C
C
C
C
C
C
C
0
0
0
C
C
C
C
C
C
C
0
0
0
C
C
C
0
10
-10
0
10
-10
S1
V
0
0
0
0
0
0
0
C
C
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
C
C
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
S4
C
C
C
C
C
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
S5
Switch positions
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
C = Closed
S6
S7
0
0
0
0
0
0
0
0
0
C
C
C
0
0
0
0
C
C
C
C
C
C
0
0
0
S8
E19
E20
E21
A2
-ICC
A1
+ICC
E18
E17
E13
E14
E15
E16
E7
E8
E9
E4
E5
E6
E1
E2
E3
Value
V
V
V
V
V
mA
mA
V
V
V
V
V
V
V
Unit
Measure
31
+IIB = (E7 – E1) / 1000 / 10 MΩ
+IIB = (E8 – E2) / 1000 / 10 MΩ
+IIB = (E9 – E3) / 1000 / 10 MΩ
IIO = (E4 – E1) / 1000 / 10 MΩ
IIO = (E5 – E2) / 1000 / 10 MΩ
IIO = (E6 – E3) / 1000 / 10 MΩ
VIO = E1 / 1000
VIO = E2 / 1000
VIO = E3 / 1000
Equation
Measured parameter
-AVS = 10 / ((E21 – E19) / 1000)
+AVS = 10 / ((E20 – E19) / 1000)
-VOP = A2
+VOP = A1
-ICC = -ICC
+ICC = +ICC
-VIO(ADJ) = E18 / 1000
+VIO(ADJ) = E17 / 1000
CMRR = 20 log (20 / (E3 – E2) / 1000))
-PSRR = 20 log 10 (1000 / (E16 – E15))
-IIB = (E4 + E7) / 1000 / 10 MΩ
-IIB = (E5 + E8) / 1000 / 10 MΩ
-IIB = (E6 + E9) / 1000 / 10 MΩ
+PSRR = 20 log 10 (1000 / (E14 – E13))
FIGURE 3. Test circuit for static and dynamic tests – Continued.
C
C
C
C
C
C
C
C
C
C
C
C
C
C
C
C
0
0
0
0
0
0
C
C
C
O = Open
S2
S3
Device type 07 and 08
MIL-M-38510/122C
V/mV
V/mV
V
V
mA
mA
mV
mV
dB
dB
dB
pA
pA
pA
mV
Unit
-15
-15
-15
15
15
TR(+OS)
TR(-OS)
0
-15
15
15
-15
15
TR(tf)
0
-15
15
0
0
0
0
0
-15
C
C
C
C
C
C
C
C
0
15
S1
V
-VCC
-15
+VCC
15
Apply (in volts)
+VOUT
see note 2
-VOUT
see note 2
+SR
see note 3
-SR
see note 4
TR(tr)
Parameter
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
S4
0
0
0
0
0
0
0
0
S5
Switch positions
C
C
C
C
C
C
0
0
0
0
0
0
0
0
0
0
C = Closed
S6
S7
0
0
0
0
0
0
0
0
S8
A8
A7
A6
A5
B2
B1
A4
A3
Value
See
notes
notes
See
See
notes
V
V
Unit
Measure
32
V/µs
-SR = ∆V / ∆T
TR(tf) = t90% - t10%
TR(-OS) = ((Vpeak – Vfinal) / Vfinal ) x 100
%
ns
V/µs
+SR = ∆V / ∆T
TR(tr) = t10% - t90%
V
V
Unit
-VOUT = A4
+VOUT = A3
Equation
Measured parameter
TR(+OS) = ((Vpeak – Vfinal) / Vfinal ) x 100
FIGURE 3. Test circuit for static and dynamic tests – Continued.
C
C
C
C
C
C
C
C
O = Open
S2
S3
Device type 07 and 08
MIL-M-38510/122C
MIL-M-38510/122C
Device type 07 and 08
NOTES:
1. At TA = +125°C, S7 and S8 shall be closed and the factor of 1000 shall be replaced with a factor of 100 in
all equations for IIO, +IIB, and –IIB and the factor of 10 MΩ shall be replaced with a factor of 1 MΩ in
all equations for IIO, +IIB, and –IIB. Also, the units shall be nA.
