DG444B, DG445B Vishay Siliconix Improved Quad SPST CMOS Analog Switches DESCRIPTION FEATURES The DG444B, DG445B are monolithic quad analog switches designed to provide high speed, low error switching of analog and audio signals. The DG444B, DG445B are upgrades to the original DG444, DG445. Combing low on-resistance (45 , typ.) with high speed (tON 120 ns, typ.), the DG444B, DG445B are ideally suited for Data Acquisition, Communication Systems, Automatic Test Equipment, or Medical Instrumentation. Charge injection has been minimized on the drain for use in sample-and-hold circuits. The DG444B, DG445B are built using Vishay Siliconix’s high-voltage silicon-gate process. An epitaxial layer prevents latchup. When on, each switch conducts equally well in both directions and blocks input voltages to the supply levels when off. • • • • • • Low On-Resistance: 45 W Low Power Consumption: 1 mW Fast Switching Action - tON: 120 ns Low Charge Injection TTL/CMOS-Compatible Logic Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 BENEFITS • • • • • Low Signal Errors and Distortion Reduced Power Supply Consumption Faster Throughput Reduced Pedestal Errors Simple Interfacing APPLICATIONS • • • • • • Audio Switching Data Acquisition Sample-and-Hold Circuits Communication Systems Automatic Test Equipment Medical Instruments FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION DG444B Dual-In-Line and SOIC IN1 1 16 IN2 D1 2 15 D2 Logic DG444B DG445B S1 3 14 S2 0 ON OFF V- 4 13 V+ 1 OFF ON GND 5 12 VL S4 6 11 S3 D4 7 10 D3 IN4 8 9 IN3 TRUTH TABLE Logic "0" 0.8 V Logic "1" 2.4 V Top View DG444B QFN16 (4 x 4 mm) ORDERING INFORMATION D1 IN1 IN2 D2 16 15 14 Temp Range 13 S1 1 12 S2 V- 2 11 V+ GND 3 10 VL S4 4 9 S3 5 6 7 Document Number: 72626 S13-1287-Rev. C, 27-May-13 16-pin Plastic DIP - 40 °C to 85 °C 16-pin Narrow SOIC 8 D4 IN4 IN3 D3 Top View Package 16 pin QFN 4 x 4 mm (Variation 1) For technical questions, contact: [email protected] Part Number DG444BDJ DG444BDJ-E3 DG445BDJ DG445BDJ-E3 DG444BDY-E3 DG444BDY-T1-E3 DG445BDY-E3 DG445BDY-T1-E3 DG444BDN-T1-E4 DG445BDN-T1-E4 www.vishay.com 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 DG444B, DG445B Vishay Siliconix ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Limit V+ to V- Unit 44 GND to V- 25 VL (GND - 0.3 V) to (V+) + 0.3 V Digital Inputsa, VS, VD (V-) - 2 to (V+) + 2 or 30 mA, whichever occurs first Continuous Current (Any Terminal) 30 Current, S or D (Pulsed at 1 ms, 10 % duty cycle) 100 Storage Temperature Power Dissipation (Package)b - 65 to 125 16-pin Plastic DIPc 470 16-pin Narrow Body SOICd 640 QFN-16 850 V mA °C mW Notes: a. Signals on SX, DX, or INX exceeding V+ or V- will be clamped by internal diodes. Limit forward diode current to maximum current ratings. b. All leads welded or soldered to PC Board. c. Derate 6 mW/°C above 75 °C. d. Derate 8 mW/°C above 75 °C. www.vishay.com 2 For technical questions, contact: [email protected] Document Number: 72626 S13-1287-Rev. C, 27-May-13 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 DG444B, DG445B Vishay Siliconix SPECIFICATIONS (for dual supplies) Limits - 40 °C to 85 °C Test Conditions Unless Otherwise Specified V+ = 15 V, V- = - 15 V Parameter Analog Switch Symbol Analog