74AUP2GU04-Q100 Low-power dual unbuffered inverter Rev. 1 — 20 October 2014 Product data sheet 1. General description The 74AUP2GU04-Q100 provides two unbuffered inverting gates. This device ensures a very low static and dynamic power consumption across the entire VCC range from 0.8 V to 3.6 V. This product has been qualified to the Automotive Electronics Council (AEC) standard Q100 (Grade 1) and is suitable for use in automotive applications. 2. Features and benefits Automotive product qualification in accordance with AEC-Q100 (Grade 1) Specified from 40 C to +85 C and from 40 C to +125 C Wide supply voltage range from 0.8 V to 3.6 V High noise immunity ESD protection: MIL-STD-883, method 3015 Class 3A. Exceeds 5000 V HBM JESD22-A114F Class 3A. Exceeds 5000 V MM JESD22-A115-A exceeds 200 V (C = 200 pF, R = 0 ) Low static power consumption; ICC = 0.9 A (maximum) Latch-up performance exceeds 100 mA per JESD 78 Class II Inputs accept voltages up to 3.6 V 3. Ordering information Table 1. Ordering information Type number 74AUP2GU04GW-Q100 Package Temperature range Name Description Version 40 C to +125 C SC-88 plastic surface-mounted package; 6 leads SOT363 4. Marking Table 2. Marking Type number Marking code[1] 74AUP2GU04GW-Q100 aD [1] The pin 1 indicator is located on the lower left corner of the device, below the marking code. 74AUP2GU04-Q100 NXP Semiconductors Low-power dual unbuffered inverter 5. Functional diagram $ < 9&& ȍ ȍ $ $ < PQE Fig 1. Logic symbol DDG PQE Fig 2. < IEC logic symbol Fig 3. Logic diagram (one gate) 6. Pinning information 6.1 Pinning $83*84 $ < *1' 9&& $ < DDD Fig 4. Pin configuration SOT363 6.2 Pin description Table 3. Pin description Symbol Pin Description 1A 1 data input GND 2 ground (0 V) 2A 3 data input 2Y 4 data output VCC 5 supply voltage 1Y 6 data output 74AUP2GU04_Q100 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 20 October 2014 © NXP Semiconductors N.V. 2014. All rights reserved. 2 of 15 74AUP2GU04-Q100 NXP Semiconductors Low-power dual unbuffered inverter 7. Functional description Table 4. Function table[1] Input Output nA nY L H H L [1] H = HIGH voltage level; L = LOW voltage level. 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to GND (ground = 0 V). Symbol Parameter VCC supply voltage IIK input clamping current VI input voltage IOK output clamping current VO output voltage IO output current Conditions VI < 0 V [1] VO < 0 V [2] VO = 0 V to VCC Min Max Unit 0.5 +4.6 V 50 - mA 0.5 +4.6 V 50 - mA 0.5 VCC + 0.5 V - 20 mA ICC supply current - 50 mA IGND ground current 50 - mA Tstg storage temperature 65 +150 C - 250 mW total power dissipation Ptot Tamb = 40 C to +125 C [3] [1] The minimum input voltage ratings may be exceeded if the input current ratings are observed. [2] The output voltage ratings may be exceeded if the output current ratings are observed. [3] For SC-88 package: above 87.5 C the value of Ptot derates linearly with 4.0 mW/K. 9. Recommended operating conditions Table 6. Recommended operating conditions Symbol Parameter VCC VI Min Max Unit supply voltage 0.8 3.6 V input voltage 0 3.6 V VO output voltage 0 VCC V Tamb ambient temperature 40 +125 C t/V input transition rise and fall rate 0 200 ns/V 74AUP2GU04_Q100 Product data sheet Conditions VCC = 0.8 V to 3.6 V All information provided in this document is subject to legal disclaimers. Rev. 1 — 20 October 2014 © NXP Semiconductors N.V. 2014. All rights reserved. 