ETC FSGYC063D1

FSGYC063R
Data Sheet
Radiation Hardened, SEGR Resistant
N-Channel Power MOSFETs
Fairchild Star*Power™ Rad Hard
MOSFETs have been specifically
TM
developed for high performance
applications in a commercial or
military space environment.
Star*Power MOSFETs offer the system designer both
extremely low rDS(ON) and Gate Charge allowing the
development of low loss Power Subsystems. Star*Power
Gold FETs combine this electrical capability with total dose
radiation hardness up to 100K RADs while maintaining the
guaranteed performance for Single Event Effects (SEE)
which the Fairchild FS families have always featured.
The Fairchild family of Star*Power FETs includes a series of
devices in various voltage, current and package styles. The
portfolio consists of Star*Power and Star*Power Gold
products. Star*Power FETs are optimized for total dose and
rDS(ON) while exhibiting SEE capability at full rated voltage
up to an LET of 37. Star*Power Gold FETs have been
optimized for SEE and Gate Charge combining SEE
performance to 80% of the rated voltage for an LET of 82
with extremely low gate charge characteristics.
This MOSFET is an enhancement-mode silicon-gate power
field effect transistor of the vertical DMOS (VDMOS)
structure. It is specifically designed and processed to be
radiation tolerant. The MOSFET is well suited for
applications exposed to radiation environments such as
switching regulation, switching converters, power
distribution, motor drives and relay drivers as well as other
power control and conditioning applications. As with
conventional MOSFETs these Radiation Hardened
MOSFETs offer ease of voltage control, fast switching
speeds and ability to parallel switching devices.
December 2001
Features
• 70A †, 30V, rDS(ON) = 0.004Ω
• UIS Rated
• Total Dose
- Meets Pre-RAD Specifications to 100K RAD (Si)
• Single Event
- Safe Operating Area Curve for Single Event Effects
- SEE Immunity for LET of 82MeV/mg/cm2 with
VDS up to 80% of Rated Breakdown
• Dose Rate
- Typically Survives 3E9 RAD (Si)/s at 80% BVDSS
- Typically Survives 2E12 if Current Limited to I AS
• Photo Current
- 3nA Per-RAD (Si)/s Typically
• Neutron
- Maintain Pre-RAD Specifications
for 3E13 Neutrons/cm2
- Usable to 3E14 Neutrons/cm2
Symbol
D
G
S
Packaging
SMD2
Reliability screening is available as either TXV or Space
equivalent of MIL-PRF-19500.
Formerly available as type TA45223W.
Ordering Information
RAD LEVEL
SCREENING LEVEL
PART NUMBER/BRAND
10K
Engineering samples
FSGYC063D1
100K
TXV
FSGYC063R3
100K
Space
FSGYC063R4
† Current is limited by the package capability
©2001 Fairchild Semiconductor Corporation
FSGYC063R Rev. B
FSGYC063R
Absolute Maximum Ratings
TC = 25oC, Unless Otherwise Specified
FSGYC063R
UNITS
Drain to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDS
30
V
Drain to Gate Voltage (RGS = 20kΩ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR
30
V
TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
70 †
A
TC = 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
70 †
A
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM
200
A
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS
±24
V
TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PT
208
W
TC = 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PT
83
W
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
1.67
W/ oC
A
Continuous Drain Current
Maximum Power Dissipation
Single Pulsed Avalanche Current, L = 100µH, (See Test Figure) . . . . . . . . . . . . . . . . . . . . . . IAS
180
Continuous Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IS
70
A
Pulsed Source Current (Body Diode). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ISM
200
A
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
-55 to 150
oC
Lead Temperature (During Soldering) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
(Distance >0.063in (1.6mm) from Case, 10s Max)
300
oC
3.3 (Typical)
g
Weight (Typical) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
† Current is limited by the package capability.
