2N3027-2N3032 SILICON CONTROLLED RECTIFIER High-reliability discrete products and engineering services since 1977 FEATURES Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number. Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix. MAXIMUM RATINGS Symbol 2N3027 2N3030 2N3028 2N3031 2N3029 2N3032 Repetitive peak off-state voltage VDRM 30V 60V 100V Repetitive peak reverse voltage VRRM 30V 60V 100V Characteristic DC on-state current 100°C case 75°C ambient IT 500mA 250mA Repetitive peak on-state current ITRM 30A Surge (non-repetitive) on-state current 50ms 8ms ITSM 5A 8A Peak gate current IGM 250mA Average gate current IG(AV) 25mA Reverse gate voltage VGR 5V Reverse gate current IGR 3mA Storage temperature range Tstg -65°C to +200°C Operating temperature range TJ -65°C to +150°C Blocking voltage ratings apply over the operating temperature range, provided the gate is connected to the cathode through an appropriate resistor, or adequate gate bias is used. ELECTRICAL CHARACTERISTIC (@ 25°C unless otherwise noted) (2N3027-2N3029) Parameter Symbol Min. Typ. Max. Unit Test Condition Off state current IDRM - 0.002 0.100 µA RGK = 1KΩ, V DRM = rating Reverse current IRRM - 0.002 0.100 µA RGK = 1KΩ, V RRM = rating Reverse gate voltage VGR 5 8 - V IGR = 0.1mA 25°C tests Gate trigger current IGT -5 8 200 µA RGS = 10KΩ, V D = 5V Gate trigger voltage VGT 0.400 0.550 0.800 V RGS = 100Ω, V D = 5V On-state voltage VT 0.800 1.200 1.500 V IT = 1A (pulse test) Holding current IH 0.300 0.700 5.000 mA RGK = 1KΩ, V D = 5V dv/dt 30 15 10 60 30 25 - V/µs RGK = 1KΩ, V D = 30V (2N3027) RGK = 1KΩ, V D = 60V (2N3028) RGK = 1KΩ, V D = 100V (2N3029) tpg(on) - 0.070 0.200 µs IG = 10mA, IT = 1A, VD = 30V td - 0.080 - µs IG = 10mA, IT = 1A, VD = 30V Rise time tr - 0.040 - µs IG = 10mA, IT = 1A, VD = 30V Circuit commutated turn-off time tg - 0.700 2.000 µs IT = 1A, IR = 1A, RGK = 1KΩ Off-state voltage – critical rate of rise Gate trigger-on pulse width Delay time Rev. 20150306 2N3027-2N3032 SILICON CONTROLLED RECTIFIER High-reliability discrete products and engineering services since 1977 Parameter Symbol Min. Typ. Max. Unit High temperature off-state current IDRM High temperature reverse current IRRM High temperature gate trigger voltage Test Condition - 2 20 µA RGK = 1KΩ , VDRM = rating - 20 50 µA RGK = 1KΩ, V RRM = rating VGT 0.100 0.150 0.600 V RGS = 100Ω, V D = 5V IH 0.050 0.200 1.000 mA RGK = 1KΩ, V D = 5V Low temperature gate trigger voltage VGT 0.600 0.750 1.100 V RGS = 100Ω, V D = 5V Low temperature gate trigger current IGT 0 150 1.200 mA RGS = 10KΩ, V D = 5V Low temperature holding current IH 0.500 10 mA RGK = 1KΩ, V D = 5V 150°C Tests High temperature holding current -65°C Tests 3.500 ELECTRICAL CHARACTERISTIC (@ 25°C unless otherwise noted) (2N3030-2N3032) 25°C tests Off state current IDRM - 0.002 0.100 µA RGK = 1KΩ, V DRM = rating Reverse current IRRM - 0.002 0.100 µA RGK = 1KΩ, V RRM = rating Reverse gate voltage VGR 5 8 Gate trigger current IGT -5 Gate trigger voltage VGT 0.440 On-state voltage VT 0.800 1.200 Holding current IH 0.300 Off-state voltage – critical rate of rise dv/dt Gate trigger-on pulse width - V IGR = 0.1mA 20 µA RGS = 10KΩ, VD = 5V 0.600 V RGS = 100Ω, VD = 5V 1.500 V IT = 1A (pulse test) 1.000 4.000 mA RGK = 1KΩ, V D = 5V 30 15 10 60 30 25 - V/µs RGK = 1KΩ, V D = 30V (2N3030) RGK = 1KΩ, V D = 60V (2N3031) RGK = 1KΩ, V D = 100V (2N3032) tpg(on) - 0.050 0.100 µs IG = 10mA, IT = 1A, VD = 30V Delay time td - 0.100 - µs IG = 10mA, IT = 1A, VD = 30V Rise time tr - 0.050 - µs IG = 10mA, IT = 1A, VD = 30V Circuit commutated turn-off time tg - 0.700 2.000 µs IT = 1A, IR = 1A, RGK = 1K High temperature off-state current IDRM - 2 20 µA RGK = 1KΩ, V DRM = rating High temperature reverse current IRRM - 20 50 µA RGK = 1KΩ, V RRM = rating High temperature gate trigger voltage VGT 0.100 0.150 0.400 V RGS = 100Ω, VD = 5V IH 0.050 0.300 2.000 mA Low temperature gate trigger voltage VGT 0.440 0.800 0.950 V RGS = 100Ω, V D = 5V Low temperature gate trigger current IGT 0 0.400 0.500 mA RGS = 10KΩ, VD = 5V Low temperature holding current IH 0.500 5.000 8 mA RGK = 1KΩ, V D = 5V 150°C Tests High temperature holding current RGK = 1K, VD = 5V -65°C Tests Rev. 20150306 High-reliability discrete products and engineering services since 1977 2N3027-2N3032 SILICON CONTROLLED RECTIFIER MECHANICAL CHARACTERISTICS Case TO-18 Marking Alpha-numeric Pin out See below TO-18 A B C D E F G H J K L M N P Inches Min Max 0.209 0.230 0.178 0.195 0.170 0.210 0.016 0.021 0.030 0.016 0.019 0.100 BSC 0.036 0.046 0.028 0.048 0.500 0.250 45°C BSC 0.050 BSC 0.050 Millimeters Min Max 5.310 5.840 4.520 4.950 4.320 5.330 0.406 0.533 0.762 0.406 0.483 2.540 BSC 0.914 1.170 0.711 1.220 12.700 6.350 45° BSC 1.270 BSC 1.270 Rev. 20150306 High-reliability discrete products and engineering services since 1977 2N3027-2N3032 SILICON CONTROLLED RECTIFIER Rev. 20150306 High-reliability discrete products and engineering services since 1977 2N3027-2N3032 SILICON CONTROLLED RECTIFIER Rev. 20150306 High-reliability discrete products and engineering services since 1977 2N3027-2N3032 SILICON CONTROLLED RECTIFIER Rev. 20150306 High-reliability discrete products and engineering services since 1977 2N3027-2N3032 SILICON CONTROLLED RECTIFIER Rev. 20150306