3 of 15 74AUP2GU04-Q100 NXP Semiconductors Low-power dual unbuffered inverter 10. Static characteristics Table 7. Static characteristics At recommended operating conditions; voltages are referenced to GND (ground = 0 V). Symbol Parameter Conditions Min Typ Max Unit V Tamb = 25 C VIH HIGH-level input voltage VCC = 0.8 V to 3.6 V 0.75 VCC - - VIL LOW-level input voltage VCC = 0.8 V to 3.6 V - - 0.25 VCC V VOH HIGH-level output voltage VI = GND or VCC IO = 20 A; VCC = 0.8 V to 3.6 V VCC 0.1 - - V IO = 1.1 mA; VCC = 1.1 V 0.75 VCC - - V IO = 1.7 mA; VCC = 1.4 V 1.11 - - V IO = 1.9 mA; VCC = 1.65 V 1.32 - - V IO = 2.3 mA; VCC = 2.3 V 2.05 - - V VOL LOW-level output voltage IO = 3.1 mA; VCC = 2.3 V 1.9 - - V IO = 2.7 mA; VCC = 3.0 V 2.72 - - V IO = 4.0 mA; VCC = 3.0 V 2.6 - - V VI = GND or VCC IO = 20 A; VCC = 0.8 V to 3.6 V - - 0.1 V IO = 1.1 mA; VCC = 1.1 V - - 0.3 VCC V IO = 1.7 mA; VCC = 1.4 V - - 0.31 V IO = 1.9 mA; VCC = 1.65 V - - 0.31 V IO = 2.3 mA; VCC = 2.3 V - - 0.31 V IO = 3.1 mA; VCC = 2.3 V - - 0.44 V IO = 2.7 mA; VCC = 3.0 V - - 0.31 V IO = 4.0 mA; VCC = 3.0 V - - 0.44 V II input leakage current VI = GND to 3.6 V; VCC = 0 V to 3.6 V - - 0.1 A ICC supply current VI = GND or VCC; IO = 0 A; VCC = 0.8 V to 3.6 V - - 0.5 A CI input capacitance VCC = 0 V to 3.6 V; VI = GND or VCC - 1.5 - pF CO output capacitance VO = GND; VCC = 0 V - 1.8 - pF 74AUP2GU04_Q100 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 20 October 2014 © NXP Semiconductors N.V. 2014. All rights reserved. 4 of 15 74AUP2GU04-Q100 NXP Semiconductors Low-power dual unbuffered inverter Table 7. Static characteristics …continued At recommended operating conditions; voltages are referenced to GND (ground = 0 V). Symbol Parameter Conditions Min VCC = 0.8 V to 3.6 V Typ Max Unit 0.75 VCC - - V - - 0.25 VCC V IO = 20 A; VCC = 0.8 V to 3.6 V VCC 0.1 - - V IO = 1.1 mA; VCC = 1.1 V 0.7 VCC - - V IO = 1.7 mA; VCC = 1.4 V 1.03 - - V IO = 1.9 mA; VCC = 1.65 V 1.30 - - V IO = 2.3 mA; VCC = 2.3 V 1.97 - - V IO = 3.1 mA; VCC = 2.3 V 1.85 - - V IO = 2.7 mA; VCC = 3.0 V 2.67 - - V IO = 4.0 mA; VCC = 3.0 V 2.55 - - V IO = 20 A; VCC = 0.8 V to 3.6 V - - 0.1 V IO = 1.1 mA; VCC = 1.1 V - - 0.3 VCC V IO = 1.7 mA; VCC = 1.4 V - - 0.37 V IO = 1.9 mA; VCC = 1.65 V - - 0.35 V IO = 2.3 mA; VCC = 2.3 V - - 0.33 V IO = 3.1 mA; VCC = 2.3 V - - 0.45 V IO = 2.7 mA; VCC = 3.0 V - - 0.33 V IO = 4.0 mA; VCC = 3.0 V - - 0.45 V Tamb = 40 C to +85 C VIH HIGH-level input voltage VIL LOW-level input voltage VCC = 0.8 V to 3.6 V VOH HIGH-level output voltage VI = GND or VCC VOL LOW-level output voltage VI = GND or VCC II input leakage current VI = GND to 3.6 V; VCC = 0 V to 3.6 V - - 0.5 A ICC supply current VI = GND or VCC; IO = 0 A; VCC = 0.8 V to 3.6 V - - 0.9 A VCC = 0.8 V to 3.6 V 0.75 VCC - - V - 0.25 VCC V Tamb = 40 C to +125 C VIH HIGH-level input voltage VIL LOW-level input voltage VCC = 0.8 V to 3.6 V VOH HIGH-level output voltage VI = GND or VCC 74AUP2GU04_Q100 Product data sheet - IO = 20 A; VCC = 0.8 V to 3.6 V VCC 0.11 - - V IO = 1.1 mA; VCC = 1.1 V 0.6 VCC - - V IO = 1.7 mA; VCC = 1.4 V 0.93 - - V IO = 1.9 mA; VCC = 1.65 V 1.17 - - V IO = 2.3 mA; VCC = 2.3 V 1.77 - - V IO = 3.1 mA; VCC = 2.3 V 1.67 - - V IO = 2.7 mA; VCC = 3.0 V 2.40 - - V IO = 4.0 mA; VCC = 3.0 V 2.30 - - V All information provided in this document is subject to legal disclaimers. Rev. 1 — 20 October 2014 © NXP Semiconductors N.V. 2014. All rights reserved. 