Signal Ranged Drain-Source On-Resistance VANALOG RDS(on) VL = 5 V, VIN = 2.4 V, 0.8 Ve IS = 1 mA, VD = ± 10 V IS(off) VD = ± 14 V, VS = ± 14 V Switch Off Leakage Current ID(off) ID(on) Channel On Leakage Current VS = VD = ± 14 V Temp.a Min.b Full - 15 Room Full Room Full Room Full Room Full - 0.5 -5 - 0.5 -5 - 0.5 - 10 Typ.c Max.b Unit 15 V 45 80 95 0.5 5 0.5 5 0.5 10 ± 0.01 ± 0.01 ± 0.02 nA Digital Control Input Voltage Low VINL Full Input Voltage High VINH Full 2.4 Input Current VIN Low IINL Full -1 - 0.01 1 Input Current VIN High IINH Full -1 0.01 1 VIN under test = 0.8 V All Other = 2.4 V VIN under test = 2.4 V All Other = 0.8 V 0.8 V µA Dynamic Characteristics Turn-On Time tON Turn-Off Time tOFF Charge Injectione Q OIRR Off Isolatione Crosstalk (Channel-to-Channel) Source Off Capacitance d XTALK CS(off) Drain Off Capacitance CD(off) Channel On Capacitance CD(on) RL = 1 k, CL = 35 pF VS = ± 10 V, See Figure 2 CL = 1 nF, VS = 0 V Vgen = 0 V, Rgen = 0 RL = 50 , CL = 15 pF VS = 1 VRMS, f = 100 kHz Room 300 Room 200 Room 1 Room - 90 Room - 95 Room 5 Room 5 VS = VD = 0 V, f = 1 MHz Room 16 VIN = 0 V or 5 V Room Full Room Full Room Full VS = 0 V, f = 100 kHz ns pC dB pF Power Supplies Positive Supply Current I+ Negative Supply Current I- Logic Supply Current IIN Document Number: 72626 S13-1287-Rev. C, 27-May-13 For technical questions, contact: [email protected] 1 5 -1 -5 µA 1 5 www.vishay.com 3 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 DG444B, DG445B Vishay Siliconix SPECIFICATIONS (for unipolar supplies) Test Conditions Unless Otherwise Specified V+ = 12 V, V- = 0 V D Suffix - 40 °C to 85 °C VL = 5 V, VIN = 2.4 V, 0.8 Ve Temp.a Min.b VANALOG Full 0 RDS(on) IS = 1 mA, VD = 3 V, 8 V Turn-On Time tON Turn-Off Time tOFF Q Parameter Analog Switch Symbol Analog Signal Ranged Drain-Source On-Resistanced Dynamic Characteristics Charge Injection Typ.c Max.b Unit 12 V Room Full 90 160 200 RL = 1 k, CL = 35 pF, VS = 8 V See Figure 2 Room 120 300 Room 60 200 CL = 1 nF, Vgen = 6 V, Rgen = 0 Room 4 ns pC Power Supplies Positive Supply Current I+ Negative Supply Current I- Logic Supply Current IIN Room Full Room Full Room Full VIN = 0 or 5 V VL = 5.25 V, VIN = 0 or 5 V 1 5 -1 -5 µA 1 5 Notes: a. Room = 25 °C, Full = as determined by the operating temperature suffix. b. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet. c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. d. Guaranteed by design, not subject to production test. e. VIN = input voltage to perform proper function. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 100 RDS(on) - Drain-Source On-Resistance (Ω) RDS(on) – Drain-Source On-Resistance (Ω) 110 100 90 ±5V 80 70 ± 10 V 60 50 ± 15 V 40 ± 20 V 30 20 10 - 20 - 16 - 12 80 70 60 125 °C 50 85 °C 40 25 °C 30 - 55 °C 20 10 0 -8 -4 0 4 8 VD – Drain Voltage (V) 12 16 20 RDS(on) vs. VD and Power Supply Voltages www.vishay.com 4 V+ = 15 V V- = - 15 V 90 - 15 - 10 -5 0 5 10 15 VD – Drain Voltage (V) RDS(on) vs. VD and Temperature For technical questions, contact: [email protected] Document Number: 72626 S13-1287-Rev. C, 27-May-13 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 DG444B, DG445B Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 40 V+ = 5 V 225 V+ = 22 V