2. ILOAD = -10 mA at TA = +25°C, -5 mA at TA = -55°C and TA = +125°C.
3. VAC = -1.0 V to +1.0 V for device type 07, VAC = -10.0 V to +10.0 V for device type 08.
4. ∆V = -3.3 V to +3.3 V for device type 07, ∆V = -5.0 V to +5.0 V for device type 08.
5. Any oscillation of 300 mVPP or greater shall be cause for device failure.
6. All resistors are ±1% tolerance and all capacitors are ±10% tolerance, unless otherwise indicated.
7. ILOAD = +10 mA at TA = +25°C, +5 mA at TA = -55°C and TA = +125°C.
FIGURE 3. Test circuit for static and dynamic tests – Continued.
33
MIL-M-38510/122C
Device type 02
NOTE: C1 is test fixture capacitance and shall be 1.5 pF ±1.0 pF.
FIGURE 4. Settling time circuits .
34
MIL-M-38510/122C
Device type 03
NOTE: C1 is test fixture capacitance and shall be less than 1.0 pF.
FIGURE 4. Settling time circuits – Continued.
35
MIL-M-38510/122C
Device types 04 and 05
NOTE: C1 is test fixture capacitance and shall be less than 1.0 pF.
FIGURE 4. Settling time circuits – Continued.
36
MIL-M-38510/122C
Device types 06 and 07
NOTE: C1 is test fixture capacitance and shall be 2.5 pF ±1.0 pF.
FIGURE 4. Settling time circuits – Continued.
37
MIL-M-38510/122C
Device type 08
Schottky diodes D1 – D2 are Hewlett-Packard HP5082-2835 or equivalent.
FIGURE 4. Settling time circuits – Continued.
38
“
“
“
4003
“
“
-IIB
“
“
+PSRR
-PSRR
CMRR
39
TA =
+125°C
2
4003
“
+PSRR
-PSRR
-IIB
“
“
32
31
25
26
27
28
29
30
“
“
“
“
“
“
+IIB
“
“
IIO
“
“
19
20
21
22
23
24
4001
“
“
“
“
“
18
VIO
“
“
ICC
-VCC = -10.0 V, -20.0 V
+VCC = 10.0 V, 20.0 V
VCM = 0 V
VCM = -10 V 1/
VCM = 10 V 1/
VCM = 0 V
VCM = -10 V 1/
VCM = 10 V 1/
VCM = 0 V
VCM = -10 V 1/
VCM = 10 V 1/
VCM = 0 V
VCM = -10 V 1/
VCM = 10 V 1/
2/ 3/
2/ 3/
16
17
+VCC = 5.0 V, 25.0 V;
-VCC = -25 V, -5 V;
VCM = 10 V. –10 V
-VCC = -10.0 V, -20.0 V
-VIO(ADJ)
15
VCM = 0 V
VCM = -10 V 1/
VCM = 10 V 1/
+VCC = 10.0 V, 20.0 V
VCM = 0 V
VCM = -10 V 1/
VCM = 10 V 1/
VCM = 0 V
VCM = -10 V 1/
VCM = 10 V 1/
VCM = 0 V
VCM = -10 V 1/
VCM = 10 V 1/
unless otherwise specified
Conditions
±VCC = ±15 V, see figure 3,
+VIO(ADJ)
4005
10
11
12
13
“
“
“
“
+IIB
“
“
14
4
5
6
7
8
9
“
IIO
“
“
TA =
+25°C
1
2
3
4001
“
“
VIO
“
“
Test no.
