MAAM-011109 Wideband Amplifier 10 MHz - 40 GHz Rev. V1 Features Functional Schematic 13 dB Gain 50 Ω Input/Output Match +18 dBm Output Power +5 V DC, 190 mA Lead-Free 5 mm 9-lead LGA Package RoHS* Compliant and 260°C Reflow Compatible Description The MAAM-011109 is an easy-to-use, wideband amplifier that operates from 10 MHz - 40 GHz. The device features 13 dB gain and +18 dBm of output power. Matching is 50 Ω with typical return loss better than 15 dB. This amplifier requires dual DC supplies: 5 V (190 mA) and a low current –5 V (<1 mA). The MAAM-011109 integrates an ultra-broadband bias choke, DC blocking and bypass capacitors. Other features include a gate bias adjust pin to change current setting for power or temperature, a gain trim control pin that allows 15 dB of gain control (0 to -1V), and a temperature compensated detector pin that provides a DC voltage in relation to output power. The MAAM-011109 is ideally suited for any application that requires 50 Ω gain from 10 MHz to 40 GHz. It is useful in applications where the incoming signal varies over a broad bandwidth such as laboratory, instrumentation, and defense applications. This device is housed in a leadless 5 X 5 X 1.3 mm package that can be handled and placed with standard pick and place assembly equipment. The package base is a two layer laminate with overmold fully compatible with PCB environment and wash conditions. The module includes a GaAs MMIC that is fully passivated for performance and reliability. Pin Configuration Pin No. Pin Name Function 1 RFIN RF Input 2 VE -5 V Supply 3 NC No Connection 4 VG Gate Adjust (optional) 5 RFOUT RF Output 6 VD +5 V Supply 7 BC Vd Bypass (optional) No Connection 8 VDET Power Detector 9 Vc 10 Gain Control 3 Paddle Ground 3. The exposed pad centered on the package bottom must be connected to RF and DC ground. Ordering Information1,2 1 Part Number Package MAAM-011109 bulk quantity MAAM-011109-TR1000 1000 piece reel MAAM-011109-001SMB Sample board * Restrictions on Hazardous Substances, European Union Directive 2002/95/EC. 1. Reference Application Note M513 for reel size information. 2. All sample boards include 3 loose parts. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macomtech.com for additional data sheets and product information. • North America Tel: 800.366.2266 / Fax: 978.366.2266 • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 MAAM-011109 Wideband Amplifier 10 MHz - 40 GHz Rev. V1 Electrical Specifications: TA = +25C, VD = +5 V, VE = -5 V, VC = Open, ZIN = ZOUT = 50 Ω Parameter Test Conditions Units Min. Typ. Max. Gain 0.1 GHz 2 GHz 12 GHz 20 GHz 32 GHz 40 GHz dB — 11.0 10.0 10.0 8.0 — 12.0 13.0 12.0 11.5 11.0 8.0 — Isolation 0.01 - 40 GHz dB — 22 — Input Return Loss 0.01 - 40 GHz dB — 13 — Output Return Loss 0.01 - 40 GHz dB — 9 — Noise Figure 0.01 - 40 GHz dB — 3.5 — P1dB 0.1 GHz 10 GHz 40 GHz dBm — +18 +17 +13 — Output IP3 0.1 GHz 10 GHz 40 GHz dBm — +26 +24 +16 — Bias Current VD = +5 V, VE = -5 V mA — 170 — Absolute Maximum Ratings4,5,6 Parameter Absolute Max. Input Power +17 dBm Drain Supply Voltage 7 +8 Volts Junction Temperature +150°C Operating Temperature -40°C to +85°C Storage Temperature -65°C to +150°C 4. Exceeding any one or combination of these limits may cause permanent damage to this device. 5. M/A-COM Technology Solutions does not recommend sustained operation near these survivability limits. 6. Operating at nominal conditions with TJ ≤ 150°C will ensure MTTF > 1 x 106 hours. 7. Junction Temperature (TJ) = TC + ӨJC * ((V * I) - (POUT - PIN)) Typical thermal resistance (ӨJC) = 21°C/W a) For TC = 25°C, TJ = 43°C @ 5 V, 190 mA, POUT = 20 dBm, PIN = 7 dBm b) For TC = 85°C, TJ = 103°C @ 5 V, 190 mA, POUT = 20 dBm, PIN = 7 dBm Handling Procedures Please observe the following precautions to avoid damage: Static Sensitivity Gallium Arsenide Integrated Circuits are sensitive to electrostatic discharge (ESD) and can be damaged by static electricity. Proper ESD control techniques should be used when handling these Class 1B devices. 