V- = - 22 V TA = 25 °C 30 200 20 175 150 IS, ID - Current (pA) RDS(on) – Drain-Source On-Resistance (Ω) 250 7V 125 10 V 100 12 V 15 V 75 ID(on) 10 IS(off), ID(off) 0 - 10 - 20 50 - 30 25 - 40 - 20 0 0 2 4 6 8 10 12 VD – Drain Voltage (V) 14 16 RDS(on) vs. VD and Single Power Supply Voltages - 10 - 5 0 5 10 VANALOG – Analog Voltage (V) 15 20 Leakage Currents vs. Analog Voltage 1 nA 30 V+ = 15 V V- = - 15 V VS, V D = - 14 V 20 100 pA Q – Charge (pC) IS, ID - Current - 15 IS(off), ID(off) 10 pA 10 V+ = 15 V V- = - 15 V 0 V+ = 12 V V- = 0 V - 10 - 20 1 pA - 55 - 35 - 15 5 25 45 65 Temperature (°C) 85 - 30 - 15 105 125 Leakage Current vs. Temperature - 10 -5 0 5 VANALOG – Analog Voltage (V) 10 15 QS, QD - Charge Injection vs. Analog Voltage 120 V+ = + 15 V V- = - 15 V 110 100 OIRR (dB) 90 RL = 50 Ω 80 70 60 50 40 10 k 100 k 1M 10 M f – Frequency (Hz) Off Isolation vs. Frequency Document Number: 72626 S13-1287-Rev. C, 27-May-13 For technical questions, contact: [email protected] www.vishay.com 5 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 DG444B, DG445B Vishay Siliconix SCHEMATIC DIAGRAM (typical channel) V+ S VL VLevel Shift/ Drive VIN V+ GND D V- Figure 1. TEST CIRCUITS +5V + 15 V Logic Input VL 50 % V+ S ± 10 V 3V 0V D IN VO RL 1 kΩ 3V tOFF Switch Input CL 35 pF VS VO V- GND tr < 20 ns tf < 20 ns 50 % Switch Output - 15 V 80 % 0V tON Note: CL (includes fixture and stray capacitance) 80 % Logic input waveform is inverted for DG445. Figure 2. Switching Time +5V Rg VL + 15 V VO V+ S D IN Vg ΔVO CL 1 nF 3V GND VO INX OFF ON OFF (DG444B) V- INX - 15 V OFF ON Q = ΔVO x CL OFF (DG445B) Figure 3. Charge Injection www.vishay.com 6 For technical questions, contact: [email protected] Document Number: 72626 S13-1287-Rev. C, 27-May-13 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 DG444B, DG445B Vishay Siliconix TEST CIRCUITS C = 1 mF tantalum in parallel with 0.01 mF ceramic +5V + 15 V C +5V + 15 V C VL V+ S1 VS D1 S VS 50 Ω IN1 VO D Rg = 50 Ω 0 V, 2.4 V VO D2 S2 GND RL IN2 GND V- C = RF bypass V- C C - 15 V - 15 V XTA LK Isolation = 20 log RL IN 0 V, 2.4 V NC 0 V, 2.4 V V+ VL Rg = 50 Ω Off Isolation = 20 log VS VO VS VO Figure 5. Off Isolation Figure 4. Crosstalk +5V + 15 V VL V+ C S Meter IN HP4192A Impedance Analyzer or Equivalent 0 V, 2.4 V D GND V- f = 1 MHz C - 15 V Figure 6. Source/Drain Capacitances APPLICATIONS + 15 V +5V + 15 V VL V+ 1/ + 15 V 4 DG444B VOUT +5V 0V 10 kΩ 0V VIN GND V- Figure 7. Level Shifter Document Number: 72626 S13-1287-Rev. C, 27-May-13 For technical questions, contact: [email protected] www.vishay.com 7 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 DG444B, DG445B Vishay Siliconix APPLICATIONS VIN + - VOUT +5V + 15 V Gain error is determined only by the resistor tolerance. Op amp offset and CMRR will limit accuracy of circuit. V+ VL GAIN 1 AV = 1 R1 90 kΩ GAIN 2 AV = 10 R2 5 kΩ With SW4 Closed: VOUT = R1 + R2 + R3 + R4 VIN GAIN 3 AV = 20 R3 4 kΩ GAIN 4 AV = 100 R4 1 kΩ = 100 R4 DG444B or DG445B V- GND - 15 V Figure 8. Precision-Weighted Resistor Programmable-Gain Amplifier +5V + 15 V V1 Logic Input Low = Sample High = Hold DG444B + 15 V 15 V + 15 V VIN + J202 C1 50 pF 5 MΩ 5.1 MΩ R1 200 kΩ 2N4400 VOUT V2 30 pF GND C2 1000 pF J500 J507 - 15 V Figure 