MAAP-015030 Power Amplifier, 13 W 8.5 - 11.75 GHz Rev. V2 Features 12 W X-Band Power Amplifier 21 dB Large Signal Gain 41 dBm Saturated Pulsed Output Power 40% Power Added Efficiency On Chip Gate Bias Circuit 100% On-wafer DC & RF Power Tested 100% Visual Inspection to MIL-STD-833 Bare Die Functional Schematic VB1 VB2 VG2 4 VG1 RFIN 7 5 1 V D1 V D2 8 9 6 2 Bias 11 22 RFOUT Description The MAAP-015030 two stage 8.5 - 11.75 GHz GaAs MMIC power amplifier has a saturated pulsed output power of 41 dBm and a large signal gain of 21 dB. The power amplifier can be biased using a direct gate voltage or using an on chip gate bias circuit. This device is well suited for communication and radar applications. VG1 Package MAAP-015030-DIE Die in Vacuum release gel pack MAAP-015030-DIEEV1 Direct gate bias sample board MAAP-015030-DIEEV2 On chip gate bias sample board 20 Bias 16 18 17 13 14 15 VB1 VB2 VG2 V D1 V D2 Pad Configuration Pad No. Function Pad No. Function 1 VG1 12 GND 2 Bias Circuit GND 13 VD2 3 No Connection 14 VD1 4 VB1 15 VG2 5 VB2 16 Bias Circuit GND 6 Bias Circuit GND 17 VB2 7 VG2 18 VB1 8 VD1 19 GND 9 VD2 20 Bias Circuit GND 10 GND 21 VG1 11 RFOUT 22 RFIN Ordering Information Part Number 21 * Restrictions on Hazardous Substances, European Union Directive 2002/95/EC. 1 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macomtech.com for additional data sheets and product information. • North America Tel: 800.366.2266 / Fax: 978.366.2266 • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 MAAP-015030 Power Amplifier, 13 W 8.5 - 11.75 GHz Rev. V2 Electrical Specifications: Freq. = 8.5 - 11.5 GHz, TA = +25°C, Duty Cycle = 5%, PIN = 20 dBm, VG = -0.9V Parameter Units Min. Typ. Max. Gain (Large Signal) (8.5 - 11.5 GHz) Gain (Large Signal) (11.5 - 11.75 GHz) dB 20 19 21 — Gain dB — 25 — Gain Flatness dB — 1 — Input Return Loss dB — 12 — Output Return Loss dB — 10 — Saturated Output Power (8.5 - 11.5 GHz) Saturated Output Power (11.5 - 11.75 GHz) dBm 40 39 41 — Power Added Efficiency 8.5 - 9.0 GHz 9.0 - 10.0 GHz 10.0 - 11.75 GHz % — Drain Bias Voltage V — 8.0 — Drain Current A — 5 5.5 35 40 40 — Absolute Maximum Ratings1,2 Parameter Absolute Maximum Input Power +23 dBm Drain Voltage +8.5 V Gate Voltage -2.0 V < VG < -0.7 V Bias Voltage -6.5 V < VB < -4.5 V Drain Current < 6.0 A Gate Current < 30 mA Operating Temperature Junction Temperature 3,4 -40°C to +85°C +175°C Handling Procedures Please observe the following precautions to avoid damage: Static Sensitivity Gallium Arsenide Integrated Circuits are sensitive to electrostatic discharge (ESD) and can be damaged by static electricity. Proper ESD control techniques should be used when handling these devices. 1. Exceeding any one or combination of these limits may cause permanent damage to this device. 2. MACOM does not recommend sustained operation near these survivability limits. 3. Operating at nominal conditions with TJ ≤ +175°C will ensure MTTF > 1 x 106 hours. 4. Junction Temperature (TJ) = TA + Өjc * (V * I) Typical thermal resistance (Өjc) = 5.7°C/W. a) For TA = 25°C, TJ = 175°C @ 8 V, 3.29 A b) For TA = 85°C, TJ = 175°C @ 8 V, 1.97 A 2 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macomtech.com for additional data sheets and product information. • North America Tel: 800.366.2266 / Fax: 978.366.2266 • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 MAAP-015030 Power Amplifier, 13 W 8.5 - 11.75 GHz Bonding Diagram - On Chip Bias5 Rev. V2 Bonding Diagram - Direct Gate Bias5 5. Components C1 - C8 are all 100 pF chips. MMIC Bare Die 3 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macomtech.com for additional data sheets and product information. • North America Tel: 800.366.2266 / Fax: 978.366.2266 • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 MAAP-015030 Power Amplifier, 13 W 8.5 - 11.75 GHz Rev. V2 Typical Performance Curves over Voltage Reverse Isolation vs. Frequency Gain vs. Frequency -20 30 VG = 0.8 V VG = 0.9 V VG = 1.0 V -30 25 -40 -50 20 10 -60 VG = 0.8 V VG = 0.9 V VG = 1.0 V 15 8 9 10 11 -70 12 -80 8 9 11 12 Frequency (GHz) Frequency (GHz) Output Return Loss vs. Frequency Input Return Loss vs. Frequency 0 0 VG = 0.8 V