INTERSIL FSPS230F4

FSPS230R, FSPS230F
TM
Data Sheet
Radiation Hardened, SEGR Resistant
N-Channel Power MOSFETs
Intersil Star*Power™ Rad Hard
MOSFETs have been specifically
developed for high performance
applications in a commercial or
military space environment. Star*Power MOSFETs offer the
system designer both extremely low rDS(ON) and Gate
Charge allowing the development of low loss Power
Subsystems. Star*Power FETs combine this electrical
capability with total dose radiation hardness up to 300K
RADs while maintaining the guaranteed performance for
SEE (Single Event Effects) which the Intersil FS families
have always featured.
The Intersil portfolio of Star*Power FETs includes a family of
devices in various voltage, current and package styles. The
Star*Power family consists of Star*Power and Star*Power
Gold products. Star*Power FETs are optimized for total dose
and rDS(ON) performance while exhibiting SEE capability at
full rated voltage up to an LET of 37. Star*Power Gold FETs
have been optimized for SEE and Gate Charge providing
SEE performance to 80% of the rated voltage for an LET of
82 with extremely low gate charge characteristics.
This MOSFET is an enhancement-mode silicon-gate power
field effect transistor of the vertical DMOS (VDMOS)
structure. It is specifically designed and processed to be
radiation tolerant. The MOSFET is well suited for
applications exposed to radiation environments such as
switching regulation, switching converters, power
distribution, motor drives and relay drivers as well as other
power control and conditioning applications. As with
conventional MOSFETs these Radiation Hardened
MOSFETs offer ease of voltage control, fast switching
speeds and ability to parallel switching devices.
Reliability screening is available as either TXV or Space
equivalent of MIL-S-19500.
May 2000
File Number
4866
Features
• 14A, 200V, rDS(ON) = 0.145Ω
• UIS Rated
• Total Dose
- Meets Pre-RAD Specifications to 100K RAD (Si)
- Rated to 300K RAD (Si)
• Single Event
- Safe Operating Area Curve for Single Event Effects
- SEE Immunity for LET of 36MeV/mg/cm2 with
VDS up to 100% of Rated Breakdown and
VGS of 10V Off-Bias
• Dose Rate
- Typically Survives 3E9 RAD (Si)/s at 80% BVDSS
- Typically Survives 2E12 if Current Limited to IAS
• Photo Current
- 3.0nA Per-RAD (Si)/s Typically
• Neutron
- Maintain Pre-RAD Specifications
for 1E13 Neutrons/cm2
- Usable to 1E14 Neutrons/cm2
Symbol
D
G
S
Packaging
TO-257AA
S
D
G
Formerly available as type TA45210W.
Ordering Information
RAD LEVEL
SCREENING LEVEL
PART NUMBER/BRAND
10K
Engineering Samples
FSPS230D1
100K
TXV
FSPS230R3
100K
Space
FSPS230R4
300K
TXV
FSPS230F3
300K
Space
FSPS230F4
1
CAUTION: Beryllia Warning per MIL-S-19500
refer to package specifications.
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Intersil and Design is a trademark of Intersil Corporation. | Copyright © Intersil Corporation 2000
Star*Power™ is a trademark of Intersil Corporation.
