SQJ202EP

SQJ202EP
www.vishay.com
Vishay Siliconix
Automotive Dual N-Channel 12 V (D-S) 175 °C MOSFETs
FEATURES
PRODUCT SUMMARY
• TrenchFET® power MOSFET
N-CHANNEL 1
N-CHANNEL 2
12
12
RDS(on) (Ω) at VGS = 10 V
0.0065
0.0033
• 100 % Rg and UIS tested
RDS(on) (Ω) at VGS = 4.5 V
0.0093
0.0045
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
VDS (V)
ID (A)
20
Configuration
60
Dual N
• AEC-Q101 qualified d
PowerPAK® SO-8L Dual Asymmetric
Package
D1
PowerPAK® SO-8L Dual Asymmetric
D2
D1
G1
D2
15
6.
m
m
13
5.
1
m
m
Top View
3
G2
1
2 S1
G1
S1
4 S2
G2
Bottom View
S2
N-Channel 1 MOSFET
N-Channel 2 MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
N-CHANNEL 1
N-CHANNEL 2
Drain-Source Voltage
VDS
12
12
Gate-Source Voltage
VGS
Continuous Drain Current a
TC = 25 °C
TC = 125 °C
Continuous Source Current (Diode Conduction)
Pulsed Drain Current
b
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipation b
L = 0.1 mH
TC = 25 °C
TC = 125 °C
Operating Junction and Storage Temperature Range
ID
± 20
20
60
20
60
IS
20a
44
IDM
80
180
IAS
18
18
EAS
16.2
16.2
27
48
9
16
PD
TJ, Tstg
-55 to +175
Soldering Recommendations (Peak Temperature) e, f
UNIT
V
A
mJ
W
°C
260
THERMAL RESISTANCE RATINGS
PARAMETER
Junction-to-Ambient
Junction-to-Case (Drain)
PCB Mount c
SYMBOL
N-CHANNEL 1
N-CHANNEL 2
RthJA
85
85
RthJC
5.5
3.1
UNIT
°C/W
Notes
a. Package limited.
b. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %.
c. When mounted on 1" square PCB (FR4 material).
d. Parametric verification ongoing.
e. See solder profile (www.vishay.com/doc?73257). The PowerPAK SO-8L is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed
and is not required to ensure adequate bottom side solder interconnection.
f. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
S15-2474-Rev. A, 19-Oct-15
Document Number: 62926
1
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQJ202EP
www.vishay.com
Vishay Siliconix
SPECIFICATIONS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
-
-
UNIT
Static
Drain-Source Breakdown Voltage
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current a
Drain-Source On-State Resistance a
Forward Transconductance b
VDS
VGS(th)
IGSS
IDSS
ID(on)
RDS(on)
