PHILIPS BZA856AL

DISCRETE SEMICONDUCTORS
DATA SHEET
dbook, halfpage
MBD127
BZA800AL series
Quadruple ESD transient voltage
suppressor
Product data sheet
2002 Jan 11
NXP Semiconductors
Product data sheet
Quadruple ESD transient voltage
suppressor
BZA800AL series
FEATURES
PINNING
• ESD rating >8 kV contact discharge, according to
IEC1000-4-2
PIN
• SOT353 (SC-88A) surface mount package
• Common anode configuration.
APPLICATIONS
DESCRIPTION
1
cathode 1
2
common anode
3
cathode 2
4
cathode 3
5
cathode 4
• Computers and peripherals
• Audio and video equipment
• Communication systems.
DESCRIPTION
handbook, halfpage5
4
1
Monolithic transient voltage suppressor diode in a five lead
SOT353 (SC-88A) package for 4-bit wide ESD transient
suppression.
3
2
4
5
MARKING
1
2
3
MGT580
TYPE NUMBER
MARKING CODE
BZA856AL
M1
BZA862AL
M2
BZA868AL
M3
Fig.1 Simplified outline (SOT353) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
Per diode
IZ
working current
Tamb = 25 °C
−
note 1
mA
IF
continuous forward current
Tamb = 25 °C
−
200
mA
IFSM
non-repetitive peak forward current tp = 1 ms; square pulse
−
4
A
Ptot
total power dissipation
Tamb = 25 °C; note 2; see Fig.5
−
300
mW
PZSM
non repetitive peak reverse power
dissipation:
square pulse; tp = 1 ms; see Fig.3
BZA856AL
−
16
W
BZA862AL
−
15
W
BZA868AL
−
14
W
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
−
150
°C
Notes
1. DC working current limited by Ptot(max).
2. Device mounted on standard printed-circuit board.
2002 Jan 11
2
NXP Semiconductors
Product data sheet
Quadruple ESD transient voltage
suppressor
BZA800AL series
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-a
thermal resistance from junction to ambient
all diodes loaded
410
K/W
Rth j-s
thermal resistance from junction to solder point;
note 1
one diode loaded
200
K/W
all diodes loaded
185
K/W
MAX.
UNIT
Note
1. Solder point of common anode (pin 2).
ELECTRICAL CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
−
1.3
V
BZA856AL
VR = 3 V
−
−
1 000
nA
BZA862AL
VR = 4 V
−
−
500
nA
BZA868AL
VR = 4.3 V
−
−
100
nA
working voltage
IZ = 1 mA
BZA856AL
5.32
5.6
5.88
V
BZA862AL
5.89
6.2
6.51
V
BZA868AL
6.46
6.8
7.14
V
BZA856AL
−
−
400
Ω
BZA862AL
−
−
300
Ω
BZA868AL
−
−
200
Ω
BZA856AL
−
0.3
−
mV/K
BZA862AL
−
1.6
−
mV/K
BZA868AL
−
2.2
−
mV/K
BZA856AL
−
−
125
pF
BZA862AL
−
−
105
pF
−
−
90
pF
BZA856AL
−
−
2.2
A
BZA862AL
−
−
2.1
A
BZA868AL
−
−
2
A
IR
reverse current
SZ
Cd
differential resistance
temperature coefficient
diode capacitance
IZ = 1 mA
IZ = 1 mA
f = 1 MHz; VR = 0
BZA868AL
IZSM
2002 Jan 11
TYP.
−
forward voltage
rdif
MIN.
IF = 200 mA
VF
VZ
CONDITIONS
non-repetitive peak reverse current
tp = 1 ms; Tamb = 25 °C
3
NXP Semiconductors
Product data sheet
Quadruple ESD transient voltage
suppressor
BZA800AL series
MLD790
10
MLD791
102
handbook, halfpage
handbook, halfpage
PZSM
IZSM
(A)
(W)
BZA856AL
BZA856AL
BZA862AL
1
10
BZA862AL
BZA868AL
BZA868AL
10−1
10−2
10−1
1
tp (ms)
1
10−2
10
10−1
1
tp (ms)
10
PZSM = VZSM × IZSM.
VZSM is the non-repetitive peak reverse voltage at IZSM.
Fig.3
Fig.2
Maximum non-repetitive peak reverse
power dissipation as a function of pulse
duration (square pulse).
Maximum non-repetitive peak reverse
current as a function of pulse time.
MLD792
120
MLD793
400
handbook, halfpage
handbook, halfpage
Ptot
(mW)
Cd
(pF)
300
80
200
BZA856AL
BZA862AL
40
BZA868AL
100
0
0
0
2
4
6
VR (V)
8
0
50
100
Tamb (°C)
Tj = 25 °C; f = 1 MHz.
Fig.4
Diode capacitance as a function of reverse
voltage; typical values.
2002 Jan 11
Fig.5 Power derating curve.
