MOSFET MetalOxideSemiconductorFieldEffectTransistor CoolMOS™P6 600VCoolMOS™P6PowerTransistor IPP60R190P6 DataSheet Rev.2.0 Final PowerManagement&Multimarket 600VCoolMOS™P6PowerTransistor IPP60R190P6 1Description TO-220 tab CoolMOS™isarevolutionarytechnologyforhighvoltagepower MOSFETs,designedaccordingtothesuperjunction(SJ)principleand pioneeredbyInfineonTechnologies.CoolMOS™P6seriescombinesthe experienceoftheleadingSJMOSFETsupplierwithhighclassinnovation. TheoffereddevicesprovideallbenefitsofafastswitchingSJMOSFET whilenotsacrificingeaseofuse.Extremelylowswitchingandconduction lossesmakeswitchingapplicationsevenmoreefficient,morecompact, lighterandcooler. Features •IncreasedMOSFETdv/dtruggedness •ExtremelylowlossesduetoverylowFOMRdson*QgandEoss •Veryhighcommutationruggedness •Easytouse/drive •Pb-freeplating,Halogenfreemoldcompound •QualifiedforindustrialgradeapplicationsaccordingtoJEDEC(J-STD20 andJESD22) Drain Pin 2, tab Gate Pin 1 Source Pin 3 Applications PFCstages,hardswitchingPWMstagesandresonantswitchingstages fore.g.PCSilverbox,Adapter,LCD&PDPTV,Lighting,Server,Telecom andUPS. Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegate orseparatetotempolesisgenerallyrecommended. Table1KeyPerformanceParameters Parameter Value Unit VDS @ Tj,max 650 V RDS(on),max 190 mΩ Qg.typ 37 nC ID,pulse 57 A Eoss@400V 4.9 µJ Body diode di/dt 500 A/µs Type/OrderingCode Package Marking IPP60R190P6 PG-TO 220 6R190P6 Final Data Sheet 2 RelatedLinks see Appendix A Rev.2.0,2013-06-07 600VCoolMOS™P6PowerTransistor IPP60R190P6 TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Test Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Appendix A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Final Data Sheet 3 Rev.2.0,2013-06-07 600VCoolMOS™P6PowerTransistor IPP60R190P6 2Maximumratings atTj=25°C,unlessotherwisespecified Table2Maximumratings Parameter Symbol Continuous drain current 1) Values Unit Note/TestCondition 20.2 12.7 A TC=25°C TC=100°C - 57 A TC=25°C - - 419 mJ ID=3.5A; VDD=50V; see table 10 EAR - - 0.63 mJ ID=3.5A; VDD=50V; see table 10 Avalanche current, repetitive IAR - - 3.5 A - MOSFET dv/dt ruggedness dv/dt - - 100 V/ns VDS=0...400V Gate source voltage (static) VGS -20 - 20 V static; Gate source voltage (dynamic) VGS -30 - 30 V AC (f>1 Hz) Power dissipation Ptot - - 151 W TC=25°C Storage temperature Tstg -55 - 150 °C - Operating junction temperature Tj -55 - 150 °C - Mounting torque - - - 60 Ncm M3 and M3.5 screws Continuous diode forward current IS - - 17.5 A TC=25°C Diode pulse current2) IS,pulse - - 57 A TC=25°C Reverse diode dv/dt 3) dv/dt - - 15 V/ns VDS=0...400V,ISD<=IS,Tj=25°C see table 8 Maximum diode commutation speed dif/dt - - 500 A/µs VDS=0...400V,ISD<=IS,Tj=25°C see table 8 Insulation withstand voltage VISO - - n.a. V Vrms,TC=25°C,t=1min Min. Typ. Max. ID - - Pulsed drain current 2) ID,pulse - Avalanche energy, single pulse EAS Avalanche energy, repetitive 1) Limited by Tj max. Maximum duty cycle D=0.75 Pulse width tp limited by Tj,max 3) IdenticallowsideandhighsideswitchwithidenticalRG 2) Final Data Sheet 4 Rev.2.0,2013-06-07 600VCoolMOS™P6PowerTransistor IPP60R190P6 3Thermalcharacteristics Table3Thermalcharacteristics Parameter Symbol Thermal resistance, junction - case Thermal resistance, junction - ambient Values Unit Note/TestCondition Min. Typ. Max. RthJC - - 0.83 °C/W - RthJA - - 62 °C/W leaded Thermal resistance, junction - ambient for RthJA SMD version - - - °C/W n.a. Soldering temperature, wavesoldering only allowed at leads - - 260 °C Final Data Sheet Tsold 5 1.6mm (0.063 in.) from case for 