VG = 0.9 V VG = 1.0 V -5 -10 -15 -15 -20 8 9 10 11 Frequency (GHz) VG = 0.8 V VG = 0.9 V VG = 1.0 V -5 -10 -20 10 12 8 9 10 11 Frequency (GHz) 4 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macomtech.com for additional data sheets and product information. • North America Tel: 800.366.2266 / Fax: 978.366.2266 • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 12 MAAP-015030 Power Amplifier, 13 W 8.5 - 11.75 GHz Rev. V2 Typical Performance Curves over Voltage Gain vs. Frequency Output Power vs. Frequency 30 50 25 45 20 40 VG = 0.8 V VG = 0.9 V VG = 1.0 V 15 10 8 9 10 11 VG = 0.8 V VG = 0.9 V VG = 1.0 V 35 12 30 8 9 6 60 5 48 4 36 3 24 VG = 0.8 V VG = 0.9 V VG = 1.0 V 2 8 9 11 12 PAE vs. Frequency Drain Current vs. Frequency 1 10 Frequency (GHz) Frequency (GHz) 10 11 Frequency (GHz) VG = 0.8 V VG = 0.9 V VG = 1.0 V 12 12 0 8 9 10 11 Frequency (GHz) 5 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macomtech.com for additional data sheets and product information. • North America Tel: 800.366.2266 / Fax: 978.366.2266 • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 12 MAAP-015030 Power Amplifier, 13 W 8.5 - 11.75 GHz Rev. V2 Typical Performance Curves over Frequency Output Power vs. Input Power Gain vs. Input Power 30 45 25 40 20 35 8.5 GHz 9.0 GHz 9.5 GHz 10.0 GHz 10.5 GHz 11.0 GHz 11.5 GHz 11.75 GHz 15 10 0 8.5 GHz 9.0 GHz 9.5 GHz 10.0 GHz 10.5 GHz 11.0 GHz 11.5 GHz 11.75 GHz 30 4 8 12 16 20 25 0 4 8 Input Power (dBm) 16 0.0040 5 8.5 GHz 9.0 GHz 9.5 GHz 10.0 GHz 10.5 GHz 11.0 GHz 11.5 GHz 11.75 GHz 4 0.0000 2 -0.0020 -0.0040 0 4 8.5 GHz 9.0 GHz 9.5 GHz 10.0 GHz 10.5 GHz 11.0 GHz 11.5 GHz 11.75 GHz 0.0020 3 8 12 16 20 0 4 8 12 16 Input Power (dBm) Input Power (dBm) PAE vs. Input Power 60 50 8.5 GHz 9.0 GHz 9.5 GHz 10.0 GHz 10.5 GHz 11.0 GHz 11.5 GHz 11.75 GHz 40 30 20 10 0 20 Gate Current vs. Input Power Drain Current vs. Input Power 1 12 Input Power (dBm) 0 4 8 12 16 20 Input Power (dBm) 6 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macomtech.com for additional data sheets and product information. • North America Tel: 800.366.2266 / Fax: 978.366.2266 • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 20 MAAP-015030 Power Amplifier, 13 W 8.5 - 11.75 GHz Rev. V2 Typical Performance Curves over Temperature: PIN = 19.5 dBm Gain vs. Frequency Output Power vs. Frequency 30 50 25 45 20 40 -40°C -20°C +20°C +60°C +80°C 15 10 8 9 10 11 -40°C -20°C +20°C +60°C +80°C 35 12 30 8 9 10 11 12 Frequency (GHz) Frequency (GHz) PAE vs. Frequency Drain Current vs. Frequency 6 60 -40°C -20°C +20°C +60°C +80°C 5 50 40 4 30 3 20 2 1 -40°C -20°C +20°C +60°C +80°C 10 8 9 10 11 Frequency (GHz) 12 0 8 9 10 11 Frequency (GHz) 7 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macomtech.com for additional data sheets and product information. • North America Tel: 800.366.2266 / Fax: 978.366.2266 • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 12 MAAP-015030 Power Amplifier, 13 W 8.5 - 11.75 GHz Rev. V2 Typical Performance Curves over Temperature Gain vs. Input Power Output Power vs. Input Power 30 45 25 40 20 35 -40°C -20°C +20°C +60°C +80°C 15 10 25 0 4 -40°C -20°C +20°C +60°C +80°C 30 8 12 16 20 0 4 8 16 20 16 20 PAE vs. Input Power Drain Current vs. Input Power 5.0 60 4.5 50 -40°C -20°C +20°C +60°C +80°C 4.0 30 3.0 20 2.5 10 0 4 -40°C -20°C +20°C +60°C +80°C 40 3.5 2.0 12 Input Power (dBm) Input Power (dBm) 8 12 Input Power (dBm) 16 20 0 0 4 8 12 Input Power (dBm) 8 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macomtech.com for additional data sheets and product information. • North America Tel: 800.366.2266 / Fax: 978.366.2266 • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 MAAP-015030 Power Amplifier, 13 W 8.5 - 11.75 GHz Rev. V2 Applications Section Application Notes Note 1 - Biasing The gate biasing is applied in one of the following: 1. Direct Gate Bias:- VG1 & VG2 provide the direct gate bias input to the 2 MMIC stages. This method of biasing allows the user to control the total drain current without the scaling factor provided by the bias circuit . It is recommended that the gate voltage is supplied by both sides of the Die. Optimum performance can be achieved with a -0.9 V operation. 