MAGX-000035-01500P GaN Wideband 15 W Pulsed Transistor in Plastic Package DC - 3.5 GHz Functional Schematic Features Rev. V2 GaN on SiC D-Mode Transistor Technology Unmatched, Ideal for Pulsed Applications 50 V Typical Bias, Class AB Common-Source Configuration Thermally-Enhanced 3 x 6 mm 14-Lead DFN MTTF = 600 years (TJ < 200°C) Halogen-Free “Green” Mold Compound RoHS* Compliant and 260°C Reflow Compatible MSL-1 Description The MAGX-000035-01500P is a GaN on SiC unmatched power device offering the widest RF frequency capability, most reliable high voltage operation, lowest overall power transistor size, cost and weight in a “TRUE SMT”TM plastic-packaging technology. Use of an internal stress buffer technology allows reliable operation at junction temperatures up to 200°C. The small package size and excellent RF performance make it an ideal replacement for costly flanged or metal-backed module components. Ordering Information Pin Configuration2 Pin No. Function Pin No. Function 1 No Connection 8 No Connection 2 No Connection 9 No Connection 3 VGG/RFIN 10 No Connection 4 VGG/RFIN 11 VDD/RFOUT 5 VGG/RFIN 12 No Connection 6 No Connection 13 No Connection 7 No Connection 14 No Connection 15 Paddle3 1 Part Number Package MAGX-000035-01500P Bulk Packaging MAGX-000035-PB1PPR Sample Board 1. Reference Application Note M513 for reel size information. 2. M/A-COM Technology Solutions recommends connecting unused package pins to ground. 3. The exposed pad centered on the package bottom must be connected to RF and DC ground. * Restrictions on Hazardous Substances, European Union Directive 2002/95/EC. 1 M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macomtech.com for additional data sheets and product information. • North America Tel: 800.366.2266 / Fax: 978.366.2266 • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 MAGX-000035-01500P GaN Wideband 15 W Pulsed Transistor in Plastic Package DC - 3.5 GHz Rev. V2 Typical Performance4: VDD = 50 V, IDQ = 35 mA, TA = 25°C Parameter 30 MHz 1 GHz 2.5 GHz 3.5 GHz Units Gain 25 23 17 14 dB Saturated Power (PSAT) 18 16.5 15 14 W Power Gain at PSAT 22 18 14 11 dB PAE @ PSAT 75 68 60 55 % 4. Typical RF performance measured in M/A-COM Technology Solutions RF evaluation boards. See recommended tuning solutions on page 4. Electrical Specifications: Freq. = 1.6 GHz, TA = 25°C, VDD = +50 V, Z0 = 50 Ω Parameter Test Conditions Symbol Min. Typ. Max. Units CW Output Power (P2.5 dB) VDD = 36 V, IDQ = 35 mA POUT - 7 - W Pulsed Output Power (P2.5 dB) 1 ms and 10% Duty Cycle VDD = 50 V, IDQ = 35 mA POUT 12.5 17 - W Pulsed Power Gain (P2.5 dB) VDD = 50 V, IDQ = 35 mA GP 17 19.5 - dB Pulsed Drain Efficiency (P2.5 dB) VDD = 50 V, IDQ = 35 mA ηD 55 65 - % Load Mismatch Stability (P2.5 dB) VDD = 50 V, IDQ = 35 mA VSWR-S - 5:1 - - Load Mismatch Tolerance (P2.5 dB) VDD = 50 V, IDQ = 35 mA VSWR-T - 10:1 - - Test Conditions Symbol Min. Typ. Max. Units Drain-Source Leakage Current VGS = -8 V, VDS = 175 V IDS - - 1.0 mA Gate Threshold Voltage VDS = 5 V, ID = 2 mA VGS (th) -5 -3 -2 V Forward Transconductance VDS = 5 V, ID = 500 mA GM 0.35 - - S Input Capacitance VDS = 0 V, VGS = -8 V, F = 1 MHz CISS - 4.2 - pF Output Capacitance VDS = 50 V, VGS = -8 V, F = 1 MHz COSS - 1.8 - pF Reverse Transfer Capacitance VDS = 50 V, VGS = -8 V, F = 1 MHz CRSS - 0.2 - pF RF FUNCTIONAL TESTS Electrical Characteristics: TA = 25°C