MAGX-000912-500L00 GaN on SiC HEMT Pulsed Power Transistor 500 W Peak, 960 to 1215 MHz, 128 μs Pulse, 10% Duty Rev. V1 Features GaN on SiC Depletion-Mode Transistor Technology Internally matched Common-Source configuration Broadband Class AB operation RoHS* Compliant and 260°C Reflow Compatible +50V Typical Operation MTTF = 600 years (TJ < 200°C) Applications Civilian Air Traffic Control (ATC), L-Band secondary radar for IFF and Mode-S avionics. Military radar for IFF and Data Links. Description The MAGX-000912-500L00 is a gold metalized matched Gallium Nitride (GaN) on Silicon Carbide (SiC) RF power transistor optimized for pulsed avionics and radar applications. Using state of the art wafer fabrication processes, these high performance transistors provide high gain, efficiency, bandwidth, and ruggedness over a wide bandwidth for today’s demanding application needs. High breakdown voltages allow for reliable and stable operation under more extreme mismatch load conditions compared with older semiconductor technologies. Ordering Information Part Number MAGX-000912-500L00 MAGX-000912-SB3PPR Description 500 W GaN Power Transistor (Production) 960 - 1215 MHz Evaluation Board * Restrictions on Hazardous Substances, European Union Directive 2002/95/EC. 1 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macomtech.com for additional data sheets and product information. • North America Tel: 800.366.2266 / Fax: 978.366.2266 • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 MAGX-000912-500L00 GaN on SiC HEMT Pulsed Power Transistor 500 W Peak, 960 to 1215 MHz, 128 μs Pulse, 10% Duty Rev. V1 Typical RF Performance under standard operating conditions, POUT = 500 W (Peak) Freq (MHz) PIN (W) Gain (dB) ID (A) Eff. (%) RL (dB) Droop (dB) +1dB OD (W) VSWR-S (3:1) VSWR-T (5:1) 960 5.8 19.4 17.2 58.1 -6.4 0.4 563 S P 1025 4.9 20.1 16.2 61.4 -7.6 0.3 551 S P 1090 4.4 20.6 15.8 63.4 -9.6 0.3 560 S P 1150 4.4 20.6 17.0 58.7 -17.0 0.2 548 S P 1215 4.6 20.5 15.7 63.7 -12.6 0.2 558 S P Electrical Specifications: Freq. = 960 - 1215 MHz, TA = 25°C Parameter Test Conditions Symbol Min. Typ. Max. Units RF Functional Tests: VDD = 50 V; IDQ = 400 mA; Pulse = 128 µs / 10% Input Power POUT = 500 W Peak (50 W avg.) PIN - 5.2 7.9 Wpk Power Gain POUT = 500 W Peak (50 W avg.) GP 18 19.8 - dB Drain Efficiency POUT = 500 W Peak (50 W avg.) ηD 51 60 - % Pulse Droop POUT = 500 W Peak (50 W avg.) Droop - 0.3 0.6 dB Load Mismatch Stability POUT = 500 W Peak (50 W avg.) VSWR-S - 3:1 - - Load Mismatch Tolerance POUT = 500 W Peak (50 W avg.) VSWR-T - 5:1 - - Symbol Min. Typ. Max. Units IDS - 1.0 30 mA VGS (TH) -5 -3.1 -2 V Electrical Characteristics: TA = 25°C Parameter Test Conditions DC Characteristics Drain-Source Leakage Current VGS = -8 V, VDS = 175 V Gate Threshold Voltage VDS = 5 V, ID = 75 mA Forward Transconductance VDS = 5 V, ID = 17.5 mA GM 12.5 19.2 - S Input Capacitance Not applicable - Input matched CISS N/A N/A N/A pF Output Capacitance VDS = 50 V, VGS = -8 V, F = 1 MHz COSS - 55 - pF Reverse Transfer Capacitance VDS = 50 V, VGS = -8 V, F = 1 MHz CRSS - 5.5 - pF Dynamic Characteristics 2 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macomtech.com for additional data sheets and product information. • North America Tel: 800.366.2266 / Fax: 978.366.2266 • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 MAGX-000912-500L00 GaN on SiC HEMT Pulsed Power Transistor 500 W Peak, 960 to 1215 MHz, 128 μs Pulse, 10% Duty Rev. V1 Absolute Maximum Ratings1,2,3,4 1. 2. 3. 4. Parameter Limit Supply Voltage (VDD) +65 V Supply Voltage (VGS) -8 to -2 V Supply Current (IDMAX) 21.5 A Input Power (PIN) PIN (nominal) + 3 dB Absolute Max. Junction/Channel Temp 200ºC Pulsed Power Dissipation at 85 ºC 575 W Thermal Resistance, (TJ = 70 ºC) VDD = 50 V, IDQ = 400 mA, Pout = 500 W, 128 µs Pulse / 10% Duty 0.20 ºC/W Operating Temp -40 to +95ºC Storage Temp -65 to +150ºC Mounting Temperature See solder reflow profile ESD Min. - Charged Device Model (CDM) 1300 V ESD Min. - Human Body Model (HBM) 4000 V Operation of this device above any one of these parameters may cause permanent damage. Input Power Limit is +3 dB over nominal drive required to achieve P OUT = 500 W. Channel temperature directly affects a device's MTTF. Channel temperature should be kept as low as possible to maximize lifetime. For saturated performance it recommended that the sum of (3*V DD + abs(VGG)) <175 V. Correct Device Sequencing Test Fixture Impedances F (MHz) ZIF (Ω) ZOF (Ω) 960 1.1 - j1.1 1.8 + j0.8 1025 1.4 - j0.7 2.2 + j0.8 1090 1.7 - j0.5 2.4 + j0.6 1150 2.1 - j0.4 2.3 + j0.3 1215 2.4 - j0.7 1.9 + j0.2 Zif INPUT NETWORK Turning the device ON 1. Set VGS to the pinch-off (VP), typically -5 V. 2. Turn on VDS to nominal voltage (50 V). 3. Increase VGS until the IDS current is reached. 4. Apply RF power to desired level. Turning the device OFF 1. Turn the RF power off. 2. Decrease VGS down to VP. 3. Decrease VDS down to 0 V. 4. Turn off VGS OUTPUT NETWORK Zof 3 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macomtech.com for additional data sheets and product information. • North America Tel: 800.366.2266 / Fax: 978.366.2266 • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 MAGX-000912-500L00 GaN on SiC HEMT Pulsed Power Transistor 500 W Peak, 960 to 1215 MHz, 128 μs Pulse, 10% Duty Rev. V1 Test Fixture Circuit Dimensions Test Fixture Assembly Contact factory for gerber file or additional circuit information. 4 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macomtech.com for additional data sheets and product information. • North America Tel: 800.366.2266 / Fax: 978.366.2266 • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 MAGX-000912-500L00 GaN on SiC HEMT Pulsed Power Transistor 500 W Peak, 960 to 1215 MHz, 128 μs Pulse, 10% Duty Rev. V1 RF Power Transfer Curve (Output Power Vs. Input Power) RF Power Transfer Curve (Drain Efficiency Vs. Output Power) 5 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macomtech.com for additional data sheets and product information. • North America Tel: 800.366.2266 / Fax: 978.366.2266 • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 MAGX-000912-500L00 GaN on SiC HEMT Pulsed Power Transistor 500 W Peak, 960 to 1215 MHz, 128 μs Pulse, 10% Duty Rev. V1 Outline Drawing 6 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macomtech.com for additional data sheets and product information. • North America Tel: 800.366.2266 / Fax: 978.366.2266 • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298