1
MIL-STD883
method
Symbol
Subgroup
86
86
-50.0
-50.0
-50.0
-50.0
-50.0
-50.0
-5.0
-5.0
-5.0
-30.0
-30.0
-30.0
4.0
86
86
-20.0
-20.0
-20.0
86
-10.0
-10.0
-10.0
-20.0
-20.0
-20.0
-3.0
-3.0
-3.0
-10.0
-10.0
-10.0
80
20.0
20.0
20.0
-30.0
-30.0
-30.0
-30.0
-30.0
-30.0
50.0
50.0
50.0
50.0
50.0
50.0
80
80
-6.0
-6.0
-6.0
-30.0
-30.0
-30.0
5.0
80
5.0
5.0
5.0
30.0
30.0
30.0
0.15
-4.0
-10.0
-10.0
-10.0
-10.0
-10.0
-10.0
10.0
10.0
10.0
20.0
20.0
20.0
80
-4.0
-4.0
-4.0
30.0
30.0
30.0
30.0
30.0
30.0
6.0
6.0
6.0
30.0
30.0
30.0
80
80
-30.0
-30.0
-30.0
-30.0
-30.0
-30.0
-6.0
-6.0
-6.0
-30.0
-30.0
-30.0
30.0
30.0
30.0
30.0
30.0
30.0
6.0
6.0
6.0
30.0
30.0
30.0
3.7
3.7
15.0
15.0
15.0
15.0
15.0
15.0
15.0
15.0
15.0
4.0
4.0
4.0
-5.0
5.0
80
80
-15.0
-15.0
-15.0
80
-15.0
-15.0
-15.0
-15.0
-15.0
-15.0
-4.0
-4.0
-4.0
Device
type 03
limits
Min Max
-5.0
10.0
10.0
10.0
10.0
10.0
10.0
10.0
10.0
10.0
4.0
4.0
4.0
Device
type 02
limits
Min Max
3.0
3.0
3.0
Device
type 01
limits
Min Max
TABLE III. Group A inspection.
80
80
1.0
1.0
1.0
1.0
1.0
1.0
-8.0
-8.0
-8.0
-50.0
-50.0
-50.0
6.0
80
80
1.0
1.0
1.0
80
-25.0
-25.0
-25.0
1.0
1.0
1.0
-5.0
-5.0
-5.0
400.0
400.0
400.0
400.0
400.0
400.0
8.0
8.0
8.0
50.0
50.0
50.0
6.0
-6.0
200.0
200.0
200.0
25.0
25.0
25.0
200.0
200.0
200.0
5.0
5.0
5.0
Device
type 04
limits
Min
Max
80
80
1.0
1.0
1.0
1.0
1.0
1.0
-10.0
-10.0
-10.0
-50.0
-50.0
-50.0
9.0
80
80
1.0
1.0
1.0
80
-25.0
-25.0
-25.0
1.0
1.0
1.0
-8.0
-8.0
-8.0
400.0
400.0
400.0
400.0
400.0
400.0
10.0
10.0
10.0
50.0
50.0
50.0
6.0
-9.0
200.0
200.0
200.0
25.0
25.0
25.0
200.0
200.0
200.0
8.0
8.0
8.0
Device types
05 and 06
limits
Min
Max
84
84
-20.0
-20.0
-1.0
-20.0
-20.0
-1.0
-2.0
-2.0
-2.0
-1.0
-1.0
-1.0
80
(08 only)
2.5
84
(07 only)
84
-0.2
-0.2
-1.0
84
-0.4
-0.4
-0.4
-0.2
-0.2
-1.0
-1.0
-1.0
-1.0
+20.0
+20.0
+1.0
+20.0
+20.0
+1.0
7.5
(07 only)
6.0
(08 only)
2.0
2.0
2.0
+1.0