10s Rev.2.0,2013-06-07 600VCoolMOS™P6PowerTransistor IPP60R190P6 4Electricalcharacteristics atTj=25°C,unlessotherwisespecified Table4Staticcharacteristics Parameter Symbol Drain-source breakdown voltage Values Unit Note/TestCondition - V VGS=0V,ID=1mA 4.0 4.5 V VDS=VGS,ID=0.63mA - 10 1 - µA VDS=600,VGS=0V,Tj=25°C VDS=600,VGS=0V,Tj=150°C IGSS - - 100 nA VGS=20V,VDS=0V Drain-source on-state resistance RDS(on) - 0.171 0.445 0.190 - Ω VGS=10V,ID=7.6A,Tj=25°C VGS=10V,ID=7.6A,Tj=150°C Gate resistance RG - 3.4 - Ω f=1MHz,opendrain Unit Note/TestCondition Min. Typ. Max. V(BR)DSS 600 - Gate threshold voltage V(GS)th 3.5 Zero gate voltage drain current IDSS Gate-source leakage current Table5Dynamiccharacteristics Parameter Symbol Input capacitance Values Min. Typ. Max. Ciss - 1750 - pF VGS=0V,VDS=100V,f=1MHz Output capacitance Coss - 76 - pF VGS=0V,VDS=100V,f=1MHz Effective output capacitance, energy related 1) Co(er) - 61 - pF VGS=0V,VDS=0...400V Effective output capacitance, time related Co(tr) - 264 - pF ID=constant,VGS=0V,VDS=0...400V Turn-on delay time td(on) - 15 - ns VDD=400V,VGS=13V,ID=9.5A, RG=3.4Ω;seetable9 Rise time tr - 8 - ns VDD=400V,VGS=13V,ID=9.5A, RG=3.4Ω;seetable9 Turn-off delay time td(off) - 45 - ns VDD=400V,VGS=13V,ID=9.5A, RG=3.4Ω;seetable9 Fall time tf - 7 - ns VDD=400V,VGS=13V,ID=9.5A, RG=3.4Ω;seetable9 Unit Note/TestCondition 2) Table6Gatechargecharacteristics Parameter Symbol Gate to source charge Values Min. Typ. Max. Qgs - 11 - nC VDD=400V,ID=9.5A,VGS=0to10V Gate to drain charge Qgd - 13 - nC VDD=400V,ID=9.5A,VGS=0to10V Gate charge total Qg - 37 - nC VDD=400V,ID=9.5A,VGS=0to10V Gate plateau voltage Vplateau - 6.1 - V VDD=400V,ID=9.5A,VGS=0to10V 1) Co(er)isafixedcapacitancethatgivesthesamestoredenergyasCosswhileVDSisrisingfrom0to400V Co(tr)isafixedcapacitancethatgivesthesamechargingtimeasCosswhileVDSisrisingfrom0to400V 2) Final Data Sheet 6 Rev.2.0,2013-06-07 600VCoolMOS™P6PowerTransistor IPP60R190P6 Table7Reversediodecharacteristics Parameter Symbol Diode forward voltage Values Unit Note/TestCondition - V VGS=0V,IF=9.5A,Tj=25°C 310 - ns VR=400V,IF=9.5A,diF/dt=100A/µs; see table 8 - 4 - µC VR=400V,IF=9.5A,diF/dt=100A/µs; see table 8 - 25 - A VR=400V,IF=9.5A,diF/dt=100A/µs; see table 8 Min. Typ. Max. VSD - 0.9 Reverse recovery time trr - Reverse recovery charge Qrr Peak reverse recovery current Irrm Final Data Sheet 7 Rev.2.0,2013-06-07 600VCoolMOS™P6PowerTransistor IPP60R190P6 5Electricalcharacteristicsdiagrams Diagram1:Powerdissipation Diagram2:Safeoperatingarea 102 160 1 µs 10 µs 140 100 µs 101 120 1 ms 10 ms 100 ID[A] Ptot[W] 100 80 DC 10-1 60 40 10-2 20 0 0 25 50 75 100 125 10-3 150 100 101 TC[°C] 102 103 VDS[V] Ptot=f(TC) ID=f(VDS);TC=25°C;D=0;parameter:tp Diagram3:Safeoperatingarea Diagram4:Max.transientthermalimpedance 2 101 10 1 µs 10 µs 100 µs 101 1 ms 100 100 ZthJC[K/W] 10 ms ID[A] DC 10-1 0.5 0.2 0.1 10-1 0.05 0.02 10-2 0.01 single pulse 10-3 100 101 102 103 10-2 10-5 10-4 VDS[V] 10-2 10-1 tp[s] ID=f(VDS);TC=80°C;D=0;parameter:tp Final Data Sheet 10-3 ZthJC=f(tP);parameter:D=tp/T 8 Rev.2.0,2013-06-07 600VCoolMOS™P6PowerTransistor IPP60R190P6 Diagram5:Typ.outputcharacteristics Diagram6:Typ.outputcharacteristics 60 40 20 V 10 V 55 20 V 10 V 35 50 8V 45 30 8V 40 25 7V ID[A] ID[A] 35 7V 30 20 25 15 6V 20 15 10 5.5 V 6V 10 5 0 5V 5.5 V 5 4.5 V 0 5 10 5V 15 0 20 4.5 V 0 5 10 VDS[V] 15 20 VDS[V] ID=f(VDS);Tj=25°C;parameter:VGS ID=f(VDS);Tj=125°C;parameter:VGS Diagram7:Typ.drain-sourceon-stateresistance Diagram8:Drain-sourceon-stateresistance 1.50 0.50 1.40 0.45 1.30 0.40 1.20 1.10 0.35 0.90 6V 