Data Sheet

DISCRETE SEMICONDUCTORS
DATA SHEET
dbook, halfpage
MBD127
BZA800AVL series
Quadruple low capacitance ESD
suppressor
Product data sheet
Supersedes data of 2003 Apr 01
2003 Oct 20
NXP Semiconductors
Product data sheet
Quadruple low capacitance ESD
suppressor
BZA800AVL series
FEATURES
PINNING
• Low diode capacitance
PIN
DESCRIPTION
• Low leakage current
1
cathode 1
• SOT353 (SC-88A) surface mount package
2
common anode
• Common anode configuration.
3
cathode 2
4
cathode 3
5
cathode 4
APPLICATIONS
• Communication systems
• Computers and peripherals
• Audio and video equipment.
handbook, halfpage5
DESCRIPTION
4
1
Monolithic transient voltage suppressor diode in a five lead
SOT353 (SC-88A) package for 4-bit wide ESD transient
suppression.
3
2
4
5
MARKING
1
2
3
MGT580
TYPE NUMBER
MARKING CODE
BZA856AVL
R3
BZA862AVL
R2
BZA868AVL
R1
Fig.1
Simplified outline (SOT353; SC-88A) and
symbol.
ORDERING INFORMATION
PACKAGE
TYPE NUMBER
NAME
DESCRIPTION
VERSION
BZA856AVL
−
plastic surface mounted package; 5 leads
SOT353
BZA862AVL
−
plastic surface mounted package; 5 leads
SOT353
BZA868AVL
−
plastic surface mounted package; 5 leads
SOT353
2003 Oct 20
2
NXP Semiconductors
Product data sheet
Quadruple low capacitance ESD
suppressor
BZA800AVL series
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
Per diode
IZ
working current
Tamb = 25 °C
−
note 1
mA
IF
continuous forward current
Tamb = 25 °C
−
200
mA
IFSM
non-repetitive peak forward current
tp = 1 ms; square pulse
−
3.5
A
Ptot
total power dissipation
Tamb = 25 °C; note 2; see Fig.5
−
300
mW
PZSM
non repetitive peak reverse power
dissipation
square pulse; tp = 1 ms
−
6
W
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
−
150
°C
ESD
electrostatic discharge
IEC 61000-4-2 (contact discharge) 15
−
kV
HBM MIL-Std 883
−
kV
10
Notes
1. DC working current limited by Ptot(max).
2. Device mounted on standard printed-circuit board.
ESD STANDARDS COMPLIANCE
STANDARD
CONDITIONS
IEC 61000-4-2, level 4 (ESD)
>15 kV (air); >8 kV (contact discharge)
HBM MIL-Std 883, class 3
>4 kV
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-a
thermal resistance from junction to
ambient
all diodes loaded
410
K/W
Rth j-s
thermal resistance from junction to
solder point; note 1
one diode loaded
200
K/W
all diodes loaded
185
K/W
Note
1. Solder point of common anode (pin 2).
2003 Oct 20
3
NXP Semiconductors
Product data sheet
Quadruple low capacitance ESD
suppressor
BZA800AVL series
ELECTRICAL CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
V
BZA856AVL
VR = 3 V
−
−
200
nA
BZA862AVL
VR = 4 V
−
−
100
nA
BZA868AVL
VR = 4.3 V
−
−
20
nA
working voltage
IZ = 1 mA
BZA856AVL
5.32
5.6
5.88
V
BZA862AVL
5.89
6.2
6.51
V
BZA868AVL
6.46
6.8
7.14
V
BZA856AVL
−
−
200
Ω
BZA862AVL
−
−
150
Ω
BZA868AVL
−
−
100
Ω
BZA856AVL
−
1.3
−
mV/K
BZA862AVL
−
2.4
−
mV/K
−
2.9
−
mV/K
BZA856AVL
−
22
28
pF
BZA862AVL
−
18
22
pF
BZA868AVL
−
16
19
pF
BZA856AVL
−
12
17
pF
BZA862AVL
−
9
12
pF
BZA868AVL
−
8
11
pF
BZA856AVL
−
−
0.90
A
BZA862AVL
−
−
0.85
A
BZA868AVL
−
−
0.80
A
differential resistance
temperature coefficient
diode capacitance
diode capacitance
IZSM
2003 Oct 20
UNIT
1.2
IZ = 1 mA
IZ = 1 mA
BZA868AVL
Cd
MAX.