4
150
NXP Semiconductors
Product data sheet
Quadruple ESD transient voltage
suppressor
handbook, full pagewidth
ESD TESTER
RZ
450 Ω
BZA800AL series
RG 223/U
50 Ω coax
CZ
10×
ATTENUATOR
DIGITIZING
OSCILLOSCOPE
50 Ω
note 1
1/4 BZA800AL
IEC 61000-4-2 network
CZ = 150 pF; RZ = 330 Ω
Note 1: attenuator is only used for open
socket high voltage measurements
vertical scale = 100 V/div
horizontal scale = 50 ns/div
BZA868AL
vertical scale = 5 V/div
horizontal scale = 50 ns/div
BZA862AL
BZA856AL
GND
unclamped +1 kV ESD voltage waveform
(IEC 61000-4-2 network)
clamped +1 kV ESD voltage waveform
(IEC 61000-4-2 network)
GND
GND
vertical scale = 100 V/div
horizontal scale = 50 ns/div
vertical scale = 5 V/div
horizontal scale = 50 ns/div
unclamped −1 kV ESD voltage waveform
(IEC 61000-4-2 network)
clamped −1 kV ESD voltage waveform
(IEC 61000-4-2 network)
Fig.6 ESD clamping test set-up and waveforms.
2002 Jan 11
5
MLD794
NXP Semiconductors
Product data sheet
Quadruple ESD transient voltage
suppressor
BZA800AL series
APPLICATION INFORMATION
Typical common anode application
A quadruple transient suppressor in a SOT353 (SC88A) package makes it possible to protect four separate lines using
only one package. A simplified example is shown in Fig 7.
handbook, full pagewidth
keyboard,
terminal,
printer,
etc.
A
B
C
D
I/O
FUNCTIONAL
DECODER
BZA800AL
GND
MLD795
Fig.7 Computer interface protection.
Device placement and printed-circuit board layout
Circuit board layout is of extreme importance in the suppression of transients. The clamping voltage of the BZA800AL is
determined by the peak transient current and the rate of rise of that current (di/dt). Since parasitic inductances can further
add to the clamping voltage (V = L di/dt) the series conductor lengths on the printed-circuit board should be kept to a
minimum. This includes the lead length of the suppression element.
In addition to minimizing conductor length the following printed-circuit board layout guidelines are recommended:
1. Place the suppression element close to the input terminals or connectors
2. Keep parallel signal paths to a minimum
3. Avoid running protection conductors in parallel with unprotected conductors
4. Minimize all printed-circuit board loop areas including power and ground loops
5. Minimize the length of the transient return path to ground
6. Avoid using shared transient return paths to a common ground point.
2002 Jan 11
6
NXP Semiconductors
Product data sheet
Quadruple ESD transient voltage
suppressor
BZA800AL series
PACKAGE OUTLINE
Plastic surface mounted package; 5 leads
SOT353
D
E
B
y
X
A
HE
5
v M A
4
Q
A
A1
1
2
e1
3
bp
c
Lp
w M B
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
max
bp
c
D
E (2)
e
e1
HE
Lp
Q
v
w
y
mm
1.1
0.8
0.1
0.30
0.20
0.25
0.10
2.2
1.8
1.35
1.15
1.3
0.65
2.2
2.0
0.45
0.15
0.25
0.15
0.2
0.2
0.1
OUTLINE
VERSION
SOT353
2002 Jan 11
REFERENCES
IEC
JEDEC
EIAJ
SC-88A
7
EUROPEAN
PROJECTION
ISSUE DATE
97-02-28
NXP Semiconductors
Product data sheet
Quadruple ESD transient voltage
suppressor
BZA800AL series
DATA SHEET STATUS
DOCUMENT
STATUS(1)
PRODUCT
STATUS(2)
DEFINITION
Objective data sheet
Development
This document contains data from the objective specification for product
development.
Preliminary data sheet
Qualification
This document contains data from the preliminary specification.
Product data sheet
Production
This document contains the product specification.
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product status of device(s) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
DISCLAIMERS
above those given in the Characteristics sections of this
document is not implied. Exposure to limiting values for
extended periods may affect device reliability.
General ⎯ Information in this document is believed to be
accurate and reliable. However, NXP Semiconductors
does not give any representations or warranties,
expressed or implied, as to the accuracy or completeness
of such information and shall have no liability for the
consequences of use of such information.
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pertaining to warranty, intellectual property rights
infringement and limitation of liability, unless explicitly
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specifications and product descriptions, at any time and
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Quick reference data ⎯ The Quick reference data is an
extract of the product data given in the Limiting values and
Characteristics sections of this document, and as such is
not complete, exhaustive or legally binding.
Applications ⎯ Applications that are described herein for
any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values ⎯ Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) may cause permanent damage to
the device. Limiting values are stress ratings only and
operation of the device at these or any other conditions
2002 Jan 11
8
NXP Semiconductors
Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were
made to the content, except for the legal definitions and disclaimers.
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under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
613514/01/pp9
Date of release: 2002 Jan 11
Document order number: 9397 750 09173