INTERSIL HS1-303RH-T

HS-303RH-T
Data Sheet
July 1999
Radiation Hardened
CMOS Dual SPDT Analog Switch
• QML Class T, Per MIL-PRF-38535
The HS-303RH-T analog switch is a monolithic device
fabricated using Radiation Hardened CMOS technology and
the Intersil dielectric isolation process for latch-up free
operation. Improved total dose hardness is obtained by
layout (thin oxide tabs extending to a channel stop) and
processing (hardened gate oxide). This switch offers lowresistance switching performance for analog voltages up to
the supply rails. “ON” resistance is low and stays reasonably
constant over the full range of operating voltage and current.
“ON” resistance also stays reasonably constant when
exposed to radiation, being typically 30Ω pre-rad and 35Ω
post 100kRAD(Si). Break-before-make switching is
controlled by 5V digital inputs.
• Radiation Performance
- Gamma Dose (γ) 1 x 105 RAD(Si)
• No Latch-Up, Dielectrically Isolated Device Islands
• Pin for Pin Compatible with Intersil HI-303 Series Analog
Switches
• Analog Signal Range 15V
• Low Leakage . . . . . . . . . . . . . . . . 100nA (Max, Post Rad)
• Low rON . . . . . . . . . . . . . . . . . . . . . . 60Ω (Max, Post Rad)
• Low Operating Power . . . . . . . . . . 100µA (Max, Post Rad)
Pinouts
HS1-303RH-T (SBDIP), CDIP2-T14
TOP VIEW
Specifications
Specifications for Rad Hard QML devices are controlled by
the Defense Supply Center in Columbus (DSCC). The SMD
numbers listed below must be used when ordering.
Detailed Electrical Specifications for the HS-303RH-T
are contained in SMD 5962-95813. A “hot-link” is provided
from our website for downloading.
www.intersil.com/spacedefense/newsafclasst.asp
Intersil’s Quality Management Plan (QM Plan), listing all
Class T screening operations, is also available on our
website.
www.intersil.com/quality/manuals.asp
Ordering Information
NC
S3
D3
S1
TEMP.
RANGE
(oC)
5962R9581301TCC
HS1-303RH-T
-55 to 125
5962R9581304TXC
HS9-303RH-T
-55 to 125
NC
1
14 V+
S3
2
13 S4
D3
3
12 D4
D1
4
11 D2
S1
5
10 S2
IN1
6
9 IN2
GND
7
8 V-
HS9-303RH-T (FLATPACK) CDFP3-F14
TOP VIEW
D1
PART
NUMBER
4602.1
Features
Intersil’s Satellite Applications FlowTM (SAF) devices are fully
tested and guaranteed to 100kRAD Total Dose. These QML
Class T devices are processed to a standard flow intended
to meet the cost and shorter lead-time needs of large
volume satellite manufacturers, while maintaining a high
level of reliability.
ORDERING
NUMBER
File Number
IN1
GND
1
14
2
13
3
12
4
11
5
10
6
9
7
8
V+
S4
D4
D2
S2
IN2
V-
NOTE: Minimum order quantity for -T is 150 units through
distribution, or 450 units direct.
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CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999
Satellite Applications Flow™ (SAF) is a trademark of Intersil Corporation.
HS-303RH-T
Functional Diagram
SBDIP TRUTH TABLE
N
IN
P
D
LOGIC
SW1AND SW2
SW3 AND SW4
0
OFF
ON
1
ON
OFF
Die Characteristics
DIE DIMENSIONS:
PASSIVATION:
(2130µm x 1930µm x 279µm ±25.4µm)
84 x 76 x 11mils ±1mil
Type: Silox (SiO2)
Thickness: 8kÅ ±1kÅ
WORST CASE CURRENT DENSITY:
METALLIZATION:
< 2.0e5 A/cm2
Type: Al
Thickness: 12.5kÅ ±2kÅ
TRANSISTOR COUNT:
SUBSTRATE POTENTIAL:
76
Unbiased (DI)
PROCESS:
BACKSIDE FINISH:
Metal Gate CMOS, Dielectric Isolation
Gold
Metallization Mask Layout
S4
S3
V+
HS-303RH-T
D2
S1
S2
IN1
IN2
V-
D1
GND
D4
NC
D3
All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.
Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site http://www.intersil.com
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