−
reverse current
SZ
TYP.
−
forward voltage
IR
rdif
MIN.
IF = 200 mA
VF
VZ
CONDITIONS
non-repetitive peak reverse current
f = 1 MHz; VR = 0
f = 1 MHz; VR = 5 V
tp = 1 ms; Tamb = 25 °C
4
NXP Semiconductors
Product data sheet
Quadruple low capacitance ESD
suppressor
BZA800AVL series
MLD997
10
MLD999
102
handbook, halfpage
handbook, halfpage
IZSM
(A)
PZSM
(W)
BZA856AVL
BZA856AVL
1
BZA862AVL
10
BZA868AVL
BZA862AVL/BZA868AVL
10−1
10−2
10−1
1
tp (ms)
1
10−2
10
Fig.3
Fig.2
MLD998
1
tp (ms)
MLD793
400
handbook, halfpage
handbook, halfpage
(pF)
Ptot
(mW)
22
10
Maximum non-repetitive peak reverse
power dissipation as a function of pulse
duration (square pulse).
Maximum non-repetitive peak reverse
current as a function of pulse time.
26
Cd
10−1
300
18
200
BZA856AVL
14
BZA862AVL
100
10
BZA868AVL
0
6
1
0
2
3
4
VR (V)
0
5
50
100
Tamb (°C)
Tj = 25 °C; f = 1 MHz.
Fig.4
Diode capacitance as a function of reverse
voltage; typical values.
2003 Oct 20
Fig.5 Power derating curve.
5
150
NXP Semiconductors
Product data sheet
Quadruple low capacitance ESD
suppressor
handbook, full pagewidth
ESD TESTER
RZ
450 Ω
BZA800AVL series
RG 223/U
50 Ω coax
CZ
10×
ATTENUATOR
DIGITIZING
OSCILLOSCOPE
50 Ω
note 1
1/4 BZA800AVL
IEC 1000-4-2 network
CZ = 150 pF; RZ = 330 Ω
Note 1: attenuator is only used for open
socket high voltage measurements
vertical scale = 200 V/div
horizontal scale = 50 ns/div
vertical scale = 5 V/div
horizontal scale = 50 ns/div
BZA868AVL
GND3
BZA862AVL
GND2
GND
BZA856AVL
GND1
unclamped +1 kV ESD voltage waveform
(IEC 1000-4-2 network)
clamped +1 kV ESD voltage waveform
(IEC 1000-4-2 network)
GND
GND
vertical scale = 200 V/div
horizontal scale = 50 ns/div
vertical scale = 5 V/div
horizontal scale = 50 ns/div
unclamped −1 kV ESD voltage waveform
(IEC 1000-4-2 network)
clamped −1 kV ESD voltage waveform
(IEC 1000-4-2 network)
Fig.6 ESD clamping test set-up and waveforms.
2003 Oct 20
6
MLE004
NXP Semiconductors
Product data sheet
Quadruple low capacitance ESD
suppressor
BZA800AVL series
APPLICATION INFORMATION
Typical common anode application
A quadruple transient suppressor in a SOT353 package makes it possible to protect four separate lines using only one
package. Two simplified examples are shown in Figs.7 and 8.
handbook, full pagewidth
keyboard,
terminal,
printer,
etc.
A
B
C
D
I/O
FUNCTIONAL
DECODER
BZA800AVL
GND
MLE006
Fig.7 Computer interface protection.
VDD
handbook, full pagewidth
VGG
address bus
RAM
I/O
ROM
data bus
CPU
CLOCK
control bus
BZA800AVL
GND
MLE007
Fig.8 Microprocessor protection.
2003 Oct 20
7
NXP Semiconductors
Product data sheet
Quadruple low capacitance ESD
suppressor
BZA800AVL series
Device placement and printed-circuit board layout
Circuit board layout is of extreme importance in the
suppression of transients. The clamping voltage of the
BZA800AVL is determined by the peak transient current
and the rate of rise of that current (di/dt). Since parasitic
inductances can further add to the clamping voltage
(V = L di/dt) the series conductor lengths on the
printed-circuit board should be kept to a minimum. This
includes the lead length of the suppression element.
