SQJ886EP Datasheet

SQJ886EP
www.vishay.com
Vishay Siliconix
Automotive N-Channel 40 V (D-S) 175 °C MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
• TrenchFET® Power MOSFET
40
RDS(on) () at VGS = 10 V
0.0045
RDS(on) () at VGS = 4.5 V
0.0055
ID (A)
• AEC-Q101 Qualifiedc
• 100 % Rg and UIS Tested
• Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
60
Configuration
Single
PowerPAK® SO-8L Single
m
5m
6.1
D
5.1
3m
m
G
D
4
G
S
3
S
S
2
S
1
N-Channel MOSFET
ORDERING INFORMATION
Package
PowerPAK SO-8L
Lead (Pb)-free and Halogen-free
SQJ886EP-T1-GE3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
Drain-Source Voltage
VDS
40
Gate-Source Voltage
VGS
± 20
Continuous Drain Current
TC = 25 °C
TC = 125 °C
Continuous Source Current (Diode Conduction)
Pulsed Drain Currenta
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipationa
L = 0.1 mH
TC = 25 °C
TC = 125 °C
Operating Junction and Storage Temperature Range
ID
45
IS
50
240
IAS
36
EAS
64
TJ, Tstg
Soldering Recommendations (Peak Temperature)d, e
V
60
IDM
PD
UNIT
55
18
- 55 to + 175
260
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
PARAMETER
Junction-to-Ambient
Junction-to-Case (Drain)
PCB Mountb
SYMBOL
LIMIT
RthJA
70
RthJC
2.7
UNIT
°C/W
Notes
a. Pulse test; pulse width  300 μs, duty cycle  2 %.
b. When mounted on 1" square PCB (FR-4 material).
c. Parametric verification ongoing.
d. See solder profile (www.vishay.com/doc?73257). The PowerPAK SO-8L is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed
and is not required to ensure adequate bottom side solder interconnection.
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
S12-3129-Rev. A, 07-Jan-13
Document Number: 62790
1
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQJ886EP
www.vishay.com
Vishay Siliconix
SPECIFICATIONS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Static
Drain-Source Breakdown Voltage
Gate-Source Threshold Voltage
Gate-Source Leakage
40
-
-
1.5
2.0
2.5
VDS = 0 V, VGS = ± 20 V
IDSS
On-State Drain Currenta
ID(on)
Drain-Source On-State Resistancea
Forward
VGS = 0, ID = 250 μA
VDS = VGS, ID = 250 μA
IGSS
Zero Gate Voltage Drain Current
Transconductanceb
VDS
VGS(th)
RDS(on)
gfs
-
-
± 100
VGS = 0 V
VDS = 40 V
-
-
1
VGS = 0 V
VDS = 40 V, TJ = 125 °C
-
-
50
VGS = 0 V
VDS = 40 V, TJ = 175 °C
-
-
250
VGS = 10 V
VDS5 V
30
-
-
VGS = 10 V
ID = 15.3 A
-
0.0036
0.0045
VGS = 4.5 V
ID = 13.8 A
-
0.0045
0.0055
VGS = 10 V
ID = 15.3 A, TJ = 125 °C
-
-
0.0072
VGS = 10 V
ID = 15.3 A, TJ = 175 °C
-
-
0.0088
-
105
-
-
2338
2922
-
356
445
-
147
184
VDS = 15 V, ID = 15.3 A
V
nA
μA
A

S
Dynamicb
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Chargec
Qg
Gate-Source Chargec
Qgs
Gate-Drain Chargec
Qgd
Gate Resistance
Turn-On Delay Timec
Rise Timec
Turn-Off Delay Timec
Fall Timec
Source-Drain Diode Ratings and
Rg
VGS = 0 V
VGS = 10 V
VDS = 20 V, f = 1 MHz
VDS = 20 V, ID = 20 A
f = 1 MHz
td(on)
tr
td(off)
VDD = 20 V, RL = 2 
ID  10 A, VGEN = 10 V, Rg = 1 
tf
-
43
65
-
8
-
-
7
-
1.25
2.45
5
-
8
12
pF
nC

-
17
25
-
29
44
-
6
9
-
-
240
A
-
0.8
1.2
V
ns
Characteristicsb
Pulsed Currenta
ISM
Forward Voltage
VSD
IF = 10.1 A, VGS = 0
Notes
a. Pulse test; pulse width  300 μs, duty cycle  2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S12-3129-Rev. A, 07-Jan-13
Document Number: 62790
2
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQJ886EP
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
