INTERSIL 5962R9671901TXC

ACTS245T
Data Sheet
July 1999
Radiation Hardened Octal Non-Inverting
Bidirectional Bus Transceiver
Intersil’s Satellite Applications FlowTM (SAF) devices are fully
tested and guaranteed to 100kRAD Total Dose. These QML
Class T devices are processed to a standard flow intended
to meet the cost and shorter lead-time needs of large
volume satellite manufacturers, while maintaining a high
level of reliability.
The Intersil ACTS245T is a Radiation Hardened Octal NonInverting Bidirectional Bus Transceiver intended for two-way
asynchronous communication between data busses.
File Number
4611.1
Features
• QML Class T, Per MIL-PRF-38535
• Radiation Performance
- Gamma Dose (γ) 1 x 105 RAD(Si)
- Latch-Up Free Under Any Conditions
- Single Event Upset (SEU) Immunity: <1 x 10-10
Errors/Bit/Day (Typ)
- SEU LET Threshold . . . . . . . . . . . . .>100 MEV-cm2/mg
• 1.25 Micron Radiation Hardened SOS CMOS
• Significant Power Reduction Compared to ALSTTL Logic
Specifications
• DC Operating Voltage Range . . . . . . . . . . . . 4.5V to 5.5V
Specifications for Rad Hard QML devices are controlled by
the Defense Supply Center in Columbus (DSCC). The SMD
numbers listed below must be used when ordering.
• Input Logic Levels
- VIL = 0.8V Max
- VIH = VCC/2 Min
Detailed Electrical Specifications for the ACTS245T are
contained in SMD 5962-96719. A “hot-link” is provided from
our website for downloading.
www.intersil.com/spacedefense/newsafclasst.asp
• Fast Propagation Delay . . . . . . . . 18ns (Max), 12ns (Typ)
Pinouts
ACTS245T (SBDIP), CDIP2-T20
TOP VIEW
Intersil’s Quality Management Plan (QM Plan), listing all
Class T screening operations, is also available on our
website.
www.intersil.com/quality/manuals.asp
DIR
1
A0
2
19 OE
A1
3
18 B0
A2
4
17 B1
A3
5
16 B2
TEMP.
RANGE
(oC)
A4
6
15 B3
A5
7
14 B4
A6
8
13 B5
-55 to 125
A7
9
12 B6
GND 10
11 B7
Ordering Information
ORDERING
NUMBER
5962R9671901TRC
5962R9671901TXC
PART
NUMBER
ACTS245DTR
ACTS245KTR
-55 to 125
NOTE: Minimum order quantity for -T is 150 units through
distribution, or 450 units direct.
ACTS245T (FLATPACK), CDFP4-F20
TOP VIEW
DIR
1
20
VCC
A0
2
19
OE
A1
3
18
B0
A2
4
17
B1
A3
5
16
B2
A4
6
15
B3
A5
7
14
B4
A6
8
13
B5
A7
9
12
B6
10
11
B7
GND
1
20 VCC
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999
ACTS245T
Functional Diagram
NOTE: (1 of 8)
P
N
A
B
P
N
OE
DIR
TRUTH TABLE
INPUTS
OE
DIR
OPERATION
L
L
B Data to A Bus
L
H
A Data to B Bus
H
X
Isolation
NOTE:
H = High Voltage Level, L = Low Voltage Level, X = Immaterial.
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ACTS245T
Die Characteristics
DIE DIMENSIONS:
BACKSIDE FINISH:
(2440µm x 2970µm x 533µm ±51µm)
Sapphire
96 x 117 x 21mils ±2mil
PASSIVATION:
METALLIZATION:
Type: Silox (SiO2)
Thickness: 8.0kÅ ±1.0kÅ
Type: Al Si Cu
Thickness: 10.0kÅ ±2kÅ
WORST CASE CURRENT DENSITY:
< 2.0e5 A/cm2
SUBSTRATE POTENTIAL:
Unbiased (Silicon on Sapphire)
TRANSISTOR COUNT:
Bond Pad #20 (VCC) First
420
Bond Pad #20 (VCC) Uses Two Bond Wires
PROCESS:
Bond Pad #10 (GND) Uses Two Bond Wires
CMOS SOS
Metallization Mask Layout
ACTS245T
DIR
(1)
A0
(2)
VCC
(20)
VCC
(20)
OE
(19)
A1 (3)
(18) B0
A2 (4)
(17) B1
A3 (5)
(16) B2
A4 (6)
(15) B3
A5 (7)
(14) B4
A6 (8)
(13) B5
(9)
A7
(10)
GND
(10)
GND
(11)
B7
(12)
B6
All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.
Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site http://www.intersil.com
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