VGS = 0 V, ID = 250 μA
N-Ch 1
12
VGS = 0 V, ID = 250 μA
N-Ch 2
12
-
-
VDS = VGS, ID = 250 μA
N-Ch 1
1
1.5
2
VDS = VGS, ID = 250 μA
N-Ch 2
1
1.5
2
N-Ch 1
-
-
± 100
N-Ch 2
-
-
± 100
VDS = 0 V, VGS = ± 20 V
VGS = 0 V
VDS = 12 V
N-Ch 1
-
-
1
VGS = 0 V
VDS = 12 V
N-Ch 2
-
-
1
VGS = 0 V
VDS = 12 V, TJ = 125 °C
N-Ch 1
-
-
50
VGS = 0 V
VDS = 12 V, TJ = 125 °C
N-Ch 2
-
-
50
VGS = 0 V
VDS = 12 V, TJ = 175 °C
N-Ch 1
-
-
500
VGS = 0 V
VDS = 12 V, TJ = 175 °C
N-Ch 2
-
-
500
VGS = 10 V
VDS ≥ 5 V
N-Ch 1
20
-
-
VGS = 10 V
VDS ≥ 5 V
N-Ch 2
30
-
-
VGS = 10 V
ID = 15 A
N-Ch 1
-
0.0052 0.0065
VGS = 10 V
ID = 20 A
N-Ch 2
-
0.0025 0.0033
VGS = 10 V
ID = 15 A, TJ = 125 °C
N-Ch 1
-
0.0075
-
VGS = 10 V
ID = 20 A, TJ = 125 °C
N-Ch 2
-
0.0031
-
VGS = 10 V
ID = 15 A, TJ = 175 °C
N-Ch 1
-
0.0085
-
VGS = 10 V
ID = 20 A, TJ = 175 °C
N-Ch 2
-
0.0038
-
VGS = 4.5 V
ID = 13 A
N-Ch 1
-
0.0075 0.0093
VGS = 4.5 V
ID = 18 A
N-Ch 2
-
0.0034 0.0045
VDS = 10 V, ID = 15 A
N-Ch 1
-
49
-
VDS = 10 V, ID = 20 A
N-Ch 2
-
91
-
gfs
V
nA
μA
A
Ω
S
Dynamic b
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Charge c
Qg
Gate-Source Charge c
Qgs
Gate-Drain Charge c
Qgd
Gate Resistance
Rg
VGS = 0 V
VDS = 6 V, f = 1 MHz
N-Ch 1
-
777
975
VGS = 0 V
VDS = 6 V, f = 1 MHz
N-Ch 2
-
2018
2525
VGS = 0 V
VDS = 6 V, f = 1 MHz
N-Ch 1
-
539
675
VGS = 0 V
VDS = 6 V, f = 1 MHz
N-Ch 2
-
1313
1645
VGS = 0 V
VDS = 6 V, f = 1 MHz
N-Ch 1
-
270
340
VGS = 0 V
VDS = 6 V, f = 1 MHz
N-Ch 2
-
683
855
VGS = 10 V
VDS = 6 V, ID = 20 A
N-Ch 1
-
14.5
22
VGS = 10 V
VDS = 6 V, ID = 60 A
N-Ch 2
-
35.9
54
VGS = 10 V
VDS = 6 V, ID = 20 A
N-Ch 1
-
1.7
-
VGS = 10 V
VDS = 6 V, ID = 60 A
N-Ch 2
-
4.1
-
VGS = 10 V
VDS = 6 V, ID = 20 A
N-Ch 1
-
2.1
-
VGS = 10 V
VDS = 6 V, ID = 60 A
N-Ch 2
-
4.3
-
f = 1 MHz
N-Ch 1
1.3
2.6
4
N-Ch 2
0.5
1.1
1.7
pF
nC
Ω
Notes
a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
S15-2474-Rev. A, 19-Oct-15
Document Number: 62926
2
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQJ202EP
www.vishay.com
Vishay Siliconix
SPECIFICATIONS (TC = 25 °C, unless otherwise noted)
PARAMETER
Turn-On Delay Time c
Rise Time c
Turn-Off Delay Time c
Fall Time c
SYMBOL
td(on)
tr
td(off)
tf
TEST CONDITIONS
MIN.
TYP.
MAX.
