Transmissive Photosensors (Photo Interrupters) CNA1311K Photo Interrupter For contactless SW, object detection A side (1.5) With gate A Side or B Side (1.8) Overview CNA1311K is an ultraminiature, highly reliable transmissive photosensor in which a high efficiency GaAs infrared light emitting diode chip and a high sensitivity Si phototransistor chip are integrated in a double molded resin package. Unit : mm (0.15) B side 4.0 1.0 1.5 Optical center 2.6 (C0.5) 1.5 Slit width (0.15) Ultraminiature : 2.6 × 4.0 mm (height : 3.3 mm) A' *3.0 1.5 *2.0 1 3 2 4 ,,, 2-0.4 (0.45) 2-0.2+0.2 –0.1 Not soldered 1.0 max. Features (0.9) 5.0 min. 3.3 2.3 A 2-0.5 SEC. A-A' 1 3 Highly precise position detection : 0.05 mm 2 4 Pin connection 1: Anode 3: Collecter 2: Cathode 4: Emitter (Note) 1. Tolerance unless otherwise specified is ±0.2 2. ( ) Dimension is reference 3. * is dimension at the root of leads Gap width : 1.0 mm Absolute Maximum Ratings (Ta = 25˚C) Parameter Symbol Ratings VR 6 V IF 50 mA PD*1 75 mW IC 20 mA Output (Photo Collector to emitter voltage VCEO transistor) Emitter to collector voltage VECO 35 V 6 V *2 75 mW Collector current Temperature Collector power dissipation PC Operating ambient temperature Topr –25 to +85 Storage temperature Tstg –40 to +100 Tsol*3 260 Soldering temperature *1 Input power derating ratio is 1.0mW/˚C at Ta ≥ 25˚C. *2 Output power derating ratio is 1.0mW/˚C at Ta ≥ 25˚C. *3 Soldering time is within 5 seconds. , ,,, ,,, Reverse voltage (DC) Input (Light Forward current (DC) emitting diode) Power dissipation Unit ˚C more than 1mm ˚C ˚C Soldering bath Electrical Characteristics (Ta = 25˚C) Parameter Symbol Conditions typ max 1.2 1.4 V VR = 3V 10 µA VCE = 20V 100 nA 600 µA 0.4 V Forward voltage (DC) Input characteristics Reverse current (DC) VF IF = 20mA IR Output characteristics Collector cutoff current ICEO Collector current IC VCE = 5V, IF = 5mA Transfer Collector to emitter saturation voltage V IF = 10mA, IC = 40µA CE(sat) characteristics * Response time tr , tf VCC = 5V, IC = 0.1mA, RL = 1000Ω * min 50 50 Unit µs Switching time measurement circuit Sig.IN VCC (Input pulse) Sig.OUT (Output pulse) RL ,, ,, 50Ω 90% 10% td tr tf td : Delay time tr : Rise time (Time required for the collector current to increase from 10% to 90% of its final value) tf : Fall time (Time required for the collector current to decrease from 90% to 10% of its initial value) 1 CNA1311K Transmissive Photosensors (Photo Interrupters) IF , IC — Ta IF — VF IC — IF 60 5 VCE = 5V Ta = 25˚C Ta = 25˚C IF 30 IC 20 10 40 Collector current 40 IC (mA) 50 IF (mA) 50 Forward current Forward current, collector current IF , IC (mA) 60 30 20 0 20 40 60 80 0 100 3 2 1 10 0 – 25 4 0 Ambient temperature Ta (˚C ) 0.4 0.8 1.2 1.6 2.0 0 2.4 0 Forward voltage VF (V) VF — Ta 5 10 IC — VCE 1.6 15 20 IC — Ta 3 120 Ta = 25˚C VCE = 5V IF = 5mA 0.4 IC (%) IF = 20mA 1 15mA 10mA 0 – 40 – 20 0 20 40 60 80 0 100 Ambient temperature Ta (˚C ) 100 80 2 Relative output current 1mA 0.8 IC (mA) 10mA Collector current Forward voltage VF (V) IF = 50mA 1.2 5mA 2mA 0 1 2 3 4 5 60 40 20 0 – 40 – 20 6 Collector to emitter voltage VCE (V) ICEO — Ta 0 20 40 60 80 100 Ambient temperature Ta (˚C ) tr — IC tf — IC 10 3 1 25 Forward current IF (mA) 10 3 VCC = 5V VCE = 20V VCC = 5V 1kΩ 10 1 100Ω Sig.IN VCC 0 20 40 60 80 Ambient temperature Ta (˚C ) 2 100 tr , ,, 10 –5 – 40 – 20 Sig. OUT RL 10 –1 10 –2 10 –1 td 90% 10% tf 1 Collector current IC (mA) 10 100Ω 10 1 10 –4 Sig. OUT 50Ω RL = 2kΩ 1kΩ Sig.IN Sig. OUT 50Ω VCC Sig. OUT RL ,, 10 –3 RL = 2kΩ Fall time 10 –2 tf (µs) 10 2 tr (µs) 10 2 Rise time Dark current ICEO (µA) 10 –1 10 –1 10 –2 10 –1 tr td 90% 10% tf 1 Collector current IC (mA) 10 Transmissive Photosensors (Photo Interrupters) IC — d IC — d 100 100 Criterion 0 d 60 40 20 0 0.4 0.8 1.2 Distance d (mm) 1.6 2.0 80 Criterion 0 ,, , 80 VCE = 5V Ta = 25˚C IF = 5mA Relative output current IC (%) ,,, Relative output current IC (%) VCE = 5V Ta = 25˚C IF = 5mA 0 CNA1311K d 60 40 20 0 0 0.4 0.8 1.2 1.6 2.0 Distance d (mm) 3