2 M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macomtech.com for additional data sheets and product information. • North America Tel: 800.366.2266 / Fax: 978.366.2266 • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 MAAM-011109 Wideband Amplifier 10 MHz - 40 GHz Rev. V1 Application Information for DC & pins Application Schematic 9 8 7 For proper MAAM-011109 operation a DC voltage must be applied at the VE (-5V) and VD (+5V) pins in that order. The optional VG pin maybe used to override the automatic VE bias network to hard set the gate. Adjusting VG from -0.2 V to -0.6 V will change the quiescent current. If VG is used, VE should be left unconnected. 6 5 1 The VC pin is typically left unconnected unless gain control or output power limiting is desired. Please refer to the “Variable Gain/Limiting” section for detailed usage. 2 4 Paddle The VD pin should be bypassed with at least 0.1 µF for stability. For operation below 100 MHz a ferrite bead (Murata BLM18BB471) must be inserted between the VD pin and bypass capacitor. The VG and VC pins must also be bypassed with a 0.1 µF capacitor if operating below 100 MHz. Recommended PCB Layout The VDET pin is typically left unconnected unless a voltage reference is desired that is correlated to the output power. Please refer to the “Internal Detector” section for detailed usage. The BC pin is typically left unconnected unless gain bandwidth and shape change is desired. Please refer to an application note on this pin. The input and output pins are internally DC blocked. No more than +/- 12 V should ever be present on these RF only pins. Parts List Component Value Package C1 .22 µF 0201 L1 470 Ω 0603 The backside paddle of the MAAM-011109 should be connected to ground with as many vias as possible to maximize high frequency performance, thermal dissipation, and stability. 3 M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macomtech.com for additional data sheets and product information. • North America Tel: 800.366.2266 / Fax: 978.366.2266 • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 MAAM-011109 Wideband Amplifier 10 MHz - 40 GHz Rev. V1 Typical Performance Curves over Temperature Noise Figure Gain 15 20 15 +25°C -40°C +85°C 10 10 0 5 +25°C -40°C +85°C 5 0 10 20 30 40 0 0 10 20 40 30 40 30 40 Output Return Loss Input Return Loss 0 0 +25°C -40°C +85°C -10 -10 -20 -20 -30 30 Frequency (GHz) Frequency (GHz) 0 10 20 30 40 -30 +25°C -40°C +85°C 0 10 20 Frequency (GHz) Frequency (GHz) Output IP3 Output P1dB 30 30 +25°C -40°C +85°C 20 20 10 10 0 0 10 20 30 Frequency (GHz) 40 0 +25°C -40°C +85°C 0 10 20 Frequency (GHz) 4 M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macomtech.com for additional data sheets and product information. • North America Tel: 800.366.2266 / Fax: 978.366.2266 • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 MAAM-011109 Wideband Amplifier 10 MHz - 40 GHz Rev. V1 Typical Performance Curves vs. Voltage and Current Noise Figure Gain 20 15 3.3 V, 150 mA 3.3 V, 190 mA 5 V, 150 mA 5 V, 190 mA 15 10 10 0 5 3.3 V, 150 mA 3.3 V, 190 mA 5 V, 150 mA 5 V, 190 mA 5 0 10 20 30 40 0 0 10 Frequency (GHz) Input Return Loss 30 40 30 40 30 40 Output Return Loss 0 0 3.3 V, 150 mA 3.3 V, 190 mA 5 V, 150 mA 5 V, 190 mA -10 -10 -20 -30 20 Frequency (GHz) -20 0 10 20 30 40 -30 3.3 V, 150 mA 3.3 V, 190 mA 5 V, 150 mA 5 V, 190 mA 0 10 Frequency (GHz) 20 Frequency (GHz) Output IP3 Output P1dB 30 30 3.3 V, 150 mA 3.3 V, 190 mA 5 V, 150 mA 5 V, 190 mA 20 20 10 10 0 0 10 20 30 Frequency (GHz) 40 0 3.3 V, 150 mA 3.3 V, 190 mA 5 V, 150 mA 5 V, 190 mA 0 10 20 Frequency (GHz) 5 M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macomtech.com for additional data sheets and product information. • North America Tel: 800.366.2266 / Fax: 978.366.2266 • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 MAAM-011109 Wideband Amplifier 10 MHz - 40 GHz Rev. V1 Typical Performance Curves Gain vs. Frequency, VC = -0.9 to 1.1 V Isolation 20 0 +25°C -40°C +85°C -10 10 -20 0 -30 -40 -10 -50 -60 0 10 20 30 40 -20 0 10 Stability