DISCRETE SEMICONDUCTORS DATA SHEET ge MBD127 PESDxL4UG series Low capacitance quadruple ESD protection diode array in SOT353 package Product specification 2004 Mar 23 Philips Semiconductors Product specification Low capacitance quadruple ESD protection diode array in SOT353 package FEATURES PESDxL4UG series QUICK REFERENCE DATA • Uni-directional ESD protection of up to four lines SYMBOL • Low diode capacitance VRWM • Maximum peak pulse power: Ppp = 30 W at tp = 8/20µs PARAMETER Cd UNIT reverse standoff voltage • Low clamping voltage: VCL(R) = 12 V at Ipp = 3 A • Ultra low leakage current: IRM = 5 nA at VRWM = 5 V VALUE PESD3V3L4UG 3.3 V PESD5V0L4UG 5 V diode capacitance • ESD protection > 20 kV PESD3V3L4UG 22 pF • IEC 61000-4-2; level 4 (ESD). PESD5V0L4UG 16 pF number of protected lines 4 APPLICATIONS • Cellular handsets and accessories PINNING • Portable electronics PIN • Computers and peripherals • Communications systems • Audio and video equipment. DESCRIPTION DESCRIPTION 1 cathode 1 2 common anode 3 cathode 2 4 cathode 3 5 cathode 4 ESD protection diode arrays designed to protect up to four transmissions or data lines from ElectroStatic Discharge (ESD) damage and other transients. handbook, halfpage5 MARKING 4 1 TYPE NUMBER MARKING 3 PESD3V3L4UG L1 4 PESD5V0L4UG L2 2 5 1 2 3 MGT580 Fig.1 Simplified outline (SOT353) and symbol. ORDERING INFORMATION PACKAGE TYPE NUMBER NAME DESCRIPTION VERSION PESD3V3L4UG − plastic surface mounted package; 5 leads SOT353 PESD5V0L4UG − plastic surface mounted package; 5 leads SOT353 2004 Mar 23 2 Philips Semiconductors Product specification Low capacitance quadruple ESD protection diode array in SOT353 package PESDxL4UG series LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT Per diode Ipp peak pulse current 8/20 µs; notes 1 and 2 PESD3V3L4UG − 3 A PESD5V0L4UG − 2.5 A Ppp peak pulse power 8/20 µs; notes 1 and 2 − 30 W IFSM non-repetitive peak forward current tp = 1 ms; square pulse − 3.5 A IZSM non-repetitive peak reverse current tp = 1 ms; square pulse − 0.9 A − 0.8 A − 300 mW PESD3V3L4UG PESD5V0L4UG Tamb = 25 °C; note 3 Ptot total power dissipation PZSM non-repetitive peak reverse power tp = 1 ms; square pulse; see Fig.4 dissipation − 6 W Tstg storage temperature −65 +150 °C Tj junction temperature − 150 °C Tamb operating ambient temperature −65 +150 °C Notes 1. Non-repetitive current pulse 8/20 µs exponentially decaying waveform; see Fig.5. 2. Between any of pins 1, 3, 4 or 5 and pin 2. 3. Device mounted on standard printed-circuit board. ESD maximum ratings SYMBOL PARAMETER CONDITIONS VALUE UNIT IEC 61000-4-2 (contact discharge); notes 1 and 2 20 kV HBM MIL-Std 883 10 kV Per diode ESD electrostatic discharge capability Notes 1. Device stressed with ten non-repetitive Electrostatic Discharge (ESD) pulses. 2. Measured from any of pins 1, 3, 4, or 5 to pin 2. ESD standards compliance STANDARD CONDITION IEC 61000-4-2, level 4 (ESD) >15 kV (air); >8 kV (contact) HBM MIL-Std 883, class 3 >4 kV 2004 Mar 23 3 Philips Semiconductors Product specification Low capacitance quadruple ESD protection diode array in SOT353 package PESDxL4UG series THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth(j-a) thermal resistance from junction to ambient all diodes loaded 410 K/W Rth(j-s) thermal resistance from junction to solder point one diode loaded; note 1 200 K/W all diodes loaded; note 1 185 K/W MAX. UNIT Note 1. Solder point of common anode (pin 2). ELECTRICAL CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. Per diode IF = 200 mA − 1 1.2 V PESD3V3L4UG VRWM = 3.3 V − 75 300 nA PESD5V0L4UG VRWM = 5 V − 5 25 nA Ipp = 1 A; notes 1 and 2 − − 8 V Ipp = 3 A; notes 1 and 2 − − 12 V Ipp = 1 A; notes 1 and 2 − − 10 V Ipp = 2.5 A; notes 1 and 2 − − 13 V PESD3V3L4UG − − 3.3 V PESD5V0L4UG − − 5 V PESD3V3L4UG 5.32 5.6 5.88 V PESD5V0L4UG 6.46 6.8 7.14 V PESD3V3L4UG − − 200 Ω PESD5V0L4UG − − 100 Ω VF forward voltage IRM reverse leakage current VCL(R) clamping voltage PESD3V3L4UG PESD5V0L4UG VRWM VBR rdiff Cd reverse stand-off voltage breakdown voltage differential resistance IZ = 1 mA IR = 1 mA diode capacitance PESD3V3L4UG PESD5V0L4UG VR = 0 V; f = 1 MHz − 22 28 pF VR = 5 V; f = 1 MHz − 12 17 pF VR = 0 V; f = 1 MHz − 16 19 pF VR = 5 V; f = 1 MHz − 8 11 pF Notes 1. Non-repetitive current pulse 8 × 20 ms exponentially decay waveform; see Fig.5. 