PIN Photodiodes PNZ331CL Unit : mm 1. 0± 0. 1 For optical fiber communication systems 1 0. 0± 1. ø5.4±0.1 ø4.2±0.05 PIN Photodiode 3.25±0.3 Features TO-18 standard type package 14.2±0.5 2.25±0.1 (0.2) High coupling capability suitable for plastic fiber High quantum efficiency 3-ø0.45±0.04 45± 3˚ ø2.54±0.25 High-speed response 2 3 1 1: Anode 2: Case 3: Cathode Absolute Maximum Ratings (Ta = 25˚C) Parameter Symbol Ratings Unit Reverse voltage (DC) VR 30 V Power dissipation PD 50 mW Operating ambient temperature Topr –25 to +85 ˚C Storage temperature Tstg –30 to +100 ˚C Dimensions of detection area Unit : mm 1.1 0.88 Active region A1 ø0.1 Electro-Optical Characteristics (Ta = 25˚C) Parameter Symbol Conditions Dark current ID VR = 10V Photo current IL VR = 10V, L = 1000 lx*1 λP VR = 10V Peak sensitivity wavelength tr, tf*2 Response time min 7 VR = 10V, RL = 50Ω Capacitance between pins Ct VR = 10V Photodetection sensitivity R VR = 10V, λ = 800nm Acceptance half angle θ Photodetection surface shape D typ max 0.1 10 Unit nA 14 µA 900 nm 2 ns 3 pF 0.55 A/W Measured from the optical axis to the half power point 70 deg. Effective detection area 0.88 mm Note 1) Spectral sensitivity: Sensitivity at wavelengths exceeding 400 nm as a percentage of maximum sensitivity is 100% Note 2) This product is not designed to withstand electromagnetic radiation or heavy-charge particles. Note 3) Difficult to guarantee compliance with moisture resistance standard (MIL-STD-202D) *1 *2 Measurements were made using a tungsten lamp (color temperature T = 2856K) as a light source. Switching time measurement circuit (see figure below) Sig.IN VR = 10V (Input pulse) λP = 800nm Sig.OUT ,,,, ,,,, (Output pulse) 50Ω 90% 10% RL td tr tf td : Delay time tr : Rise time (Time required for the collector photo current to increase from 10% to 90% of its final value) tf : Fall time (Time required for the collector photo current to decrease from 90% to 10% of its initial value) 1 PIN Photodiodes PNZ331CL PD — Ta IL — L 10 2 60 VR = 10V Ta = 25˚C T = 2856K 30 20 VR = 10V Ta = 25˚C λ = 800nm IL (µA) 10 Photo current IL (µA) Photo current Power dissipation PD (mW) 50 40 IL — P 10 2 1 10 –1 10 1 10 –1 10 0 – 25 0 20 40 60 80 10 –2 10 100 10 2 Ambient temperature Ta (˚C ) 10 3 Illuminance L (lx) Ta = 25˚C VR = 10V λ = 800nm R (%) 10 Photodetection sensitivity ID (nA) Dark current Dark current ID (nA) 10 2 1 10 –1 10 –2 24 10 –3 – 40 – 20 32 Reverse voltage VR (V) 80 40 20 40 60 80 Ambient temperature Ta (˚C ) 2 R (%) 100 Relative photodetection sensitivity IL (%) Relative photo current 120 0 40 60 80 80 40 0 – 40 – 20 100 100 0 20 40 60 80 100 Ambient temperature Ta (˚C ) Frequency characteristics Spectral sensitivity characteristics VR = 10V L = 1000 lx T = 2856K 0 – 40 – 20 20 120 Ambient temperature Ta (˚C ) IL — Ta 160 0 6 VR = 10V Ta = 25˚C 4 P (dB) 16 80 Relative power output 8 10 4 160 VR = 10V 10 –1 10 3 R — Ta 10 3 0 10 2 Incident photo power P (µW) ID — Ta ID — VR 1 10 –2 10 –2 10 10 4 60 40 20 2 0 –2 –4 –6 –8 0 200 400 600 800 1000 Wavelength λ (nm) 1200 – 10 1 10 10 2 Frequency f (MHz) 10 3 PNZ331CL PIN Photodiodes Coupling loss characteristics Ct — V R f = 1MHz Ta = 25˚C 0 10 –1 1 1 Z = 0.3mm 2 3 X 1 10 VR (V) 10 2 Fiber Y 4 5 – 0.8 – 0.4 0 0.4 2 3 Fiber Y 4 Z ø1mm Distance X, Y (mm) Coupling loss LZ (dB) 1 Reverse voltage X,Y = 0mm Z = 0mm 10 10 –2 10 –1 LZ — Z 0 Coupling loss LX , LY (dB) Capacitance between pins Ct (pF) 10 2 Coupling loss characteristics LX , LY — X, Y Z ø1mm X 0.8 5 0 0.4 0.8 1.2 1.6 Distance Z (mm) 3