70
70
VGS = 10 V thru 4 V
56
ID - Drain Current (A)
ID - Drain Current (A)
56
42
28
VGS = 3 V
14
42
TC = 25 °C
28
TC = 125 °C
14
TC = - 55 °C
0
0
0
2
4
6
8
10
0
2
4
6
8
10
VGS - Gate-to-Source Voltage (V)
VDS - Drain-to-Source Voltage (V)
Transfer Characteristics
Output Characteristics
0.010
200
TC = 25 °C
TC = - 55 °C
0.008
RDS(on) - On-Resistance (Ω)
gfs - Transconductance (S)
160
120
TC = 125 °C
80
0.006
VGS = 4.5 V
0.004
VGS = 10 V
0.002
40
0.000
0
0
6
12
18
24
0
30
14
28
ID - Drain Current (A)
42
56
70
ID - Drain Current (A)
On-Resistance vs. Drain Current
Transconductance
3500
10
2800
8
VGS - Gate-to-Source Voltage (V)
C - Capacitance (pF)
ID = 20A
Ciss
2100
1400
700
Coss
Crss
VDS = 20 V
6
4
2
0
0
0
10
20
30
VDS - Drain-to-Source Voltage (V)
Capacitance
S12-3129-Rev. A, 07-Jan-13
40
0
10
20
30
40
50
Qg - Total Gate Charge (nC)
Gate Charge
Document Number: 62790
3
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQJ886EP
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
100
ID = 15 A
VGS = 10 V
1.7
10
TJ = 150 °C
IS - Source Current (A)
RDS(on) - On-Resistance (Normalized)
2.0
1.4
VGS = 4.5 V
1.1
1
0.1
TJ = 25 °C
0.8
0.01
0.001
0.5
- 50 - 25
0
25
50
75
100
125
150
0.0
175
0.2
0.4
0.6
0.8
1.0
TJ - Junction Temperature (°C)
VSD - Source-to-Drain Voltage (V)
On-Resistance vs. Junction Temperature
Source Drain Diode Forward Voltage
0.05
1.2
0.4
0.0
VGS(th) Variance (V)
RDS(on) - On-Resistance (Ω)
0.04
0.03
0.02
TJ = 25 °C
0.01
- 0.4
ID = 5 mA
ID = 250 μA
- 0.8
TJ = 150 °C
0.00
- 1.2
0
2
4
6
8
10
- 50 - 25
0
25
50
75
100
VGS - Gate-to-Source Voltage (V)
TJ - Temperature (°C)
On-Resistance vs. Gate-to-Source Voltage
Threshold Voltage
125
150
175
VDS - Drain-to-Source Voltage (V)
50
ID = 1 mA
48
46
44
42
40
- 50 - 25
0
25
50
75
100
125
150
175
TJ - Junction Temperature (°C)
Drain Source Breakdown vs. Junction Temperature
S12-3129-Rev. A, 07-Jan-13
Document Number: 62790
4
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQJ886EP
www.vishay.com
Vishay Siliconix
THERMAL RATINGS (TA = 25 °C, unless otherwise noted)
1000
IDM Limited
100
ID - Drain Current (A)
Limited by RDS(on)*
100 μs
10
1 ms
10 ms
100 ms, 1 s, 10 s, DC
1
0.1
BVDSS Limited
TC = 25 °C
Single Pulse
0.01
0.01
0.1
1
10
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
Notes:
0.1
0.1
PDM
0.05
t1
t2
1. Duty Cycle, D =
0.02
t1
t2
2. Per Unit Base = R thJA = 85 °C/W
3. T JM - TA = PDMZthJA(t)
Single Pulse
4. Surface Mounted
0.01
10- 3
10- 2
10- 1
1
Square Wave Pulse Duration (s)
10
100
600
Normalized Thermal Transient Impedance, Junction-to-Ambient
S12-3129-Rev. A, 07-Jan-13
Document Number: 62790
5
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQJ886EP
www.vishay.com
Vishay Siliconix
THERMAL RATINGS (TA = 25 °C, unless otherwise noted)
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10- 4
10- 3
10- 2
10- 1
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
Note
• The characteristics shown in the two graphs
- Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C)
- Normalized Transient Thermal Impedance Junction-to-Case (25 °C)
are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single
pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part
mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities
can widely vary depending on actual application parameters and operating conditions.
