DG444B/445B Vishay Siliconix New Product Improved Quad SPST CMOS Analog Switches FEATURES D D D D D BENEFITS Low On-Resistance: 45 W Low Power Consumption: 1.0 mW Fast Switching Action—tON: 120 ns Low Charge Injection TTL/CMOS Logic Compatible D D D D D APPLICATIONS Low Signal Errors and Distortion Reduced Power Supply Consumption Faster Throughput Reduced Pedestal Errors Simple Interfacing D D D D D D Audio Switching Data Acquisition Sample-and-Hold Circuits Communication Systems Automatic Test Equipment Medical Instruments DESCRIPTION The DG444B/445B are monolithic quad analog switches designed to provide high speed, low error switching of analog and audio signals. The DG444B/445B are upgrades to the original DG444/445. Combing low on-resistance (45 Ω, typ.) with high speed (tON 120 ns, typ.), the DG444B/445B are ideally suited for Data Acquisition, Communication Systems, Automatic Test Equipment, or Medical Instrumentation. Charge injection has been minimized on the drain for use in sample-and-hold circuits. The DG444B/445B are built using Vishay Siliconix’s high-voltage silicon-gate process. An epitaxial layer prevents latchup. When on, each switch conducts equally well in both directions and blocks input voltages to the supply levels when off. FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION DG444B Dual-In-Line and SOIC IN1 1 16 IN2 D1 2 15 D2 S1 3 14 S2 V− 4 13 V+ GND 5 12 VL S4 6 11 S3 D4 7 10 D3 IN4 8 9 IN3 TRUTH TABLE Logic DG444B DG445B 0 ON OFF OFF ON 1 Logic “0” 0.8 V Logic “1” 2.4 V Top View ORDERING INFORMATION DG444B QFN16 (4x4 mm) Temp Range D1 IN1 IN2 D2 16 15 14 13 16 Pin Plastic DIP 16-Pin S1 1 12 S2 V− 2 11 V+ GND 3 10 VL S4 4 9 S3 5 6 7 Package −40 40 to 85_C 16 Pin Narrow SOIC 16-Pin 16 Pin QFN 4x4 mm 16-Pin Part Number DG444BDJ DG445BDJ DG444BDY DG445BDY DG444BDN DG445BDN 8 D4 IN4 IN3 D3 Top View Document Number: 72626 S-32554—Rev. A, 15-Dec-03 www.vishay.com 1 DG444B/445B Vishay Siliconix New Product ABSOLUTE MAXIMUM RATINGS V+ to V− . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 44 V GND to V− . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25 V VL . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . (GND −0.3 V) to (V+) + 0.3 V Power Dissipation (Package)b 16-Pin Plastic DIPc . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 470 mW 16-Pin Narrow Body SOICd . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 640 mW QFN-16 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 850 mW Digital Inputsa VS, VD . . . . . . . . . . . . . . . . . . . . . . . . . . . (V−) −2 V to (V+) +2 V or 30 mA, whichever occurs first Continuous Current (Any Terminal) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 mA Current, S or D (Pulsed 1 ms, 10% duty cycle) . . . . . . . . . . . . . . . . . . 