PANASONIC CNZ2253

Reflective Photosensors (Photo Reflectors)
CNZ2253
Reflective Photosensor
Mark for indicating
LED side
7.5±0.2
(3.2)
4.0±0.2
CNZ2253 is a photosensor detecting the change of reflective light
in which a high efficiency GaAs infrared light emitting diode is used
as the light emitting element, and a high sensitivity Si Darlington
phototransistor is used as the light detecting element. The two
elements are located parallel in the same direction and objects are
detected when passing in front of the device.
10.2 min. 6.0±0.2
1.7±0.2
Small size and light weight
Applications
ø2.2±0.2
(7.2)
Detection of paper, film and cloth
Optical mark reading
Detection of position and edge
Detection of coin and bill
2
1
Absolute Maximum Ratings (Ta = 25˚C)
Parameter
Symbol Ratings
Reverse voltage (DC)
Input (Light
Forward current (DC)
emitting diode)
Power dissipation
3
3
V
IF
50
mA
PD*1
75
mW
Collector to emitter voltage
VCEO
20
V
Output (Photo Emitter to collector voltage
transistor)
Collector current
VECO
5
V
IC
30
mA
Collector power dissipation
PC*2
100
mW
Operating ambient temperature
Topr
–25 to +85
˚C
Storage temperature
Tstg –30 to +100
˚C
4
(Note)
1
2 3
4
1. ( ) Dimension is reference
Pin connection
2. * is dimension at the root of leads
Unit
VR
ø0.45±0.05
ø0.3±0.05
*2-0.9±0.15
,
,,
Start, end mark detection of magnetic tape
Temperature
0.5
10.6±0.3
9.6±0.3
Features
High sensitivity
Unit : mm
3.0±0.2
Overview
*1
Input power derating ratio is
1.0 mW/˚C at Ta ≥ 25˚C.
*2 Output power derating ratio is
1.34 mW/˚C at Ta ≥ 25˚C.
Electrical Characteristics (Ta = 25˚C)
Parameter
Symbol
Forward voltage (DC)
Input
Reverse current (DC)
characteristics
Capacitance between terminals
Output characteristics Collector cutoff current
Conditions
VF
IF = 50mA
IR
VR = 3V
Ct
VR = 0V, f = 1MHz
ICEO
C
classifications
*1
Class
Q
R
S
IC (mA)
3 to 9
6 to 18
12 to 30
*4
Unit
1.5
V
10
µA
pF
Time required for the collector current to increase
from 10% to 90% of its final value.
Time required for the collector current to decrease
from 90% to 10% of its initial value.
tr
3
0.5
µA
30
mA
µs
150
1.5
V
Transfer characteristics measurement circuit
(Ambient light is shut off completely)
IC
VCC
,,,,
,,,,,
,,
,,,
,
IF
*3
max
1.2
VCE = 10V
Transfer
tr*3 , tf*4 VCC = 10V, IC = 1mA, RL = 100Ω
characteristics Response time
Collector to emitter saturation voltage VCE(sat) IF = 50mA, IC = 1mA
*1 I
typ
50
IC*1*2 VCC = 5V, IF = 10mA, RL = 100Ω
Collector current
min
d = 3 mm
RL
90%
10%
tf
Standard white paper
(Reflective ratio 90%)
1
CNZ2253
Reflective Photosensors (Photo Reflectors)
IF , IC — Ta
IF — VF
1.6
Ta = 25˚C
IF
IC
30
20
10
40
Forward voltage
40
VF (V)
50
IF (mA)
50
30
20
60
80
0
100
0
1.6
2.0
0
– 40 – 20
2.4
0
10
1
10 2
60
80
100
IC — Ta
10 2
IF = 20mA
10
10mA
1
1
120
80
40
0
– 40 – 20
10 2
10
VCC = 5V
IF = 10mA
RL = 100Ω
Collector to emitter voltage VCE (V)
0
tr — IC
40
60
80
100
IC — d
10 4
16
VCC = 10V
Ta = 25˚C
VCE = 10V
10 2
10 3
RL = 1kΩ
tr (µs)
Rise time
20
Ambient temperature Ta (˚C )
500Ω
100Ω
10 2
10
VCC = 5V
Ta = 25˚C
RL = 100Ω
IF = 1.5mA
12
,
,
ICEO — Ta
1
40
160
10 –1
10 –1
10 3
10
20
Ambient temperature Ta (˚C )
IC (%)
IC (mA)
10 2
Collector current
IC (mA)
1.2
Ta = 25˚C
10 3
ICEO (µA)
0.4
IC — VCE
VCC = 5V
Ta = 25˚C
RL = 100Ω
10
0.8
10 3
Forward current IF (mA)
Dark current
10mA
0.8
Forward voltage VF (V)
IC — IF
10 3
1
0.4
Relative output current
40
IC (mA)
20
Collector current
0
Ambient temperature Ta (˚C )
10 –1
IF = 50mA
1.2
10
0
– 25
Collector current
VF — Ta
60
Forward current
Forward current, collector current
IF , IC (mA)
60
d
8
4
10 –1
10 –2
– 40 – 20
0
20
40
60
80
Ambient temperature Ta (˚C )
2
100
1
10 –2
10 –1
1
Collector current IC (mA)
10
0
0
2
4
6
Distance d (mm)
8