+1.0
+1.0
-2.5
+0.2
+0.2
+1.0
+0.4
+0.4
+0.4
+0.2
+0.2
+1.0
+1.0
+1.0
+1.0
Device types
07 and 08
limits
Min
Max
dB
dB
nA
nA
nA
nA
nA
nA
mV
mV
mV
nA
nA
nA
mA
mV
mV
dB
dB
nA
nA
nA
dB
nA
nA
nA
nA
nA
nA
mV
mV
mV
Unit
MIL-M-38510/122C
40
TA =
+25°C
4
TA =
-55°C
3
-VIO(ADJ)
VOUT at 10 mA
60
-AVS
+VOUT
-VOUT
RL = 2 kΩ, VOUT = 0 V, -10 V
VOUT at –10 mA
57
58
59
“
“
+AVS
RL = 2 kΩ
“
RL = 2 kΩ, VOUT = 0 V, 10 V
RL = 2 kΩ
55
56
4004
54
-VOP
4005
+VOP
ICC
2/ 3/
2/ 3/
+VCC = 5.0 V, 25.0 V;
-VCC = -25 V, -5 V;
VCM = 10 V. –10 V
52
51
-VCC = -10.0 V, -20.0 V
+VCC = 10.0 V, 20.0 V
53
“
CMRR
49
50
-VIO(ADJ)
“
-PSRR
VCM = 0 V
VCM = -10 V 1/
VCM = 10 V 1/
VCM = 0 V
VCM = -10 V 1/
VCM = 10 V 1/
VCM = 0 V
VCM = -10 V 1/
VCM = 10 V 1/
VCM = 0 V
VCM = -10 V 1/
VCM = 10 V 1/
+VCC = 5.0 V, 25.0 V;
-VCC = -25 V, -5 V;
VCM = 10 V. –10 V
+VIO(ADJ)
4003
+PSRR
46
47
48
43
44
45
“
“
“
+IIB 4/
“
“
“
“
“
40
41
42
“
“
“
IIO
“
“
-IIB 4/
“
“
37
38
39
36
4001
“
“
4005
VIO
“
“
ICC
2/ 3/
2/ 3/
34
35
+VIO(ADJ)
33
TA =
+125°C
4003
unless otherwise specified
CMRR
Conditions
±VCC = ±15 V, see figure 3,
2
Test no.
Symbol
Subgroup
MIL-STD883
method
200.0
10.0
200.0
12.0
6.0
86
86
86
-50.0
-50.0
-50.0
-50.0
-50.0
-50.0
-30.0
-30.0
-30.0
-5.0
-5.0
-5.0
6.0
86
-10.0
-12.0
0.20
-60
50.0
50.0
50.0
100.0
10.0
-10.0
100.0
10.0
100.0
10.0
-10.0
-10.0
-10.0
4.0
4.0
30.0
30.0
30.0
30.0
30.0
30.0
30.0
30.0
30.0
-7.0
7.0
80
80
80
-30.0
-30.0
-30.0
-30.0
-30.0
-30.0
-30.0
-30.0
-30.0
6.0
6.0
6.0
-7.0
30.0
30.0
30.0
30.0
30.0
30.0
30.0
30.0
30.0
-6.0
-6.0
-6.0
4.0
4.0
6.0
6.0
6.0
-7.0
-7.0
7.0
80
Device
type 03
limits
Min Max
100.0
10.0
7.0
80
80
80
-30.0
-30.0
-30.0
-30.0
-30.0
-30.0
-30.0
-30.0
-30.0
30.0
30.0
30.0
50.0
50.0
50.0
-6.0
-6.0
-6.0
7.0
80
Device
type 02
limits
Min Max
5.0
5.0
5.0
0.20
-6.0
Device
type 01
limits
Min Max
TABLE III. Group A inspection – Continued.