VDD = 6 V, RL = 0.3 Ω
ID ≅ 20 A, VGEN = 10 V, Rg = 1 Ω
N-Ch 1
-
8.8
13.5
VDD = 6 V, RL = 0.1 Ω
ID ≅ 60 A, VGEN = 10 V, Rg = 1 Ω
N-Ch 2
-
10.7
16.5
VDD = 6 V, RL = 0.3 Ω
ID ≅ 20 A, VGEN = 10 V, Rg = 1 Ω
N-Ch 1
-
3.2
5
VDD = 6 V, RL = 0.1 Ω
ID ≅ 60 A, VGEN = 10 V, Rg = 1 Ω
N-Ch 2
-
4.5
7
VDD = 6 V, RL = 0.3 Ω
ID ≅ 20 A, VGEN = 10 V, Rg = 1 Ω
N-Ch 1
-
20
30
VDD = 6 V, RL = 0.1 Ω
ID ≅ 60 A, VGEN = 10 V, Rg = 1 Ω
N-Ch 2
-
28
42
VDD = 6 V, RL = 0.3 Ω
ID ≅ 20 A, VGEN = 10 V, Rg = 1 Ω
N-Ch 1
-
2.6
4
VDD = 6 V, RL = 0.1 Ω
ID ≅ 60 A, VGEN = 10 V, Rg = 1 Ω
N-Ch 2
-
5
8
N-Ch 1
-
-
80
N-Ch 2
-
-
180
IF = 10 A, VGS = 0 V
N-Ch 1
-
0.8
1.2
IF = 20 A, VGS = 0 V
N-Ch 2
-
0.8
1.2
UNIT
ns
Source-Drain Diode Ratings and Characteristics b
Pulsed Current a
ISM
Forward Voltage
VSD
A
V
Notes
a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S15-2474-Rev. A, 19-Oct-15
Document Number: 62926
3
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQJ202EP
www.vishay.com
Vishay Siliconix
N-CHANNEL 1 TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
50
70
VGS = 10 V thru 4 V
TC = - 55 °C
56
gfs - Transconductance (S)
ID - Drain Current (A)
40
TC = 25 °C
30
20
10
42
TC = 125 °C
28
14
VGS = 3 V
0
0
2
4
6
8
10
0
9
12
Output Characteristics
Transconductance
1500
32
1200
TC = 25 °C
16
15
900
Ciss
Coss
600
Crss
TC = 125°C
8
300
TC = - 55 °C
0
0
0
1
2
3
4
0
5
2
4
6
8
10
VGS - Gate-to-Source Voltage (V)
VDS - Drain-to-Source Voltage (V)
Transfer Characteristics
Capacitance
0.01
12
VGS - Gate-to-Source Voltage (V)
10
0.01
RDS(on) - On-Resistance (Ω)
6
ID - Drain Current (A)
40
24
3
VDS - Drain-to-Source Voltage (V)
C - Capacitance (pF)
ID - Drain Current (A)
0
VGS = 4.5 V
0.01
VGS = 10 V
0.00
0.00
0.00
8
ID = 20A
VDS = 6 V
6
4
2
0
0
10
20
30
40
50
0
4
8
12
ID - Drain Current (A)
Qg - Total Gate Charge (nC)
On-Resistance vs. Drain Current
Gate Charge
S15-2474-Rev. A, 19-Oct-15
16
20
Document Number: 62926
4
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQJ202EP
www.vishay.com
Vishay Siliconix
N-CHANNEL 1 TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
0.05
100
0.04
10
RDS(on) - On-Resistance (Ω)
IS - Source Current (A)
TJ = 150 °C
1
TJ = 25 °C
0.1
0.01
0.03
0.02
TJ = 150 °C
0.01
TJ = 25 °C
0.00
0.001
0.0
0.2
0.4
0.6
0.8
1.0
0
1.2
4
6
8
10
VGS - Gate-to-Source Voltage (V)
Source Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
0.7
VDS - Drain-to-Source Voltage (V)
16
0.3
VGS(th) Variance (V)
2
VSD - Source-to-Drain Voltage (V)
- 0.1
ID = 5 mA
- 0.5
ID = 250 μA
- 0.9
ID = 1 mA
15
14
13
12
- 1.3
11
- 50 - 25
0
25
50
75
100
125
150
175
- 50 - 25
0
25
50
75
100
125
150
175
TJ - Temperature (°C)
TJ - Junction Temperature (°C)
Threshold Voltage
Drain Source Breakdown vs. Junction Temperature
100
2.0
IDM Limited
1.7
VGS = 4.5 V
ID = 15 A
10
1.4
VGS = 10 V
1.1
ID - Drain Current (A)
RDS(on) - On-Resistance (Normalized)
100 μs
1 ms
ID Limited
1
10 ms
100 ms, 1 s,
10 s, DC
Limited by RDS(on)*
0.1
0.8
TC = 25 °C
Single Pulse
0.5
- 50 - 25
0
25
50
75
100
125
150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
S15-2474-Rev. A, 19-Oct-15
175
0.01
0.01
BVDSS Limited
0.1
1
10
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area
Document Number: 62926
5
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQJ202EP
www.vishay.com
Vishay Siliconix
N-CHANNEL 1 TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
Notes:
0.1
PDM
0.1
0.05
t1
t2
1. Duty Cycle, D =
0.02
2. Per Unit Base = R thJA = 85 °C/W
3. T JM - TA = PDMZthJA(t)
Single Pulse
0.01
10- 4
t1
t2
4. Surface Mounted
10- 3
10- 2
10- 1
1
Square Wave Pulse Duration (s)
10
100
600
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10 - 4
10 - 3
10 - 2
Square Wave Pulse Duration (s)
10 - 1
1
Normalized Thermal Transient Impedance, Junction-to-Case
Note
• The characteristics shown in the graph:
- Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C)
is given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single
pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part
mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities
can widely vary depending on actual application parameters and operating conditions.