5 of 15 74AUP2GU04-Q100 NXP Semiconductors Low-power dual unbuffered inverter Table 7. Static characteristics …continued At recommended operating conditions; voltages are referenced to GND (ground = 0 V). Symbol Parameter Conditions VOL VI = GND or VCC LOW-level output voltage Min Typ Max Unit IO = 20 A; VCC = 0.8 V to 3.6 V - - 0.11 V IO = 1.1 mA; VCC = 1.1 V - - 0.33 VCC V IO = 1.7 mA; VCC = 1.4 V - - 0.41 V IO = 1.9 mA; VCC = 1.65 V - - 0.39 V IO = 2.3 mA; VCC = 2.3 V - - 0.36 V IO = 3.1 mA; VCC = 2.3 V - - 0.50 V IO = 2.7 mA; VCC = 3.0 V - - 0.36 V IO = 4.0 mA; VCC = 3.0 V - - 0.50 V II input leakage current VI = GND to 3.6 V; VCC = 0 V to 3.6 V - - 0.75 A ICC supply current VI = GND or VCC; IO = 0 A; VCC = 0.8 V to 3.6 V - - 1.4 A 11. Dynamic characteristics Table 8. Dynamic characteristics Voltages are referenced to GND (ground = 0 V); for test circuit, see Figure 6. Symbol Parameter 25 C Conditions 40 C to +125 C Unit Min Typ[1] Max Min - 6.2 - - - - ns VCC = 1.1 V to 1.3 V 0.9 2.3 4.4 0.9 4.8 5.3 ns VCC = 1.4 V to 1.6 V 0.7 1.7 3.1 0.6 3.4 3.8 ns VCC = 1.65 V to 1.95 V 0.5 1.4 2.6 0.5 2.9 3.2 ns VCC = 2.3 V to 2.7 V 0.4 1.1 2.0 0.4 2.3 2.6 ns VCC = 3.0 V to 3.6 V 0.3 1.0 1.8 0.3 2.1 2.4 ns - 9.6 - - - - ns VCC = 1.1 V to 1.3 V 1.2 3.1 6.1 1.2 6.8 7.5 ns VCC = 1.4 V to 1.6 V 1.0 2.3 4.0 0.9 4.6 5.1 ns VCC = 1.65 V to 1.95 V 0.8 1.9 3.3 0.7 3.8 4.2 ns VCC = 2.3 V to 2.7 V 0.6 1.5 2.7 0.6 3.1 3.5 ns VCC = 3.0 V to 3.6 V 0.5 1.3 2.4 0.5 2.7 3.0 ns Max Max (85 C) (125 C) CL = 5 pF tpd propagation delay nA to nY; see Figure 5 [2] VCC = 0.8 V CL = 10 pF tpd propagation delay nA to nY; see Figure 5 VCC = 0.8 V 74AUP2GU04_Q100 Product data sheet [2] All information provided in this document is subject to legal disclaimers. Rev. 1 — 20 October 2014 © NXP Semiconductors N.V. 2014. All rights reserved. 6 of 15 74AUP2GU04-Q100 NXP Semiconductors Low-power dual unbuffered inverter Table 8. Dynamic characteristics …continued Voltages are referenced to GND (ground = 0 V); for test circuit, see Figure 6. Symbol Parameter 25 C Conditions 40 C to +125 C Unit Min Typ[1] Max Min - 13.0 - - - - ns 1.6 3.8 7.9 1.4 8.8 9.7 ns Max Max (85 C) (125 C) CL = 15 pF tpd propagation delay nA to nY; see Figure 5 [2] VCC = 0.8 V VCC = 1.1 V to 1.3 V VCC = 1.4 V to 1.6 V 1.3 2.8 4.9 1.1 5.7 6.3 ns VCC = 1.65 V to 1.95 V 1.0 2.3 4.0 0.9 4.7 5.2 ns VCC = 2.3 V to 2.7 V 0.8 1.9 3.2 0.8 3.7 4.1 ns VCC = 3.0 V to 3.6 V 0.7 1.6 2.9 0.7 3.3 3.7 ns - 23.2 - - - - ns 2.4 6.0 13.1 2.2 14.8 16.3 ns CL = 30 pF tpd propagation delay nA to nY; see Figure 5 [2] VCC = 0.8 V VCC = 1.1 V to 1.3 V VCC = 1.4 V to 1.6 V 2.0 4.2 7.6 1.8 9.0 9.9 ns VCC = 1.65 V to 1.95 V 1.7 3.6 6.1 1.5 7.2 8.0 ns VCC = 2.3 V to 2.7 V 1.4 2.9 4.8 1.3 5.7 6.3 ns VCC = 3.0 V to 3.6 V 1.2 2.5 4.3 1.1 5.1 5.7 ns VCC = 0.8 V - 1.1 - - - - pF VCC = 1.1 V to 1.3 V - 1.1 - - - - pF CL = 5 pF, 10 pF, 15 pF and 30 pF CPD power dissipation capacitance fi = 1 MHz; VI = GND to VCC [3][4] VCC = 1.4 V to 1.6 V - 1.3 - - - - pF VCC = 1.65 V to 1.95 V - 1.5 - - - - pF VCC = 2.3 V to 2.7 V - 3.0 - - - - pF VCC = 3.0 V to 3.6 V - 4.5 - - - - pF [1] All typical values are measured at nominal VCC. [2] tpd is the same as tPLH and tPHL. [3] All specified values are the average typical values over all stated loads. [4] CPD is used to determine the dynamic power dissipation (PD in W). PD = CPD VCC2 fi N + (CL VCC2 fo) where: fi = input frequency in MHz; fo = output frequency in MHz; CL = load capacitance in pF; VCC = supply voltage in V; N = number of inputs switching; (CL VCC2 fo) = sum of the outputs. 74AUP2GU04_Q100 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 20 October 2014 © NXP Semiconductors N.V. 2014. All rights reserved. 7 of 15 74AUP2GU04-Q100 NXP Semiconductors Low-power dual unbuffered inverter 12. Waveforms 9, 90 Q$LQSXW 90 *1' W 3+/ W 3/+ 92+ 90 Q<RXWSXW 90 92/ PQD Measurement points are given in Table 9. Logic levels: VOL and VOH are typical output voltage drops that occur with the output load. Fig 5. The data input (nA) to output (nY) propagation delays Table 9. Measurement points Supply voltage Output Input VCC VM VM VI tr = tf 0.8 V to 3.6 V 0.5 VCC 0.5 VCC VCC 3.0 ns 9&& 9(;7 Nȍ * 9, 92 '87 &/ 57 5/ DDF Test data is given in Table 10. Definitions for test circuit: RL = Load resistance. CL = Load capacitance including jig and probe capacitance. RT = Termination resistance should be equal to the output impedance Zo of the pulse generator. VEXT = External voltage for measuring switching times. Fig 6. Test circuit for measuring switching times Table 10. Test data Supply voltage Load VCC CL 0.8 V to 3.6 V 5 pF, 10 pF, 15 pF and 30 pF 5 k or 1 M [1] VEXT RL[1] tPLH, tPHL tPZH, tPHZ tPZL, tPLZ open GND 2 VCC For measuring enable and disable times, RL = 5 k. For measuring propagation delays, set-up and hold times and pulse width RL = 1 M. 74AUP2GU04_Q100 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 20 October 2014 © NXP Semiconductors N.V. 2014. All rights reserved. 8 of 15 74AUP2GU04-Q100 NXP Semiconductors Low-power dual unbuffered inverter 13. Additional characteristics 5ELDV Nȍ 9&& ) LQSXW RXWSXW ) 9, I N+] $ ,2 *1' PQD I O g fs = -------V I VO is constant. Fig 7. Test set-up for measuring forward transconductance DDG JIV P$9 9&&9 Tamb = 25 C. Fig 8. Typical forward transconductance as a function of supply voltage 74AUP2GU04_Q100 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 20 October 2014 © NXP Semiconductors N.V. 2014. All rights reserved. 9 of 15 74AUP2GU04-Q100 NXP Semiconductors Low-power dual unbuffered inverter 14. Application information Some applications for the 74AUP2GU04-Q100 are: • Linear amplifier (see Figure 9) • Crystal oscillator (see Figure 10) Remark: All values given are typical values unless otherwise specified. 5 9&& ) 5 8 =/ PQD ZL > 10 k. R1 3 k. R2 1 M. Open loop amplification: AOL = 20. A OL R1 1 + ------- 1 + A OL R2 Voltage amplification: A V = – ----------------------------------------- . Vo(p-p) = VCC 1.5 V centered at 0.5 VCC. Unity gain bandwidth product is 5 MHz. Fig 9. Linear amplifier application 5 5 8 & & RXW PQD C1 = 47 pF. C2 = 22 pF. R1 = 1 M to 10 M. R2 optimum value depends on the frequency and required stability against changes in VCC or average minimum ICC (ICC = 2 mA at VCC = 3.3 V and f = 10 MHz). Fig 10. Crystal oscillator application 74AUP2GU04_Q100 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 20 October 2014 © NXP Semiconductors N.V. 2014. All rights reserved. 