IDM02G120C5 Data Sheet (934 KB, EN)

Diod e
Silicon Carbide Schottky Diode
IDM02G120C5
5th Generation thinQ!™ 1200 V SiC Schottky Diode
Final Da ta Sh eet
Rev. 2.0, 2015-06-22
Indust rial Po wer C o ntrol
IDM02G120C5
5th Generation thinQ!™ 1200 V SiC Schottky Diode
SiC Schottky Diode
Features:
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Revolutionary semiconductor material - Silicon Carbide
No reverse recovery current / No forward recovery
Temperature independent switching behavior
Low forward voltage even at high operating temperature
Tight forward voltage distribution
Excellent thermal performance
Extended surge current capability
Specified dv/dt ruggedness
1)
Qualified according to JEDEC for target applications
Pb-free lead plating; RoHS compliant
1
2
Benefits
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System efficiency improvement over Si diodes
Enabling higher frequency / increased power density solutions
System size/cost savings due to reduced heatsink requirements and smaller magnetics
Reduced EMI
Highest efficiency across the entire load range
Robust diode operation during surge events
High reliability
RelatedLinks: www.infineon.com/sic
Applications
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Solar inverters
Uninterruptable power supplies
Motor drives
Power Factor Correction
Package pin definitions
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Pin 1 and backside – cathode
Pin 2 – anode
Key Performance and Package Parameters
Type
IDM02G120C5
VDC
IF
QC
Tj,max
Marking
Package
1200V
2A
14nC
175°C
D0212C5
PG-TO252-2
1) J-STD20 and JESD22
Final Data Sheet
2
Rev. 2.0, 2015-06-22
IDM02G120C5
5th Generation thinQ!™ 1200 V SiC Schottky Diode
Table of Contents
Description…. ............................................................................................................................................. 2
Table of Contents ........................................................................................................................................ 3
Maximum ratings ......................................................................................................................................... 4
Thermal Resistances .................................................................................................................................. 4
Electrical Characteristics............................................................................................................................. 5
Electrical Characteristics diagram .............................................................................................................. 5
Package Drawings ...................................................................................................................................... 9
Revision History ........................................................................................................................................ 10
Disclaimer…. ............................................................................................................................................. 10
Final Data Sheet
3
Rev. 2.0, 2015-06-22
IDM02G120C5
5th Generation thinQ!™ 1200 V SiC Schottky Diode
Maximum ratings
Parameter
Symbol
Value
Unit
Repetitive peak reverse voltage
VRRM
1200
V
Continoues forward current for Rth(j-c,max)
TC = 170°C, D=1
TC = 135°C, D=1
TC = 25°C, D=1
Surge non-repetitive forward current, sine halfwave
TC=25°C, tp=10ms
TC=150°C, tp=10ms
Non-repetitive peak forward current
TC = 25°C, tp=10 µs
i²t value
TC = 25°C, tp=10 ms
TC = 150°C, tp=10 ms
Diode dv/dt ruggedness
VR=0...960 V
Power dissipation
TC = 25°C
2
7
14
IF
A
IF,SM
37
31
IF,max
344
∫ i²dt
7.0
4.9
A²s
dv/dt
80
V/ns
Ptot
98
W
Operating and storage temperature
Tj;Tstg
Soldering temperature,
Wave- and reflowsoldering allowed (reflow MSL1)
Tsold
-55…175
°C
260
Thermal Resistances
Parameter
Value
Symbol Conditions
min.
typ.
max.
-
1.2
1.5
Unit
Characteristic
Diode thermal resistance,
junction – case
Thermal resistance,
junction – ambient
Rth(j-c)
SMD version, device on PCB,
62
minimal footprint
Rth(j-a)
SMD version, device on PCB,
35
2)
6 cm² cooling area
2)
Device on 40 mm*40mm*1.5 epoxy PCB FR4 with 6cm² (one layer, 70µm thick) copper for cathode
connection. PCB is vertical without air stream cooling.