S15-2474-Rev. A, 19-Oct-15
Document Number: 62926
6
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQJ202EP
www.vishay.com
Vishay Siliconix
N-CHANNEL 2 TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
80
120
TC = - 55 °C
VGS = 10 V thru 4 V
TC = 25 °C
96
gfs - Transconductance (S)
ID - Drain Current (A)
64
48
32
16
72
TC = 125 °C
48
24
VGS = 3 V
0
0
2
4
6
8
10
0
16
Transconductance
36
2400
TC = 25 °C
18
1800
Coss
1200
TC = - 55 °C
TC = 125°C
20
Ciss
Crss
600
0
0
0
1
2
3
4
0
5
2
4
6
8
10
VGS - Gate-to-Source Voltage (V)
VDS - Drain-to-Source Voltage (V)
Transfer Characteristics
Capacitance
0.005
12
VGS - Gate-to-Source Voltage (V)
10
0.004
RDS(on) - On-Resistance (Ω)
12
Output Characteristics
3000
9
8
VDS - Drain-to-Source Voltage (V)
45
27
4
ID - Drain Current (A)
C - Capacitance (pF)
ID - Drain Current (A)
0
0.003
VGS = 4.5 V
0.002
VGS = 10 V
0.001
0.000
8
ID = 60A
VDS = 6 V
6
4
2
0
0
10
20
30
40
50
0
8
16
24
ID - Drain Current (A)
Qg - Total Gate Charge (nC)
On-Resistance vs. Drain Current
Gate Charge
S15-2474-Rev. A, 19-Oct-15
32
40
Document Number: 62926
7
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQJ202EP
www.vishay.com
Vishay Siliconix
N-CHANNEL 2 TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
0.015
100
0.012
RDS(on) - On-Resistance (Ω)
IS - Source Current (A)
10
TJ = 150 °C
1
TJ = 25 °C
0.1
0.01
0.009
0.006
TJ = 150 °C
0.003
TJ = 25 °C
0.000
0.001
0.0
0.2
0.4
0.6
0.8
1.0
0
1.2
4
6
8
10
VGS - Gate-to-Source Voltage (V)
Source Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
0.7
VDS - Drain-to-Source Voltage (V)
17
0.3
VGS(th) Variance (V)
2
VSD - Source-to-Drain Voltage (V)
- 0.1
ID = 5 mA
- 0.5
ID = 250 μA
- 0.9
- 1.3
16
ID = 1 mA
15
14
13
12
- 50 - 25
0
25
50
75
100
125
150
175
- 50 - 25
0
25
50
75
100
125
150
175
TJ - Temperature (°C)
TJ - Junction Temperature (°C)
Threshold Voltage
Drain Source Breakdown vs. Junction Temperature
1000
2.0
1.7
VGS = 4.5 V
ID = 20 A
100
1.4
VGS = 10 V
1.1
ID - Drain Current (A)
RDS(on) - On-Resistance (Normalized)
IDM Limited
Limited by RDS(on)*
1 ms
10 ms
100 ms, 1 s,
10 s, DC
1
0.8
0.5
- 50 - 25
0
25
50
75
100
125
150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
S15-2474-Rev. A, 19-Oct-15
175
ID Limited
10
0.1
0.01
TC = 25 °C
Single Pulse
BVDSS Limited
0.1
1
10
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area
Document Number: 62926
8
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQJ202EP
www.vishay.com
Vishay Siliconix
N-CHANNEL 2 TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
Notes:
0.1
PDM
0.1
0.05
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = R thJA = 85 °C/W
0.02
3. T JM - TA = PDMZthJA(t)
Single Pulse
0.01
10- 4
4. Surface Mounted
10- 3
10- 2
10- 1
1
Square Wave Pulse Duration (s)
10
100
600
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10 - 4
10 - 3
10 - 2
Square Wave Pulse Duration (s)
10 - 1
1
Normalized Thermal Transient Impedance, Junction-to-Case
Note
• The characteristics shown in the graph:
- Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C)
is given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single
pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part
mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities
can widely vary depending on actual application parameters and operating conditions.
