SHD114544 SHD114544A SHD114544B SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 4521, REV. A POWER SCHOTTKY RECTIFIER Low Reverse Leakage Applications: Switching Power Supply Converters Free-Wheeling Diodes Polarity Protection Diode Features: Ultra Low Reverse Leakage Current Soft Reverse Recovery at Low and High Temperature Low Forward Voltage Drop Low Power Loss, High Efficiency High Surge Capacity Guard Ring for Enhanced Durability and Long Term Reliability Guaranteed Reverse Avalanche Characteristics Maximum Ratings: Characteristics Peak Inverse Voltage Max. Average Forward Current Max. Peak One Cycle NonRepetitive Surge Current Non-Repetitive Avalanche Energy Repetitive Avalanche Current Thermal Resistance Max. Junction Temperature Max. Storage Temperature Symbol VRWM IF(AV) IFSM EAS IAR RthJC TJ Tstg Condition 50% duty cycle, rectangular wave form 8.3 ms, half Sine wave (per leg) TJ = 25 C, IAS = 1.3 A, L = 40mH (per leg) IAS decay linearly to 0 in 1 s limited by TJ max VA=1.5VR Per Package - Max. 100 60 Units V A 860 A 27 mJ 1.3 A 0.7 -65 to +175 -65 to +175 C/W C C Electrical Characteristics: Characteristics Max. Forward Voltage Drop Symbol VF1 Condition Max. Units 0.87 V @ 60A, Pulse, TJ = 25 C (per leg) measured at the leads VF2 0.72 V @ 60A, Pulse, TJ = 125 C (per leg) measured at the leads Max. Reverse Current IR1 @VR = 15V, Pulse, 1 mA TJ = 25 C (per leg) IR2 @VR = 15V, Pulse, 24 mA TJ = 125 C (per leg) Max. Junction Capacitance CT 1500 pF @VR = 5 V, TC = 25 C fSIG = 1 MHz, VSIG = 50mV (p-p) (per leg) Due to the nature of the 100V Schottky devices, some degradation in trr performance at high temperatures should be expected, unlike conventional lower voltage Schottkys. © 2012 Sensitron Semiconductor 221 WEST INDUSTRY COURT DEER PARK, NY 11729-4681 PHONE (631) 586-7600 FAX (631) 242-9798 www.sensitron.com [email protected] SHD114544 SHD114544A SHD114544B SENSITRON TECHNICAL DATA DATA SHEET 4521, REV. A Mechanical Dimensions: in inches / mm .560±.020 .550±.020 (14.0±.508) .410±.010 (10.4±.254) (14.2±.508) .410±.010 (10.4±.254) .410±.010 (10.4±.254) .410±.010 (10.4±.254) .410±.010 (10.4±.254) .200±.010 (5.08 ±.254) Moly Lid .075 (1.91) Max .150±.010 (3.81±.254) .410±.010 (10.4±.254) .015±.005 (.381±.127) .020±.005 R (.508±.127 ) Copper Anode .090 (2.29) Max Alumina Ring .020±.005 R (.508±.127 ) .075 (1.91) Max Moly Lid .020±.002 (.508±.051) Moly Bas e (Cathode) Alumina Ring Alumina Ring .060±.010 (1.52±.254) Moly Anode Moly Base (Cathode) Moly .015±.002 (.381±.051) .060±.010 SHD-3 SHD-3A (1.52±.254) SHD-3B Typical Forward Characteristics Typical Reverse Characteristics 102 102 Instantaneous Reverse Current - I R (mA) 200 °C 200 °C 1 Instantaneous Forward Current - I F (A) 10 175 °C 1 10 175 °C 150 °C 100 125 °C 100 °C 10-1 75 °C -2 10 50 °C 10-3 25 °C 0 10 10-4 125 °C 0 20 40 60 80 100 Reverse Voltage - RV (V) 120 Typical Junction Capacitance Junction Capacitance - C T (pF) 25 °C 10-1 10-2 0.1 0.2 0.3 0.4 0.5 0.6 0.7 Forward Voltage Drop -FV(V) 0.8 1400 1200 1000 800 600 400 200 0 20 40 60 80 100 Reverse Voltage - RV (V) 120 Vf Curves shown are for die only. © 2012 Sensitron Semiconductor 221 WEST INDUSTRY COURT DEER PARK, NY 11729-4681 PHONE (631) 586-7600 FAX (631) 242-9798 www.sensitron.com [email protected] SHD114544 SHD114544A SHD114544B SENSITRON TECHNICAL DATA DATA SHEET 4521, REV. A DISCLAIMER: 1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product characteristics. Before ordering, purchasers are advised to contact the Sensitron Semiconductor sales department for the latest version of the datasheet(s). 2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment, medical equipment , and safety equipment) , safety should be ensured by using semiconductor devices that feature assured safety or by means of users’ fail-safe precautions or other arrangement . 3- In no event shall Sensitron Semiconductor be liable for any damages that may result from an accident or any other cause during operation of the user’s units according to the datasheet(s). Sensitron Semiconductor assumes no responsibility for any intellectual property claims or any other problems that may result from applications of information, products or circuits described in the datasheets. 4- In no event shall Sensitron Semiconductor be liable for any failure in a semiconductor device or any secondary damage resulting from use at a value exceeding the absolute maximum rating. 5- No license is granted by the datasheet(s) under any patents or other rights of any third party or Sensitron Semiconductor. 6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed written permission of Sensitron Semiconductor. 7- The products (technologies) described in the datasheet(s) are not to be provided to any party whose purpose in their application will hinder maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or any third party. When exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and regulations. © 2012 Sensitron Semiconductor 221 WEST INDUSTRY COURT DEER PARK, NY 11729-4681 PHONE (631) 586-7600 FAX (631) 242-9798 www.sensitron.com [email protected]