20.0
10.0
20.0
10.0
9.0
80
80
80
1.0
1.0
1.0
1.0
1.0
1.0
-50.0
-50.0
-50.0
-8.0
-8.0
-8.0
9.0
80
-10.0
-10.0
6.5
-9.0
400.0
400.0
400.0
400.0
400.0
400.0
50.0
50.0
50.0
8.0
8.0
8.0
6.5
-9.0
Device
type 04
limits
Min
Max
10.0
10.0
10.0
10.0
11.0
80
80
80
1.0
1.0
1.0
1.0
1.0
1.0
-50.0
-50.0
-50.0
-10.0
-10.0
-10.0
11.0
80
-10.0
-10.0
6.5
-11.0
400.0
400.0
400.0
400.0
400.0
400.0
50.0
50.0
50.0
10.0
10.0
10.0
6.5
-11.0
Device types
05 and 06
limits
Min
Max
100.0
10.0
100.0
11.5
80
(08 only)
3.0
84
(07 only)
84
84
-20.0
-20.0
-1.0
-20.0
-20.0
-1.0
-1.0
-1.0
-1.0
-2.0
-2.0
-2.0
80
(08 only)
3.0
84
(07 only)
-10.0
-11.5
7.5
(07 only)
6.0
(08 only)
-3.0
20.0
20.0
+1.0
20.0
20.0
+1.0
+1.0
+1.0
+1.0
7.5
(07 only)
6.0
(08 only)
2.0
2.0
2.0
-3.0
Device types
07 and 08
limits
Min
Max
V
V/mV
V
V/mV
V
V
mA
mV
mV
dB
dB
dB
nA
nA
nA
nA
nA
nA
nA
nA
nA
mV
mV
mV
mA
mV
mV
dB
Unit
MIL-M-38510/122C
VOUT at –10 mA, -5 mA 5/
VOUT at 10 mA , 5 mA 5/
RL = 2 kΩ
64
65
66
67
68
69
“
“
4004
“
“
“
+AVS
-AVS
+VOUT
-VOUT
+VOP
41
TA =
+125°C
8
TA =
+25°C
7
TA =
-55°C
6
RL = 2 kΩ
“
“
TR(+os)
+SR
“
“
“
TR(+os)
TR(-os)
“
TR(tf)
TR(tr)
-SR
“
4002
“
“
82
81
80
79
78
76
77
6/ 9/
6/ 9/
6/ 8/
6/ 8/
6/ 7/
6/
6/ 7/
VOUT at 10 mA , 5 mA 5/
6/
6/
6/
72
-VOUT
TR(tr)
TR(tf)
TR(-os)
73
74
75
RL = 2 kΩ, VOUT = 0 V, -10 V
VOUT at –10 mA, -5 mA 5/
71
-AVS
70
RL = 2 kΩ, VOUT = 0 V, 10 V
RL = 2 kΩ
RL = 2 kΩ, VOUT = 0 V, 10 V
RL = 2 kΩ
+VOUT
+AVS
-VOP
RL = 2 kΩ, VOUT = 0 V, -10 V
63
“
-VOP
TA =
+125°C
61
62
4004
+VOP
unless otherwise specified
5
Conditions
±VCC = ±15 V, see figure 3,
Symbol
Subgroup
MIL-STD883
Test no.
method
10.0
10.0
10.0
100.0
100.0
11.0
10.0
100.0
100.0
11.0
-10.0
-11.0
-10.0
-11.0
Device
type 01
limits
Min Max
4.0
4.0
50.0
50.0
70.0
70.0
25.0
70.0
70.0
60.0
60.0
70.0
40.0
25.0
45.0
45.0
70.0
-10.0
-10.0
-10.0
-10.0
60.0
60.0
40.0
-10.0
10.0
70.0
10.0
70.0
10.0
70.0
-10.0
70.0
10.0
-10.0
10.0
70.0
10.0
70.0
10.0
70.0
-10.0
Device
type 03
limits
Min Max
70.0
10.0
Device
type 02
limits
Min Max
TABLE III. Group A inspection – Continued.
25.0
25.0
10.0
15.0
15.0
10.0
10.0
15.0
15.0
10.0
50.0
50.0
60.0
60.0
40.0
50.0
50.0
40.0
-10.0
-10.0
-10.0
-10.0
Device
type 04
limits
Min
Max
50.0
(05 only)
100.0
(06 only)
50.0
(05 only)
100.0
(06 only)
10.0
7.5
7.5
10.0
10.0
7.5
7.5
10.0
60.0
(05 only)
55.0
(06 only)
60.0
(05 only)
55.0
(06 only)
50.0
(05 only)
45.0
(06 only)
50.0
(05 only)
45.0
(06 only)
40.0
50.0
50.0
40.0
-10.0
-10.0
-10.0
-10.0
Device types
05 and 06
limits
Min
Max
100.0
(07 only)
45.0
(08 only)
100.0
(07 only)
45.0
(08 only)
10.0
70.0
70.0
11.0
10.0
70.0
70.0
11.0
55.0
(07 only)
60.0
(08 only)
55.0
(07 only)
60.0
(08 only)
45.0
(07 only)
50.0
(08 only)
45.0
(07 only)
50.0
(08 only)
40.0
50.0
50.0
40.0
-10.0
-11.0
-10.0
-11.0
Device types
07 and 08
limits
Min
Max
%
%
ns
ns
V/µs
%
V/µs
ns
ns
%
V
V
V/mV
V/mV
V
V
V
V
V/mV
V/mV
V
V
Unit
MIL-M-38510/122C
42
∆IIO/∆T = VIO ( test 22 ) IIO ( test 4 ) x 10
16/
∆VIO/∆T = VIO ( test 37 ) VIO ( test 1 ) x 12.5
16/
∆IIO/∆T = VIO ( test 40 ) IIO ( test 4 ) x 12.5
16/
94
95
96
∆IIO/∆T
∆VIO/∆T
13
TA =-55°C
∆IIO/∆T
∆VIO/∆T = VIO ( test 19 ) VIO ( test 1 ) x 10
16/
93
∆VIO/∆T
TA = +125°C
See figure 4 14/
See figure 4 14/
91
6/ 13/
92
90
6/ 13/
-tS
“
-SR
89
12/
12/
6/ 11/
6/ 11/
6/ 10/
6/ 10/
unless otherwise specified
Conditions
±VCC = ±15 V, see figure 3,
+tS
“
+SR
88
87
86
85
84
83
Test
no.