100 mA Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65 to 125_C Notes: a. Signals on SX, DX, or INX exceeding V+ or V− will be clamped by internal diodes. Limit forward diode current to maximum current ratings. b. All leads welded or soldered to PC Board. c. Derate 6 mW/_C above 75_C d. Derate 8 mW/_C above 75_C Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. SPECIFICATIONS FOR DUAL SUPPLIES Limits Test Conditions Unless Otherwise Specified Parameter −40 to 85_C V+ = 15 V, V− = −15 V VL = 5 V, VIN = 2.4 V, 0.8 Ve Tempa Minb VANALOG Full −15 rDS(on) IS = 1 mA, VD = 10 V Room Full Symbol Typc Maxb Unit Analog Switch Analog Signal Ranged Drain-Source On-Resistance IS(off) Switch Off Leakage Current ID(off) Channel On Leakage Current ID(on) VD = 14 V V, VS = 14 V VS = VD = 14 V 15 V 45 80 95 W Room Full −0.5 −5 0.01 0.5 5 Room Full −0.5 −5 0.01 0.5 5 Room Full −0.5 −10 0.02 0.5 10 nA Digital Control Input Voltage Low VINL Full Input Voltage High VINH Full 2.4 0.8 Input Current VIN Low IINL VIN under test = 0.8 V, All Other = 2.4 V Full −1 −0.01 1 Input Current VIN High IINH VIN under test = 2.4 V, All Other = 0.8 V Full −1 0.01 1 Turn-On Time tON 300 tOFF RL = 1 kW , CL = 35 pF VS = 10 V, See Figure 2 Room Turn-Off Time Room 200 V mA Dynamic Characteristics Charge Off Injectione Isolatione Crosstalk (Channel-to-Channel)d Q OIRR XTALK Source Off Capacitance CS(off) Drain Off Capacitance CD(off) Channel On Capacitance CD(on) CL = 1 nF, VS = 0 V Vgen = 0 V, Rgen = 0 W RL = 50 W , CL = 15 pF, VS = 1 VRMS f = 100 kHz VS = 0 V, V f = 100 kHz VS VD = 0 V, f = 1 MHz Room 1 Room 90 Room 95 Room 5 Room 5 Room 16 ns pC dB pF p Power Supplies Positive Supply Current I+ Negative Supply Current I− Logic Supply Current IIN www.vishay.com 2 Room Full VIN = 0 or 5 V Room Full Room Full 1 5 −1 −5 mA 1 5 Document Number: 72626 S-32554—Rev. A, 15-Dec-03 DG444B/445B Vishay Siliconix New Product SPECIFICATIONS FOR UNIPOLAR SUPPLIES D Suffix Test Conditions Unless Otherwise Specified Parameter −40 to 85_C V+ = 12 V, V− = 0 V VL = 5 V, VIN = 2.4 V, 0.8 Ve Tempa Minb VANALOG Full 0 rDS(on) IS = 1 mA, VD = 3 V, 8 V Symbol Typc Maxb Unit 12 V Room Full 90 160 200 W Room 120 300 Room 60 200 Room 4 Analog Switch Analog Signal Ranged Drain-Source On-Resistanced Dynamic Characteristics Turn-On Time tON Turn-Off Time tOFF RL = 1 kW , CL = 35 pF, VS = 8 V See Figure 2 Q CL = 1 nF, Vgen = 6 V, Rgen = 0 W Charge Injection ns pC Power Supplies Positive Supply Current I+ Negative Supply Current I− Logic Supply Current IIN Room Full VIN = 0 or 5 V Room Full 1 5 −1 −5 mA Room Full VL = 5.25 V, VIN = 0 or 5 V 1 5 Notes: a. Room = 25_C, Full = as determined by the operating temperature suffix. b. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet. c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. d. Guaranteed by design, not subject to production test. e. VIN = input voltage to perform proper function. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) 100 100 90 90 r DS(on)− Drain-Source On-Resistance ( W ) r DS(on)− Drain-Source On-Resistance ( W ) rDS(on) vs. VD and Power Supply Voltages 110 5 V 80 70 10 V 60 50 15 V 40 20 V 30 20 10 −20 −16 −12 −8 −4 0 4 8 VD − Drain Voltage (V) Document Number: 72626 S-32554—Rev. A, 15-Dec-03 12 16 20 rDS(on) vs. VD and Temperature V+ = 15 V V− = −15 V 80 70 60 125_C 50 85_C 40 25_C 30 −55_C 20 10 0 −15 −10 −5 0 5 10 15 VD − Drain Voltage (V) www.vishay.com 3 DG444B/445B Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) rDS(on) vs. VD and Single Power Supply Voltages Leakage Currents vs. Analog Voltage 40 V+ = 5 V 225 V+ = 22 V V− = −22 V TA = 25_C 30 200 20 175 150 I S,I D − Current (pA) r DS(on)− Drain-Source On-Resistance ( W ) 250 7V 125 10 V 100 12 V 15 V 75 ID(on) 10 IS(off), ID(off) 0 −10 −20 50 −30 25 −40 −20 0 0 2 4 6 8 10 12 14 16 −15 −10 VD − Drain Voltage (V) Leakage Current vs. Temperature 30 V+ = 15 V V− = −15 V VS, VD = 14 V 0 5 10 15 20 QS, QD − Charge Injection vs. Analog Voltage 20 100 pA 10 Q − Charge (pC) I S,I D − Current 1 nA −5 VANALOG − Analog Voltage (V) IS(off), ID(off) 10 pA 0 V+ = 15 V V− = −15 V V+ = 12 V V− = 0 V −10 −20 1 pA −55 −35 −15 5 25 45 65 85 −30 −15 105 125 −10 −5 0 5 10 15 VANALOG − Analog Voltage (V) Temperature (_C) Off Isolation vs. Frequency 120 V+ = +15 V V− = −15 V 110 OIRR (dB) 100 90 RL = 50 W 80 70 60 50 40 10 k 100 k 1M 10 M f − Frequency (Hz) www.vishay.com 4 Document Number: 72626 S-32554—Rev. A, 15-Dec-03 DG444B/445B Vishay Siliconix New Product SCHEMATIC DIAGRAM (TYPICAL CHANNEL) V+ S VL V− Level Shift/ Drive VIN V+ GND D V− FIGURE 1. TEST CIRCUITS +5 V +15 V Logic Input VL 0V D IN VO RL 1 kW 3V CL 35 pF tOFF Switch Input VS Switch Output 0V VO V− GND tr <20 ns tf <20 ns 50% 50% V+ S 10 V 3V −15 V 80% tON Note: CL (includes fixture and stray capacitance) 80% Logic input waveform is inverted for DG445. FIGURE 2. Switching Time Rg Vg +5 V +15 V VL V+ S DVO VO D IN CL 1 nF 3V GND VO INX (DG444B) OFF ON OFF V− INX −15 V OFF ON Q = DVO x CL OFF (DG445B) FIGURE 3. Charge Injection Document Number: 72626 S-32554—Rev. A, 15-Dec-03 www.vishay.com 5 DG444B/445B Vishay Siliconix New Product TEST CIRCUITS C = 1 mF tantalum in parallel with 0.01 mF ceramic +5 V S1 VS VL +15 V V+ C +5 V D1 VL Rg = 50 W IN1 0V, 2.4 V NC 0V, 2.4 V C V+ S VS 50 W +15 V VO D Rg = 50 W S2 VO D2 0V, 2.4 V RL IN2 GND V− GND C XTALK Isolation = 20 log V− C −15 V −15 V C = RF bypass RL IN Off Isolation = 20 log VS VS VO VO FIGURE 4. Crosstalk FIGURE 5. Off Isolation +5 V +15 V V+ VL C S Meter IN HP4192A Impedance Analyzer or Equivalent 0 V, 2.4 V D GND V− f = 1 MHz C −15 V FIGURE 6. Source/Drain Capacitances APPLICATIONS +15 V +5 V +15 V VL V+ 1/ +15 V 4 DG444B VOUT +5 V 0V 10 kW 0V VIN GND V− FIGURE 7. Level Shifter www.vishay.com 6 Document Number: 72626 S-32554—Rev. A, 15-Dec-03 DG444B/445B Vishay Siliconix New Product APPLICATIONS VIN + − VOUT +5V +15 V VL Gain error is determined only by the resistor tolerance. Op amp offset and CMRR will limit accuracy of circuit. V+ GAIN1 AV = 1 R1 90 kW GAIN2 AV = 10 R2 5 kW With SW4 Closed: VOUT VIN GAIN3 AV = 20 R3 4 kW GAIN4 AV = 100 R4 1 kW = R1 + R2 + R3 + R4 R4 = 100 DG444B or DG445B V− GND −15 V FIGURE 8. Precision-Weighted Resistor Programmable-Gain Amplifier +5 V +15 V V1 Logic Input Low = Sample High = Hold DG444B +15 V −15 V +15 V − VIN + J202 C1 50 pF 5 MW 5.1 MW R1 200 kW 2N4400 VOUT V2 30 pF GND C2 1000 pF J500 J507 −15 V FIGURE 9. Precision Sample-and-Hold Document Number: 72626 S-32554—Rev. A, 15-Dec-03 www.vishay.com 7