Electrical Specifications
TC = 25oC, Unless Otherwise Specified
PARAMETER
Drain to Source Breakdown Voltage
Gate Threshold Voltage
SYMBOL
BVDSS
VGS(TH)
TEST CONDITIONS
ID = 1mA, VGS = 0V
VGS = VDS,
ID = 1mA
Zero Gate Voltage Drain Current
IDSS
VDS = 24V,
VGS = 0V
Gate to Source Leakage Current
IGSS
VGS = ±30V
±24V
Drain to Source On-State Voltage
VDS(ON)
Drain to Source On Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate Charge Source
rDS(ON)12
td(ON)
tr
td(OFF)
TC = -55oC
TC = 25oC
TC = 125oC
TC = 25oC
TC = 125oC
TC = 25oC
TC = 125oC
VGS = 12V, ID = 70A
ID = 70A,
VGS = 12V
TC = 25oC
TC = 125oC
VDD = 15V, ID = 70A,
RL = 0.21Ω, VGS = 12V,
RGS = 2.35Ω
tf
Qg(12)
VGS = 0V to 12V
Qgs
VDD = 15V,
ID = 70A
MIN
TYP
MAX
UNITS
30
-
-
V
-
-
5.5
V
2.0
-
4.5
V
1.0
-
-
V
-
-
25
µA
-
-
250
µA
-
-
100
nA
-
-
200
nA
-
-
0.280
V
-
0.0035
0.004
Ω
-
-
0.006
Ω
-
-
40
ns
-
-
100
ns
-
-
70
ns
-
-
20
ns
-
115
135
nC
-
40
55
nC
-
20
30
nC
-
225
-
nC
Gate Charge Drain
Qgd
Gate Charge at 20V
Qg(20)
VGS = 0V to 20V
Qg(TH)
VGS = 0V to 2V
-
17
-
nC
ID = 70A, VDS = 15V
-
5.5
-
V
Threshold Gate Charge
Plateau Voltage
V(PLATEAU)
Input Capacitance
CISS
Output Capacitance
COSS
Reverse Transfer Capacitance
Thermal Resistance Junction to Case
©2001 Fairchild Semiconductor Corporation
VDS = 25V, VGS = 0V,
f = 1MHz
-
8100
-
pF
-
5100
-
pF
CRSS
-
90
-
pF
RθJC
-
-
0.60
oC/W
FSGYC063R Rev. B
FSGYC063R
Source to Drain Diode Specifications
PARAMETER
SYMBOL
Forward Voltage
TEST CONDITIONS
VSD
Reverse Recovery Time
trr
Reverse Recovery Charge
MIN
TYP
ISD = 70A
-
-
1.2
V
ISD = 70A, dISD/dt = 100A/µs
-
-
140
ns
-
0.32
-
µC
QRR
Electrical Specifications up to 100K RAD
PARAMETER
MAX
UNITS
TC = 25oC, Unless Otherwise Specified
SYMBOL
TEST CONDITIONS
MIN
MAX
UNITS
Drain to Source Breakdown Volts
(Note 3)
BVDSS
VGS = 0, ID = 1mA
30
-
V
Gate to Source Threshold Volts
(Note 3)
VGS(TH)
VGS = VDS, ID = 1mA
2.0
4.5
V
Gate to Body Leakage
(Notes 2, 3)
IGSS
VGS = ±24V, VDS = 0V
-
100
nA
Zero Gate Leakage
(Note 3)
IDSS
VGS = 0, VDS = 24V
-
25
µA
Drain to Source On-State Volts
(Notes 1, 3)
VDS(ON)
VGS = 12V, ID = 70A
-
0.280
V
Drain to Source On Resistance
(Notes 1, 3)
rDS(ON)12
VGS = 12V, ID = 70A
-
0.004
Ω
NOTES:
1. Pulse test, 300µs Max.
2. Absolute value.
3. Insitu Gamma bias must be sampled for both V GS = 12V, VDS = 0V and VGS = 0V, VDS = 80% BVDSS .
Single Event Effects (SEB, SEGR) Note 4
ENVIRONMENT (NOTE 5)
TEST
SYMBOL
Single Event Effects Safe Operating Area
SEESOA
(NOTE 6)
TYPICAL LET
(MeV/mg/cm)
TYPICAL RANGE (µ)
(NOTE 7)
MAXIMUM
VDS BIAS
(V)
APPLIED
VGS BIAS
(V)
37
36
-5
30
60
32
-2
30
60
32
-5
22.5
82
28
0
24
82
28
-2
22.5
NOTES:
4. Testing conducted at Brookhaven National Labs or Texas A&M.
5. Fluence = 1E5 ions/cm2 (typical), T = 25oC.
6. Ion Species: LET = 37, Br or Kr; LET = 60, I or Xe; LET = 82, Au
7. Does not exhibit Single Event Burnout (SEB) or Single Event Gate Rupture (SEGR).
Performance Curves
Unless Otherwise Specified
LET = 37MeV/mg/cm2, RANGE = 36µ
LET = 60MeV/mg/cm2, RANGE = 32µ
LET = 82MeV/mg/cm2, RANGE = 28µ
40
40
LET = 37
TEMP = 25oC
30
VDS
VDS (V)
30
20
20
10
LET = 82
10
LET = 60
0
0
0
-1
-2
-3
-4
-5
-6
-7
VGS (V)
FIGURE 1. SINGLE EVENT EFFECTS SAFE OPERATING AREA
©2001 Fairchild Semiconductor Corporation
0
4
8
12
16
20
24
VGS (V)
FIGURE 2. TYPICAL SEE SIGNATURE CURVE
FSGYC063R Rev. B
FSGYC063R
Performance Curves
Unless Otherwise Specified
(Continued)
1E-3
100
LIMITING INDUCTANCE (HENRY)
90
80
1E-4
ILM = 10A
ID , DRAIN (A)
70
30A
1E-5
100A
300A
60
50
40
30
1E-6
20
10
1E-7
10
100
30
0
-50
1000
300
0
FIGURE 3. TYPICAL DRAIN INDUCTANCE REQUIRED TO
LIMIT GAMMA DOT CURRENT TO I AS
500
50
100
150
TC , CASE TEMPERATURE (oC)
DRAIN SUPPLY (V)
FIGURE 4. MAXIMUM CONTINUOUS DRAIN CURRENT vs
TEMPERATURE
TC = +25oC
ID , DRAIN CURRENT (A)
100µs
100
1ms
12V
QG
10ms
10
100ms
1
0.1
QGD
QGS
OPERATION IN THIS
AREA MAY BE
LIMITED BY rDS(ON)
VG
1
10
100
VDS , DRAIN-TO-SOURCE VOLTAGE (V)
CHARGE
FIGURE 5. FORWARD BIAS SAFE OPERATING AREA
FIGURE 6. BASIC GATE CHARGE WAVEFORM
2.5
200
ID, DRAIN-TO-SOURCE CURRENT (A)
NORMALIZED rDS(ON)
PULSE DURATION = 250ms, VGS = 12V, ID = 70A
2.0
1.5
1.0
0.5
0.0
-80
-40
0
40
80
120
160
TJ , JUNCTION TEMPERATURE (oC)
FIGURE 7. TYPICAL NORMALIZED rDS(ON) vs JUNCTION
TEMPERATURE
©2001 Fairchild Semiconductor Corporation
VGS = 6 VOLTS
160
120
80
VGS
VGS
VGS
VGS
VGS
40
0
0
2
4
6
= 14V
= 12V
= 10V
= 8V
= 6V
8
10
VDS, DRAIN-TO-SOURCE VOLTAGE (V)
FIGURE 8. TYPICAL OUTPUT CHARACTERISTICS
FSGYC063R Rev. B
FSGYC063R
NORMALIZED THERMAL RESPONSE (ZqJC)
Performance Curves
Unless Otherwise Specified
(Continued)
101
100
0.5
10-1
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
10-2
PDM
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJC + TC
10-3
10-5
10-4
10-3
10-2
10-1
t1
t2
100
101
t, RECTANGULAR PULSE DURATION (s)
FIGURE 9. NORMALIZED MAXIMUM TRANSIENT THERMAL RESPONSE
IAS , AVALANCHE CURRENT (A)
300
STARTING TJ = 25oC
100
