Diod e Silicon Carbide Schottky Diode IDM02G120C5 5th Generation thinQ!™ 1200 V SiC Schottky Diode Final Da ta Sh eet Rev. 2.0, 2015-06-22 Indust rial Po wer C o ntrol IDM02G120C5 5th Generation thinQ!™ 1200 V SiC Schottky Diode SiC Schottky Diode Features: Revolutionary semiconductor material - Silicon Carbide No reverse recovery current / No forward recovery Temperature independent switching behavior Low forward voltage even at high operating temperature Tight forward voltage distribution Excellent thermal performance Extended surge current capability Specified dv/dt ruggedness 1) Qualified according to JEDEC for target applications Pb-free lead plating; RoHS compliant 1 2 Benefits System efficiency improvement over Si diodes Enabling higher frequency / increased power density solutions System size/cost savings due to reduced heatsink requirements and smaller magnetics Reduced EMI Highest efficiency across the entire load range Robust diode operation during surge events High reliability RelatedLinks: www.infineon.com/sic Applications Solar inverters Uninterruptable power supplies Motor drives Power Factor Correction Package pin definitions Pin 1 and backside – cathode Pin 2 – anode Key Performance and Package Parameters Type IDM02G120C5 VDC IF QC Tj,max Marking Package 1200V 2A 14nC 175°C D0212C5 PG-TO252-2 1) J-STD20 and JESD22 Final Data Sheet 2 Rev. 2.0, 2015-06-22 IDM02G120C5 5th Generation thinQ!™ 1200 V SiC Schottky Diode Table of Contents Description…. ............................................................................................................................................. 2 Table of Contents ........................................................................................................................................ 3 Maximum ratings ......................................................................................................................................... 4 Thermal Resistances .................................................................................................................................. 4 Electrical Characteristics............................................................................................................................. 5 Electrical Characteristics diagram .............................................................................................................. 5 Package Drawings ...................................................................................................................................... 9 Revision History ........................................................................................................................................ 10 Disclaimer…. ............................................................................................................................................. 10 Final Data Sheet 3 Rev. 2.0, 2015-06-22 IDM02G120C5 5th Generation thinQ!™ 1200 V SiC Schottky Diode Maximum ratings Parameter Symbol Value Unit Repetitive peak reverse voltage VRRM 1200 V Continoues forward current for Rth(j-c,max) TC = 170°C, D=1 TC = 135°C, D=1 TC = 25°C, D=1 Surge non-repetitive forward current, sine halfwave TC=25°C, tp=10ms TC=150°C, tp=10ms Non-repetitive peak forward current TC = 25°C, tp=10 µs i²t value TC = 25°C, tp=10 ms TC = 150°C, tp=10 ms Diode dv/dt ruggedness VR=0...960 V Power dissipation TC = 25°C 2 7 14 IF A IF,SM 37 31 IF,max 344 ∫ i²dt 7.0 4.9 A²s dv/dt 80 V/ns Ptot 98 W Operating and storage temperature Tj;Tstg Soldering temperature, Wave- and reflowsoldering allowed (reflow MSL1) Tsold -55…175 °C 260 Thermal Resistances Parameter Value Symbol Conditions min. typ. max. - 1.2 1.5 Unit Characteristic Diode thermal resistance, junction – case Thermal resistance, junction – ambient Rth(j-c) SMD version, device on PCB, 62 minimal footprint Rth(j-a) SMD version, device on PCB, 35 2) 6 cm² cooling area 2) Device on 40 mm*40mm*1.5 epoxy PCB FR4 with 6cm² (one layer, 70µm thick) copper for cathode connection. PCB is vertical without air stream cooling. Final Data Sheet 4 K/W Rev. 2.0, 2015-06-22 IDM02G120C5 5th Generation thinQ!™ 1200 V SiC Schottky Diode Electrical Characteristics, at Tj=25°C, unless otherwise specified Parameter Value Symbol Conditions min. typ. max. 1200 - 1.4 1.7 1.2 6 1.65 2.30 18 90 Unit Static Characteristic DC blocking voltage VDC Diode forward voltage VF Reverse current IR Tj = 25°C IF= 2 A, Tj=25°C IF= 2 A, Tj=150°C VR=1200 V, Tj=25°C VR=1200 V, Tj=150°C V V µA AC Characteristics, at Tj=25°C, unless otherwise specified Parameter Value Symbol Conditions Unit min. typ. max. - 14 - nC - 182 13 10 - pF Dynamic Characteristics VR = 800 V, Tj=150°C Total capacitive charge QC VR QC C (V )dV 0 Total Capacitance C VR=1 V, f=1 MHz VR=400 V, f=1 MHz VR=800 V, f=1 MHz Electrical Characteristics diagram Final Data Sheet 5 Rev. 2.0, 2015-06-22 IDM02G120C5 5th Generation thinQ!™ 1200 V SiC Schottky Diode Figure 1. Power dissipation as a function of case temperature, Ptot=f(TC), Rth(j-c),max Figure 2. Diode forward current as function of temperature, Tj≤175°C, Rth(j-c),max, parameter D=duty cycle, Vth, Rdiff @ Tj=175°C Figure 3. Typical forward characteristics, IF=f(VF), tp= 10 µs, parameter: Tj Figure 4. Typical forward characteristics in surge current, IF=f(VF), tp= 10 µs, parameter: Tj Final Data Sheet 6 Rev. 2.0, 2015-06-22 IDM02G120C5 5th Generation thinQ!™ 1200 V SiC Schottky Diode Figure 5. Typical capacitance charge as function 1 of current slope , QC=f(dIF/dt), Tj=150°C Figure 6. Typical reverse current as function of reverse voltage, IR=f(VR), parameter: Tj 1) Only capacitive charge, guaranteed by design. Figure 7. Max. transient thermal impedance, Zth,jc=f(tP), parameter: D=tP/T Final Data Sheet Figure 8. Typical capacitance as function of reverse voltage, C=f(VR); Tj=25°C; f=1 MHz 7 Rev. 2.0, 2015-06-22 IDM02G120C5 5th Generation thinQ!™ 1200 V SiC Schottky Diode Figure 9. Typical capacitance stored energy as function of reverse voltage, VR EC C (V )VdV 0 Final Data Sheet 8 Rev. 2.0, 2015-06-22 IDM02G120C5 5th Generation thinQ!™ 1200 V SiC Schottky Diode PG-TO252-2 Package Drawings Final Data Sheet 9 Rev. 2.0, 2015-06-22 IDM02G120C5 5th Generation thinQ!™ 1200 V SiC Schottky Diode Revision History IIDM02G120C5 Revision: 2015-06-22, Rev. 2.0 Previous Revision: Revision Date Subjects (major changes since last version) 2.0 2015-06-22 Final data sheet Disclaimer We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? Your feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: [email protected] Published by Infineon Technologies AG 81726 Munich, Germany © 2015 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. The Infineon Technologies component described in this Data Sheet may be used in life-support devices or systems and/or automotive, aviation and aerospace applications or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support, automotive, aviation and aerospace device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Final Data Sheet 10 Rev. 2.0, 2015-06-22