Factor 25 8 20 6 15 4 10 2 5 0 30 40 30 40 Output Saturated Power 10 0 20 Frequency (GHz) Frequency (GHz) 10 20 30 40 0 0 10 20 Frequency (GHz) Frequency (GHz) Low Frequency Response Gain @ 5 GHz vs. Control Voltage 20 20 10 10 0 S21 S11 S22 0 -10 -10 -20 -1.2 -20 -0.6 0 0.6 Voltage (V) 1.2 -30 0.00 0.05 0.10 0.15 Frequency (GHz) 6 M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macomtech.com for additional data sheets and product information. • North America Tel: 800.366.2266 / Fax: 978.366.2266 • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 0.20 MAAM-011109 Wideband Amplifier 10 MHz - 40 GHz Rev. V1 Typical Performance Curves VDET vs. Output Power @ 2 GHz VDET vs. Output Power 4000 4000 2 GHz 10 GHz 25 GHz 3500 3000 3000 2500 2500 2000 -10 -5 +25°C -40°C +85°C 3500 0 5 10 15 20 25 2000 -10 -5 0 Output Power (dBm) 300 300 250 250 200 200 150 150 100 100 50 50 -1.4 -1.2 10 15 20 25 Current vs. Control Voltage Current vs. Gate Voltage 0 -1.6 5 Output Power (dBm) -1.0 -0.8 -0.6 Voltage (V ) G -0.4 -0.2 0 -1.0 3.3 V 5V -0.5 0.0 0.5 Voltage (V ) C 7 M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macomtech.com for additional data sheets and product information. • North America Tel: 800.366.2266 / Fax: 978.366.2266 • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 1.0 MAAM-011109 Wideband Amplifier 10 MHz - 40 GHz Rev. V1 Application Details Bandwidth, Power, Noise and Linearity VD and ID affect both the bandwidth (response flatness), power available, noise figure, and linearity of the amplifier. Higher currents and lower VD increase high frequency gain but reduce the P1dB and the OIP3 numbers. If the device is driven to P1dB and on into PSAT the current, ID, will naturally reduce. The device will return to the quiescent ID value once the input power is reduced. Finally, higher ID and VD values increase the device noise figure. Temperature also affects the bandwidth, gain and noise figure of the device. Lower temperatures increase gain and bandwidth and reduce the noise figure. Temperature has little effect on power and linearity. Broadband Amplifier Applications The MAAM-011109 also has a low enough noise figure to be used in instrumentation front ends and buffer applications. It also has very flat response with low group delay distortion so it can be used in pulse applications. For higher gains multiple amplifiers may be cascaded. It also makes a very good low cost optical driver capable of delivering to 8 V p-p into 50 Ω. Variable Gain/Limiting Applications The gain of the MAAM-011109 can be easily controlled with the VC pin. The gain reduction is almost linear with VC between 0.1 V to -0.8 V. Below -0.7 V internal ESD protection diodes will draw increasing current (50 mA at -1.0 V). The VC pin should not be driven below -1 V or above 1.2 V. The nominal open circuit voltage at the VC pin is 0.8 V. Reducing VC below 0.8 V will also reduce ID. Gain, P1dB, and PSAT will all be reduced as VC is lowered. Limiting applications and zero crossing adjustment can be done by adjusting the VG and VC pins together. Internal Detector The VDET pin is connected to an internal diode detector. This pin should be connected to a high impedance (>50 kΩ) or left unconnected. The detector is internally connected so that it responds predominately to the power generated by the amplifier. The detector has a low pass characteristic which rolls off gradually above 2 GHz. The detector is temperature compensated. Finally, even with zero output power the detector has a DC output voltage proportional to VD (nominally 2.8 V for VD = 5 V). Lead-Free 5 mm 9-lead LGA All Dimensions are in mm † Reference Application Note S2083 for lead-free solder reflow recommendations. Meets JEDEC moisture sensitivity level 3 requirements. Plating is gold over nickel. 8 M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macomtech.com for additional data sheets and product information. • North America Tel: 800.366.2266 / Fax: 978.366.2266 • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298