FSPS230R, FSPS230F
Absolute Maximum Ratings
TC = 25oC, Unless Otherwise Specified
FSPS230R, FSPS230F
UNITS
200
200
V
V
14
9
40
±30
A
A
A
V
56
22
0.45
36
14
40
-55 to 150
300
W
W
W/ oC
A
A
A
oC
oC
4.4 (Typical)
g
Drain to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDS
Drain to Gate Voltage (RGS = 20kΩ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDGR
Continuous Drain Current
TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID
TC = 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS
Maximum Power Dissipation
TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PT
TC = 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PT
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Single Pulsed Avalanche Current, L = 100µH (See Test Figure) . . . . . . . . . . . . . . . . . . . . . . .IAS
Continuous Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IS
Pulsed Source Current (Body Diode). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ISM
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
Lead Temperature (During Soldering) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
(Distance >0.063in (1.6mm) from Case, 10s Max)
Weight (Typical)
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
TC = 25oC, Unless Otherwise Specified
Electrical Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
Drain to Source Breakdown Voltage
BVDSS
ID = 1mA, VGS = 0V
Gate Threshold Voltage
VGS(TH)
VGS = VDS,
ID = 1mA
Zero Gate Voltage Drain Current
IDSS
Gate to Source Leakage Current
IGSS
Drain to Source On-State Voltage
Drain to Source On Resistance
VDS(ON)
rDS(ON)12
Turn-On Delay Time
td(ON)
Rise Time
tr
Turn-Off Delay Time
td(OFF)
Fall Time
VDS = 160V,
VGS = 0V
VGS = ±30V
Qg(12)
Gate Charge Source
Qgs
Gate Charge Drain
Qgd
UNITS
-
-
V
-
-
5.5
V
TC = 25oC
TC = 125oC
TC = 25oC
TC = 125oC
TC = 25oC
TC = 125oC
2.0
-
4.5
V
1.0
-
-
V
-
-
25
µA
-
-
250
µA
-
-
100
nA
-
-
200
nA
-
-
2.17
V
TC = 25oC
-
0.125
0.145
Ω
TC = 125oC
VDD = 100V, ID = 14A,
RL = 7.1Ω, VGS = 12V,
RGS = 7.5Ω
VGS = 0V to 12V
MAX
200
tf
Total Gate Charge
TYP
TC = -55oC
VGS = 12V, ID = 14A
ID = 9A,
VGS = 12V
MIN
VDD = 100V,
ID = 14A
-
-
0.290
Ω
-
-
20
ns
-
-
40
ns
-
-
35
ns
-
-
15
ns
-
30
33
nC
-
10
12
nC
-
8
10
nC
Gate Charge at 20V
Qg(20)
VGS = 0V to 20V
-
45
-
nC
Threshold Gate Charge
Qg(TH)
VGS = 0V to 2V
-
3
-
nC
Plateau Voltage
V(PLATEAU)
Input Capacitance
CISS
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
Thermal Resistance Junction to Case
2
RθJC
ID = 14A, VDS = 15V
-
6.5
-
V
VDS = 25V, VGS = 0V,
f = 1MHz
-
1400
-
pF
-
230
-
pF
-
8
-
pF
2.2
oC/W
-
-
FSPS230R, FSPS230F
Source to Drain Diode Specifications
PARAMETER
Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
SYMBOL
VSD
trr
QRR
TEST CONDITIONS
ISD = 14A
ISD = 14A, dISD/dt = 100A/µs
TYP
1.5
MAX
1.2
220
-
UNITS
V
ns
µC
TC = 25oC, Unless Otherwise Specified
Electrical Specifications up to 300K RAD
PARAMETER
MIN
-
SYMBOL
TEST CONDITIONS
MIN
MAX
MIN
100K RAD
MAX
UNITS
300K RAD
Drain to Source Breakdown Volts
(Note 3)
BVDSS
VGS = 0, ID = 1mA
200
-
200
Gate to Source Threshold Volts
(Note 3)
VGS(TH)
VGS = VDS, ID = 1mA
2.0
4.5
1.5
Gate to Body Leakage
(Notes 2, 3)
IGSS
VGS = ±30V, VDS = 0V
-
100
Zero Gate Leakage
(Note 3)
IDSS
VGS = 0, VDS = 160V
-
Drain to Source On-State Volts
(Notes 1, 3)
VDS(ON)
VGS = 12V, ID = 14A
-
Drain to Source On Resistance
(Notes 1, 3)
rDS(ON)12
VGS = 12V, ID = 9A
-
0.145
V
4.5
V
100
nA
25
50
µA
2.17
2.38
V
0.160
Ω
NOTES:
1. Pulse test, 300µs Max.
2. Absolute value.
3. Insitu Gamma bias must be sampled for both VGS = 12V, VDS = 0V and VGS = 0V, VDS = 80% BVDSS .
Single Event Effects (SEB, SEGR)
Note 4
SYMBOL
TEST
Single Event Effects Safe Operating Area
SEESOA
ION
SPECIES
Br
Br
I
I
Au
Au
ENVIRONMENT (NOTE 5)
TYPICAL LET
TYPICAL
(MeV/mg/cm)
RANGE (µ)
37
36
37
36
60
32
60
32
82
28
82
28
APPLIED
VGS BIAS
(V)
-10
-15
-2
-8
0
-5
(NOTE 6)
MAXIMUM
VDS BIAS (V)
200
160
200
160
160
120
NOTES:
4. Testing conducted at Brookhaven National Labs.
5. Fluence = 1E5 ions/cm2 (typical), T = 25oC.
6. Does not exhibit Single Event Burnout (SEB) or Single Event Gate Rupture (SEGR).
Performance Curves
Unless Otherwise Specified
LET = 37MeV/mg/cm2, RANGE = 36µ
LET = 60MeV/mg/cm2, RANGE = 32µ
LET = 82MeV/mg/cm2, RANGE = 28µ
LET = 37 BROMINE
FLUENCE = 1E5 IONS/cm2 (TYPICAL)
240
200
TEMP = 25oC
200
160
160
VDS
VDS (V)
240
120
120
80
80
LET = 82 GOLD
40
40
LET = 60 IODINE
0
0
0
-4
-8
-12
-16
-20
VGS (V)
FIGURE 1. SINGLE EVENT EFFECTS SAFE OPERATING AREA
3
0
-5
-10
-15
-20
-25
VGS
FIGURE 2. TYPICAL SEE SIGNATURE CURVE
-30
FSPS230R, FSPS230F
Performance Curves
Unless Otherwise Specified (Continued)
1E-3
18
LIMITING INDUCTANCE (HENRY)
16
1E-4
14
ID , DRAIN (A)
ILM = 10A
30A
1E-5
100A
300A
1E-6
12
10
8
6
4
2
0
1E-7
10
100
30
-50
1000
300
0
DRAIN SUPPLY (V)
FIGURE 3. TYPICAL DRAIN INDUCTANCE REQUIRED TO
LIMIT GAMMA DOT CURRENT TO IAS
ID , DRAIN CURRENT (A)
100
50
150
100
TC , CASE TEMPERATURE (oC)
FIGURE 4. MAXIMUM CONTINUOUS DRAIN CURRENT vs
TEMPERATURE
TC = 25oC
12V
QG
10
100µs
QGS
1ms
QGD
1
VG
10ms
OPERATION IN THIS
AREA MAY BE
LIMITED BY rDS(ON)
0.1
10
1
100
1000
CHARGE
VDS , DRAIN TO SOURCE VOLTAGE (V)
FIGURE 5. FORWARD BIAS SAFE OPERATING AREA
FIGURE 6. BASIC GATE CHARGE WAVEFORM
2.5
50
ID, DRAIN TO SOURCE CURRENT (A)
PULSE DURATION = 250ms, VGS = 12V, ID = 9A
NORMALIZED rDS(ON)
2.0
1.5
1.0
0.5
0.0
-80
-40
0
40
80
120
160
TJ , JUNCTION TEMPERATURE (oC)
FIGURE 7. TYPICAL NORMALIZED rDS(ON) vs JUNCTION
TEMPERATURE
4
VGS = 14V
VGS = 12V
VGS = 10V
VGS = 8V
VGS = 6V
40
30
20
VGS = 6V
10
0
0
2
4
6
8
VDS , DRAIN TO SOURCE VOLTAGE (V)
FIGURE 8. TYPICAL OUTPUT CHARACTERISTICS
10
FSPS230R, FSPS230F
NORMALIZED THERMAL RESPONSE (ZqJC)
Performance Curves
Unless Otherwise Specified (Continued)
101
100
0.5
10-1
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
PDM
10-2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJC + TC
10-3 -5
10
10-4
10-3
10-2
10-1
t1
t2
100
101
t, RECTANGULAR PULSE DURATION (s)
FIGURE 9. NORMALIZED MAXIMUM TRANSIENT THERMAL RESPONSE
IAS , AVALANCHE CURRENT (A)
100
STARTING TJ = 25oC
10
STARTING TJ = 150oC
1
IF R = 0
tAV = (L) (IAS) / (1.3 RATED BVDSS - VDD)
IF R ≠ 0
tAV = (L/R) ln [(IAS*R) / (1.3 RATED BVDSS - VDD) + 1]
0.1
0.01
0.1
1
10
tAV, TIME IN AVALANCHE (ms)
FIGURE 10. UNCLAMPED INDUCTIVE SWITCHING
Test Circuits and Waveforms
ELECTRONIC SWITCH OPENS
WHEN IAS IS REACHED
VDS
L
BVDSS
+
CURRENT I
TRANSFORMER AS
tP
-
VARY tP TO OBTAIN
REQUIRED PEAK IAS
VDD
DUT
tP
VDD
+
50Ω
VGS ≤ 20V
0V
VDS
IAS
50V-150V
50Ω
tAV
FIGURE 11. UNCLAMPED ENERGY TEST CIRCUIT
5
FIGURE 12. UNCLAMPED ENERGY WAVEFORMS
FSPS230R, FSPS230F
Test Circuits and Waveforms
(Continued)
tON
VDD
tOFF
td(ON)
td(OFF)
tr
RL
VDS
tf
90%
90%
VDS
VGS = 12V
10%
DUT
10%
0V
90%
RGS
50%
VGS
50%
PULSE WIDTH
10%
FIGURE 13. RESISTIVE SWITCHING TEST CIRCUIT
FIGURE 14. RESISTIVE SWITCHING WAVEFORMS
Screening Information
Screening is performed in accordance with the latest revision in effect of MIL-S-19500, (Screening Information Table).