Parameter DC CHARACTERISTICS DYNAMIC CHARACTERISTICS 2 M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macomtech.com for additional data sheets and product information. • North America Tel: 800.366.2266 / Fax: 978.366.2266 • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 MAGX-000035-01500P GaN Wideband 15 W Pulsed Transistor in Plastic Package DC - 3.5 GHz Rev. V2 Absolute Maximum Ratings 5,6,7,8,9 Parameter Absolute Max. Input Power POUT - GP + 2.5 dBm Drain Supply Voltage, VDD +65 V Gate Supply Voltage, VGG -8 V to 0 V Supply Current, IDD 800 mA Power Dissipation, CW @ 85ºC 13 W Power Dissipation (PAVG), Pulsed @ 85°C 17 W Junction Temperature10 200°C Operating Temperature -40°C to +95°C Storage Temperature -65°C to +150°C 5. 6. 7. 8. 9. Exceeding any one or combination of these limits may cause permanent damage to this device. M/A-COM Technology Solutions does not recommend sustained operation near these survivability limits. For saturated performance it is recommended that the sum of (3 * VDD + abs (VGG)) < 175 V. CW operation at VDD voltages above 36 V is not recommended. Operating at nominal conditions with TJ ≤ 200°C will ensure MTTF > 1 x 106 hours. Junction temperature directly affects device MTTF and should be kept as low as possible to maximize lifetime. 10. Junction Temperature (TJ) = TC + ӨJC * ((V * I) - (POUT - PIN)) Typical CW thermal resistance (ӨJC) = 15.7°C/W a) For TC = 83°C, TJ = 200°C @ 36 V, 398 mA, POUT = 7.2 W, PIN = 0.22 W Typical transient thermal resistances: b) 300 µs pulse, 10% duty cycle, ӨJC = 5.33°C/W For TC = 83°C, TJ = 170°C @ 50 V, 603 mA, POUT = 14.3 W, PIN = 0.41 W c) 1 ms pulse, 10% duty cycle, ӨJC = 5.85°C/W For TC = 83°C, TJ = 172°C @ 50 V, 576 mA, POUT = 14.0 W, PIN = 0.41 W d) 1 ms pulse, 20% duty cycle, ӨJC = 6.81°C/W For TC = 83°C, TJ = 186°C @ 50 V, 570 mA, POUT = 13.8 W, PIN = 0.41 W 3 M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macomtech.com for additional data sheets and product information. • North America Tel: 800.366.2266 / Fax: 978.366.2266 • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 MAGX-000035-01500P GaN Wideband 15 W Pulsed Transistor in Plastic Package DC - 3.5 GHz Rev. V2 Evaluation Board Details and Recommended Tuning Solutions Parts measured on evaluation board (8-mils thick RO4003C). Electrical and thermal ground is provided using copper-filled via hole array (not pictured), and evaluation board is mounted to a metal plate. Matching is provided using lumped elements as shown at left. Recommended tuning solutions for 3 frequency ranges are detailed in the parts list below. Bias Sequencing Turning the device ON 1. Set VG to the pinch-off (VP), typically -5 V. 2. Turn on VD to nominal voltage (50 V). 3. Increase VGS until the IDS current is reached. 4. Apply RF power to desired level. Turning the device OFF 1. Turn the RF power off. 2. Decrease VG down to VP. 3. Decrease VD down to 0 V. 4. Turn off VG. Parts List (N/A = not applicable for this tuning solution) Part 4 Frequency = 1.6 GHz Frequency = 2.2 - 2.5 GHz Frequency = 2.6 - 3.6 GHz C1 0402 27 pF, ±5%, 200 V, ATC 0402 18 pF, ±5%, 200 V, ATC 0402 18 pF, ±5%, 200 V, ATC C2 0603, 5.6 pF, ±0.1 pF, 250 V, ATC 0402, 2.2 pF, ±0.1pF, 200 V, ATC 0402, 1.2 pF, ±0.1 pF, 200 V, ATC C3 0603, 18 pF, ±10%, 250 V, ATC N/A N/A 0805, 1000 pF, 100 V, 5%, AVX C4 0805, 1000 pF, 100 V, 5%, AVX 0805, 1000 