IDH05S60C Data Sheet (555 KB, EN)

IDH05S60C
2ndGeneration thinQ!TM SiC Schottky Diode
Product Summary
Features
• Revolutionary semiconductor material - Silicon Carbide
• Switching behavior benchmark
• No reverse recovery/ No forward recovery
VDC
600
V
Qc
12
nC
IF
5
A
• No temperature influence on the switching behavior
• High surge current capability
• Pb-free lead plating; RoHS compliant
• Qualified according to JEDEC1) for target applications
• Breakdown voltage tested at 5mA2)
thinQ! 2G Diode specially designed for fast switching applications like:
• CCM PFC
• Motor Drives
Type
Package
Marking
Pin 1
Pin 2
IDH05S60C
PG-TO220-2
D05S60C
C
A
Maximum ratings, at T j=25 °C, unless otherwise specified
Value
Parameter
Symbol Conditions
Continuous forward current
IF
T C<140 °C
RMS forward current
I F,RMS
f =50 Hz
7.5
T C=25 °C, t p=10 ms
42
Surge non-repetitive forward current,
I F,SM
sine halfwave
5
Repetitive peak forward current
I F,RM
T j=150 °C,
T C=100 °C, D =0.1
21
Non-repetitive peak forward current
I F,max
T C=25 °C, t p=10 µs
180
i ²t value
∫i 2dt
T C=25 °C, t p=10 ms
9
Repetitive peak reverse voltage
V RRM
Diode dv/dt ruggedness
dv/ dt
Power dissipation
P tot
Operating and storage temperature
T j, T stg
Mounting torque
Soldering temperature,
wavesoldering only allowed at leads
Rev. 2.1
T sold
Unit
A
A2s
600
V
V R = 0….480V
50
V/ns
T C=25 °C
55
W
-55 ... 175
°C
M3 and M3.5 screws
60
Mcm
1.6mm (0.063 in.)
from case for 10s
260
°C
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IDH05S60C
Parameter
Values
Symbol Conditions
Unit
min.
typ.
max.
-
-
2.7
-
-
62
600
-
-
Thermal characteristics
Thermal resistance, junction - case
R thJC
Thermal resistance,
junction - ambient
R thJA
leaded
K/W
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
DC blocking voltage
V DC
I R=0.07 mA
Diode forward voltage
VF
I F=5 A, T j=25 °C
-
1.5
1.7
I F=5 A, T j=150 °C
-
1.7
2.1
V R=600 V, T j=25 °C
-
0.6
70
V R=600 V, T j=150 °C
-
2.5
700
-
12
-
nC
-
-
<10
ns
pF
Reverse current
IR
V
µA
AC characteristics
Total capacitive charge
Qc
Switching time3)
tc
V R=400 V,I F≤I F,max,
di F/dt =200 A/µs,
T j=150 °C
C
V R=1 V, f = MHz
-
240
-
V R=300 V, f =1 MHz
-
30
-
V R=600 V, f =1 MHz
-
30
-
1)
J-STD20 and JESD22
2)
All devices tested under avalanche conditions, for a time periode of 5ms, at 5mA.
3)
tc is the time constant for the capacitive displacement current waveform (independent from T j, ILOAD and
di/dt), different from trr, which is dependent on Tj, ILOAD, di/dt. No reverse recovery time constant trr due to
absence of minority carrier injection.
4)
Only capacitive charge occuring, guaranteed by design.
Rev. 2.1
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IDH05S60C
2 Diode forward current
P tot=f(T C)
I F=f(T C); T j≤175 °C
parameter: RthJC(max)
parameter: R thJC(max); V F(max)
60
15
50
12.5
40
10
IF [A]
Ptot [W]
1 Power dissipation
30
7.5
20
5
10
2.5
0
0
25
50
75
100
125
150
175
25
50
75
100
TC [°C]
125
150
175
200
TC [°C]
3 Typ. forward characteristic
4 Typ. forward characteristic in surge current
I F=f(V F); t p=400 µs
mode
parameter: T j
I F=f(V F); t p=400 µs; parameter: Tj
15
60
175 °C
100 °C
150 °C
50
10
40
IF [A]
IF [A]
-55 °C
25 °C
5
175 °C
30
25 °C
100 °C
20
150 °C
10
-55 °C
0
0
0
1
2
3
4
VF [V]
Rev. 2.1
0
2
4
6
8
VF [V]
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IDH05S60C
5 Typ. forward power dissipation vs.
6 Typ. reverse current vs. reverse voltage
average forward current
I R=f(V R)
P F,AV=f(I F), T C=100 °C, parameter: D =t p/T
parameter: T j
102
30
1
0.1
25
101
0.5
20
100
175ºC
IR [µA]
PF(AV) [W]
0.2
15
150ºC
100ºC
10-1
25ºC
10
-55ºC
10-2
5
10-3
0
0
2
4
6
8
10
100
12
200
IF(AV) [A]
300
400
500
600
VR [V]
7 Transient thermal impedance
8 Typ. capacitance vs. reverse voltage
Z thJC=f(t p)
C =f(V R); T C=25 °C, f =1 MHz
parameter: D =t p/T
101
300
250
0.5
100
200
C [pF]
ZthJC [K/W]
0.2
0.1
0.05
150
0.02
10-1
100
0.01
single pulse
50
10-2
0
10-5
10-4
10-3
10-2
10-1
100
100
101
102
103
VR [V]
t [s]
Rev. 2.1
10-1
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IDH05S60C
10 Typ. capacitance charge vs. current slope
E C=f(V R)
Q C=f(di F/dt )4); T j=150 °C; I F≤I F,max
7
14
6
12
5
10
4
8
Qc [nC]
Ec [µC]
9 Typ. C stored energy
3
6
2
4
1
2
0
0
100
200
300
400
500
600
VR [V]
Rev. 2.1
0
100
400
700
1000
diF/dt [A/µs]
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IDH05S60C
PG-TO220-2: Outline
Dimensions in mm/inches
Rev. 2.1
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2013-02-12
IDH05S60C
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2012 Infineon Technologies AG
All Rights Reserved.
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conditions or characteristics. With respect to any examples or hints given herein, any typical
values stated herein and/or any information regarding the application of the device,
Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,
including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
Information
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contact the nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information
on the types in question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems
and/or automotive, aviation and aerospace applications or systems only with
the express written approval of Infineon Technologies, if a failure of such components can
reasonably be expected to cause the failure of that life-support , automotive, aviation and
aerospace device or system or to affect the safety or effectiveness of that device or system.
Life support systems are intended to be implanted in the human body and/or maintain
and sustain and/or protect human life. If they fail, it is reasonable to assume that the health
of the user or other persons may be endangered.
Rev. 2.1
page 7
2013-02-12