12
“
“
TR(+os)
TR(-os)
“
“
TR(tf)
TR(tr)
“
4002
MIL-STD883
method
TA =-55°C
13
TA =
-55°C
8
-SR
+SR
8
TA =
+125°C
Symbol
Subgroup
-200.0
-15.0
-100.0
-15.0
8.0
8.0
8.0
8.0
200.0
15.0
100.0
15.0
Device
type 01
limits
Min
Max
-100.0 100.0 -100.0
15.0
100.0
15.0
-15.0
-15.0
15.0
100.0
-15.0
3.0
15.0
3.0
4.0
20.0
20.0
70.0
70.0
60.0
60.0
4.0
50.0
50.0
70.0
70.0
20.0
20.0
Device
type 03
limits
Min
Max
-100.0 100.0 -100.0
-15.0
3.0
3.0
3.0
3.0
Device
type 02
limits
Min
Max
TABLE III. Group A inspection – Continued.
-400.0
-30.0
-400.0
-30.0
20.0
20.0
20.0
20.0
400.0
30.0
400.0
30.0
1.2
1.2
50.0
50.0
60.0
60.0
Device
type 04
limits
Min
Max
-400.0
-30.0
-400.0
-30.0
45.0
(05 only)
84.0
(06 only)
45.0
(05 only)
84.0
(06 only)
45.0
(05 only)
84.0
(06 only)
45.0
(05 only)
84.0
(06 only)
400.0
30.0
400.0
30.0
15/
15/
45.0
45.0
55.0
55.0
Device types
05 and 06
limits
Min
Max
-20
-10
-20
-10
84.0
(07 only)
40.0
(08 only)
84.0
(07 only)
40.0
(08 only)
80.0
(07 only)
40.0
(08 only)
80.0
(07 only)
40.0
(08 only)
+20
10
20
10
15/
15/
55.0
(07 only)
60.0
(08 only)
55.0
(07 only)
60.0
(08 only)
45.0
(07 only)
50.0
(08 only)
45.0
(07 only)
50.0
(08 only)
Device types
07 and 08
limits
Min
Max
pA/°C
µV/°C
pA/°C
µV/°C
µs
µs
V/µs
V/µs
V/µs
V/µs
V/µs
V/µs
V/µs
V/µs
Unit
MIL-M-38510/122C
MIL-M-38510/122C
TABLE III. Group A inspection – Continued.
1/
VCM is achieved by algebraically subtracting the common mode voltage ( VCM ) from each supply and
algebraically adding the common mode voltage to V (For example: for VCM = -10 V, then +VCC = +25 V,
–VCC = -5 V, V = 10 V).
2/
Using the ac test circuit, the +VIO(ADJ) will force the output voltage to a voltage greater than +1 mV.
The –VIO(ADJ) will force the output voltage to voltage less than – 1 mV.
