IDH16S60C Data Sheet (555 KB, EN)

IDH16S60C
2ndGeneration thinQ!TM SiC Schottky Diode
Product Summary
Features
• Revolutionary semiconductor material - Silicon Carbide
• Switching behavior benchmark
• No reverse recovery/ No forward recovery
VDC
600
V
Qc
38
nC
IF
16
A
• No temperature influence on the switching behavior
• High surge current capability
• Pb-free lead plating; RoHS compliant
• Qualified according to JEDEC1) for target applications
• Breakdown voltage tested at 5mA2)
thinQ! 2G Diode specially designed for fast switching applications like:
• CCM PFC
• Motor Drives
Type
Package
Marking
Pin 1
Pin 2
IDH16S60C
PG-TO220-2
D16S60C
C
A
Maximum ratings, at T j=25 °C, unless otherwise specified
Value
Parameter
Symbol Conditions
Continuous forward current
IF
T C<140 °C
16
RMS forward current
I F,RMS
f =50 Hz
23
T C=25 °C, t p=10 ms
118
Surge non-repetitive forward current,
I F,SM
sine halfwave
Unit
A
Repetitive peak forward current
I F,RM
T j=150 °C,
T C=100 °C, D =0.1
64
Non-repetitive peak forward current
I F,max
T C=25 °C, t p=10 µs
528
i ²t value
∫i 2dt
T C=25 °C, t p=10 ms
69
A2s
Repetitive peak reverse voltage
V RRM
600
V
Diode dv/dt ruggedness
dv/ dt
V R = 0….480V
50
V/ns
Power dissipation
P tot
T C=25 °C
136
W
Operating and storage temperature
T j, T stg
-55 ... 175
°C
Mounting torque
Soldering temperature,
wavesoldering only allowed at leads
Rev. 2.1
T sold
M3 and M3.5 screws
60
Mcm
1.6mm (0.063 in.)
from case for 10s
260
°C
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IDH16S60C
Parameter
Values
Symbol Conditions
Unit
min.
typ.
max.
-
-
1.1
-
-
62
600
-
-
Thermal characteristics
Thermal resistance, junction - case
R thJC
Thermal resistance,
junction - ambient
R thJA
leaded
K/W
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
DC blocking voltage
V DC
I R=0.2 mA
Diode forward voltage
VF
I F=16 A, T j=25 °C
-
1.5
1.7
I F=16 A, T j=150 °C
-
1.7
2.1
V R=600 V, T j=25 °C
-
2
200
V R=600 V, T j=150 °C
-
10
2000
-
38
-
nC
-
-
<10
ns
pF
Reverse current
IR
V
µA
AC characteristics
Total capacitive charge
Qc
Switching time3)
tc
V R=400 V,I F≤I F,max,
di F/dt =200 A/µs,
T j=150 °C
C
V R=1 V, f = MHz
-
650
-
V R=300 V, f =1 MHz
-
100
-
V R=600 V, f =1 MHz
-
100
-
1)
J-STD20 and JESD22
2)
All devices tested under avalanche conditions, for a time periode of 5ms, at 5mA.
3)
tc is the time constant for the capacitive displacement current waveform (independent from T j, ILOAD and
di/dt), different from trr, which is dependent on Tj, ILOAD, di/dt. No reverse recovery time constant trr due to
absence of minority carrier injection.
4)
Only capacitive charge occuring, guaranteed by design.
Rev. 2.1
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IDH16S60C
2 Diode forward current
P tot=f(T C)
I F=f(T C); T j≤175 °C
parameter: RthJC(max)
parameter: R thJC(max); V F(max)
140
35
120
30
100
25
80
20
IF [A]
Ptot [W]
1 Power dissipation
60
15
40
10
20
5
0
0
25
50
75
100
125
150
175
200
25
50
75
TC [°C]
100
125
150
175
200
TC [°C]
3 Typ. forward characteristic
4 Typ. forward characteristic in surge current
I F=f(V F); t p=400 µs
mode
parameter: T j
I F=f(V F); t p=400 µs; parameter: Tj
160
25
100 °C
25 °C
175 °C
-55 °C
-55 °C
150 °C
20
175 °C
120
IF [A]
IF [A]
15
80
25 °C
10
100 °C
40
5
150 °C
0
0
0
1
2
3
VF [V]
Rev. 2.1
0
100 °C 150 °C
page 3
2
4
6
8
VF [V]
2013-02-12
IDH16S60C
5 Typ. forward power dissipation vs.
6 Typ. reverse current vs. reverse voltage
average forward current
I R=f(V R)
P F,AV=f(I F), T C=100 °C, parameter: D =t p/T
parameter: T j
60
101
0.1
0.5
1
0.2
50
100
10-1
175 °C
IR [µA]
PF(AV) [W]
40
30
150 °C
10-2
100 °C
20
25 °C
10-3
10
100
200
300
400
500
600
-55 °C
0
0
5
10
15
20
25
IF(AV) [A]
VR [V]
7 Transient thermal impedance
8 Typ. capacitance vs. reverse voltage
Z thJC=f(t p)
C =f(V R); T C=25 °C, f =1 MHz
parameter: D =t p/T
101
800
700
100
600
0.5
500
0.1
10-1
C [pF]
ZthJC [K/W]
0.2
0.05
0.02
300
single pulse
10-2
400
200
100
10-3
0
10-5
10-4
10-3
10-2
10-1
t [s]
Rev. 2.1
10-1
100
101
102
103
VR [V]
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IDH16S60C
9 Typ. C stored energy
10 Typ. capacitance charge vs. current slope
E C=f(V R)
Q C=f(di F/dt )4); T j=150 °C; I F≤I F,max
40
20
16
30
Ec [µJ]
Qc [nC]
12
20
8
10
4
0
0
0
200
400
600
VR [V]
Rev. 2.1
100
400
700
1000
diF/dt [A/µs]
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IDH16S60C
PG-TO220-2: Outline
38
Dimensions in mm/inches
Rev. 2.1
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2013-02-12
IDH16S60C
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2012 Infineon Technologies AG
All Rights Reserved.
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The information given in this document shall in no event be regarded as a guarantee of
conditions or characteristics. With respect to any examples or hints given herein, any typical
values stated herein and/or any information regarding the application of the device,
Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,
including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
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contact the nearest Infineon Technologies Office (www.infineon.com).
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on the types in question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems
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reasonably be expected to cause the failure of that life-support , automotive, aviation and
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Life support systems are intended to be implanted in the human body and/or maintain
and sustain and/or protect human life. If they fail, it is reasonable to assume that the health
of the user or other persons may be endangered.
Rev. 2.1
page 7
2013-02-12