pF, 100 V, 5%, AVX C5 0505, 2.2 pF, ±5%, 250 V, ATC (Vertical) 0603, 0.8 pF, ±0.1 pF, 250 V, ATC N/A C6 N/A 0603, 1.5 pF, ±0.1 pF, 250 V, ATC 0402, 1.0 pF, ±0.1 pF, 200 V, ATC C7 0505, 36 pF, ±5%, 250 V, ATC (Vertical) 0402 18 pF, ±5%, 200 V, ATC 0402 18 pF, ±5%, 200 V, ATC C8 0505, 18 pF, ±5%, 250 V, ATC 0402 10 pF, ±5%, 200 V, ATC N/A C9 0805, 1000 pF, 100 V, 5%, AVX 0805, 1000 pF, 100 V, 5%, AVX 0805, 1000pF, 100V, 5%, AVX C10 1210, 1 µF, 100 V, 20%, ATC 1210, 1 µF, 100 V, 20%, ATC 1210, 1 µF, 100 V, 20%, ATC C11 N/A 0402, 3.9 pF, ±0.1 pF, 200 V, ATC 0402, 2.0 pF, ±0.1 pF, 200 V, ATC C12 N/A 0402, 3.9 pF, ±0.1 pF, 200 V, ATC 0402, 2.0 pF, ±0.1 pF, 200 V, ATC C13 N/A N/A 0402 10 pF, ±5%, 200 V, ATC R1 12 Ω, 0603, 5% 200 Ω, 0603, 5% 100 Ω, 0603, 5% R2 1.2 Ω, 0603, 5% 1.0 Ω, 0603, 5% 1.0 Ω, 0603, 5% R3 1.2 Ω, 0603, 5% 9.1 Ω, 0603, 5% 9.1 Ω, 0603, 5% L1 0603 HP, 5.1 nH, 5% 0402, 0.8 nH,10% Shorting tab L2 0603 HP, 24 nH, 5% 0603, 1.8 nH, 10% Shorting tab L3 N/A N/A 0603, 10nH, 10% M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macomtech.com for additional data sheets and product information. • North America Tel: 800.366.2266 / Fax: 978.366.2266 • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 MAGX-000035-01500P GaN Wideband 15 W Pulsed Transistor in Plastic Package DC - 3.5 GHz Rev. V2 Lead-Free 3x6 mm 14-Lead DFN† † Reference Application Note S2083 for lead-free solder reflow recommendations. Meets JEDEC moisture sensitivity level 1 requirements. Plating is Ni/Pd/Au. Handling Procedures Please observe the following precautions to avoid damage: Static Sensitivity Gallium Nitride Devices and Circuits are sensitive to electrostatic discharge (ESD) and can be damaged by static electricity. Proper ESD control techniques should be used when handling these Class 1B devices. 5 M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macomtech.com for additional data sheets and product information. • North America Tel: 800.366.2266 / Fax: 978.366.2266 • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 MAGX-000035-01500P GaN Wideband 15 W Pulsed Transistor in Plastic Package DC - 3.5 GHz Rev. V2 Applications Section S-Parameter Data: TA = 25°C, VDD = +50 V, IDQ = 35 mA MAGX00035_01500P_50 0. 4 0 3. 0 S(1,1) 4. MAGX00035_015000P_505.0 10.0 5.0 4.0 3.0 1.304 GHz r 0.421823 x -1.10236 -3 .0 Swp Min 0.03GHz -1.0 -0.8 .0 -2 .4 -0 .6 -0 2.0 1.0 0.8 2.699 GHz r 0.156665 x -0.525263 2 -0. 1.296 GHz r 0.0528072 x -0.265641 0.6 0.4 0 3.703 GHz r 0.105546 x -0.304886 -4 .0 -5. 0 0.2 0.2 2.699 GHz r 0.0493891 x 0.031524 S(2,2) 0.0 MAGX00035_015000P_50 1 -10.0 3.698 GHz r 0.0486879 x 0.177179 2. 0 6 0. 0.8 1.0 Swp Max 6GHz S p ar G ra p h 2 40 D B (|S ( 2 ,1 )|) M A GX 000 35_015 000P _50 D B (G M a x () ) M A GX 000 35_015 000P _50 30 D B (M S G ( )) M A GX 000 35_015 000P _50 20 10 0 -1 0 0 .0 3 2 .0 3 4 .0 3 6 F re q u e n c y ( G H z ) 6 M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macomtech.com for additional data sheets and product information. • North America Tel: 800.366.2266 / Fax: 978.366.2266 • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 MAGX-000035-01500P GaN Wideband 15 W Pulsed Transistor in Plastic Package DC - 3.5 GHz Rev. V2 Applications Section Thermal Performance: Freq. = 1.6 GHz, TC = 85°C, VDD = +50 V, IDQ = 25 mA, Z0 = 50 Ω Power (Output & Dissipated) vs. Transient Junction Temperature, Pulse