IDH12S60C 2ndGeneration thinQ!TM SiC Schottky Diode Product Summary Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark • No reverse recovery/ No forward recovery VDC 600 V Qc 30 nC IF 12 A • No temperature influence on the switching behavior • High surge current capability • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target applications • Breakdown voltage tested at 5mA2) thinQ! 2G Diode specially designed for fast switching applications like: • CCM PFC • Motor Drives Type Package Marking Pin 1 Pin 2 IDH12S60C PG-TO220-2 D12S60C C A Maximum ratings, at T j=25 °C, unless otherwise specified Value Parameter Symbol Conditions Continuous forward current IF T C<140 °C 12 RMS forward current I F,RMS f =50 Hz 18 T C=25 °C, t p=10 ms 98 Surge non-repetitive forward current, I F,SM sine halfwave Unit A Repetitive peak forward current I F,RM T j=150 °C, T C=100 °C, D =0.1 49 Non-repetitive peak forward current I F,max T C=25 °C, t p=10 µs 410 i ²t value ∫i 2dt T C=25 °C, t p=10 ms 48 A2s Repetitive peak reverse voltage V RRM 600 V Diode dv/dt ruggedness dv/ dt V R = 0….480V 50 V/ns Power dissipation P tot T C=25 °C 115 W Operating and storage temperature T j, T stg -55 ... 175 °C Mounting torque Soldering temperature, wavesoldering only allowed at leads Rev. 2.1 T sold M3 and M3.5 screws 60 Mcm 1.6mm (0.063 in.) from case for 10s 260 °C page 1 2013-02-12 IDH12S60C Parameter Values Symbol Conditions Unit min. typ. max. - - 1.3 - - 62 600 - - Thermal characteristics Thermal resistance, junction - case R thJC Thermal resistance, junction - ambient R thJA leaded K/W Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics DC blocking voltage V DC I R=0.16 mA Diode forward voltage VF I F=12 A, T j=25 °C - 1.5 1.7 I F=12 A, T j=150 °C - 1.7 2.1 V R=600 V, T j=25 °C - 1.6 160 V R=600 V, T j=150 °C - 6 1600 - 30 - nC - - <10 ns pF Reverse current IR V µA AC characteristics Total capacitive charge Qc Switching time3) tc V R=400 V,I F≤I F,max, di F/dt =200 A/µs, T j=150 °C C V R=1 V, f = MHz - 530 - V R=300 V, f =1 MHz - 70 - V R=600 V, f =1 MHz - 70 - 1) J-STD20 and JESD22 2) All devices tested under avalanche conditions, for a time periode of 5ms, at 5mA. 3) tc is the time constant for the capacitive displacement current waveform (independent from T j, ILOAD and di/dt), different from trr, which is dependent on Tj, ILOAD, di/dt. No reverse recovery time constant trr due to absence of minority carrier injection. 4) Only capacitive charge occuring, guaranteed by design. Rev. 2.1 page 2 2013-02-12 IDH12S60C 1 Power dissipation 2 Diode forward current P tot=f(T C) I F=f(T C); T j≤175 °C parameter: RthJC(max) parameter: R thJC(max); V F(max) 120 35 30 100 25 20 IF [A] Ptot [W] 80 60 15 40 10 20 5 0 0 25 50 75 100 125 150 175 200 25 50 75 TC [°C] 100 125 150 175 TC [°C] 3 Typ. forward characteristic 4 Typ. forward characteristic in surge current I F=f(V F); t p=400 µs mode parameter: T j I F=f(V F); t p=400 µs; parameter: Tj 40 140 -55 °C 25 °C 150 °C 175 °C 120 100 °C 30 150 °C 100 80 25 °C IF [A] IF [A] 200 20 60 -55 °C 40 100 °C 175 °C 10 20 0 0 0 1 2 3 4 VF [V] Rev. 2.1 0 1 2 3 4 5 6 7 VF [V] page 3 2013-02-12 IDH12S60C 5 Typ. forward power dissipation vs. 6 Typ. reverse current vs. reverse voltage average forward current I R=f(V R) P F,AV=f(I F), T C=100 °C, parameter: D =t p/T parameter: T j 60 102 0.1 0.2 0.5 1 50 101 100 IR [µA] PF(AV) [W] 40 30 175 °C 10-1 20 150 °C 100 °C 10-2 10 25 °C -55 °C 0 10-3 0 5 10 15 20 25 30 35 100 200 IF(AV) [A] 300 400 500 600 VR [V] 7 Transient thermal impedance 8 Typ. capacitance vs. reverse voltage Z thJC=f(t p) C =f(V R); T C=25 °C, f =1 MHz parameter: D =t p/T 101 700 600 500 100 ZthJC [K/W] 0.5 C [pF] 400 0.2 0.1 300 0.05 10-1 200 0.02 0.01 100 single pulse 10-2 0 10-5 10-4 10-3 10-2 10-1 100 tP [s] Rev. 2.1 10-1 100 101 102 103 VR[V] page 4 2013-02-12 IDH12S60C 9 Typ. C stored energy 10 Typ. capacitance charge vs. current slope E C=f(V R) Q C=f(di F/dt )4); T j=150 °C; I F≤I F,max 15 40 30 Qc [nC] Ec [µC] 10 20 5 10 0 0 200 400 600 VR [V] Rev. 2.1 0 100 400 700 1000 diF/dt [A/µs] page 5 2013-02-12 IDH12S60C PG-TO220-2: Outline Dimensions in mm/inches Rev. 2.1 page 6 2013-02-12 IDH12S60C Published by Infineon Technologies AG 81726 Munich, Germany © 2012 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems and/or automotive, aviation and aerospace applications or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support , automotive, aviation and aerospace device or system or to affect the safety or effectiveness of that device or system. Life support systems are intended to be implanted in the human body and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 2.1 page 7 2013-02-12