5.5 V 6.5 V RDS(on)[Ω] RDS(on)[Ω] 1.00 7V 0.80 0.70 10 V 98% 0.25 typ 0.20 0.60 20 V 0.50 0.30 0.15 0.40 0.10 0.30 0.20 0 10 20 30 40 0.05 -50 -25 0 25 ID[A] RDS(on)=f(ID);Tj=125°C;parameter:VGS Final Data Sheet 50 75 100 125 150 Tj[°C] RDS(on)=f(Tj);ID=7.6A;VGS=10V 9 Rev.2.0,2013-06-07 600VCoolMOS™P6PowerTransistor IPP60R190P6 Diagram9:Typ.transfercharacteristics Diagram10:Typ.gatecharge 60 10 25 °C 9 50 8 7 40 120 V 480 V 20 30 30 VGS[V] ID[A] 6 150 °C 5 4 20 3 2 10 1 0 0 2 4 6 8 10 0 12 0 10 VGS[V] 40 Qgate[nC] ID=f(VGS);VDS=20V;parameter:Tj VGS=f(Qgate);ID=9.5Apulsed;parameter:VDD Diagram11:Forwardcharacteristicsofreversediode Diagram12:Avalancheenergy 2 10 450 400 350 101 IF[A] 125 °C EAS[mJ] 300 25 °C 100 250 200 150 100 50 10-1 0.0 0.5 1.0 1.5 2.0 0 25 50 VSD[V] 100 125 150 Tj[°C] IF=f(VSD);parameter:Tj Final Data Sheet 75 EAS=f(Tj);ID=3.5A;VDD=50V 10 Rev.2.0,2013-06-07 600VCoolMOS™P6PowerTransistor IPP60R190P6 Diagram13:Drain-sourcebreakdownvoltage Diagram14:Typ.capacitances 104 700 680 Ciss 660 103 620 C[pF] VBR(DSS)[V] 640 600 102 Coss 580 101 560 Crss 540 520 -75 -50 -25 0 25 50 75 100 125 150 175 100 0 100 Tj[°C] 200 300 400 500 VDS[V] VBR(DSS)=f(Tj);ID=1mA C=f(VDS);VGS=0V;f=1MHz Diagram15:Typ.Cossstoredenergy 7 6 Eoss[µJ] 5 4 3 2 1 0 0 100 200 300 400 500 VDS[V] Eoss=f(VDS) Final Data Sheet 11 Rev.2.0,2013-06-07 600VCoolMOS™P6PowerTransistor IPP60R190P6 6TestCircuits Table8Diodecharacteristics Test circuit for diode characteristics Diode recovery waveform V ,I Rg1 VDS( peak) VDS VDS VDS trr IF Rg 2 tF tS dIF / dt QF IF t dIrr / dt trr =tF +tS Qrr = QF + QS Irrm Rg1 = Rg 2 IF 10 %Irrm QS Table9Switchingtimes Switching times test circuit for inductive load Switching times waveform VDS 90% VDS VGS VGS 10% td(on) td(off) tr ton tf toff Table10Unclampedinductiveload Unclamped inductive load test circuit Unclamped inductive waveform V(BR)DS ID VD VDS VDS Final Data Sheet 12 ID VDS Rev.2.0,2013-06-07 600VCoolMOS™P6PowerTransistor IPP60R190P6 7PackageOutlines Figure1OutlinePG-TO220,dimensionsinmm/inches Final Data Sheet 13 Rev.2.0,2013-06-07 600VCoolMOS™P6PowerTransistor IPP60R190P6 8AppendixA Table11RelatedLinks • IFXCoolMOSTMP6Webpage:www.infineon.com • IFXCoolMOSTMP6applicationnote:www.infineon.com • IFXCoolMOSTMP6simulationmodel:www.infineon.com • IFXDesigntools:www.infineon.com Final Data Sheet 14 Rev.2.0,2013-06-07 600VCoolMOS™P6PowerTransistor IPP60R190P6 RevisionHistory IPP60R190P6 Revision:2013-06-07,Rev.2.0 Previous Revision Revision Date Subjects (major changes since last revision) 2.0 2013-06-07 Release of final version WeListentoYourComments Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?Yourfeedbackwillhelpustocontinuously improvethequalityofthisdocument.Pleasesendyourproposal(includingareferencetothisdocument)to: [email protected] Edition2011-08-01 Publishedby InfineonTechnologiesAG 81726München,Germany ©2011InfineonTechnologiesAG AllRightsReserved. LegalDisclaimer Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics.With respecttoanyexamplesorhintsgivenherein,anytypicalvaluesstatedhereinand/oranyinformationregardingtheapplication ofthedevice,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithout limitation,warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty. Information Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon TechnologiesOffice(www.infineon.com). Warnings Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion, pleasecontactthenearestInfineonTechnologiesOffice. TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered. Final Data Sheet 15 Rev.2.0,2013-06-07