3/
The VIO(ADJ) test will be performed as follows: The tester will measure VIO and make a determination as to whether
VIO is positive or negative. If VIO is positive, the tester will check for VIO(ADJ) to 1 mV more negative than zero volts.
If VIO is negative, the tester will check for VIO(ADJ) to 1 mV more positive than zero volts. The limits specified in this
table indicate the minimum adjustability required for a device having VIO equal to the maximum limit.
4/
±IIB (test numbers 43 through 48), device type 07 is not tested.
5/
Device types 01, 04, 05, 06, 07, and 08: IOUT = ±5 mA. Device types 02 and 03: IOUT = ±10 mA.
6/
Device types 01 and 03: AV = 5; device types 02, 04, and 05: AV = 1; device types 06 and 07: AV = 3.
7/
At +25°C, tests 77 and 78, +SR and –SR, device type 05: 50 V/µs minimum.
8/
At +125°C, test 79 and 80, TR(tr) and TR(tf), device type 05: 60 ns maximum.
9/
At +125°C, tests 81 and 82, TR(+OS) and TR(-OS), device type 05: +50.0% maximum.
10/ At +125C, tests 83 and 84, +SR and –SR, device type 05: +45V/µs minimum.
11/ At –55°C, tests 85 and 86, TR(tr) and TR(tf), device type 05: +60.0 ns maximum.
12/ At –55°C, tests 87 and 88, TR(+OS) and TR(-OS), device type 05: +50% maximum.
13/ At –55°C, tests 89 and 90, +SR and –SR, device type 05: +45.0 V/µs minimum.
14/ For device types 02, 03, 04, 05 and 06, which have a bandwidth control pin, no additional external compensation
capacitance shall be used.
15/ At +25°C, tests 91 and 92, +tS and –tS, device type 05: 1.0 µs maximum, device types 06, 07, and 08: 1.1 µs maximum.
16/ Tests 93 through 96, which require a read and record measurement plus a calculation, may be omitted except when
subgroup 13 is being accomplished for group A sampling inspection and group B (class S) inspection.
5. PACKAGING
5.1 Packaging requirements. For acquisition purposes, the packaging requirements shall be as specified in the contract or
order (see 6.2). When actual packaging of materiel is to be performed by DoD personnel, these personnel need to contact the
responsible packaging activity to ascertain requisite packaging requirements. Packaging requirements are maintained by the
Inventory Control Point's packaging activity within the Military Department of Defense Agency, or within the Military Department's
System Command. Packaging data retrieval is available from the managing Military Department's or Defense Agency's
automated packaging files, CD-ROM products, or by contacting the responsible packaging activity.
43
MIL-M-38510/122C
TABLE IV. Group C end point electrical parameters. 1/ 2/ 3/
( TA = 25°C, ±VCC = ±15 V VCM = 0 V )
Device
type
01
02
03
04
05, 06
07, 08
1/
2/
3/
VIO (test no. 1, table III) (mV)
Limit
+IIB (test no. 7, table III) (nA)
Delta
Limit
-IIB (test no. 10, table III) (nA)
Delta
Limit
Delta
Min
Max
Min
Max
Min
Max
Min
Max
Min
Max
Min
Max
-3.0
+3.0
-0.5
+0.5
-20.0
+20.0
-10.0
+10.0
-20.0
+20.0
-10.0
+10.0
-4.0
+4.0
-0.5
+0.5
-10.0
+10.0
-8.0
+8.0
-10.0
+10.0
-8.0
+8.0
-4.0
+4.0
-0.5
+0.5
-15.0
+15.0
-10.0
+10.0
-15.0
+15.0
-10.0
+10.0
-5.0
+5.0
-1.5
+1.5
+1.0
+200.0
-20.0
+20.0
+1.0
+200.0
-20.0
+20.0
-8.0
+8.0
-1.5
+1.5
+1.0
+200.0
-20.0
+20.0
+1.0
+200.0
-20.0
+20.0
-1.5
+1.5
-0.5
+0.5
-1.0
+1.0
-0.5
+0.5
-1.0
+1.0
-0.5
+0.5
Delta limits apply to the measured value (see delta limit definition in MIL-PRF-38535). For device types 07 and 08,
delta limits apply to the measured value of test 1, 7, and 10.
