2N2322(A)-2N2329(A) SILICON CONTROLLED RECTFIERS High-reliability discrete products and engineering services since 1977 FEATURES Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number. Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix. MAXIMUM RATINGS Ratings Symbol 2N2322 2N2322A 2N2323 2N2323A 2N2324 2N2324A 2N2325 2N2325A 2N2326 2N2326A 2N2327 2N2327A 2N2328 2N2328A 2N2329 Units Peak repetitive forward voltage VDRM 25 50 100 150 200 250 300 400 V Peak repetitive reverse voltage VRRM 25 50 100 150 200 250 300 400 V Non-repetitive peak reverse voltage VRSM 40 75 150 225 300 350 400 500 V DC on-state current 80°C ambient 85°C case IT(AV) 300 1.6 mA A One cycle surge on-state current ITSM 15 A Repetitive peak on-state current ITM 30 A Gate power dissipation PGM 0.1 W Gate power dissipation PGM(AV) 0.01 W Peak gate current IGM 100 mA Reverse gate voltage VGR 6 V Reverse gate current IGR 3 mA Operating temperature Top -65 to +125 °C Storage junction temperature Tstg -65 to +150 °C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Symbol Min Typ Max Unit Test Condition Off-state current Characteristics IDRM - 0.1 10 µA VDRM = rating, RGK = 1K (2K for “A” types) Reverse current IRRM - 0.1 10 µA VRRM = rating, RGK = 1K (2K for “A” types) Gate trigger current “A” types Non “A” types IGT - 2 50 20 200 µA VD = 6V, RL = 100Ω Gate trigger voltage “A” types Non “A” types VGT 0.35 0.35 0.52 0.55 0.60 0.80 V VD = 6V, RGK = 2K, RL = 100Ω VD = 6V, RGK = 1K, RL = 100Ω On-state voltage VTM - 2.0 2.2 V ITM = 4A (pulse test) Holding current IH - 0.3 2.0 mA VD = 6V, RGK = 1K (2K for “A” types) Reverse gate current IGR - 1 200 µA VGR = 6V Delay time td - 0.6 - µs IG = 10mA, IT = 1A, VD = 30V Rise time tr - 0.4 - µs IG = 10mA, IT = 1A, VD = 30V Circuit commutated turn off time tq - 20 - µs IT = 1A, IR = 1A, RGK = 1K ELECTRICAL CHARACTERISTICS @ 125°C Symbol Min Typ Max Unit Test Condition Off-state current Characteristics IDRM - 1 100 µA VDRM = rating, RGK = 1K (2K for “A” types) Reverse current IRRM - 1 100 µA VRRM = rating, RGK = 1K (2K for “A” types) Gate trigger voltage VGT 0.1 0.3 - V VD = rated VD, RGK = 1K (2K for “A” types) IH 0.1 0.15 - - mA VD = 6V, RGK = 2K VD = 6V, RGK = 1K dv/dt 0.7 1.8 - - V/µs VDRM = rating, RGK = 2K VDRM = rating, RGK = 1K Holding current “A” types Non “A” types Off-state voltage – critical rate of rise “A” types Non “A” types Rev. 20130116 2N2322(A)-2N2329(A) SILICON CONTROLLED RECTFIERS High-reliability discrete products and engineering services since 1977 ELECTRICAL CHARACTERISTICS @ -65°C Symbol Min Typ Max Unit Test Condition Off-state current Characteristics IDRM - 0.05 5.0 µA VDRM = rating, RGK = 1K (2K for “A” types) Reverse current IRRM - 0.05 5.0 µA VRRM = rating, RGK = 1K (2K for “A” types) Gate trigger current “A” types Non “A” types IGT - 50 100 75 350 µA VD = 6V, RL = 100Ω - 0.7 0.75 0.8 0.9 1.0 - - 3.0 Gate trigger voltage “A” types VGT Non “A” types Holding current IH V mA VD = 6V, RGK = 2K, RL = 100Ω VD = 6V, RGK = 2K, RL = 100Ω VD = 6V, RGK = 1K, RL = 100Ω VD = 6V, RGK = 1K (2K for “A” types) MECHANICAL CHARACTERISTICS Case: TO-39 Marking: Body painted, alpha-numeric Pin out: See below Rev. 20130116 High-reliability discrete products and engineering services since 1977 2N2322(A)-2N2329(A) SILICON CONTROLLED RECTFIERS Rev. 20130116