2. Bias Circuit Biasing:- Applying -5V to VB1 & VB2 will typically draw 2A with no further adjustment necessary. Wafer lot variation may result in some devices experiencing higher or lower drain currents than the typical 2 A. It is necessary to connect the Bias Circuit Ground (Pad 2,6,16,20) to ground in order for this bias circuit to function correctly. It is recommended that the bias circuits on both sides of the PA are used. Note 3 - Decoupling Circuits Each bias pad, VG or VB and the VD1, VD2 must have a decoupling capacitor of 100 pF as close to the device as possible, as is shown in the bonding diagrams. In the case where the bias circuit is used the additional bond wire to ground must be made as short as possible. Note 4 - Pulse Operation The performance of the MAAP-015030-BD is characterized under pulsed conditions with a duty cycle of 5% consisting of a pulse width of 5 µS applied to the drain. Under pulsed conditions the gate is constantly biased using either the on chip bias circuit or using a gate voltage directly applied to the PA. It is recommended that the die is mounted with an adequate thermal solution. Note 5 - CW Operation The PA is only recommended for CW operation at reduced drain voltages. Note 2 - Bias Sequence When switching on the PA, In each case, the gate bias must be applied before the drain voltage is applied. Both the VD1 and VD2 should be biased from the top and bottom sides of the die. 9 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macomtech.com for additional data sheets and product information. • North America Tel: 800.366.2266 / Fax: 978.366.2266 • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 MAAP-015030 Power Amplifier, 13 W 8.5 - 11.75 GHz Rev. V2 Applications Section Handling and Assembly Die Attachment This product is 0.100 mm (0.004") thick and has vias through to the backside to enable grounding to the circuit. Microstrip substrates should be brought as close to the die as possible. The mounting surface should be clean and flat. If using conductive epoxy, recommended epoxies are Tanaka TS3332LD, Die Mat DM6030HK or DM6030HK-Pt cured in a nitrogen atmosphere per manufacturer's cure schedule. Apply epoxy sparingly to avoid getting any on to the top surface of the die. An epoxy fillet should be visible around the total die periphery. For additional information please see the MACOM "Epoxy Specifications for Bare Die" application note. If eutectic mounting is preferred, then a flux-less gold-tin (AuSn) preform, approximately 0.0012 thick, placed between the die and the attachment surface should be used. A die bonder that utilizes a heated collet and provides scrubbing action to ensure total wetting to prevent void formation in a nitrogen atmosphere is recommended. The gold-tin eutectic (80% Au 20% Sn) has a melting point of approximately 280ºC (Note: Gold Germanium should be avoided). The work station temperature should be 310ºC +/10ºC. Exposure to these extreme temperatures should be kept to minimum. The collet should be heated, and the die pre-heated to avoid excessive thermal shock. Avoidance of air bridges and force impact are critical during placement. Wire Bonding Windows in the surface passivation above the bond pads are provided to allow wire bonding to the die's gold bond pads. The recommended wire bonding procedure uses 0.076 mm x 0.013 mm (0.003" x 0.0005") 99.99% pure gold ribbon with 0.5-2% elongation to minimize RF port bond inductance. Gold 0.025 mm (0.001") diameter wedge or ball bonds are acceptable for DC Bias connections. A lum i ni um wire s h ou l d be a v oi d ed . Thermo-compression bonding is recommended though thermo-sonic bonding may be used providing the ultrasonic content of the bond is minimized. Bond force, time and ultrasonic's are all critical parameters. Bonds should be made from the bond pads on the die to the package or substrate. All bonds should be as short as possible. 10 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macomtech.com for additional data sheets and product information. • North America Tel: 800.366.2266 / Fax: 978.366.2266 • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298