Each of the parameters shall be recorded before and after the required burn-in or life tests to determine deltas (∆).
For device types 07 and 08, limits apply for tests 1, 2, 3, 7, 8, 9, 10, 11, and 12.
6. NOTES
6.1 Intended use. Microcircuits conforming to this specification are intended for original equipment design applications and
logistic support of existing equipment.
6.2 Acquisition requirements. Acquisition documents should specify the following:
a.
Title, number, and date of the specification.
b.
PIN and compliance identifier, if applicable (see 1.2).
c.
Requirements for delivery of one copy of the conformance inspection data pertinent to the device
inspection lot to be supplied with each shipment by the device manufacturer, if applicable.
d.
Requirements for certificate of compliance, if applicable.
e.
Requirements for notification of change of product or process to acquiring activity in addition to
notification of the qualifying activity, if applicable.
f.
Requirements for failure analysis (including required test condition of MIL-STD-883, method 5003),
corrective action and reporting of results, if applicable.
g.
Requirements for product assurance options.
h.
Requirements for special carriers, lead lengths, or lead forming, if applicable. These requirements should not
affect the part number. Unless otherwise specified, these requirements will not apply to direct purchase by
or direct shipment to the Government.
i.
Requirements for "JAN" marking.
j.
Packaging requirements (see 5.1).
44
MIL-M-38510/122C
6.3 Superseding information. The requirements of MIL-M-38510 have been superseded to take advantage of the
available Qualified Manufacturer Listing (QML) system provided by MIL-PRF-38535. Previous references to MIL-M-38510 in
this document have been replaced by appropriate references to MIL-PRF-38535. All technical requirements now consist of this
specification and MIL-PRF-38535. The MIL-M-38510 specification sheet number and PIN have been retained to avoid
adversely impacting existing government logistics systems and contractor's parts lists.
6.4 Qualification. With respect to products requiring qualification, awards will be made only for products which are, at the
time of award of contract, qualified for inclusion in Qualified Manufacturers List QML-38535 whether or not such products have
actually been so listed by that date. The attention of the contractors is called to these requirements, and manufacturers are
urged to arrange to have the products that they propose to offer to the Federal Government tested for qualification in order that
they may be eligible to be awarded contracts or purchase orders for the products covered by this specification. Information
pertaining to qualification of products may be obtained from DSCC-VQ, 3990 E. Broad Street, Columbus, Ohio 43123-1199.
6.5 Abbreviations, symbols, and definitions. The abbreviations, symbols, and definitions used herein are defined in
MIL-PRF-38535 and MIL-STD-1331.
6.6 Logistic support. Lead materials and finishes (see 3.3) are interchangeable. Unless otherwise specified, microcircuits
acquired for Government logistic support will be acquired to device class B (see 1.2.2), lead material and finish A (see 3.4).
Longer length leads and lead forming should not affect the part number.
6.7 Substitutability. The cross-reference information below is presented for the convenience of users. Microcircuits covered
by this specification will functionally replace the listed generic-industry type. Generic-industry microcircuit types may not have
equivalent operational performance characteristics across military temperature ranges or reliability factors equivalent to MIL-M38510 device types and may have slight physical variations in relation to case size. The presence of this information should not
be deemed as permitting substitution of generic-industry types for MIL-M-38510 types or as a waiver of any of the provisions of
MIL-PRF-38535.
Military device type
01
02
03
04
05
06
07
08
Generic-industry type
2700
2600
2620
2500
2510
2520
OP44
OP42
6.8 Changes from previous issue. Asterisks are not used in this revision to identify changes with respect to the previous
issue, due to the extensiveness of the changes.
Custodians:
Army – CR
Navy - EC
Air Force - 11
NASA - NA
DLA – CC
Preparing activity:
DLA - CC
Project 5962-2051
Review activities:
Army - MI, SM
Navy - AS, CG, MC, SH, TD
Air Force – 03, 19, 99
NOTE: The activities listed above were interested in this document as of the date of this document. Since organizations and
responsibilities can change, you should verify the currency of the information above using the ASSIST Online database at
www.dodssp.daps.mil.
45