In addition to minimizing conductor length the following
printed-circuit board layout guidelines are recommended:
1. Place the suppression element close to the input
terminals or connectors
2. Keep parallel signal paths to a minimum
3. Avoid running protection conductors in parallel with
unprotected conductors
4. Minimize all printed-circuit board loop areas including
power and ground loops
5. Minimize the length of the transient return path to
ground
6. Avoid using shared transient return paths to a common
ground point.
2003 Oct 20
8
NXP Semiconductors
Product data sheet
Quadruple low capacitance ESD
suppressor
BZA800AVL series
PACKAGE OUTLINE
Plastic surface mounted package; 5 leads
SOT353
D
E
B
y
X
A
HE
5
v M A
4
Q
A
A1
1
2
e1
3
bp
c
Lp
w M B
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
max
bp
c
D
E (2)
e
e1
HE
Lp
Q
v
w
y
mm
1.1
0.8
0.1
0.30
0.20
0.25
0.10
2.2
1.8
1.35
1.15
1.3
0.65
2.2
2.0
0.45
0.15
0.25
0.15
0.2
0.2
0.1
OUTLINE
VERSION
SOT353
2003 Oct 20
REFERENCES
IEC
JEDEC
EIAJ
SC-88A
9
EUROPEAN
PROJECTION
ISSUE DATE
97-02-28
NXP Semiconductors
Product data sheet
Quadruple low capacitance ESD
suppressor
BZA800AVL series
DATA SHEET STATUS
DOCUMENT
STATUS(1)
PRODUCT
STATUS(2)
DEFINITION
Objective data sheet
Development
This document contains data from the objective specification for product
development.
Preliminary data sheet
Qualification
This document contains data from the preliminary specification.
Product data sheet
Production
This document contains the product specification.
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product status of device(s) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
Limiting values ⎯ Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) may cause permanent damage to
the device. Limiting values are stress ratings only and
operation of the device at these or any other conditions
above those given in the Characteristics sections of this
document is not implied. Exposure to limiting values for
extended periods may affect device reliability.
DISCLAIMERS
General ⎯ Information in this document is believed to be
accurate and reliable. However, NXP Semiconductors
does not give any representations or warranties,
expressed or implied, as to the accuracy or completeness
of such information and shall have no liability for the
consequences of use of such information.
Right to make changes ⎯ NXP Semiconductors
reserves the right to make changes to information
published in this document, including without limitation
specifications and product descriptions, at any time and
without notice. This document supersedes and replaces all
information supplied prior to the publication hereof.
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products are sold subject to the general terms and
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http://www.nxp.com/profile/terms, including those
pertaining to warranty, intellectual property rights
infringement and limitation of liability, unless explicitly
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case of any inconsistency or conflict between information
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not designed, authorized or warranted to be suitable for
use in medical, military, aircraft, space or life support
equipment, nor in applications where failure or malfunction
of an NXP Semiconductors product can reasonably be
expected to result in personal injury, death or severe
property or environmental damage. NXP Semiconductors
accepts no liability for inclusion and/or use of NXP
Semiconductors products in such equipment or
applications and therefore such inclusion and/or use is at
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No offer to sell or license ⎯ Nothing in this document
may be interpreted or construed as an offer to sell products
that is open for acceptance or the grant, conveyance or
implication of any license under any copyrights, patents or
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Export control ⎯ This document as well as the item(s)
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Applications ⎯ Applications that are described herein for
any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
warranty that such applications will be suitable for the
specified use without further testing or modification.
2003 Oct 20
Quick reference data ⎯ The Quick reference data is an
extract of the product data given in the Limiting values and
Characteristics sections of this document, and as such is
not complete, exhaustive or legally binding.
10
NXP Semiconductors
Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were
made to the content, except for the legal definitions and disclaimers.
Contact information
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© NXP B.V. 2009
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under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
R76/02/pp11
Date of release: 2003 Oct 20
Document order number: 9397 750 11934