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?62790.
S12-3129-Rev. A, 07-Jan-13
Document Number: 62790
6
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Ordering Information
www.vishay.com
Vishay Siliconix
PowerPAK® SO-8L
Ordering codes for the SQ rugged series power MOSFETs in the PowerPAK SO-8L package:
DATASHEET PART NUMBER
OLD ORDERING CODE a
NEW ORDERING CODE
SQJ200EP
-
SQJ200EP-T1_GE3
SQJ202EP
-
SQJ202EP-T1_GE3
SQJ401EP
SQJ401EP-T1-GE3
SQJ401EP-T1_GE3
SQJ402EP
SQJ402EP-T1-GE3
SQJ402EP-T1_GE3
SQJ403EEP
SQJ403EEP-T1-GE3
SQJ403EEP-T1_GE3
SQJ403EP
-
SQJ403EP-T1_GE3
SQJ410EP
SQJ410EP-T1-GE3
SQJ410EP-T1_GE3
SQJ412EP
SQJ412EP-T1-GE3
SQJ412EP-T1_GE3
SQJ422EP
SQJ422EP-T1-GE3
SQJ422EP-T1_GE3
SQJ431EP
SQJ431EP-T1-GE3
SQJ431EP-T1_GE3
SQJ443EP
SQJ443EP-T1-GE3
SQJ443EP-T1_GE3
SQJ446EP
-
SQJ446EP-T1_GE3
SQJ456EP
SQJ456EP-T1-GE3
SQJ456EP-T1_GE3
SQJ459EP
-
SQJ459EP-T1_GE3
SQJ460AEP
-
SQJ460AEP-T1_GE3
SQJ461EP
SQJ461EP-T1-GE3
SQJ461EP-T1_GE3
SQJ463EP
SQJ463EP-T1-GE3
SQJ463EP-T1_GE3
SQJ465EP
SQJ465EP-T1-GE3
SQJ465EP-T1_GE3
SQJ469EP
SQJ469EP-T1-GE3
SQJ469EP-T1_GE3
SQJ486EP
SQJ486EP-T1-GE3
SQJ486EP-T1_GE3
SQJ488EP
SQJ488EP-T1-GE3
SQJ488EP-T1_GE3
SQJ500AEP
SQJ500AEP-T1-GE3
SQJ500AEP-T1_GE3
SQJ840EP
SQJ840EP-T1-GE3
SQJ840EP-T1_GE3
SQJ844AEP
SQJ844AEP-T1-GE3
SQJ844AEP-T1_GE3
SQJ850EP
SQJ850EP-T1-GE3
SQJ850EP-T1_GE3
SQJ858AEP
SQJ858AEP-T1-GE3
SQJ858AEP-T1_GE3
SQJ886EP
SQJ886EP-T1-GE3
SQJ886EP-T1_GE3
SQJ910AEP
SQJ910AEP-T1-GE3
SQJ910AEP-T1_GE3
SQJ912AEP
SQJ912AEP-T1-GE3
SQJ912AEP-T1_GE3
SQJ940EP
SQJ940EP-T1-GE3
SQJ940EP-T1_GE3
SQJ942EP
SQJ942EP-T1-GE3
SQJ942EP-T1_GE3
SQJ951EP
SQJ951EP-T1-GE3
SQJ951EP-T1_GE3
SQJ952EP
-
SQJ952EP-T1_GE3
SQJ956EP
SQJ956EP-T1-GE3
SQJ956EP-T1_GE3
SQJ960EP
SQJ960EP-T1-GE3
SQJ960EP-T1_GE3
SQJ963EP
SQJ963EP-T1-GE3
SQJ963EP-T1_GE3
SQJ968EP
SQJ968EP-T1-GE3
SQJ968EP-T1_GE3
SQJ980AEP
SQJ980AEP-T1-GE3
SQJ980AEP-T1_GE3
SQJ992EP
SQJ992EP-T1-GE3
SQJ992EP-T1_GE3
Note
a. Old ordering code is obsolete and no longer valid for new orders
Revision: 21-Oct-15
Document Number: 65804
1
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