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?62926.
S15-2474-Rev. A, 19-Oct-15
Document Number: 62926
9
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Ordering Information
www.vishay.com
Vishay Siliconix
PowerPAK® SO-8L
Ordering codes for the SQ rugged series power MOSFETs in the PowerPAK SO-8L package:
DATASHEET PART NUMBER
OLD ORDERING CODE a
NEW ORDERING CODE
SQJ200EP
-
SQJ200EP-T1_GE3
SQJ202EP
-
SQJ202EP-T1_GE3
SQJ401EP
SQJ401EP-T1-GE3
SQJ401EP-T1_GE3
SQJ402EP
SQJ402EP-T1-GE3
SQJ402EP-T1_GE3
SQJ403EEP
SQJ403EEP-T1-GE3
SQJ403EEP-T1_GE3
SQJ403EP
-
SQJ403EP-T1_GE3
SQJ410EP
SQJ410EP-T1-GE3
SQJ410EP-T1_GE3
SQJ412EP
SQJ412EP-T1-GE3
SQJ412EP-T1_GE3
SQJ422EP
SQJ422EP-T1-GE3
SQJ422EP-T1_GE3
SQJ431EP
SQJ431EP-T1-GE3
SQJ431EP-T1_GE3
SQJ443EP
SQJ443EP-T1-GE3
SQJ443EP-T1_GE3
SQJ446EP
-
SQJ446EP-T1_GE3
SQJ456EP
SQJ456EP-T1-GE3
SQJ456EP-T1_GE3
SQJ459EP
-
SQJ459EP-T1_GE3
SQJ460AEP
-
SQJ460AEP-T1_GE3
SQJ461EP
SQJ461EP-T1-GE3
SQJ461EP-T1_GE3
SQJ463EP
SQJ463EP-T1-GE3
SQJ463EP-T1_GE3
SQJ465EP
SQJ465EP-T1-GE3
SQJ465EP-T1_GE3
SQJ469EP
SQJ469EP-T1-GE3
SQJ469EP-T1_GE3
SQJ486EP
SQJ486EP-T1-GE3
SQJ486EP-T1_GE3
SQJ488EP
SQJ488EP-T1-GE3
SQJ488EP-T1_GE3
SQJ500AEP
SQJ500AEP-T1-GE3
SQJ500AEP-T1_GE3
SQJ840EP
SQJ840EP-T1-GE3
SQJ840EP-T1_GE3
SQJ844AEP
SQJ844AEP-T1-GE3
SQJ844AEP-T1_GE3
SQJ850EP
SQJ850EP-T1-GE3
SQJ850EP-T1_GE3
SQJ858AEP
SQJ858AEP-T1-GE3
SQJ858AEP-T1_GE3
SQJ886EP
SQJ886EP-T1-GE3
SQJ886EP-T1_GE3
SQJ910AEP
SQJ910AEP-T1-GE3
SQJ910AEP-T1_GE3
SQJ912AEP
SQJ912AEP-T1-GE3
SQJ912AEP-T1_GE3
SQJ940EP
SQJ940EP-T1-GE3
SQJ940EP-T1_GE3
SQJ942EP
SQJ942EP-T1-GE3
SQJ942EP-T1_GE3
SQJ951EP
SQJ951EP-T1-GE3
SQJ951EP-T1_GE3
SQJ952EP
-
SQJ952EP-T1_GE3
SQJ956EP
SQJ956EP-T1-GE3
SQJ956EP-T1_GE3
SQJ960EP
SQJ960EP-T1-GE3
SQJ960EP-T1_GE3
SQJ963EP
SQJ963EP-T1-GE3
SQJ963EP-T1_GE3
SQJ968EP
SQJ968EP-T1-GE3
SQJ968EP-T1_GE3
SQJ980AEP
SQJ980AEP-T1-GE3
SQJ980AEP-T1_GE3
SQJ992EP
SQJ992EP-T1-GE3
SQJ992EP-T1_GE3
Note
a. Old ordering code is obsolete and no longer valid for new orders