Duration and Duty Cycle 220 18 Max. Transient Junction Temp. 17 200 16 180 15 160 14 140 13 120 Power Dissipation 1.6 GHz Power Output 100 12 Pulse Width (µs), Duty Cycle (%) Pulse Width, Duty Cycle 100 µs, 10% 100 µs, 20% 300 µs, 10% 300 µs, 20% 500 µs, 10% 500 µs, 20% 1000 µs, 10% 1000 µs, 20% 8000 µs, 9.2% Power Dissipation (W) 15.6 15.1 16.3 15.9 15.2 15.1 15.2 15.1 16.5 1.6 GHz POUT (W) 14.5 14.4 14.3 14 14.4 13.9 14 13.8 13.3 Max. Transient Junction Temp. (°C) 131.9 148.3 169.6 185.9 165.1 180.2 172 185.9 182 Junction temperature measured using High-Speed Transient (HST) temperature detection microscopy. 7 M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macomtech.com for additional data sheets and product information. • North America Tel: 800.366.2266 / Fax: 978.366.2266 • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 MAGX-000035-01500P GaN Wideband 15 W Pulsed Transistor in Plastic Package DC - 3.5 GHz Rev. V2 Applications Section Typical Performance Curves (reference 1.6 GHz parts list): 1.6 GHz, 1 ms Pulse, 10% Duty Cycle, VDD= +50 V, TA = 25°C, Z0 = 50 Ω Output Power vs. Input Power Gain vs. Input Power 26 20 Idq = 80 mA Idq = 35 mA 24 16 22 12 20 8 18 4 16 10 15 20 25 Input Power (dBm) 0 Idq = 80 mA Idq = 35 mA 10 15 20 Input Power (dBm) PAE vs. Input Power 70 60 50 40 Idq = 80 mA Idq = 35 mA 30 20 10 15 20 25 Input Power (dBm) 8 M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macomtech.com for additional data sheets and product information. • North America Tel: 800.366.2266 / Fax: 978.366.2266 • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 25 MAGX-000035-01500P GaN Wideband 15 W Pulsed Transistor in Plastic Package DC - 3.5 GHz Rev. V2 Applications Section Pulsed OIP3 data Pulse width 8.28 ms, Duty cycle 9% VDD = 50 V, IDQ = 70 mA, Freq = 1.62 GHz, 1 MHz spacing on tones PIN POUT per tone OIP3 (dBm) (dBm) (dBm) 8 31.1 46 9 32.0 47 10 32.9 50 11 33.7 50 12 34.5 47 Typical Performance Curves (reference 2.2 - 2.5 GHz parts list): 2.2 - 2.5 GHz, CW, VDD = 28 V, IDQ = 35 mA, TA = 25°C, Z0 = 50 Ω Output Power vs. Input Power Gain vs. Input Power 40 16 38 14 36 12 10 34 2.2 GHz 2.3 GHz 2.4 GHz 2.5 GHz 2.2 GHz 2.3 GHz 2.4 GHz 2.5 GHz 32 30 8 15 16 17 18 19 20 21 22 23 24 25 26 27 Input Power (dBm) 28 28 15 16 17 18 19 20 21 22 23 24 25 26 27 Input Power (dBm) 9 M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macomtech.com for additional data sheets and product information. • North America Tel: 800.366.2266 / Fax: 978.366.2266 • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 28 MAGX-000035-01500P GaN Wideband 15 W Pulsed Transistor in Plastic Package DC - 3.5 GHz Rev. V2 Applications Section Typical Performance Curves (reference 2.6 - 3.6 GHz parts list): 2.6 - 3.6 GHz, 3 ms Pulse, 10% Duty Cycle, VDD = 50 V, IDQ = 35 mA, TA = 25°C, Z0 = 50 Ω PSAT vs. Frequency Gain vs. Frequency 18 24 16 22 14 20 12 18 10 16 8 2.6 2.8 3.0 3.2 3.4 3.6 14 2.6 2.8 Frequency (GHz) 18 70 16 65 14 60 12 55 10 50 2.6 2.8 3.0 3.2 3.4 3.6 3.4 3.6 PAE vs. Frequency Small Signal Gain vs. Frequency 8 3.0 Frequency (GHz) 3.2 Frequency (GHz) 3.4 3.6 45 2.6 2.8 3.0 3.2 Frequency (GHz) 10 M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macomtech.com for additional data sheets and product information. • North America Tel: 800.366.2266 / Fax: 978.366.2266 • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298