10 of 15 74AUP2GU04-Q100 NXP Semiconductors Low-power dual unbuffered inverter 15. Package outline 3ODVWLFVXUIDFHPRXQWHGSDFNDJHOHDGV 627 ' % $ ( \ ; +( Y 0 $ 4 SLQ LQGH[ $ $ H ES F /S Z 0 % H GHWDLO; PP VFDOH ',0(16,216PPDUHWKHRULJLQDOGLPHQVLRQV 81,7 $ $ PD[ ES F ' ( H H +( /S 4 Y Z \ PP 287/,1( 9(56,21 5()(5(1&(6 ,(& -('(& -(,7$ 6& 627 (8523($1 352-(&7,21 ,668('$7( Fig 11. Package outline SOT363 (SC-88) 74AUP2GU04_Q100 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 20 October 2014 © NXP Semiconductors N.V. 2014. All rights reserved. 11 of 15 74AUP2GU04-Q100 NXP Semiconductors Low-power dual unbuffered inverter 16. Abbreviations Table 11. Abbreviations Acronym Description CDM Charged Device Model DUT Device Under Test ESD ElectroStatic Discharge HBM Human Body Model MIL Military MM Machine Model 17. Revision history Table 12. Revision history Document ID Release date Data sheet status Change notice Supersedes 74AUP2GU04_Q100 v.1 20141020 Product data sheet - - 74AUP2GU04_Q100 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 20 October 2014 © NXP Semiconductors N.V. 2014. All rights reserved. 12 of 15 74AUP2GU04-Q100 NXP Semiconductors Low-power dual unbuffered inverter 18. Legal information 18.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 18.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. Product specification — The information and data provided in a Product data sheet shall define the specification of the product as agreed between NXP Semiconductors and its customer, unless NXP Semiconductors and customer have explicitly agreed otherwise in writing. In no event however, shall an agreement be valid in which the NXP Semiconductors product is deemed to offer functions and qualities beyond those described in the Product data sheet. 18.3 Disclaimers Limited warranty and liability — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. NXP Semiconductors takes no responsibility for the content in this document if provided by an information source outside of NXP Semiconductors. In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. Notwithstanding any damages that customer might incur for any reason whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of NXP Semiconductors. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. 74AUP2GU04_Q100 Product data sheet Suitability for use in automotive applications — This NXP Semiconductors product has been qualified for use in automotive applications. Unless otherwise agreed in writing, the product is not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors and its suppliers accept no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer's own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Customers are responsible for the design and operation of their applications and products using NXP Semiconductors products, and NXP Semiconductors accepts no liability for any assistance with applications or customer product design. It is customer’s sole responsibility to determine whether the NXP Semiconductors product