STARTING TJ = 150oC
IF R = 0
tAV = (L) (IAS) / (1.3 RATED BVDSS - VDD)
IF R ≠ 0
tAV = (L/R) ln [(IAS*R) / (1.3 RATED BVDSS - VDD) + 1]
10
0.01
0.1
1
10
tAV, TIME IN AVALANCHE (ms)
FIGURE 10. UNCLAMPED INDUCTIVE SWITCHING
Test Circuits and Waveforms
ELECTRONIC SWITCH OPENS
WHEN IAS IS REACHED
VDS
L
BVDSS
+
CURRENT I
TRANSFORMER AS
tP
-
VARY tP TO OBTAIN
REQUIRED PEAK IAS
VDD
DUT
tP
VDD
+
50Ω
VGS ≤ 20V
0V
VDS
IAS
50V-150V
50Ω
tAV
FIGURE 11. UNCLAMPED ENERGY TEST CIRCUIT
©2001 Fairchild Semiconductor Corporation
FIGURE 12. UNCLAMPED ENERGY WAVEFORMS
FSGYC063R Rev. B
FSGYC063R
Test Circuits and Waveforms
(Continued)
tON
tOFF
VDD
td(ON)
td(OFF)
tf
tr
RL
VDS
90%
90%
VDS
VGS = 12V
10%
10%
DUT
0V
90%
RGS
50%
VGS
50%
PULSE WIDTH
10%
FIGURE 13. RESISTIVE SWITCHING TEST CIRCUIT
FIGURE 14. RESISTIVE SWITCHING WAVEFORMS
Screening Information
Screening is performed in accordance with the latest revision in effect of MIL-PRF-19500, (Screening Information Table).
Delta Tests and Limits (JANTXV Equivalent, JANS Equivalent) TC = 25oC, Unless Otherwise Specified
PARAMETER
Gate to Source Leakage Current
Zero Gate Voltage Drain Current
Drain to Source On Resistance
Gate Threshold Voltage
NOTES:
SYMBOL
IGSS
IDSS
rDS(ON)
VGS(TH)
TEST CONDITIONS
VGS = ±24V
VDS = 80% Rated Value
TC = 25oC at Rated ID
ID = 1.0mA
MAX
±20 (Note 7)
±25 (Note 7)
±20% (Note 8)
±20% (Note 8)
UNITS
nA
µA
Ω
V
8. Or 100% of Initial Reading (whichever is greater).
9. Of Initial Reading.
Screening Information
TEST
Unclamped Inductive Switching
Thermal Response
Gate Stress
Pind
Pre Burn-In Tests (Note 9)
Steady State Gate
Bias (Gate Stress)
Interim Electrical Tests (Note 9)
Steady State Reverse
Bias (Drain Stress)
PDA
Final Electrical Tests (Note 9)
JANTXV EQUIVALENT
VGS(PEAK) = 20V, L = 0.1mH; Limit = 180A
tH = 10ms; VH = 25V; IH = 4A; LIMIT = 55mV
VGS = 36V, t = 250µs
Optional
MIL-PRF-19500 Group A,
Subgroup 2 (All Static Tests at 25oC)
MIL-PRF-750, Method 1042, Condition B
VGS = 80% of Rated Value,
TA = 150oC, Time = 48 hours
All Delta Parameters Listed in the Delta Tests and
Limits Table
MIL-PRF-750, Method 1042, Condition A
VDS = 80% of Rated Value,
TA = 150oC, Time = 160 hours
10%
MIL-PRF-19500, Group A, Subgroup 2
JANS EQUIVALENT
VGS(PEAK) = 20V, L = 0.1mH; Limit = 180A
tH = 10ms; VH = 25V; IH = 4A; LIMIT = 55mV
VGS = 45V, 36V, t = 250µs
Required
MIL-PRF-19500 Group A,
Subgroup 2 (All Static Tests at 25oC)
MIL-PRF-750, Method 1042, Condition B
VGS = 80% of Rated Value,
TA = 150oC, Time = 48 hours
All Delta Parameters Listed in the Delta Tests and
Limits Table
MIL-PRF-750, Method 1042, Condition A
VDS = 80% of Rated Value,
TA = 150oC, Time = 240 hours
5%
MIL-PRF-19500, Group A,
Subgroups 2 and 3
NOTE:
10. Test limits are identical pre and post burn-in.
Additional Tests
PARAMETER
SYMBOL
TEST CONDITIONS
MAX
UNITS
Safe Operating Area
SOA
VDS = 24V, t = 10ms
23.7
A
Thermal Impedance
∆VSD
tH = 500ms; VH =20V; IH = 4A
HEAT SINK REQUIRED
115
mV
©2001 Fairchild Semiconductor Corporation
FSGYC063R Rev. B
FSGYC063R
Rad Hard Data Packages - Fairchild Power Transistors
TXV Equivalent
Class S - Equivalents
1. RAD HARD TXV EQUIVALENT - STANDARD DATA
PACKAGE
1. RAD HARD “S” EQUIVALENT - STANDARD DATA
PACKAGE
A. Certificate of Compliance
A. Certificate of Compliance
B. Assembly Flow Chart
B. Serialization Records
C. Preconditioning - Attributes Data Sheet
C. Assembly Flow Chart
D. Group A
- Attributes Data Sheet
D. SEM Photos and Report
E. Group B
- Attributes Data Sheet
F. Group C
- Attributes Data Sheet
G. Group D
- Attributes Data Sheet
E. Preconditioning - Attributes Data Sheet
- HTRB - Hi Temp Gate Stress Post
Reverse Bias Data and Delta Data
- HTRB - Hi Temp Drain Stress Post
Reverse Bias Delta Data
2. RAD HARD TXV EQUIVALENT - OPTIONAL DATA
PACKAGE
A. Certificate of Compliance
B. Assembly Flow Chart
C. Preconditioning - Attributes Data Sheet
- Pre and Post Burn-In Read and Record
Data
D. Group A
- Attributes Data Sheet
E. Group B
- Attributes Data Sheet
- Pre and Post Read and Record Data for
Intermittent Operating Life (Subgroup B3)
- Bond Strength Data (Subgroup B3)
- Pre and Post High Temperature Operating
Life Read and Record Data (Subgroup B6)
F. Group C
- Attributes Data Sheet
- Pre and Post Read and Record Data for
Intermittent Operating Life (Subgroup C6)
- Bond Strength Data (Subgroup C6)
G. Group D
- Attributes Data Sheet
- Pre and Post RAD Read and Record Data
F. Group A
G. Group B
- Attributes Data Sheet
H. Group C
- Attributes Data Sheet
I. Group D
- Attributes Data Sheet
2. RAD HARD MAX. “S” EQUIVALENT - OPTIONAL
DATA PACKAGE
A. Certificate of Compliance
B. Serialization Records
C. Assembly Flow Chart
D. SEM Photos and Report
E. Preconditioning - Attributes Data Sheet
- HTRB - Hi Temp Gate Stress Post
Reverse Bias Data and Delta Data
- HTRB - Hi Temp Drain Stress Post
Reverse Bias Delta Data
- X-Ray and X-Ray Report
F. Group A
- Attributes Data Sheet
- Subgroups A2, A3, A4, A5 and A7 Data
G. Group B
- Attributes Data Sheet
- Subgroups B1, B3, B4, B5 and B6 Data
H. Group C
- Attributes Data Sheet
- Subgroups C1, C2, C3 and C6 Data
I. Group D
©2001 Fairchild Semiconductor Corporation
- Attributes Data Sheet
- Attributes Data Sheet
- Pre and Post Radiation Data
FSGYC063R Rev. B