www.vishay.com
Vishay Siliconix
PowerPAK® SO-8L Case Outline
for all Parts
Document Number: 66934
1
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Revision: 07-Sep-15
Package Information
www.vishay.com
DIM.
Vishay Siliconix
MILLIMETERS
INCHES
MIN.
NOM.
MAX.
MIN.
NOM.
MAX.
A
1.00
1.07
1.14
0.039
0.042
0.045
A1
0.00
-
0.127
0.00
-
0.005
b
0.33
0.41
0.48
0.013
0.016
0.019
b1
0.44
0.51
0.58
0.017
0.020
0.023
b2
4.80
4.90
5.00
0.189
0.193
0.197
b3
0.094
0.004
b4
0.47
0.019
c
0.20
0.25
0.30
0.008
0.010
0.012
D
5.00
5.13
5.25
0.197
0.202
0.207
D1
4.80
4.90
5.00
0.189
0.193
0.197
D2
3.86
3.96
4.06
0.152
0.156
0.160
D3
1.63
1.73
1.83
0.064
0.068
0.072
e
1.27 BSC
0.050 BSC
E
6.05
6.15
6.25
0.238
0.242
0.246
E1
4.27
4.37
4.47
0.168
0.172
0.176
E2
2.75
2.85
2.95
0.108
0.112
0.116
F
-
-
0.15
-
-
0.006
L
0.62
0.72
0.82
0.024
0.028
0.032
L1
0.92
1.07
1.22
0.036
0.042
0.048
K
0.51
0.020
W
0.23
0.009
W1
0.41
0.016
W2
2.82
0.111
W3
q
2.96
0°
-
0.117
10°
0°
-
10°
ECN: C15-1203-Rev. A, 07-Sep-15
DWG: 6044
Note
• Millimeters will gover
Document Number: 66934
2
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Revision: 07-Sep-15
PAD Pattern
www.vishay.com
Vishay Siliconix
RECOMMENDED MINIMUM PAD FOR PowerPAK® SO-8L SINGLE
5.000
(0.197)
0.510
(0.020)
2.310
(0.091)
4.061
(0.160)
0.595
(0.023)
6.250
(0.246)
8.250
(0.325)
3.630
(0.143)
0.610
(0.024)
0.410
(0.016)
2.715
(0.107)
0.860
(0.034)
1.291
(0.051)
0.710
(0.028)
0.820
(0.032)
1.905
(0.075)
1.270
(0.050)
7.250
(0.285)
Recommended Minimum Pads
Dimensions in mm (inches)
Revision: 07-Feb-12
1
Document Number: 63818
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please
contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by
any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
Material Category Policy
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.
Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free
requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
conform to JEDEC JS709A standards.
Revision: 02-Oct-12
1
Document Number: 91000