is suitable and fit for the customer’s applications and products planned, as well as for the planned application and use of customer’s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. NXP Semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s third party customer(s). Customer is responsible for doing all necessary testing for the customer’s applications and products using NXP Semiconductors products in order to avoid a default of the applications and the products or of the application or use by customer’s third party customer(s). NXP does not accept any liability in this respect. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Terms and conditions of commercial sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of NXP Semiconductors products by customer. All information provided in this document is subject to legal disclaimers. Rev. 1 — 20 October 2014 © NXP Semiconductors N.V. 2014. All rights reserved. 13 of 15 74AUP2GU04-Q100 NXP Semiconductors Low-power dual unbuffered inverter No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Translations — A non-English (translated) version of a document is for reference only. The English version shall prevail in case of any discrepancy between the translated and English versions. Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from competent authorities. 18.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 19. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] 74AUP2GU04_Q100 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 20 October 2014 © NXP Semiconductors N.V. 2014. All rights reserved. 14 of 15 NXP Semiconductors 74AUP2GU04-Q100 Low-power dual unbuffered inverter 20. Contents 1 2 3 4 5 6 6.1 6.2 7 8 9 10 11 12 13 14 15 16 17 18 18.1 18.2 18.3 18.4 19 20 General description . . . . . . . . . . . . . . . . . . . . . . 1 Features and benefits . . . . . . . . . . . . . . . . . . . . 1 Ordering information . . . . . . . . . . . . . . . . . . . . . 1 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Functional diagram . . . . . . . . . . . . . . . . . . . . . . 2 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Pinning . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Pin description . . . . . . . . . . . . . . . . . . . . . . . . . 2 Functional description . . . . . . . . . . . . . . . . . . . 3 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3 Recommended operating conditions. . . . . . . . 3 Static characteristics. . . . . . . . . . . . . . . . . . . . . 4 Dynamic characteristics . . . . . . . . . . . . . . . . . . 6 Waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Additional characteristics . . . . . . . . . . . . . . . . . 9 Application information. . . . . . . . . . . . . . . . . . 10 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 11 Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 12 Legal information. . . . . . . . . . . . . . . . . . . . . . . 13 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 13 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Contact information. . . . . . . . . . . . . . . . . . . . . 14 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP Semiconductors N.V. 2014. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 20 October 2014 Document identifier: 74AUP2GU04_Q100