2. Between any of pins 1, 3, 4 or 5 and pin 2. 2004 Mar 23 4 Philips Semiconductors Product specification Low capacitance quadruple ESD protection diode array in SOT353 package MCE657 26 Cd PESDxL4UG series MCE658 10 handbook, halfpage handbook, halfpage (pF) IZSM 22 (A) 18 PESD3V3L4UG 1 PESD3V3L4UG 14 PESD5V0L4UG PESD5V0L4UG 10 10−1 10−2 6 1 0 Fig.2 2 3 4 VR (V) 5 Diode capacitance as a function of reverse voltage; typical values. Fig.3 MCE659 102 handbook, halfpage 10−1 1 tp (ms) 10 Maximum non-repetitive peak reverse current as a function of pulse time. MLE218 120 handbook, halfpage Ipp (%) PZSM 100 % Ipp; 8 µs (W) 80 e−t PESD3V3L4UG 10 50 % Ipp; 20 µs PESD5V0L4UG 40 1 10−2 Fig.4 10−1 1 tp (ms) 0 10 0 Maximum non-repetitive peak reverse power dissipation as a function of pulse duration (square pulse). 2004 Mar 23 Fig.5 5 10 20 30 t (µs) 40 8/20 µs pulse waveform according to IEC 61000-4-5. Philips Semiconductors Product specification Low capacitance quadruple ESD protection diode array in SOT353 package ESD TESTER RZ 450 Ω RG 223/U 50 Ω coax CZ PESDxL4UG series DIGITIZING OSCILLOSCOPE 10× ATTENUATOR 50 Ω note 1 D.U.T.: PESDxL4UG IEC 61000-4-2 network CZ = 150 pF; RZ = 330 Ω Note 1: attenuator is only used for open socket high voltage measurements vertical scale = 200 V/div horizontal scale = 50 ns/div vertical scale = 5 V/div horizontal scale = 50 ns/div GND2 PESD5V0L4UG PESD3V3L4UG GND GND1 unclamped +1 kV ESD voltage waveform (IEC 61000-4-2 network) clamped +1 kV ESD voltage waveform (IEC 61000-4-2 network) GND GND vertical scale = 200 V/div horizontal scale = 50 ns/div vertical scale = 5 V/div horizontal scale = 50 ns/div unclamped +1 kV ESD voltage waveform (IEC 61000-4-2 network) clamped −1 kV ESD voltage waveform (IEC 61000-4-2 network) Fig.6 ESD clamping test set-up and waveforms. 2004 Mar 23 6 mce656 Philips Semiconductors Product specification Low capacitance quadruple ESD protection diode array in SOT353 package PESDxL4UG series PACKAGE OUTLINE Plastic surface mounted package; 5 leads SOT353 D E B y X A HE 5 v M A 4 Q A A1 1 2 e1 3 bp c Lp w M B e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max bp c D E (2) e e1 HE Lp Q v w y mm 1.1 0.8 0.1 0.30 0.20 0.25 0.10 2.2 1.8 1.35 1.15 1.3 0.65 2.2 2.0 0.45 0.15 0.25 0.15 0.2 0.2 0.1 OUTLINE VERSION SOT353 2004 Mar 23 REFERENCES IEC JEDEC EIAJ SC-88A 7 EUROPEAN PROJECTION ISSUE DATE 97-02-28 Philips Semiconductors Product specification Low capacitance quadruple ESD protection diode array in SOT353 package PESDxL4UG series DATA SHEET STATUS LEVEL DATA SHEET STATUS(1) PRODUCT STATUS(2)(3) Development DEFINITION I Objective data II Preliminary data Qualification This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. III Product data This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Production This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. Notes 1. Please consult the most recently issued data sheet before initiating or completing a design. 2. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. 3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. DEFINITIONS DISCLAIMERS Short-form specification The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Life support applications These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Limiting values definition Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Right to make changes Philips Semiconductors reserves the right to make changes in the products including circuits, standard cells, and/or software described or contained herein in order to improve design and/or performance. When the product is in full production (status ‘Production’), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. Application information Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. 2004 Mar 23 8 Philips Semiconductors – a worldwide company Contact information For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825 For sales offices addresses send e-mail to: [email protected]. SCA76 © Koninklijke Philips Electronics N.V. 2004 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands R76/01/pp9 Date of release: 2004 Mar 23 Document order number: 9397 750 12226