Delta Tests and Limits (JANTXV Equivalent, JANS Equivalent) TC = 25oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MAX
UNITS
Gate to Source Leakage Current
IGSS
VGS = ±30V
±20 (Note 7)
nA
Zero Gate Voltage Drain Current
IDSS
VDS = 80% Rated Value
±25 (Note 7)
µA
Drain to Source On Resistance
rDS(ON)
TC = 25oC at Rated ID
±20% (Note 8)
Ω
Gate Threshold Voltage
VGS(TH)
ID = 1.0mA
±20% (Note 8)
V
NOTES:
7. Or 100% of Initial Reading (whichever is greater).
8. Of Initial Reading.
Screening Information
TEST
JANTXV EQUIVALENT
Unclamped Inductive Switching
JANS EQUIVALENT
VGS(PEAK) = 20V, L = 0.1mH; Limit = 36A
VGS(PEAK) = 20V, L = 0.1mH; Limit = 36A
Thermal Response
tH = 100ms; VH = 25V; IH = 1A; LIMIT = 85mV
tH = 100ms; VH = 25V; IH = 1A; LIMIT = 85mV
Gate Stress
VGS = 45V, t = 250µs
VGS = 45V, t = 250µs
Pind
Optional
Required
Pre Burn-In Tests (Note 9)
MIL-S-19500 Group A,
Subgroup 2 (All Static Tests at 25oC)
MIL-S-19500 Group A,
Subgroup 2 (All Static Tests at 25oC)
Steady State Gate
Bias (Gate Stress)
MIL-STD-750, Method 1042, Condition B
VGS = 80% of Rated Value,
TA = 150oC, Time = 48 hours
MIL-STD-750, Method 1042, Condition B
VGS = 80% of Rated Value,
TA = 150oC, Time = 48 hours
Interim Electrical Tests (Note 9)
All Delta Parameters Listed in the Delta Tests
and Limits Table
All Delta Parameters Listed in the Delta Tests
and Limits Table
Steady State Reverse
Bias (Drain Stress)
MIL-STD-750, Method 1042, Condition A
VDS = 80% of Rated Value,
TA = 150oC, Time = 160 hours
MIL-STD-750, Method 1042, Condition A
VDS = 80% of Rated Value,
TA = 150oC, Time = 240 hours
PDA
10%
5%
Final Electrical Tests (Note 9)
MIL-S-19500, Group A, Subgroup 2
MIL-S-19500, Group A,
Subgroups 2 and 3
NOTE:
9. Test limits are identical pre and post burn-in.
Additional Tests
PARAMETER
SYMBOL
TEST CONDITIONS
MAX
UNITS
Safe Operating Area
SOA
VDS = 160V, t = 10ms
0.5
A
Thermal Impedance
∆VSD
tH = 500ms; VH =25V; IH = 1A
125
mV
6
FSPS230R, FSPS230F
Rad Hard Data Packages - Intersil Power Transistors
TXV Equivalent
Class S - Equivalents
1. RAD HARD TXV EQUIVALENT - STANDARD DATA
PACKAGE
1. RAD HARD “S” EQUIVALENT - STANDARD DATA
PACKAGE
A. Certificate of Compliance
A. Certificate of Compliance
B. Assembly Flow Chart
B. Serialization Records
C. Preconditioning - Attributes Data Sheet
C. Assembly Flow Chart
D. Group A
- Attributes Data Sheet
D. SEM Photos and Report
E. Group B
- Attributes Data Sheet
F. Group C
- Attributes Data Sheet
G. Group D
- Attributes Data Sheet
E. Preconditioning - Attributes Data Sheet
- HTRB - Hi Temp Gate Stress Post
Reverse Bias Data and Delta Data
- HTRB - Hi Temp Drain Stress Post
Reverse Bias Delta Data
2. RAD HARD TXV EQUIVALENT - OPTIONAL DATA
PACKAGE
A. Certificate of Compliance
B. Assembly Flow Chart
C. Preconditioning - Attributes Data Sheet
- Pre and Post Burn-In Read and Record
Data
D. Group A
- Attributes Data Sheet
E. Group B
- Attributes Data Sheet
- Pre and Post Read and Record Data for
Intermittent Operating Life (Subgroup B3)
- Bond Strength Data (Subgroup B3)
- Pre and Post High Temperature Operating
Life Read and Record Data (Subgroup B6)
F. Group C
- Attributes Data Sheet
- Pre and Post Read and Record Data for
Intermittent Operating Life (Subgroup C6)
- Bond Strength Data (Subgroup C6)
G. Group D
- Attributes Data Sheet
- Pre and Post RAD Read and Record Data
F. Group A
G. Group B
- Attributes Data Sheet
H. Group C
- Attributes Data Sheet
I. Group D
- Attributes Data Sheet
2. RAD HARD MAX. “S” EQUIVALENT - OPTIONAL
DATA PACKAGE
A. Certificate of Compliance
B. Serialization Records
C. Assembly Flow Chart
D. SEM Photos and Report
E. Preconditioning - Attributes Data Sheet
- HTRB - Hi Temp Gate Stress Post
Reverse Bias Data and Delta Data
- HTRB - Hi Temp Drain Stress Post
Reverse Bias Delta Data
- X-Ray and X-Ray Report
F. Group A
- Attributes Data Sheet
- Subgroups A2, A3, A4, A5 and A7 Data
G. Group B
- Attributes Data Sheet
- Subgroups B1, B3, B4, B5 and B6 Data
H. Group C
- Attributes Data Sheet
- Subgroups C1, C2, C3 and C6 Data
I. Group D
7
- Attributes Data Sheet
- Attributes Data Sheet
- Pre and Post Radiation Data
FSPS230R, FSPS230F
TO-257AA
3 LEAD JEDEC TO-257AA HERMETIC METAL PACKAGE
A
ØP
E
INCHES
A1
Q
H1
D
0.065 R TYP.
L1
Øb1
L
Øb
1
2
3
J1
e
e1
MILLIMETERS
SYMBOL
MIN
MAX
MIN
MAX
NOTES
A
0.190
0.200
4.83
5.08
-
A1
0.035
0.045
0.89
1.14
-
Øb
0.025
0.035
0.64
0.88
2, 3
Øb1
0.060
0.090
1.53
2.28
-
D
0.645
0.665
16.39
16.89
-
E
0.410
0.420
10.42
10.66
-
e
0.100 TYP
2.54 TYP
4
e1
0.200 BSC
5.08 BSC
4
H1
0.230
0.250
5.85
6.35
-
J1
0.110
0.130
2.80
3.30
4
L
0.600
0.650
15.24
L1
-
0.035
16.51
-
-
0.88
-
ØP
0.140
0.150
3.56
3.81
-
Q
0.113
0.133
2.88
3.37
-
NOTES:
1. These dimensions are within allowable dimensions of Rev. B of
JEDEC TO-257AA dated 9-88.
2. Add typically 0.002 inches (0.05mm) for solder coating.
3. Lead dimension (without solder).
4. Position of lead to be measured 0.150 inches (3.81mm) from bottom
of dimension D.
5. Die to base BeO isolated, terminals to case ceramic isolated.
6. Controlling dimension: Inch.
7. Revision 1 dated 1-93.
WARNING!
BERYLLIA WARNING PER MIL-S-19500
Packages containing beryllium oxide (BeO) shall not be ground, machined, sandblasted, or subject to any mechanical operation
which will produce dust containing any beryllium compound. Packages containing any beryllium compound shall not be
subjected to any chemical process (etching, etc.) which will produce fumes containing beryllium or its’ compounds.
All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.
Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site www.intersil.com
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8
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Taipei, Taiwan
Republic of China
TEL: (886) 2 2716 9310
FAX: (886) 2 2715 3029