IDH04S60C Data Sheet (551 KB, EN)

IDH04S60C
2ndGeneration thinQ!TM SiC Schottky Diode
Product Summary
Features
• Revolutionary semiconductor material - Silicon Carbide
• Switching behavior benchmark
• No reverse recovery/ No forward recovery
VDC
600
V
Qc
8
nC
IF
4
A
• No temperature influence on the switching behavior
• High surge current capability
• Pb-free lead plating; RoHS compliant
• Qualified according to JEDEC1) for target applications
• Breakdown voltage tested at 5mA2)
thinQ! 2G Diode specially designed for fast switching applications like:
• CCM PFC
• Motor Drives
Type
Package
Marking
Pin 1
Pin 2
IDH04S60C
PG-TO220-2
D04S60C
C
A
Maximum ratings, at T j=25 °C, unless otherwise specified
Value
Parameter
Symbol Conditions
Continuous forward current
IF
T C<140 °C
RMS forward current
I F,RMS
f =50 Hz
5.6
T C=25 °C, t p=10 ms
32
reasonably be expected to cause the
I F,SM
failure of that life-support ,
automotive, aviation and
4
Unit
A
T j=150 °C,
Life support systems are intended to beI F,RM
implanted in the human body and/or maintain18
T C=100 °C, D =0.1
T Cit=25
°C, t p=10 µs
and sustain and/or protect human life. IIfF,max
they fail,
is reasonable
to assume that the132
health
V RRM
of the user or other persons may be endangered.
600
V
Diode dv/dt ruggedness
dv/ dt
V R = 0….480V
50
V/ns
Power dissipation
P tot
T C=25 °C
42
W
Operating and storage temperature
T j, T stg
-55 ... 175
°C
Mounting torque
Soldering temperature,
wavesoldering only allowed at leads
Rev. 2.1
T sold
M3 and M3.5 screws
60
Mcm
1.6mm (0.063 in.)
from case for 10s
260
°C
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IDH04S60C
Parameter
Values
Symbol Conditions
Unit
min.
typ.
max.
-
-
3.6
-
-
62
600
-
-
Thermal characteristics
Thermal resistance, junction - case
R thJC
Thermal resistance,
junction - ambient
R thJA
leaded
K/W
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
DC blocking voltage
V DC
I R=0.05 mA
Diode forward voltage
VF
I F=4 A, T j=25 °C
-
1.7
1.9
I F=4 A, T j=150 °C
-
2
2.4
V R=600 V, T j=25 °C
-
0.5
50
V R=600 V, T j=150 °C
-
2
500
Reverse current
IR
V
µA
Infineon Technologies components may be used in life-support devices or systems
and/or automotive, aviation and aerospace applications or systems only with
Q c of that life-support , automotive,-aviation and
reasonably be expected to cause the failure
8
V R=400 V,I F≤I F,max,
di For
/dteffectiveness
=200 A/µs, of that device or system.
aerospace device or system or to affect the safety
T j=150 °C
Life support systems are intended to bet cimplanted in the human body and/or- maintain <10
nC
V itR=1
V, f = MHz to assume- that the130
and sustain and/or protect human life. CIf they fail,
is reasonable
health
-
pF
of the user or other persons may be endangered.
-
V R=600 V, f =1 MHz
-
1)
J-STD20 and JESD22
2)
All devices tested under avalanche conditions, for a time periode of 5ms, at 5mA.
20
ns
3)
tc is the time constant for the capacitive displacement current waveform (independent from T j, ILOAD and
di/dt), different from trr, which is dependent on Tj, ILOAD, di/dt. No reverse recovery time constant trr due to
absence of minority carrier injection.
4)
Only capacitive charge occuring, guaranteed by design.
Rev. 2.1
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IDH04S60C
1 Power dissipation
2 Diode forward current
P tot=f(T C)
I F=f(T C); T j≤175 °C
parameter: RthJC(max)
parameter: R thJC(max); V F(max)
45
10
40
9
8
35
7
30
IF [A]
Ptot [W]
6
25
20
5
4
15
3
10
2
5
1
0
0
25
50
75
100
125
150
175
200
25
50
75
100
TC [°C]
125
150
175
200
TC [°C]
3 Typ. forward characteristic
4 Typ. forward characteristic in surge current
I F=f(V F); t p=400 µs
mode
parameter: T j
I F=f(V F); t p=400 µs; parameter: Tj
8
40
-55ºC
175ºC
150ºC
150ºC
25ºC
7
100ºC
IF
30
IF
6
IF [A]
IF [A]
5
4
3
-55ºC
20
175ºC
25ºC
2
10
100ºC
1
0
0
0
1
2
3
4
VF[V]
Rev. 2.1
0
2
4
6
8
10
VF[V]
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IDH04S60C
5 Typ. forward power dissipation vs.
6 Typ. reverse current vs. reverse voltage
average forward current
I R=f(V R)
P F,AV=f(I F), T C=100 °C, parameter: D =t p/T
parameter: T j
101
20
0.1
0.5
0.2
1
18
100
16
14
175 °C
10-1
150 °C
IR [µA]
PF(AV) [W]
12
10
100 °C
10-2
8
25 °C
-55 °C
6
10-3
4
2
10-4
0
0
2
4
6
100
8
200
IF(AV) [A]
300
400
500
600
VR [V]
7 Transient thermal impedance
8 Typ. capacitance vs. reverse voltage
Z thJC=f(t p)
C =f(V R); T C=25 °C, f =1 MHz
parameter: D =t p/T
101
200
175
0.5
150
100
125
ZthJC [K/W]
0.2
C [pF]
0.1
0.05
100
75
10-1
0.02
50
25
single pulse
10-2
0
10-5
10-4
10-3
10-2
10-1
tP [s]
Rev. 2.1
10-1
100
101
102
103
VR [V]
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IDH04S60C
9 Typ. C stored energy
10 Typ. capacitance charge vs. current slope
E C=f(V R)
Q C=f(di F/dt )4); T j=150 °C; I F≤I F,max
3.5
10
3.0
8
6
2.0
Qc [nC]
Ec [µC]
2.5
1.5
4
1.0
2
0.5
0.0
0
0
200
400
600
VR [V]
Rev. 2.1
100
400
700
1000
diF/dt [A/µs]
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IDH04S60C
PG-TO220-2: Outline
Infineon Technologies components may be used in life-support devices or systems
and/or automotive, aviation and aerospace applications or systems only with
reasonably be expected to cause the failure of that life-support , automotive, aviation and
aerospace device or system or to affect the safety or effectiveness of that device or system.
Life support systems are intended to be implanted in the human body and/or maintain
and sustain and/or protect human life. If they fail, it is reasonable to assume that the health
of the user or other persons may be endangered.
Dimensions in mm/inches
Rev. 2.1
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2013-02-12
IDH04S60C
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2008 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of
conditions or characteristics. With respect to any examples or hints given herein, any typical
values stated herein and/or any information regarding the application of the device,
Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,
including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please
contact the nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information
on the types in question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems
and/or automotive, aviation and aerospace applications or systems only with
the express written approval of Infineon Technologies, if a failure of such components can
reasonably be expected to cause the failure of that life-support , automotive, aviation and
aerospace device or system or to affect the safety or effectiveness of that device or system.
Life support systems are intended to be implanted in the human body and/or maintain
and sustain and/or protect human life. If they fail, it is reasonable to assume that the health
of the user or other persons may be endangered.
Rev. 2.1
page 7
2013-02-12