Final Data Sheet
4
K/W
Rev. 2.0, 2015-06-22
IDM02G120C5
5th Generation thinQ!™ 1200 V SiC Schottky Diode
Electrical Characteristics, at Tj=25°C, unless otherwise specified
Parameter
Value
Symbol Conditions
min.
typ.
max.
1200
-
1.4
1.7
1.2
6
1.65
2.30
18
90
Unit
Static Characteristic
DC blocking voltage
VDC
Diode forward voltage
VF
Reverse current
IR
Tj = 25°C
IF= 2 A, Tj=25°C
IF= 2 A, Tj=150°C
VR=1200 V, Tj=25°C
VR=1200 V, Tj=150°C
V
V
µA
AC Characteristics, at Tj=25°C, unless otherwise specified
Parameter
Value
Symbol Conditions
Unit
min.
typ.
max.
-
14
-
nC
-
182
13
10
-
pF
Dynamic Characteristics
VR = 800 V, Tj=150°C
Total capacitive charge
QC
VR
QC   C (V )dV
0
Total Capacitance
C
VR=1 V, f=1 MHz
VR=400 V, f=1 MHz
VR=800 V, f=1 MHz
Electrical Characteristics diagram
Final Data Sheet
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Rev. 2.0, 2015-06-22
IDM02G120C5
5th Generation thinQ!™ 1200 V SiC Schottky Diode
Figure 1. Power dissipation as a function
of case temperature, Ptot=f(TC),
Rth(j-c),max
Figure 2. Diode forward current as function
of temperature, Tj≤175°C,
Rth(j-c),max, parameter D=duty cycle,
Vth, Rdiff @ Tj=175°C
Figure 3. Typical forward characteristics,
IF=f(VF), tp= 10 µs, parameter: Tj
Figure 4. Typical forward characteristics in surge
current, IF=f(VF), tp= 10 µs,
parameter: Tj
Final Data Sheet
6
Rev. 2.0, 2015-06-22
IDM02G120C5
5th Generation thinQ!™ 1200 V SiC Schottky Diode
Figure 5. Typical capacitance charge as function
1
of current slope , QC=f(dIF/dt), Tj=150°C
Figure 6. Typical reverse current as function
of reverse voltage, IR=f(VR), parameter: Tj
1) Only capacitive charge, guaranteed by design.
Figure 7. Max. transient thermal impedance,
Zth,jc=f(tP), parameter: D=tP/T
Final Data Sheet
Figure 8. Typical capacitance as function of
reverse voltage, C=f(VR); Tj=25°C; f=1 MHz
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Rev. 2.0, 2015-06-22
IDM02G120C5
5th Generation thinQ!™ 1200 V SiC Schottky Diode
Figure 9. Typical capacitance stored energy as
function of reverse voltage,
VR
EC   C (V )VdV
0
Final Data Sheet
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Rev. 2.0, 2015-06-22
IDM02G120C5
5th Generation thinQ!™ 1200 V SiC Schottky Diode
PG-TO252-2
Package Drawings
Final Data Sheet
9
Rev. 2.0, 2015-06-22
IDM02G120C5
5th Generation thinQ!™ 1200 V SiC Schottky Diode
Revision History
IIDM02G120C5
Revision: 2015-06-22, Rev. 2.0
Previous Revision:
Revision
Date
Subjects (major changes since last version)
2.0
2015-06-22 Final data sheet
Disclaimer
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Published by
Infineon Technologies AG
81726 Munich, Germany
© 2015 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or
characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any
information regarding the application of the device, Infineon Technologies hereby disclaims any and all
warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual
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Information
For further information on technology, delivery terms and conditions and prices, please contact the nearest
Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information on the types in
question, please contact the nearest Infineon Technologies Office.
The Infineon Technologies component described in this Data Sheet may be used in life-support devices or
systems and/or automotive, aviation and aerospace applications or systems only with the express written
approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the
failure of that life-support, automotive, aviation and aerospace device or system or to affect the safety or
effectiveness of that device or system. Life support devices or systems are intended to be implanted in the
human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to
assume that the health of the user or other persons may be endangered.
Final Data Sheet
10
Rev. 2.0, 2015-06-22