Revision: 21-Oct-15
Document Number: 65804
1
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
www.vishay.com
Vishay Siliconix
PowerPAK® SO-8L Assymetric Case Outline
b2
D5
K1
D4
D3
D2
A1
b
b1
e
D1
θ
b3
K2
0.25 gauge line
D
PIN 1
PIN 1
DIM.
A
A1
b
b1
b2
b3
c
D
D1
D2
D3
D4
D5
e
E
E1
E2
E3
F
L
L1
K
K1
K2
W
W1
W2
W3
W4
θ
DWG: 6009
MIN.
1.00
0.00
0.33
0.44
4.80
0.04
0.20
5.00
4.80
3.63
0.81
1.98
1.47
1.20
6.05
4.27
2.75
1.89
0.05
0.62
0.92
0.41
0.64
0.54
0.13
0.31
2.72
2.86
0.41
5°
MILLIMETERS
NOM.
1.07
0.06
0.41
0.51
4.90
0.12
0.25
5.13
4.90
3.73
0.91
2.08
1.57
1.27
6.15
4.37
2.85
1.99
0.12
0.72
1.07
0.51
0.74
0.64
0.23
0.41
2.82
2.96
0.51
10°
MAX.
1.14
0.13
0.48
0.58
5.00
0.20
0.30
5.25
5.00
3.83
1.01
2.18
1.67
1.34
6.25
4.47
2.95
2.09
0.19
0.82
1.22
0.61
0.84
0.74
0.33
0.51
2.92
3.06
0.61
12°
MIN.
0.039
0.000
0.013
0.017
0.189
0.002
0.008
0.197
0.189
0.143
0.032
0.078
0.058
0.047
0.238
0.168
0.108
0.074
0.002
0.024
0.036
0.016
0.025
0.021
0.005
0.012
0.107
0.113
0.016
5°
INCHES
NOM.
0.042
0.003
0.016
0.020
0.193
0.005
0.010
0.202
0.193
0.147
0.036
0.082
0.062
0.050
0.242
0.172
0.112
0.078
0.005
0.028
0.042
0.020
0.029
0.025
0.009
0.016
0.111
0.117
0.020
10°
MAX.
0.045
0.005
0.019
0.023
0.197
0.008
0.012
0.207
0.197
0.151
0.040
0.086
0.066
0.053
0.246
0.176
0.116
0.082
0.007
0.032
0.048
0.024
0.033
0.029
0.013
0.020
0.115
0.120
0.024
12°
Note
• Millimeters will govern
Document Number: 62714
1
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
C14-0057-Rev. D, 07-Apr-14
PAD Pattern
www.vishay.com
Vishay Siliconix
RECOMMENDED MINIMUM PADs FOR PowerPAK® SO-8L DUAL ASYMMETRIC
Recommended Minimum Pads
Dimensions in mm [inches]
Revision: 07-Mar-13
1
Document Number: 64477
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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www.vishay.com
Vishay
Disclaimer
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Revision: 02-Oct-12
1
Document Number: 91000