9. Precision Sample-and-Hold Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?72626. www.vishay.com 8 For technical questions, contact: [email protected] Document Number: 72626 S13-1287-Rev. C, 27-May-13 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information Vishay Siliconix SOIC (NARROW): 16ĆLEAD JEDEC Part Number: MS-012 MILLIMETERS 16 15 14 13 12 11 10 Dim A A1 B C D E e H L Ĭ 9 E 1 2 3 4 5 6 7 8 INCHES Min Max Min Max 1.35 1.75 0.053 0.069 0.10 0.20 0.004 0.008 0.38 0.51 0.015 0.020 0.18 0.23 0.007 0.009 9.80 10.00 0.385 0.393 3.80 4.00 0.149 0.157 1.27 BSC 0.050 BSC 5.80 6.20 0.228 0.244 0.50 0.93 0.020 0.037 0_ 8_ 0_ 8_ ECN: S-03946—Rev. F, 09-Jul-01 DWG: 5300 H D C All Leads e Document Number: 71194 02-Jul-01 B A1 L Ĭ 0.101 mm 0.004 IN www.vishay.com 1 Package Information Vishay Siliconix PDIP: 16ĆLEAD 16 15 14 13 12 11 10 9 E E1 1 2 3 4 5 6 7 8 D S Q1 A A1 L 15° MAX C B1 e1 Dim A A1 B B1 C D E E1 e1 eA L Q1 S B eA MILLIMETERS Min Max INCHES Min Max 3.81 5.08 0.150 0.200 0.38 1.27 0.015 0.050 0.38 0.51 0.015 0.020 0.89 1.65 0.035 0.065 0.20 0.30 0.008 0.012 18.93 21.33 0.745 0.840 7.62 8.26 0.300 0.325 5.59 7.11 0.220 0.280 2.29 2.79 0.090 0.110 7.37 7.87 0.290 0.310 2.79 3.81 0.110 0.150 1.27 2.03 0.050 0.080 0.38 1.52 .015 0.060 ECN: S-03946—Rev. D, 09-Jul-01 DWG: 5482 Document Number: 71261 06-Jul-01 www.vishay.com 1 Package Information www.vishay.com Vishay Siliconix QFN 4x4-16L Case Outline (5) (4) VARIATION 1 MILLIMETERS(1) DIM VARIATION 2 MILLIMETERS(1) INCHES INCHES MIN. NOM. MAX. MIN. NOM. MAX. MIN. NOM. MAX. MIN. NOM. MAX. A 0.75 0.85 0.95 0.029 0.033 0.037 0.75 0.85 0.95 0.029 0.033 0.037 A1 0 - 0.05 0 - 0.002 0 - 0.05 0 - 0.002 0.35 0.010 0.014 0.25 0.35 0.010 2.2 0.079 0.087 2.5 2.7 0.098 A3 b 0.20 ref. 0.25 D D2 0.30 0.008 ref. 4.00 BSC 2.0 2.1 0.012 0.20 ref. 0.157 BSC 0.083 0.30 4.00 BSC 2.6 e 0.65 BSC 0.026 BSC 0.65 BSC E 4.00 BSC 0.157 BSC 4.00 BSC E2 2.0 K L 2.1 2.2 0.079 0.20 min. 0.5 0.6 0.083 0.087 2.5 0.008 min. 0.7 0.020 0.024 0.008 ref. 2.6 0.3 0.4 0.014 0.157 BSC 0.102 0.106 0.026 BSC 0.157 BSC 2.7 0.098 0.20 min. 0.028 0.012 0.102 0.106 0.008 min. 0.5 0.012 0.016 N(3) 16 16 16 16 Nd(3) 4 4 4 4 Ne(3) 4 4 4 4 0.020 Notes (1) Use millimeters as the primary measurement. (2) Dimensioning and tolerances conform to ASME Y14.5M. - 1994. (3) N is the number of terminals. Nd and Ne is the number of terminals in each D and E site respectively. (4) Dimensions b applies to plated terminal and is measured between 0.15 mm and 0.30 mm from terminal tip. (5) The pin 1 identifier must be existed on the top surface of the package by using identification mark or other feature of package body. (6) Package warpage max. 0.05 mm. ECN: S13-0893-Rev. B, 22-Apr-13 DWG: 5890 Revision: 22-Apr-13 Document Number: 71921 1 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR SO-16 RECOMMENDED MINIMUM PADS FOR SO-16 0.372 (9.449) 0.152 0.022 0.050 0.028 (0.559) (1.270) (0.711) (3.861) 0.246 (6.248) 0.047 (1.194) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index APPLICATION NOTE Return to Index www.vishay.com 24 Document Number: 72608 Revision: 21-Jan-08 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU. Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000